TCZX2V0 TAK_CHEONG | Alldatasheet
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Number: DB-043 July 2008 / C Page 1 SEMICONDUCTOR TAK CHEONG 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter Value Units Power Dissipation 500 mW Storage Temperature Range -65 to +175 °C Operating Junction Temperature +175 °C These ratings are limiting values above which the serviceability of the diode may be impaired. Specification Features: Zener Voltage Range 2.0 to 39 Volts DO-35 Package (JEDEC) Through-Hole Device Type Mounting Hermetically Sealed Glass Compression Bonded Construction All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable RoHS Compliant Solder Hot Dip Tin (Sn) Terminal Finish Cathode Indicated By Polarity Band Electrical Characteristics TA = 25°C unless otherwise noted VZ@IZT Device Type VZ Tolerance Min Nom Max Izt (mA) Zzt@Izt (Ohms) Max Zzk@Izk (Ohms) Max Izk (mA) IR @VR (uA) Max VR (V) A 4.040 4.165 4.290 B 4.170 4.300 4.430 TCZX4V3 C 4.300 4.435 4.570 5 100 1000 1 5 1.0 A 4.44 4.56 4.68 B 4.55 4.68 4.80 TCZX4V7 C 4.68 4.81 4.93 5 80 900 1 5 1.0 A 4.81 4.94 5.07 B 4.94 5.07 5.20 TCZX5V1 C 5.09 5.23 5.37 5 80 800 1 5 1.5 Cathode Anode ELECTRICAL SYMBOL TCZX2V0 through TCZX39V L ZXx xxT DEVICE MARKING DIAGRAM L : Logo Device Code : TCZXxxxT VZ Tolerance (T) : A, B, C or D AXIAL LEAD DO35
Number: DB-043 July 2008 / C Page 2 SEMICONDUCTOR TAK CHEONG Electrical Characteristics TA = 25°C unless otherwise noted VZ@Izt Device Type T Tolerance Min Nom Max Izt (mA) Zzt@Izt (Ohms) Max Zzk@Izk (Ohms) Max Izk (mA) IR@VR (uA) Max VR (V) A 5.28 5.41 5.55 B 5.45 5.59 5.73 TCZX5V6 C 5.61 5.76 5.91 5 60 500 1 5 2.5 A 5.78 5.94 6.09 B 5.96 6.12 6.27 TCZX6V2 C 6.12 6.28 6.44 5 60 300 1 5 3.0 A 6.29 6.46 6.63 B 6.49 6.66 6.83 TCZX6V8 C 6.66 6.84 7.01 5 20 150 0.5 2 3.5 A 6.85 7.04 7.22 B 7.07 7.26 7.45 TCZX7V5 C 7.29 7.48 7.67 5 20 120 0.5 0.5 4.0 A 7.53 7.73 7.92 B 7.78 7.99 8.19 TCZX8V2 C 8.03 8.24 8.45 5 20 120 0.5 0.5 5.0 A 8.29 8.51 8.73 B 8.57 8.79 9.01 TCZX9V1 C 8.83 9.07 9.30 5 25 120 0.5 0.5 6.0 A 9.12 9.36 9.59 B 9.41 9.66 9.90 C 9.70 9.95 10.20 TCZX10V D 9.94 10.19 10.44 5 30 120 0.5 0.2 7.0 A 10.18 10.45 10.71 B 10.50 10.78 11.05 TCZX11V C 10.82 11.10 11.38 5 30 120 0.5 0.2 8.0 A 11.13 11.42 11.71 B 11.44 11.74 12.03 TCZX12V C 11.74 12.05 12.35 5 30 110 0.5 0.2 9.0 A 12.11 12.43 12.75 B 12.55 12.88 13.21 TCZX13V C 12.99 13.33 13.66 5 35 110 0.5 0.2 10 A 13.44 13.79 14.13 B 13.89 14.26 14.62 TCZX15V C 14.35 14.72 15.09 5 40 110 0.5 0.2 11 A 14.80 15.19 15.57 B 15.25 15.65 16.04 TCZX16V C 15.69 16.10 16.51 5 40 150 0.5 0.2 12 A 16.22 16.64 17.06 B 16.82 17.26 17.70 TCZX18V C 17.42 17.88 18.33 5 45 150 0.5 0.2 13 A 18.02 18.49 18.96 B 18.63 19.11 19.59 C 19.23 19.73 20.22 TCZX20V D 19.72 20.22 20.72 5 55 200 