TCS1200 MICROSEMI | Alldatasheet
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Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. TCS1200
1200 Watts, 53 Volts
Pulsed Avionics at 1030 MHz PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The TCS1200 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for TCAS applications. The device has gold thin-film metalization and emitter ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55TU-1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25°C1 2095 W Maximum Voltage and Current Collector to Base Voltage (BVces) 65 V Emitter to Base Voltage (BVebo) 3.5 V Collector Current (Ic) 60 A Maximum Temperatures Storage Temperature -65 to +200 °C Operating Junction Temperature +200 °C ELECTRICAL CHARACTERISTICS @ 25°°°°C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Power Out Pulse Width = 32µs 1200 W Pg Power Gain Duty Factor = 2% 10.2 dB ηc Collector Efficiency 45 % RL Return Loss -10 dB Tr Rise Time 100 ns Pd Pulse Droop 0.7 dB VSWR Load Mismatch Tolerance 1 F = 1030 MHz, Vcc = 53 Volts Pin = 115 Watts 3.0:1 FUNCTIONAL CHARACTERISTICS @ 25°°°°C BVebo Emitter to Base Breakdown Ie = 40 mA 3.5 V BVces Collector to Emitter Breakdown Ic = 100 mA 65 V hFE DC – Current Gain Vce = 5V, Ic = 5A 20 θjc1 Thermal Resistance 0.02 °C/W NOTES: 1. At rated output power and pulse conditions Preliminary – May 2007
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. TCS1200