TCV7100AF TOSHIBA | Alldatasheet

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Technical content

Features

  • Enables up to 2.7A (@ VIN = 5V) ／2.5A (@ VIN = 3.3V) of load current (IOUT) with a minimum of external components.
  • High efficiency: η = 95% (typ.) (@V IN = 5 V, VOUT = 3.3 V, IOUT = 1 A)
  • Operating voltage range: VIN = 2.7 to 5.5 V
  • Low ON-resistance: RDS (ON) = 0.12 Ω (high side) / 0.12 Ω (low-side) typical (@VIN = 5 V, Tj = 25°C)
  • High oscillation frequency: fOSC = 800 kHz (typ.)
  • Feedback voltage: VFB = 0.8 V ± 1% (@Tj =0 to 85°C)
  • Uses internal phase compensation to achieve high efficiency with a minimum of external components.
  • Allows the use of a small surface-mount ceramic capacitor as an output filter capacitor.
  • Housed in a small surface-mount package (SOP Advance) with a low thermal resistance.
  • Soft-start time adjustable by an external capacitor Part Marking Pin Assignment This product has a MOS structure and is sensitive to electrostatic discharge. Handle with care. The product(s) in this document (“Product”) contain functions intended to protect the Product from temporary small overloads such as minor short-term overcurrent, or overheating. The protective functions do not necessarily protect Product under all circumstances. When incorporating Product into your system, please design the system (1) to avoid such overloads upon the Product, and (2) to shut down or otherwise relieve the Product of such overload conditions immediately upon occurrence. For details, please refer to the notes appearing below in this document and other documents referenced in this document. HSON8-P-0505-1.27 Weight: 0.068 g (typ.) Part Number (or abbreviation code) TCV 7100AF Lot No. The dot (•) on the top surface indicates pin 1. *: The lot number consists of three digits. The first digit represents the last di git of the year of manufacture, and the following two digits indicates the week of manufacture between 01 and either 52 or 53. Manufacturing week code (The first week of the year is 01; the last week is 52 or 53.) Manufacturing year code (last digit of the year of manufacture) VFB EN SS VIN1 VIN2 SGND LX PGND

Ordering Information

TCV7100AF (TE12L, Q) Embossed tape (3000 units per reel) Block Diagram Pin Description Pin No. Symbol Description

1 PGND Ground pin for the output section

2 V IN1 Input pin for the output section

This pin is placed in the standby state if VEN = low. Standby current is 10 μA or less.

3 V IN2 Input pin for the control section

This pin is placed in the standby state if V EN = low. Standby current is 10 μA or less.

4 SGND Ground pin for the control section

5 V FB Feedback pin

This input is fed into an internal error amplifier with a reference voltage of 0.8 V (typ.). 6 SS Soft-start pin When the SS input is left open, the soft-start time is 1 ms (typ.). The soft-start time can be adjusted with an external capacitor. The external capacitor is charged from a 8-μA (typ.) constant-current source, and the reference voltage of the error amplifier is regulated between 0 V and 0.8 V. The external capacitor is discharged when EN = low and in case of undervoltage lockout or thermal shutdown. 7 EN Enable pin When EN ≥ 1.5 V (@ VIN = 5 V), the internal circuitry is allowed to operate and thus enable the switching operation of the output section. When EN ≤ 0.5 V (@ VIN = 5 V), the internal circuitry is disabled, putting the TCV7100AF in Standby mode. This pin has an internal pull-down resistor of approx. 500 kΩ.

8 L X Switch pin

This pin is connected to high-side P-channel MOSFET and low-side N-channel MOSFET. VIN2 VFB Soft Start Ref. Voltage (0.8 V) SS EN Under voltage lockout Control logic Slope CompensationOscillator Error amplifier Driver Phase compensation Short-Circuit Protection LX PGND VIN1 Current detection SGND Constant-current source (8 μA)

Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input pin voltage for the output section V IN1 −0.3 to 6 V Input pin voltage for the control section V IN2 −0.3 to 6 V Feedback pin voltage VFB −0.3 to 6 V Soft-start pin voltage VSS −0.3 to 6 V Enable pin voltage VEN −0.3 to 6 V VEN – VIN2 voltage difference VEN-VIN2 V EN – VIN2 < 0.3 V Switch pin voltage (Note 1) V LX −0.3 to 6 V Switch pin current ILX ±3.3 A Power dissipation (Note 2) P D 2.2 W Operating junction temperature Tjopr −40 to125 °C Junction temperature (Note 3) T j 150 °C Storage temperature Tstg −55 to150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) Note 1: The switch pin voltage (V LX) doesn’t include a peak voltage generated by TCV7100AF’s switching. A negative voltage generated in dead time is allowed among the switch pin current (ILX). Thermal Resistance Characteristics Characteristics Symbol Max Unit Thermal resistance, junction to ambient R th (j-a) 44.6 (Note 2) °C/W Thermal resistance, junction to case R th (j-c) 4.17 °C/W Note 2: Note 3: The TCV7100AF may into thermal shutdown at t he rated maximum junction temperature. Thermal design is required to ensure that the rated maximum operating junction temperature, Tjopr, will not be exceeded. FR-4 25.4 × 25.4 × 0.8 (Unit: mm) Glass epoxy board Single-pulse measurement: pulse width t=10(s)

Characteristics Symbol Test Condition Min Typ. Max Unit Operating input voltage VIN (OPR) ⎯ 2.7 ⎯ 5.5 V Operating current IIN V IN1 = VIN2 = VEN = VFB = 5 V ⎯ 450 600 μA Output voltage range VOUT (OPR) VEN = VIN1 = VIN2 0.8 ⎯ ⎯ V IIN (STBY) 1 VIN1 = VIN2 = 5 V, VEN = 0 V VFB = 0.8 V ⎯ ⎯ 10 Standby current IIN (STBY) 2 VIN1 = VIN2 = 3.3 V, VEN = 0 V VFB = 0.8 V ⎯ ⎯ 10 μA High-side switch leakage current I LEAK (H) VIN1 = VIN2 = 5 V, VEN = 0 V VFB = 0.8 V, VLX = 0 V ⎯ ⎯ 10 μA VIH (EN) 1 V IN1 = VIN2 = 5 V 1.5 ⎯ ⎯ VIH (EN) 2 V IN1 = VIN2 = 3.3 V 1.5 ⎯ ⎯ VIL (EN) 1 V IN1 = VIN2 = 5 V ⎯ ⎯ 0.5 EN threshold voltage VIL (EN) 2 V IN1 = VIN2 = 3.3 V ⎯ ⎯ 0.5 V IIH (EN) 1 V IN1 = VIN2 = 5 V, VEN = 5 V 6 ⎯ 13 EN input current IIH (EN) 2 V IN1 = VIN2 = 3.3 V, VEN = 3.3 V 4 ⎯ 9 μA VFB1 VIN = 5 V, VEN = 5 V Tj = 0 to 85℃ 0.792 0.8 0.808 VFB input voltage VFB2 VIN = 3.3 V, VEN = 3.3 V Tj = 0 to 85℃ 0.792 0.8 0.808 V VFB input current IFB VIN1 = VIN2 = 2.7 to 5.5 V VFB = VIN2 −1 ⎯ 1 μA RDS (ON) (H) 1 VIN1 = VIN2 = 5 V, VEN = 5 V High-side switch on-state resistance RDS (ON) (H) 2 VIN1 = VIN2 = 3.3 V, VEN = 3.3 V Ω RDS (ON) (L) 1 VIN1 = VIN2 = 5 V, VEN = 5 V ILX = 1 A ⎯ 0.12 ⎯ Low-side switch on-state resistance RDS (ON) (L) 2 VIN1 = VIN2 = 3.3 V, VEN = 3.3 V ILX = 1 A ⎯ 0.13 ⎯ Ω Oscillation frequency fOSC V IN1 = VIN2 = VEN = 5 V 640 800 960 kHz Internal soft-start time tSS VIN1 = VIN2 = 5 V, IOUT = 0 A, Measured between 0% and 90% points at VOUT. 0.5 1 1.5 ms External soft-start charge current ISS V IN1 = VIN2 = 5 V, VEN = 5 V −5 −8 −11 μA High-side switch duty cycle Dmax V IN1 = VIN2 = 2.7 to 5.5 V ⎯ ⎯ 100 % Detection temperature T SD V IN1 = VIN2 = 5 V ⎯ 150 ⎯ Thermal shutdown (TSD) Hysteresis ΔT SD V IN1 = VIN2 = 5 V ⎯ 15 ⎯ Detection voltage V UV V EN = VIN1 = VIN2 2.35 2.45 2.6 Recovery voltage V UVR V EN = VIN1 = VIN2 2.45 2.55 2.7 Undervoltage lockout (UVLO) Hysteresis ΔV UV V EN = VIN1 = VIN2 ⎯ 0.1 ⎯ V ILIM1 V IN1 = VIN2 = 5 V, VOUT = 2 V 3.2 4.2 ⎯ A LX current limit ILIM2 V IN1 = VIN2 = 3.3 V, VOUT = 2 V 2.9 3.8 ⎯ A Note on Electrical Characteristics The test condition Tj = 25°C means a state where any drifts in electrical characteristics incurred by an increase in the chip’s junction temperature can be ignored during pulse testing.

