TEA1112

TEA1112 PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of 1996 Feb 16 File under Integrated Circuits, IC03

1997 Mar 26

TEA1112; TEA1112A Low voltage versatile telephone transmission circuits with dialler interface

1997 Mar 26 2

Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interfaceTEA1112; TEA1112A

FEATURES

• Low DC line voltage; operates down to 1.6 V (excluding polarity guard)
• Voltage regulator with adjustable DC voltage
• Provides a supply for external circuits
• Symmetrical high impedance inputs (64 kΩ ) for dynamic, magnetic or piezo-electric microphones
• Asymmetrical high impedance input (32 kΩ ) for electret microphones
• DTMF input with confidence tone
• Mute input for pulse or DTMF dialling (MUTE for TEA1112 and MUTE for TEA1112A)
• Receiving amplifier for dynamic, magnetic or piezo-electric earpieces
• AGC line loss compensation for microphone and earpiece amplifiers
• LED on-hook/off-hook status indication
• Microphone mute function (MMUTE for TEA1112 and MMUTE for TEA1112A). APPLICATION
• Line powered telephone sets, cordless telephones, fax machines and answering machines. GENERAL DESCRIPTION The TEA1112; TEA1112A are bipolar integrated circuits that perform all speech and line interface functions required in fully electronic telephone sets. They perform electronic switching between speech and dialling. The ICs operate at a line voltage down to 1.6 V DC (with reduced performance) to facilitate the use of telephone sets connected in parallel. A current (proportional to the line current and internally limited to a typical value of 19.5 mA) is available to drive an LED which indicates the on-hook/off-hook status. The microphone amplifier can be disabled during speech condition by means of a microphone mute function. All statements and values refer to all versions unless otherwise specified. QUICK REFERENCE DATA I line= 15 mA; VEE =0V ; RSLPE =2 0Ω ; AGC pin connected to VEE ; Zline= 600Ω ; f = 1 kHz; Tamb =2 5°C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Iline line current operating range normal operation 11 − 140 mA with reduced performance 1 − 11 mA ILED(max) maximum supply current available Iline=1 8m A − 0.5 − mA Iline>7 6m A − 19.5 − mA VLN DC line voltage 3.35 3.65 3.95 V ICC internal current consumption V CC = 2.9 V − 1.15 1.4 mA VCC supply voltage for peripherals I p =0m A − 2.9 − V G vtrx typical voltage gain range microphone amplifier V MIC = 2 mV (RMS) 38.8 − 51.8 dB receiving amplifier V IR = 6 mV (RMS) 19.2 − 31.2 dB ΔG vtrx gain control range for microphone and receiving amplifiers with respect to I line=1 5m A Iline=8 5m A − 5.8 − dB ΔG vtxm microphone amplifier gain reduction − 80 − dB

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Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interfaceTEA1112; TEA1112A

ORDERING INFORMATION

TEA1112 DIP16 plastic dual in-line package; 16 leads (300 mil) SOT38-4 TEA1112A DIP16 plastic dual in-line package; 16 leads (300 mil) SOT38-4 TEA1112T SO16 plastic small outline package; 16 leads; body width 3.9 mmSOT109-1 TEA1112AT SO16 plastic small outline package; 16 leads; body width 3.9 mmSOT109-1 Fig.1 Block diagram. handbook, full pagewidth ATT.DTMF V− I MICRO MUTE AGC CIRCUIT CURRENT REFERENCE LOW VOLTAGE CIRCUIT LED DRIVER IR MIC MIC MMUTE or MMUTE VEE ILEDAGC SLPE TEA1112 TEA1112A 231013 15 14 8 GAS GAR QR LN VCC REG MUTE or MUTE V− I V− I V− I MBE793

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Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interfaceTEA1112; TEA1112A PINNING SYMBOL PIN

