TEC8012 TOSHIBA | Alldatasheet
Document overview
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Technical content
SILICONPNPEPITAXIALTYPE(PCTPROCESS)TEC8012 DRIVERSTAGEAMPLIFIERAPPLICATIONS. =-lV,IC=-400mA UnitinmmSWITCHINGAPPLICATIONS.51MAX. : -\\
FEATURES
.ExcellenthFELinearity:hFE(2)=23(Min.)atVCE 00M1 CL451itS r-i .1WattAmplifierApplicationj,| Q55MAX.30C5.ComplementarytoTEC8013Q45' MAXIMUMRATINGS(Ta=25°C) CHARACTERISTICSYMBOLRATINGUNIT1.27, x,1.27inc5Collector-BaseVoltageVCBO-40V (\\n\\-^>Collector-EmitterVoltageVCEO-30V Impipipl jg\\123/,-, -897-
IC—VCE iFEic-7COMMONEMITTER-8^/,-6-5Ta-25r-4-3-2Ig=—1mAr- C-1-2-3-4-5-6-7COLLECTOR-EMITTERVOLTAJEVCE(V)VCE(sat)-IC uoa<oou> -as-a3-ai-0.05-Q03-aoi IC/IB=10 Ta=100*C, 2>-5_J25 11-0.5-1-3-10-30-100-300COLLECTORCURRENTIc(mA) 5003001005030 Hi=100*0 F\\\\«-25^J5L COMMONEMITTERVCE=-6VVce-IV-4- | _,LU :3o-5S)-3 -1-3-10-30-100-300COLLECTORCURRENTIP(mA IB-VBE -1000 COMMONEM]TTERVGE=-6V—3i«jH")T1 ki040.81.2BASE-EMITTERVOLTAGEVr(V)PC-T* 400 255075100125150AMBIENTTEMPERATURETa(°C) 898-