Output Filter Capacitor Selection Use a low-ESR electrolytic or ceramic capacitor as the output filter capacitor. Since a capacitor is generally sensitive to temperature, choose one with excellent temperature characteristics. As a rule of thumb, its capacitance should be 30 μF or greater for applications where VOUT ≥ 2 V, and 60 μF or greater for applications where VOUT < 2 V. The capacitance should be set to an optimal value that meets the system’s ripple voltage requirement and transient load response characteristics. The phase margin tends to decrease as the output voltage is getting low. Enlarge a capacitance for output flatness when phase margin is insufficient, or the transient load response characteristics cannot be satisfied. Since the ceramic capacitor has a very low ESR value, it helps reduce the output ripple voltage; however, because the ceramic capacitor provides less phase margin, it should be thoroughly evaluated. Output filter capacitors with a smaller value mentioned above can be used by adding a phase compensation circuit to the V FB pin. For example, suppose using two 10μF ceramic capacitors as output filter capacitors; then the phase compensation circuit should be programmed as follows: * Set the upper cut-off frequency of C P1 and RFB1 to * Choose the value of C P2 to produce zero-frequency at 1/10th the upper cut-off frequency. ········· (4) * If R FB2 is less than half of RFB1, RP and CP2 are not (Only C P1 allows programming of VOUT above 1.8 V.) Figure 4 Phase Compensation Circuit Examples of Component Values in the Phase Compensation Circuit (For Reference Only) The following values need tuning, depending on the TCV7100AF’s I/O conditions and the board layout. VOUT C OUT R FB1 R FB2 R P C P1 C P2 1.2 V 10 μF × 2 7.5 k Ω 15 k Ω 4.7 k Ω 270 pF 2700 pF

1.51 V 10 μF × 2 16 k Ω 18 k Ω 15 k Ω 120 pF 1200 pF

1.8 V 10 μF × 2 15 k Ω 12 k Ω ⎯ 180 pF ⎯

2.5 V 10 μF × 2 5.1 k Ω 2.4 k Ω ⎯ 390 pF ⎯ 3.3 V 10 μF × 2 7.5 k Ω 2.4 k Ω ⎯ 270 pF ⎯ The phase compensation circuit shown above delivers good transient load response characteristics with small-value output filter capacitors by programming f0 (the frequency at which the open-loop gain is equal to 0dB) to a high frequency. For output filter capacitors, use low-ESR ceramic capacitors with excellent temperature characteristics (such as the JIS B characteristic). Although the external phase compensation circuit improves noise immunity, they should be thoroughly evaluated to ensure that the system’s ripple voltage requirement and transient load response characteristics are met. Soft-Start Feature The TCV7100AF has a soft-start feature. If the SS pin is left open, the soft-start time, t SS, for VOUT defaults to 1 ms (typ.) internally. The soft-start time can be extended by adding an external capacitor (CSS) between the SS and SGND pins. The soft-start time can be calculated as follows: tSS2: Soft-start time (in seconds) when an external capacitor is connected between SS and SGND. CSS: Capacitor value ( μF) The soft-start feature is activated when the TCV7100AF exits the undervoltage lockout (UVLO) state after power-up and when the voltage at the EN pin has changed from logic low to logic high. LX VFB RFB1 RFB2 VOUT CP1 CP2 RP COUT 20 μF