DESCRIPTION

LN 1 1 positive line terminal SLPE 2 2 slope (DC resistance) adjustment I LED 3 3 available output current to drive a LED REG 4 4 line voltage regulator decoupling GAS 5 5 sending gain adjustment MMUTE 6 − microphone mute input MMUTE − 6 microphone mute input (active LOW) DTMF 7 7 dual-tone multi-frequency input MUTE 8 − mute input to select speech or dialling mode MUTE − 8 mute input to select speech or dialling mode (active LOW) IR 9 9 receiving amplifier input AGC 10 10 automatic gain control/line loss compensation MIC − 11 11 inverting microphone amplifier input MIC+ 12 12 non-inverting microphone amplifier input V EE 13 13 negative line terminal QR 14 14 receiving amplifier output GAR 15 15 receive gain adjustment V CC 16 16 supply voltage for speech circuit and peripherals Fig.2 Pin configuration (TEA1112). handbook, halfpage TEA1112 MBE791 VCC GAR QR VEE MIC + MIC − AGC IR LN SLPE ILED REG GAS MMUTE DTMF MUTE Fig.3 Pin configuration (TEA1112A). handbook, halfpage TEA1112A MBE790 VCC GAR QR VEE MIC + MIC − AGC IR LN SLPE ILED REG GAS MMUTE DTMF MUTE

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Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interfaceTEA1112; TEA1112A FUNCTIONAL DESCRIPTION All data given in this chapter are typical values, except when otherwise specified. Supply (pins LN, SLPE, VCC and REG) The supply for the TEA1112; TEA1112A and their peripherals is obtained from the telephone line. The ICs generate a stabilized reference voltage (Vref) between pins LN and SLPE. This reference voltage is equal to 3.35 V, is temperature compensated and can be adjusted by means of an external resistor (R VA ). It can be increased by connecting the RVA resistor between pins REG and SLPE (see Fig.5), or decreased by connecting the R VA resistor between pins REG and LN. The voltage at pin REG is used by the internal regulator to generate the stabilized reference voltage and is decoupled by a capacitor (C REG ) which is connected to VEE . This capacitor, converted into an equivalent inductance (see Section “Set impedance”), realizes the set impedance conversion from its DC value (R SLPE ) to its AC value (RCC in the audio-frequency range). The voltage at pin SLPE is proportional to the line current. Figure 4 illustrates the supply configuration. The ICs regulate the line voltage at pin LN, and can be calculated as follows: V LN V ref R SLPE ISLPE×+= ISLPE Iline ICC– Ip– I∗– ILED I+ sh== Where: Iline= line current ICC = current consumption of the IC Ip = supply current for peripheral circuits I* = current consumed between LN and VEE ILED = supply current for the LED component Ish = the excess line current shunted to SLPE (and VEE ) via LN. The preferred value for RSLPE is 20Ω . Changing RSLPE will affect more than the DC characteristics; it also influences the microphone and DTMF gains, the LED supply current characteristic, the gain control characteristics, the sidetone level and the maximum output swing on the line. The internal circuitry of the TEA1112; TEA1112A is supplied from pin V CC . This voltage supply is derived from the line voltage by means of a resistor (RCC ) and must be decoupled by a capacitor CVCC . It may also be used to supply peripheral circuits such as dialling or control circuits. The V CC voltage depends on the current consumed by the IC and the peripheral circuits as shown by the formula (see also Figs.6 and 7). R CCint is the internal impedance of the voltage supply point, and Irec is the current consumed by the output stage of the earpiece amplifier. V CC V CC0 R CCint Ip Irec–()×–= V CC0 V LN R CC ICC×–= Fig.4 Supply configuration. handbook, full pagewidth LED DRIVER Ish R p R d ISLPE REG LN R GASint from pre amp SLPE 45.5 kΩ 15.5 kΩ VEE Vd VCC R CC C VCCICC C REGR SLPE Vexch R exch ILED ILED Iline R line TEA1112 TEA1112A IP peripheral circuits 100 µF 4.7 µF20 Ω 69 kΩ 619 Ω MBE789

