TCR2EE24

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Document overview

• PDF pages: 17

Technical content

Features

• Low dropout voltage VDO = 150 mV (typ.) at 3.0 V output, IOUT = 150 mA VDO = 180 mV (typ.) at 2.5 V output, IOUT = 150 mA VDO = 230 mV (typ.) at 1.8 V output, IOUT = 150 mA VDO = 380 mV (typ.) at 1.2 V output, IOUT = 150 mA VDO = 510 mV (typ.) at 1.0 V output, IOUT = 150 mA
• Low output noise voltage (VNO = 35 μVrms (typ.) at 2.5 V output, IOUT = 10 mA, 10 Hz < f < 100 kHz)
• Fast load transient response (⊿VOUT = ±60 mV (typ.) at IOUT = 1 mA ⇔ 150 mA, COUT =1.0 μF)
• Low quiescent bias current (IB = 35 μA (typ.) at IOUT = 0 mA)
• High ripple rejection ratio (73 dB (typ.) at 2.5 V output, IOUT = 10 mA, f = 1 kHz)
• Wide range output voltage line up (VOUT = 1.0 to 5.0 V)
• High VOUT accuracy ±1.0 % (1.8 V ≤ VOUT)
• Overcurrent protection
• Auto-discharge
• Pull down connection between CONTROL and GND
• Ceramic capacitors can be used (CIN = 0.1 μF, COUT = 1.0 μF)
• Small package ESV (SOT-553) (1.6 mm x 1.6 mm x 0.55 mm) General package SMV (SOT-25) (2.8 mm x 2.9 mm x 1.1 mm) SMV ESV Weight : SMV (SOT-25)(SC-74A) : 16 mg ( typ.) ESV (SOT-553) : 3.0 mg ( typ .) Start of commercial production 2012-10

TCR2EF series, TCR2EE series 2019-06-20 2 © 2017-2019 Toshiba Electronic Devices & Storage Corporation Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage VOUT -0.3 to VIN + 0.3 V Power dissipation PD SMV 200 (Note 1) mW 580 (Note 2) ESV 150 (Note 1) 320 (Note 3) Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Unit Rating Note 2: Rating at mounting on a board (FR4 board dimension: 25.4 mm × 25.4 mm × 1.6 mm) Note 3: Rating at mounting on a board (FR4 board dimension: 30 mm × 30 mm × 0.8 mm) Operating Ranges Note 4: IOUT = 1 mA. Please refer to Dropout voltage (Page 5) and use it within Absolute Maximum Ratings Junction temperature and Operation Temperature Ranges. Note 5: Do not operate at or near the maximum ratings of operating ranges for extended periods of time. Exposure to such conditions may adversely impact product reliability and results in failures not covered by warranty. Characteristics Symbol Rating Unit Input voltage VIN 1.5 to 5.5 V (Note 4) V Control voltage VCT 0 to 5.5 V Output voltage VOUT 1.0 to 5.0 V Output current IOUT DC 200 (Note 5) mA Operation Temperature Topr -40 to 85 °C Output Capacitance COUT ≥ 1.0 μF ― Input Capacitance CIN ≥ 0.1 μF ―

TCR2EF series, TCR2EE series 2019-06-20 3 © 2017-2019 Toshiba Electronic Devices & Storage Corporation Pin Assignment (top view) SMV(SOT-25)(SC-74A) ESV(SOT -553) VOUT CONTROL GND NC VIN VOUT CONTROL GND NC VIN

