TCS800 ETC | Alldatasheet
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R.-.061300 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.GHZ.COM OR CONTACT OUR FACTORY DIRECT. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 TCS800
800 Watts, 50 Volts, Pulsed
The TCS800 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030 MHz, with the pulse width and duty required for TCAS applications. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55SM Style 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @25°C 1 1944 W Maximum Voltage and Current Collector to Base Voltage (BVces)6 5 V Emitter to Base Voltage (BVebo)3 . 5 V Collector Current (Ic)5 0 A Maximum Temperatures Storage Temperature -65 to +200 °C Operating Junction Temperature +230 °C ELECTRICAL CHARACTERISTICS @ 25 °C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Power Out F = 1030 MHz 800 W Pin Power Input 120 W Pg Power Gain 8.0 9.0 dB ηc Collector Efficiency 45 % R L Input Return Loss V CC = 50 Volts PW = 32 µsec DF = 1% -12 dB Pd Pulse Droop 0.5 dB VSWR Load Mismatch Tolerance F = 1030 MHz 4:1 FUNCTIONAL CHARACTERISTICS @ 25 °C BV ebo* Emitter to Base Breakdown Ie = 70 mA 3.5 V BV ces Collector to Emitter Breakdown Ic = 100 mA 65 V hFE * DC – Current Gain Vce = 5V, Ic = 5A 20 θjc1 Thermal Resistance 0.09 °C/W NOTE 1: At rated output power and pulse conditions. *: Not measureable due to internal EB returns
Output Power & Power Gain Vs Input Power 200 400 600 800 1000 1200 1400 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 Input Power (Watts peak) Output Power (Watts peak) Power Gain (dB)Pout (W) Power Gain