TEA2025B STMICROELECTRONICS | Alldatasheet

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DUAL OR BRIDGE CONNECTION MODES FEW EXTERNAL COMPONENTS SUPPLY VOLTAGE DOWN TO 3V HIGH CHANNEL SEPARATION VERY LOW SWITCH ON/OFF NOISE MAX GAIN OF 45dB WITH ADJUST EXTER- NAL RESISTOR SOFT CLIPPING THERMAL PROTECTION 3V < V CC < 15V P=2 •1W, VCC = 6V, RL =4 Ω P=2 •2.3W, VCC = 9V, RL =4 Ω P=2 •0.1W, VCC = 3V, RL =4 Ω

DESCRIPTION

The TEA2025B/Dis a monolithic integrated circuit in 12+2+2 Powerdip and 12+4+4 SO, intended for use as dual or bridge power audio amplifier port- able radio cassette players. June 1994 Symbol Parameter Test Conditions Unit VS Supply Voltage 15 V IO Ouput Peak Current 1.5 A TJ Junction Temperature 150 °C Tstg Storage Temperature 150 °C ABSOLUTE MAXIMUM RATINGS DECOUPLING THERMAL PROTECT. START CIRCUIT 10KΩ 10KΩ 50Ω 50Ω 5KΩ 50Ω SVR IN 2+ FEED GND GND BOOT 2 OUT 2 BRIDGE VS+ OUT 1BOOT 1GNDGNDFEEDIN 1+GND(Sub) D94AU120 BLOCK DIAGRAM POWERDIP 12+2+2 SO20 (12+4+4) ORDERING NUMBERS: TEA2025B (PDIP) TEA2025D (SO)

OUT.2 BOOT.2 GND GND FEEDBACK IN.2 (+) SVR +Vs OUT.1 BOOT.1 GND GND FEEDBACK IN.1 (+) GND (sub.) POWERDIP 12+2+2 PIN CONNECTION (Top view) BRIDGE OUT 2 BOOT 2 GND GND GND GND FEEDBACK IN 2(+)

9 IN 1(+)

V CC20 D94AU119 SVR 10 GND(Sub) 11 SO 12+4+4 PIN CONNECTION (Top view) Symbol Description SO 12+4+4 (*) PDIP 12+2+2 (**) Unit R th j-case R th j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max °C/W °C/W (*) The Rth j-ambis measured with 4sq cm copper area heatsink (**) The Rth j-ambis measured on devices bonded on a 10 x 5 x 0.15cm glass-epoxy substrate with a 35µm thick copper surface of 5 cm2. THERMAL DATA TEA2025B - TEA2025D

ELECTRICAL CHARACTERISTICS (Tamb =2 5°C, VCC = 9V, Stereo unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit VS Supply Voltage 3 12 V IQ Quiescent Current 35 50 mA VO Quiescent Output Voltage 4.5 V AV Voltage Gain Stereo Bridge 53 dB Δ AV Voltage Gain Difference ±1d B R j Input Impedance 30 K Ω PO Output Power (d = 10%) Stereo 8 (per channel) 9V 12V 16Ω 32Ω 32Ω 1.7 0.7 2.3 1.3 0.6 0.25 0.13 0.1 0.02 2.4 W Bridge 16Ω 32Ω 4.7 2.8 1.5 0.18 0.06 W d Distortion Vs = 9V; R L =4 Ω Stereo Bridge 0.3 0.5 1.5 % SVR Supply Voltage Rejection f = 100Hz, VR = 0.5V, Rg =0 40 46 dB EN (IN) Input Noise Voltage R G =0 R G =1 04Ω 1.5 6 mV CT Cross-Talk f = 1KHz, R g = 10KΩ 40 52 dB Term. N° (PDIP) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Figure 1:Bridge Application (Powerdip) Figure 2:Stereo Application (Powerdip) C11 C10 TEA2025B - TEA2025D

A good layout is recommended in order to avoid oscillations. Generally the designer must pay attention on the following points: - Short wires of components and short connec- tions. - No ground loops. - Bypass of supply voltage with capacitors as nearest as possible to the supply I.C.pin.The low value(poliester)capacitors must have good temperature and frequency charac- teristics. - No sockets. 2) the heatsink can have a smaller factor of safety compared with that of a conventional circuit. There is no device damage in the case of ex- cessive junction temperature: all that happens is that P O (and therefore Ptot) and Id are re- duced. APPLICATION SUGGESTION The recommended values of the components are those shown on stereo application circuit of Fig. 2 different values can be used, the follow- ing table can help the designer. COMPONENT RECOMMENDED VALUE PURPOSE LARGER THAN SMALLER THAN C1,C2 0.22 µF INPUT DC DECOUPLING IN CASE OF SLIDER CONTACT NOISE OF VARIABLE RESISTOR C3 100 µF RIPPLE REJECTON DEGRADATION OF SVR, INCREASE OF THD AT LOW FREQUENCY AND LOW VOLTAGE C4,C5 100 µF BOOTSTRAP C6,C7 470 µF OUTPUT DC DECOUPLING INCREASE OF LOW FREQUENCY CUT- OFF C8,C9 0.15 µF FREQUENCY STABILITY DANGER OF OSCILLATIONS C10, C11 100 µF INVERTING INPUT DC DECOUPLING INCREASE OF LOW FREQUENCY CUT- OFF TEA2025B - TEA2025D

SO20 PACKAGE MECHANICAL DATA DIM. mm inch A 2.65 0.104 a1 0.1 0.3 0.004 0.012 a2 2.45 0.096 b 0.35 0.49 0.014 0.019 b1 0.23 0.32 0.009 0.013 C 0.5 0.020 c1 45 (typ.) D 12.6 13.0 0.496 0.512 E 10 10.65 0.394 0.419 e 1.27 0.050 e3 11.43 0.450 F 7.4 7.6 0.291 0.299 L 0.5 1.27 0.020 0.050 M 0.75 0.030 S 8 (max.) TEA2025B - TEA2025D

DIP16 PACKAGE MECHANICAL DATA DIM. mm inch a1 0.51 0.020 B 0.85 1.40 0.033 0.055 b 0.50 0.020 b1 0.38 0.50 0.015 0.020 D 20.0 0.787 E 8.80 0.346 e 2.54 0.100 e3 17.78 0.700 F 7.10 0.280 I 5.10 0.201 L 3.30 0.130 Z 1.27 0.050 TEA2025B - TEA2025D

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications men- tioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without ex- press written approval of SGS-THOMSON Microelectronics.  1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A. TEA2025B - TEA2025D