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Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interfaceTEA1112; TEA1112A The DC line current flowing into the set is determined by the exchange supply voltage (Vexch), the feeding bridge resistance (Rexch), the DC resistance of the telephone line (Rline) and the reference voltage (Vref). With line currents below 7.5 mA, the internal reference voltage (generating V ref) is automatically adjusted to a lower value. This means that more sets can operate in parallel with DC line voltages (excluding the polarity guard) down to an absolute minimum voltage of 1.6 V. At currents below 7.5 mA, the circuit has limited sending and receiving levels. This is called the low voltage area. Set impedance In the audio frequency range, the dynamic impedance is mainly determined by the R CC resistor. The equivalent impedance of the circuits is illustrated in Fig.8. LED supply (pin ILED ) The TEA1112; TEA1112A give an on-hook/off-hook status indication. This is achieved by a current made available to drive an LED connected between pins I LED and LN. In the low voltage area, which corresponds to low line current conditions, no current is available for this LED. Fig.5 Reference voltage adjustment by RVA . (1) Influence of RVA on Vref. (2) Vref without influence of RVA . handbook, halfpage6.0 Vref (V) 3.0 4.0 (1) (2) 5.0 R VA (Ω ) MGD176 105104 106 107 For line currents higher than a threshold, ILEDstart, the ILED current increases proportionally to the line current (with a ratio of one third). The ILED current is internally limited to 19.5 mA (see Fig.9). If no LED device is used in the application, the I LED pin should be shorted to pin SLPE. For 17 mA < Iline< 77 mA: This LED driver is referenced to SLPE. Consequently, all the ILED supply current will flow through the RSLPE resistor. The AGC characteristics are not disturbed (see Fig.4). Microphone amplifier (pins MIC+, MIC− and GAS) The TEA1112; TEA1112A have symmetrical microphone inputs. The input impedance between pins MIC+ and MIC − is 64 kΩ (2× 32 kΩ ). The voltage gain from pins MIC+/MIC− to pin LN is set at 51.8 dB (typ). The gain can be decreased by connecting an external resistor R GAS between pins GAS and REG. The adjustment range is 13 dB. A capacitor C GAS connected between pins GAS and REG can be used to provide a first-order low-pass filter. The cut-off frequency corresponds to the time constant C GAS × (RGASint // RGAS ). RGASint is the internal resistor which sets the gain with a typical value of 69 kΩ . Automatic gain control is provided on this amplifier for line loss compensation. Microphone mute (pin MMUTE; TEA1112) The microphone amplifier can be disabled by activating the microphone mute function. When MMUTE is LOW, the normal speech mode is entered, depending on the level on MUTE (see Table 1). When MMUTE is HIGH, the microphone amplifier inputs are disabled while the DTMF input is enabled (no confidence tone is provided). The voltage gain between LN and MIC+/MIC− is attenuated; the gain reduction is 80 dB (typ). Microphone mute (pin MMUTE; TEA1112A) The microphone amplifier can be disabled by activating the microphone mute function. WhenMMUTE is LOW, the microphone amplifier inputs are disabled while the DTMF input is enabled (no confidence tone is provided). The voltage gain between LN and MIC+/MIC− is attenuated; the gain reduction is 80 dB (typ). When MMUTE is HIGH, the normal speech mode is entered, depending on the level on MUTE (see Table 1). I LED Iline 17–