  • The input voltage, output voltage, output current and temperature conditions should be considered when selecting capacitors, inductors and resistors. These components should be evaluated on an actual system prototype for best selection.
  • External components such as capacitors, inductors and resistors should be placed as close to the TCV7100AF as possible.
  • The TCV7100AF has an ESD diode between the EN and VIN2 pins. The voltage between these pins should satisfy VEN − VIN2 < 0.3 V.
  • CIN should be connected as close to the PGND and VIN1 pins as possible. Operation might become unstable due to board layout. In that case, add a decoupling capacitor (CC) of 0.1 μF to 1 μF between the SGND and VIN2 pins.
  • The minimum programmable output voltage is 0.8 V (typ.). If the difference between the input and output voltages is small, the output voltage might not be regulated accurately and fluctuate significantly.
  • When TCV7100AF is in operation, a negative voltage generates since regeneration current flows in the switch pin (LX). Even if a current flows in a low side parasitic diode during the dead time of switching transistor, it doesn’t disturb operation so an external flywheel diode isn’t needed. If you have possibility of an external negative voltage generation, add a diode for protection.
  • SGND pin is connected with the back of IC chip and serves as the heat radiation pin. Secure the area of a GND pattern as large as possible for greater of heat radiation.
  • The overcurrent protection circuits in the Product are designed to temporarily protect Product from minor overcurrent of brief duration. When the overcurrent protective function in the Product activates, immediately cease application of overcurrent to Product. Improper usage of Product, such as application of current to Product exceeding the absolute maximum ratings, could cause the overcurrent protection circuit not to operate properly and/or damage Product permanently even before the protection circuit starts to operate.
  • The thermal shutdown circuits in the Product are designed to temporarily protect Product from minor overheating of brief duration. When the overheating protective function in the Product activates, immediately correct the overheating situation. Improper usage of Product, such as the application of heat to Product exceeding the absolute maximum ratings, could cause the overheating protection circuit not to operate properly and/or damage Product permanently even before the protection circuit starts to operate.

Typical Performance Characteristics 0 2 4 6 200 400 600 VEN = VFB = VIN Tj = 25°C VIN = 5.5 V Tj = 25°C 0 2 4 6 5 3 1 −50 −25 0 25 50 75 125 100 VEN = VIN = 5 V VFB = VIN −50 0 25 50 100 125 −25 75 VIN = 5 V VIH(EN) VIL(EN) −50 −25 0 25 50 75 100 125 VIN = 3.3 V VIH(EN) VIL(EN) −50 −25 0 25 50 75 125 100 IIN – VIN IIN – Tj Input voltage V IN ( V ) Junction temperature T j (°C) Operating current I IN ( μA) Operating current I IN ( μA) IIN – Tj VIH(EN), VIL(EN) – Tj Junction temperature T j (°C) Junction temperature T j (°C) Operating current I IN ( μA) EN threshold voltage VIH(EN), VIL(EN) ( V ) VIH(EN), VIL(EN) – Tj IIH(EN) – VEN Junction temperature T j (°C) EN input voltage V EN (V) EN threshold voltage VIH(EN), VIL(EN) ( V ) EN input current IIH(EN) ( μA) 200 400 600 200 400 600 1.5 0.5 1.5 0.5 VEN = VIN = 3.3 V VFB = VIN

Undervoltage lockout voltage VUV, VUVR (V) 2 3 4 5 6 0.8 0.82 0.78 VEN = VIN VOUT = 1.2 V Tj = 25°C VIN = 5 V VEN = 5 V −50 −25 0 50 75 100 125 25 VEN = VIN Tj = 25°C 1.5 0.5 Recovery voltage (VUVR) Detection voltage (VUV) −50 −25 0 25 50 75 100 125 2.6 2.3 2.5 2.4 VEN = VIN VIN = 5 V VOUT = 1.2 V VEN = VIN −50 0 25 50 75 100 125 −25 0.8 0.82 0.78 0.79 0.81 VIN = 3.3 V VOUT = 1.2 V VEN = VIN −50 −25 0 25 50 75 125 100 0.8 0.82 0.78 0.79 0.81 IIH(EN) – Tj VUV, VUVR – Tj Junction temperature T j (°C) Junction temperature T j (°C) EN input current IIH(EN) ( μA) VOUT – VIN VFB – VIN Input voltage V IN ( V ) Input voltage V IN ( V ) Output voltage V OUT (V) VFB input voltage V FB (V) VFB – Tj VFB – Tj Junction temperature T j (°C) Junction temperature T j (°C) VFB input voltage V FB (V) VFB input voltage V FB (V) 0.79 0.81

Tj = 25°C 900 1000 600 700 800 VIN = 5 V Tj = 25°C 2 3 4 5 6 VIN = 3.3 V VIN = 5 V −50 −25 0 25 50 75 100 125 fosc – VIN fosc – Tj Input voltage V IN ( V ) Junction temperature T j (°C) Oscillation frequency f osc (kHz) Oscillation frequency f osc (kHz) ISS – VIN ISS – Tj Input voltage V IN ( V ) Junction temperature T j (°C) External soft-start charge current ISS ( μA) External soft-start charge current ISS ( μA) ISS – Tj Junction temperature T j (°C) External soft-start charge current ISS ( μA) 900 1000 600 700 800 −12 −10 −12 −10 −50 −25 0 25 50 75 100 125 −50 −25 0 25 50 75 100 125 −12 −10

