TEA2025B TGS | Alldatasheet
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SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn CHMC STEREO AUDIO AMPLIFIER TEA2025 DESCRIPTION Outline Drawing Unit:m m The D2025 is a m onolithic int egrated audi o amplifier in a 16-pin plasti c dual i n line pac kage. It is designe d for porta ble cassette play ers and radios. FEA TURE z Working Voltage down to 3V z Few External com ponents z High Channel isolation z Voltage gain up to 45dB(Adjustable with external resistor) z Soft clipping z Internal Therm al protection BLOCK DIAGRAM P IN CONNECTION Bridge Out-2 Boot-2 GND GND Feedback-2 IN-2(+) SVR GND(Sub) IN-1(+) FeedBack-1 GND GND Boot-1 Out-1 Vcc TEA2025 THERMAL PROTECT START CIRCUIT DECOUPLING 10K 10K 23456 9 10 11 12 13 14 15 TIGER ELECTRONIC CO.,LTD
SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn CHMC ABSOLUTE MAXIMUM RATINGS (Ta=25 °C) Characteristic Symbol Value Unit Supply V oltage Vcc 16.5 V Output Peak Current Io 1.5 A Iunction Temperature Tj 150 °C Storage Temperature Tstg -40~150 °C
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified: Ta=25° C, Vcc=9V; Dual Mode) Characteristics Test conditions Symbol Min. Typ. Max. Unit Supply V oltage Vcc 3 12 V Quiescent Current IQ 40 50 mA Quiescent Output Current V o 4.5 V Dual Mode 43 45 47 V oltage Gain BTL Mode Gv 49 51 53 dB V oltage Gain Difference ∆Gv ±1 dB Input Impedance Ri 30 kΩ RL =4 Ω 1.7 2.3 Vcc=9V RL =8 Ω 1.3 RL =4 Ω 0.7 1 Vcc=6V RL =8 Ω 0.6 Dual Mode per channel Vcc=3V; R L =4 Ω 0.1 Vcc=9V; R L =8 Ω 4.7 Output Power (f=1kHz; d=10%) BTL Mode Vcc=6V; R L =4 Ω Po 2.8 W Dual Mode 0.3 1.5 Distortion Vcc=9V; R L =4 Ω f=1kHz; Po=250mW BTL Mode d 0.5 Supply V oltage Rejection RG =0; Vripple=150mVrms Av=45dB; fripple=100Hz SVR 40 46 dB RG =0 1.5 3 Input Noise V oltage Av=200 Bandwidth 20Hz to 20kHz RG =10kΩ Vn 3 6 µV Cross-Talk RG =10kΩ ; f=1kHz; RL =4 Ω; Po=1W C.T. 40 55 dB
SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn CHMC THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Junction-case therm al resistance Rth(j-c) 15 °C/W Junction-am bient therm al resi stance(see Note) Rth(j-a) 60 °C/W Note : The Rth(j-a) is measured on de vic es bon ded on a 10 ×5×0. 15 cm glass-epoxy substrate with a 35 µm thick copper surface of 5cm 2 TEST CIRCUIT 1. Dual Mode Circuit 2. BTL Mode Circuit
SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn CHMC CHARACTERISTICS CUR VES