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Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interfaceTEA1112; TEA1112A Receiving amplifier (pins IR, GAR and QR) The receiving amplifier has one input (IR) and one output (QR). The input impedance between pin IR and pin VEE is 20 kΩ . The voltage gain from pin IR to pin QR is set at 31.2 dB (typ). The gain can be decreased by connecting an external resistor R GAR between pins GAR and QR; the adjustment range is 12 dB. Two external capacitors CGAR (connected between GAR and QR) and CGARS (connected between GAR and VEE ) ensure stability. The CGAR capacitor provides a first-order low-pass filter. The cut-off frequency corresponds to the time constant C GAR × (RGARint // RGAR ). RGARint is the internal resistor which sets the gain with a typical value of 100 kΩ . The relationship CGARS =1 0× C GAR must be fulfilled to ensure stability. The output voltage of the receiving amplifier is specified for continuous wave drive. The maximum output swing depends on the DC line voltage, the R CC resistor, the ICC current consumption of the circuit, the Ip current consumption of the peripheral circuits and the load impedance. Automatic gain control is provided on this amplifier for line loss compensation. Automatic gain control (pin AGC) The TEA1112; TEA1112A perform automatic line loss compensation. The automatic gain control varies the gain of the microphone amplifier and the gain of the receiving amplifier in accordance with the DC line current. The control range is 5.8 dB (which corresponds approximately to a line length of 5 km for a 0.5 mm diameter twisted-pair copper cable with a DC resistance of 176 Ω /km and an average attenuation of 1.2 dB/km). The ICs can be used with different configurations of feeding bridge (supply voltage and bridge resistance) by connecting an external resistor R AGC between pins AGC and VEE . This resistor enables the Istart and Istop line currents to be increased (the ratio between Istart and Istop is not affected by the resistor). The AGC function is disabled when pin AGC is left open-circuit. Mute function (pin MUTE; TEA1112) The mute function performs the switching action between the speech mode and the dialling mode. When MUTE is LOW or open-circuit, the microphone and receiving amplifiers inputs are enabled while the DTMF input is disabled, depending on the MMUTE level (see Table 1). When MUTE is HIGH, the DTMF input is enabled and the microphone and receiving amplifiers inputs are disabled. Mute function (pin MUTE; TEA1112A) The mute function performs the switching between the speech mode and the dialling mode. WhenMUTE is LOW or open-circuit, the DTMF input is enabled and the microphone and receiving amplifiers inputs are disabled. When MUTE is HIGH, the microphone and receiving amplifiers inputs are enabled while the DTMF input is disabled, depending on the MMUTE level (see Table 1). DTMF amplifier (pin DTMF) When the DTMF amplifier is enabled, dialling tones may be sent on line. These tones can be heard in the earpiece at a low level (confidence tone). The TEA1112; TEA1112A have an asymmetrical DTMF input. The input impedance between DTMF and V EE is 20 kΩ . The voltage gain from pin DTMF to pin LN is 25.5 dB. When an external resistor is connected between pins REG and GAS to decrease the microphone gain, the DTMF gain varies in the same way (the DTMF gain is 26.3 dB lower than the microphone gain with no AGC control). The automatic gain control has no effect on the DTMF amplifier.

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Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interfaceTEA1112; TEA1112A Fig.6 Typical current Ip available from VCC for peripheral circuits at Iline= 15 mA. (1) With RVA resistor. (2) Without RVA resistor. handbook, halfpage2.5 01 2 34 MBE783 0.5 1.5 VCC (V) (1)(2) IP (mA) Fig.7 VCC supply voltage for peripherals. handbook, halfpage PERIPHERAL CIRCUIT IP Irec R CCint VCC VEE VCCO MBE792 Fig.8 Equivalent impedance between LN and VEE . LEQ =C REG × R SLPE × R P. R P = internal resistance. R P = 15.5 kΩ . handbook, halfpage LN VEE SLPE R SLPE C REG REG V CC R CC 4.7 µF 100 µF C VCC 619 Ω 20 Ω R P Vref LEQ MBE788 Fig.9 Available current to drive an LED. handbook, halfpage 0 100 100 MBE784 20 40 60 80 Iline (mA) I (mA) ISLPE ILED Ish