0.5 0.2 15 A 20.15 21.68 21.20 B 20.64 21.18 21.71 C 21.08 21.63 22.17 TCZX22V D 21.52 22.08 22.63 5 30 200 0.5 0.2 17 A 22.05 22.62 23.18 B 22.61 23.19 23.77 C 23.12 23.72 24.31 TCZX24V D 23.63 24.24 24.85 5 35 200 0.5 0.2 19 A 24.26 24.89 25.52 B 24.97 25.62 26.26 C 25.63 26.29 26.95 TCZX27V D 26.29 26.97 27.64 5 45 250 0.5 0.2 21 A 26.99 27.69 28.39 B 27.70 28.42 29.13 C 28.36 29.09 29.82 TCZX30V D 29.02 29.77 30.51 5 55 250 0.5 0.2 23
Number: DB-043 July 2008 / C Page 3 SEMICONDUCTOR TAK CHEONG Electrical Characteristics TA = 25°C unless otherwise noted VZ@Izt Device Type T Tolerance Min Nom Max Izt (mA) Zzt@Izt (Ohms) Max Zzk@Izk (Ohms) Max Izk (mA) IR@VR (uA) Max VR (V) A 29.68 30.45 31.22 B 30.32 31.10 31.88 C 30.90 31.70 32.50 TCZX33V D 31.49 32.30 33.11 5 65 250 0.5 0.2 25 A 32.14 32.97 33.79 B 32.79 33.64 34.49 C 33.40 34.27 35.13 TCZX36V D 34.01 34.89 35.77 5 75 250 0.5 0.2 27 A 34.68 35.58 36.47 B 35.36 36.28 37.19 C 36.00 36.93 37.85 TCZX39V D 36.63 37.58 38.52 5 85 250 0.5 0.2 30 VF (forward voltage) = 1.2 V maximum @ IF = 200mA for all types Notes: 1. TOLERANCE AND VOLTAGE DESIGNATION The type numbers listed have zener voltage as shown 2. SPECIALS AVAILABLE INCLUDE Nominal zener voltages between the voltages shown and tighter voltage, for detailed information on price, availability and delivery, contact you nearest Tak Cheong representative. 3. ZENER VOLTAGE (VZ) MEASUREMENT The zener voltage is measured under pulse conditions such that TJ is no more than 2℃ above TA. 4. ZENER IMPEDANCE (ZZ) DERIVATION Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the dc zener current (IZT) is superimposed to IZT . 5. WHEN ORDERING, PLEASE SPECIFY TOLERANCE A, B. C OR D
Number: DB-043 July 2008 / C Page 5 SEMICONDUCTOR TAK CHEONG Package Outline Package Case Outline DO-35 DO-35 Millimeters Inches DIM Min Max Min Max A 0.46 0.55 0.018 0.022 B 3.05 5.08 0.120 0.200 C 25.40 38.10 1.000 1.500 D 1.53 2.28 0.060 0.090 Notes: 1. All dimensions are within JEDEC standard. 2. DO35 polarity denoted by cathode band
Number: DB-100 April 14, 2008 / A DISCLAIMER NOTICE TAK CHEONG NOTICE The information presented in this document is for reference only. Tak Cheong reserves the right to make changes without notice for the specification of the products displayed herein. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controlle rs and other safety devices), Tak Cheong Semiconductor Co., Ltd., or anyone on its behalf, assumes no responsi bility or liability for any damagers resulting from such improper use of sale. This publication supersedes & replaces all information reviously supplied. For additional information, please visit our website http://www.takcheong.com , or consult your nearest Tak Cheong’s sales office for further assistance.