VIN = 3.3 V, VOUT = 1.2 V L = 2.2 μH, COUT = 68 μF Ta = 25°C VIN = 5 V, VOUT = 3.3 V L = 2.2 μH, COUT = 47 μF Ta = 25°C −30 −10 −20 0 1 3 2 ΔVOUT – IOUT ΔVOUT – IOUT Output current I OUT (A) Output current I OUT (A) Output voltage ΔVOUT ( m V ) Output voltage ΔVOUT ( m V ) ΔVOUT – IOUT ΔVOUT – VIN Output current I OUT (A) Input voltage V IN ( V ) Output voltage ΔVOUT ( m V ) Output voltage ΔVOUT ( m V ) ΔVOUT – VIN η – IOUT Input voltage V IN ( V ) Output current I OUT (A) Output voltage ΔVOUT ( m V ) Efficiency η (%) 0 1 3 2 −10 −20 0 1 3 2 −10 −20 VIN = 5 V, VOUT = 1.2 V L = 2.2 μH, COUT = 68 μF Ta = 25°C −20 −40 2 3 4 5 6 VOUT = 3.3 V, IOUT = 10 mA L = 2.2 μH, COUT = 47 μF Ta = 25°C −10 −30 −10 −20 2 3 4 5 6 VOUT = 1.2 V, IOUT = 10 mA L = 2.2 μH, COUT = 68 μF Ta = 25°C 0 1 3 2 100 VIN = 5 V, VOUT = 3.3 V L = 2.2 μH, COUT = 47 μF Ta = 25°C

Output voltage: VOUT: (1 V/div) EN voltage: VEN = L → H η – IOUT Output current I OUT (A) Output current I OUT (A) Efficiency η (%) Efficiency η (%) Overcurrent Protection Overcurrent Protection Output current I OUT (A) Output current I OUT (A) Output voltage V OUT (V) Output voltage V OUT (V) Startup Characteristics (Internal Soft-Start Time) Startup Characteristics (CSS = 0.1 μF) 200 μs/div 2 ms/div 0 1 3 2 100 100 η – IOUT VIN = 3.3 V, VOUT = 1.2 V L = 2.2 μH, COUT = 68 μF Ta = 25°C VIN = 5 V, VOUT = 1.2 V L = 2.2 μH, COUT = 68 μF Ta = 25°C Output voltage: VOUT: (1 V/div) EN voltage: VEN = L → H VIN = 5 V VOUT = 3.3 V Ta = 25°C CSS = 0.1μF VIN = 5 V VOUT = 3.3 V Ta = 25°C 2 3 5 4 VOUT = 3.3 V, Ta = 25°C L = 2.2 μH, COUT = 47 μF Input voltage: VIN = 5.5 V 2 3 5 4 1.5 VOUT = 1.2 V, Ta = 25°C L = 2.2 μH, COUT = 68 μF 0.5 Input voltage: VIN = 5.5 V Input voltage: VIN = 2.7 V

Load Response Characteristics Load Response Characteristics 200 μs/div 200 μs/div Load Response Characteristics Load Response Characteristics 200 μs/div 200 μs/div Load Response Characteristics (with an External Phase Compensation Circuit) 200 μs/div VIN = 3.3 V, VOUT = 1.2 V, Ta = 25°C L = 2.2 μH, COUT = 68 μF Output voltage: VOUT (100 mV/div) Output current: IOUT (10 mA → 2 A → 10 mA) Output current: IOUT Output voltage: VOUT (50 mV/div) VIN = 5 V, VOUT = 1.2 V, Ta = 25°C L = 2.2 μH, COUT = 68 μF Output current: IOUT Output voltage: VOUT (50 mV/div) VIN = 5 V, VOUT = 1.2 V, Ta = 25°C L = 2.2 μH, COUT = 10 μF × 2 RP = 4.7 kΩ, CP1 = 270 pF, CP2 = 2700 pF Output current: IOUT (10 mA → 2 A → 10 mA) VIN = 5 V, VOUT = 3.3 V, Ta = 25°C L = 2.2 μH, COUT = 47 μF Output voltage: VOUT (100 mV/div) Output voltage: VOUT (100 mV/div) Output current: IOUT (10 mA → 2 A → 10 mA) VIN = 5 V, VOUT = 1.2 V, Ta = 25°C L = 2.2 μH, COUT = 68 μF

HSON8-P-0505-1.27 Unit: mm Weight: 0.068 g (typ.)

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