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Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interfaceTEA1112; TEA1112A MUTE and MMUTE levels for different modes Table 1 Required MUTE and MMUTE levels to enable the different possible modes IC TEA1112 TEA1112A Mode MUTE MMUTE MUTE MMUTE Speech L L H H DTMF dialling H X L X Microphone mute L H H L SIDETONE SUPPRESSION The TEA1112; TEA1112A anti-sidetone network comprising RCC // Zline, Rast1, Rast2, Rast3, RSLPE and Zbal (see Fig.10) suppresses the transmitted signal in the earpiece. Maximum compensation is obtained when the following conditions are fulfilled: The scale factor k is chosen to meet the compatibility with a standard capacitor from the E6 or E12 range for Z bal. In practice, Zline varies considerably with the line type and the line length. Therefore, the value chosen for Zbal should R SLPE R ast1× R CC R ast2 R ast3+()×= k R ast2 R ast3 R SLPE+()×() Zbal kZ line×= be for an average line length which gives satisfactory sidetone suppression with short and long lines. The suppression also depends on the accuracy of the match between Z bal and the impedance of the average line. The anti-sidetone network for the TEA1112; TEA1112A (as shown in Fig.14) attenuates the receiving signal from the line by 32 dB before it enters the receiving amplifier. The attenuation is almost constant over the whole audio frequency range. A Wheatstone bridge configuration (see Fig.11) may also be used. More information on the balancing of an anti-sidetone bridge can be obtained in our publication “Applications Handbook for Wired Telecom Systems, IC03b”, order number 9397 750 00811. Fig.10 Equivalent circuit of TEA1112; TEA1112A family anti-sidetone bridge. handbook, full pagewidth MBE787 Im Zir IR R ast1 R ast3 R ast2 SLPE R SLPE VEE Zline R CC LN Zbal

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Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interfaceTEA1112; TEA1112A Fig.11 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration. handbook, full pagewidth MBE786 Im Zir IR Zbal R ast1 SLPE R SLPE VEE Zline R CC LN R A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VLN positive continuous line voltage V EE − 0.4 12 V repetitive line voltage during switch-on or line interruption VEE − 0.4 13.2 V Vn(max) maximum voltage on pins ILED , SLPE V EE − 0.4 V LN + 0.4 V maximum voltage on all other pins V EE − 0.4 V CC + 0.4 V Iline line current R SLPE =2 0Ω ; see Figs 12 and 13 − 140 mA Ptot total power dissipation T amb =7 5°C; see Figs 12 and 13TEA1112; TEA1112A − 625 mW TEA1112T; TEA1112AT − 416 mW Tstg IC storage temperature −40 +125 °C Tamb operating ambient temperature −25 +75 °C SYMBOL PARAMETER VALUE UNIT R th j-a thermal resistance from junction to ambient in free air (TEA1112; TEA1112A) 80 K/W thermal resistance from junction to ambient in free air mounted on epoxy board 40.1× 19.1× 1.5 mm (TEA1112T; TEA1112AT)

130 K/W

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Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interfaceTEA1112; TEA1112A Fig.12 Safe operating area (TEA1112; TEA1112A). handbook, halfpage 150 2468 1 0 MBE782 110 Iline (mA) VLN − VSLPE (V) (1)(2)(3)(4) LINE T amb (°C) P tot (W) (1) 45 1.000 (2) 55 0.875 (3) 65 0.750 (4) 75 0.625 Fig.13 Safe operating area (TEA1112T; TEA1112AT). LINE T amb (°C) P tot (W) (1) 45 0.666 (2) 55 0.583 (3) 65 0.500 (4) 75 0.416 handbook, halfpage 21 2 150 110 MLC202 46 8 1 0 130 ILN (mA) V LN V SLPE (V) (1) (2) (3) (4)

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Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interfaceTEA1112; TEA1112A CHARACTERISTICS Iline= 15 mA; VEE =0V ; RSLPE =2 0Ω ; AGC pin connected to VEE ; Zline= 600Ω ; f = 1 kHz; Tamb =2 5°C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply (pins VLN , VCC , SLPE and REG) Vref stabilized voltage between LN and SLPE 3.1 3.35 3.6 V VLN DC line voltage I line=1m A − 1.6 − V Iline=4m A − 2.45 − V Iline= 15 mA 3.35 3.65 3.95 V Iline= 140 mA −− 6.9 V VLN(exR) DC line voltage with an external resistor RVA R VA(SLPE −REG) = 27 kΩ− 4.4 − V ΔVLN(T) DC line voltage variation with temperature referred to 25°C Tamb = −25 to +75°C −± 30 − mV ICC internal current consumption V CC = 2.9 V − 1.15 1.4 mA VCC supply voltage for peripherals Ip =0m A − 2.9 − V R CCint equivalent supply voltage impedance Ip = 0.5 mA − 550 620 Ω LED supply (pin ILED ) Iline(h) highest line current for ILED < 0.5 mA − 18 − mA Iline(l) lowest line current for maximum ILED − 76 − mA ILED(max) maximum supply current available − 19.5 − mA Microphone amplifier (pins MIC+, MIC− and GAS) Zi input impedance differential between pins MIC+ and MIC− − 64 − kΩ single-ended between pins MIC+/MIC− and VEE − 32 − kΩ G vtx voltage gain from MIC+/MIC− to LN V MIC = 2 mV (RMS) 50.6 51.8 53 dB ΔG vtx(f) gain variation with frequency referred to 1 kHz f = 300 to 3400 Hz −± 0.2 − dB ΔG vtx(T) gain variation with temperature referred to 25°C Tamb = −25 to +75°C −± 0.3 − dB CMRR common mode rejection ratio − 80 − dB ΔG vtxr gain voltage reduction range external resistor connected between GAS and REG −− 13 dB V LN(max) maximum sending signal (RMS value) Iline= 15 mA; THD = 2% 1.4 1.7 − V Iline= 4 mA; THD = 10% − 0.8 − V Vnotx noise output voltage at pin LN; pins MIC+/ MIC− shorted through 200Ω psophometrically weighted (P53 curve) −− 70.5 − dBmp

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Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interfaceTEA1112; TEA1112A Microphone mute (pins MMUTE; TEA1112 andMMUTE; TEA1112A) ΔG vtxm gain reduction in microphone MUTE mode − 80 − dB VIL LOW level input voltage V EE − 0.4 − VEE + 0.3 V VIH HIGH level input voltage V EE + 1.5 − VCC + 0.4 V IMMUTE input current input level = HIGH − 1.25 3 µA Receiving amplifier (pins IR, QR and GAR) Zi input impedance − 20 − kΩ G vrx voltage gain from IR to QR V IR = 6 mV (RMS) 29.7 31.2 32.7 dB ΔG vrx(f) gain variation with frequency referred to 1 kHz f = 300 to 3400 Hz −± 0.2 − dB ΔG vrx(T) gain variation with temperature referred to 25°C Tamb = −25 to +75°C −± 0.3 − dB ΔG vrxr gain voltage reduction range external resistor connected between GAR and QR −− 12 dB V o(rms) maximum receiving signal (RMS value) Ip = 0 mA sine wave drive; R L = 150Ω ; THD = 2% − 0.25 − V Ip = 0 mA sine wave drive; R L = 450Ω ; THD = 2% − 0.35 − V Vnorx(rms) noise output voltage at pin QR (RMS value) IR open-circuit; R L = 150Ω ; psophometrically weighted (P53 curve) −− 86 − dBVp Automatic gain control (pin AGC) ΔG vtrx gain control range for microphone and receiving amplifiers with respect to I line=1 5m A Iline=8 5m A − 5.8 − dB Istart highest line current for maximum gain − 26 − mA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

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Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interfaceTEA1112; TEA1112A Istop lowest line current for minimum gain − 61 − mA DTMF amplifier (pin DTMF) Zi input impedance − 20 − kΩ G vdtmf voltage gain from DTMF to LN in DTMF dialling or microphone MUTE mode V DTMF = 20 mV (RMS) 24.3 25.5 26.7 dB ΔG vdtmf(f) gain variation with frequency referred to 1 kHz f = 300 to 3400 Hz −± 0.2 − dB ΔG vdtmf(T) gain variation with temperature referred to 25°C Tamb = −25 to +75°C −± 0.4 − dB G vct voltage gain from DTMF to QR (confidence tone) VDTMF = 20 mV (RMS); R L = 150Ω −− 18 − dB Mute function (pins MUTE; TEA1112 andMUTE; TEA1112A) VIL LOW level input voltage V EE − 0.4 − VEE + 0.3 V VIH HIGH level input voltage V EE + 1.5 − VCC + 0.4 V IMUTE input current input level = HIGH − 1.25 3 µA ΔG trxm gain reduction for microphone and receiving amplifiers in DTMF dialling mode − 80 − dB SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

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Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interfaceTEA1112; TEA1112A

APPLICATION INFORMATION

andbook, full pagewidth Telephone line 4 x BAS11 a/b b/a VDR 95 V BZV85C10 BZX79C18 R ast1R prot 130 kΩ 390 Ω R ast2 R ast3 3.92 kΩ Zbal C IR C GAR C GARS 10 Ω IR BF473 BSN254 BC547 BC558 BC547 PD input R pd4 470 kΩ R pd5 470 kΩ R pd3 1 MΩ R pd2 470 kΩ R pd6 68 kΩ QR GAR MIC + MIC − signal from dial and control circuits C VCC supply for peripheral circuits R CC 619 Ω R SLPE R limit 3.9 Ω C GAS C REG20 Ω R pd1 470 kΩ VCC DTMF MUTE MMUTE ILEDLN SLPE GAS REG AGC VEE TEA1112 TEA1112A 100 pF 100 µF 1 nF 100 pF 4.7 µF MGD177 Fig.14 Typical application of the TEA1112; TEA1112A in sets with Pulse Dialling or Flash facilities.

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Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interfaceTEA1112; TEA1112A PACKAGE OUTLINES REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT38-4 92-11-17 95-01-14 M H c (e )1 M E A L seating plane w M e D A 2 Z E pin 1 index b 0 5 10 mm scale Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. UNIT A max. 12 b1 (1) (1) (1) b2 cD E e M ZHL mm DIMENSIONS (inch dimensions are derived from the original mm dimensions) A min. A max. b max.wM Ee1 1.73 1.30 0.53 0.38 0.36 0.23 19.50 18.55 6.48 6.20 3.60 7.80 10.0 inches 0.068 0.051 0.021 0.015 0.014 0.009 1.25 0.85 0.049 0.033 0.77 0.73 0.26 0.24 0.14 0.31 0.39 DIP16: plastic dual in-line package; 16 leads (300 mil) SOT38-4

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Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interfaceTEA1112; TEA1112A X w M θ AA 1 A 2 bp D H E Lp Q detail X E Z e c L v M A (A )3 A y pin 1 index UNIT A max. A 1 A 2 A 3 bp cD (1) E (1) (1)eH E LL p QZ ywv θ REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm inches 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 10.0 9.8 4.0 3.8 1.27 6.2 5.8 0.7 0.6 0.7 0.3 8 o o 0.25 0.1 DIMENSIONS (inch dimensions are derived from the original mm dimensions) Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 1.0 0.4 SOT109-1 95-01-23 97-05-22 076E07S MS-012AC 0.069 0.010 0.004 0.057 0.049 0.01 0.019 0.014 0.0100 0.0075 0.39 0.38 0.16 0.15 0.050 1.05 0.0410.244 0.228 0.028 0.020 0.028 0.0120.01 0.25 0.01 0.0040.039 0.016 0 2.5 5 mm scale SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1

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Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interfaceTEA1112; TEA1112A SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). DIP SOLDERING BY DIPPING OR BY WAVE The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (T stg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. R EPAIRING SOLDERED JOINTS Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300°C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400°C, contact may be up to 5 seconds. SO R EFLOW SOLDERING Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250°C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. W AVE SOLDERING Wave soldering techniques can be used for all SO packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used.
• The longitudinal axis of the package footprint must be parallel to the solder flow.
• The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260°C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150°C within 6 seconds. Typical dwell time is 4 seconds at 250°C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. R EPAIRING SOLDERED JOINTS Fix the component by first soldering two diagonally- opposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300°C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320°C.

1997 Mar 26 19

Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interfaceTEA1112; TEA1112A DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.

Internet: http://www.semiconductors.philips.com Philips Semiconductors – a worldwide company © Philips Electronics N.V. 1997 SCA53 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2870, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

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