TCR2EF series, TCR2EE series 2019-06-20 4 © 2017-2019 Toshiba Electronic Devices & Storage Corporation List of Products Number, Output voltage and Marking Product No. VOUT (V) (typ.) Marking Product No. VOUT (V) (typ.) Marking SMV(SOT-25) ESV(SOT-553) SMV(SOT-25) ESV(SOT-553) TCR2EF10 TCR2EE10 1.0 1N0 TCR2EF28 TCR2EE28 2.8 2N8 TCR2EF105 TCR2EE105 1.05 1NA TCR2EF285 TCR2EE285 2.85 2ND TCR2EF11 TCR2EE11 1.1 1N1 TCR2EF29 TCR2EE29 2.9 2N9 TCR2EF115 TCR2EE115 1.15 1NB - TCR2EE295 2.95 2NE TCR2EF12 TCR2EE12 1.2 1N2 TCR2EF30 TCR2EE30 3.0 3N0 TCR2EF125 TCR2EE125 1.25 1NC - TCR2EE305 3.05 3NA TCR2EF13 TCR2EE13 1.3 1N3 TCR2EF31 TCR2EE31 3.1 3N1 TCR2EF135 TCR2EE135 1.35 1ND TCR2EF32 TCR2EE32 3.2 3N2 TCR2EF14 TCR2EE14 1.4 1N4 TCR2EF33 TCR2EE33 3.3 3N3 - TCR2EE145 1.45 1NE - TCR2EE335 3.35 3ND TCR2EF15 TCR2EE15 1.5 1N5 - TCR2EE34 3.4 3N4 - TCR2EE17 1.7 1N7 - TCR2EE35 3.5 3N5 TCR2EF18 TCR2EE18 1.8 1N8 TCR2EF36 TCR2EE36 3.6 3N6 - TCR2EE185 1.85 1NF - TCR2EE39 3.9 3N9 TCR2EF19 TCR2EE19 1.9 1N9 TCR2EF40 TCR2EE40 4.0 4N0 TCR2EF20 TCR2EE20 2.0 2N0 TCR2EF41 TCR2EE41 4.1 4N1 - TCR2EE24 2.4 2N4 - TCR2EE42 4.2 4N2 TCR2EF25 TCR2EE25 2.5 2N5 TCR2EF45 TCR2EE45 4.5 4N5 TCR2EF27 TCR2EE27 2.7 2N7 - TCR2EE48 4.8 4N8 - TCR2EE275 2.75 2NF TCR2EF50 TCR2EE50 5.0 5N0 Please ask your local retailer about the devices with other output voltages. Marking (top view) Example: TCR2EF33 (3.3 V output) Example: TCR2EE33 (3.3 V output)

3 N 3

TCR2EF series, TCR2EE series 2019-06-20 5 © 2017-2019 Toshiba Electronic Devices & Storage Corporation

Electrical Characteristics

(Unless otherwise specified, VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 0.1 μF, COUT = 1.0 μF, Tj = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Output voltage accuracy VOUT IOUT = 50 mA (Note 6) VOUT < 1.8 V -18 ― +18 mV Input voltage VIN IOUT = 1 mA 1.5 ― 5.5 V Line regulation Reg･line VOUT + 0.5 V ≤ VIN ≤ 5.5 V, IOUT = 1 mA ― 1 15 mV Load regulation Reg･load 1 mA ≤ IOUT ≤ 150 mA ― 15 30 mV Quiescent current IB IOUT = 0 mA ― 35 60 μA Stand-by current IB (OFF) VCT = 0 V ― 0.1 1.0 μA Dropout voltage VDO IOUT = 150 mA (Note 7) ― 180 230 mV Temperature coefficient TCVO −40°C ≤ Topr ≤ 85°C ― 100 ― ppm/°C Output noise voltage VNO VIN = VOUT + 1 V, IOUT = 10 mA,

10 Hz ≤ f ≤ 100 kHz (Note 7)

― 35 ― μVrms Ripple rejection ratio R.R. VIN = VOUT + 1 V, IOUT = 10 mA, f = 1 kHz, VRipple = 500 mVp-p (Note 7) ― 73 ― dB Load transient response ⊿VOUT IOUT = 1 mA⇔150 mA, COUT = 1.0 μF ― ±60 ― mV Control voltage (ON) VCT (ON) ― 1.0 ― 5.5 V Control voltage (OFF) VCT (OFF) ― 0 ― 0.4 V Note 6: St able state with fixed IOUT condition Note 7: The 2.5 V output product Note 8: All characterisitcs of over 4.5 V output products are measured at VIN = VOUT + 0.5 V conditions. Dropout voltage (IOUT = 150 mA, CIN = 0.1 μF, COUT = 1.0 μF, Tj = 25°C) Output voltages Symbol Min Typ. Max Unit 1.0 V, 1.05 V VDO ― 510 770 mV 1.1 V, 1.15 V ― 440 670 1.2 V, 1.25 V ― 380 570

1.3 V ― 350 470

1.4 V ― 310 420

1.5 V ≤ VOUT < 1.8 V ― 290 390 1.8 V ≤ VOUT < 2.5 V ― 230 310 2.5 V ≤ VOUT < 3.0 V ― 180 230 3.0 V ≤ VOUT ≤ 5.0 V ― 150 200

TCR2EF series, TCR2EE series 2019-06-20 6 © 2017-2019 Toshiba Electronic Devices & Storage Corporation Application Note 1. Examples of Application Circuit SMV ESV The figures above show the examples of configuration for using a Low dropout regulator. Insert a capacitor at VOUT and VIN pins for stable input/output operation. (Ceramic capacitors can be used). 2. Power Dissipation Both unit and board mounted power dissipation ratings for TCR2EF series and TCR2EE series are available in the Absolute Maximum Ratings table. Power dissipation is measured on the board shown below. Test Board for Thermal Resistance CONTROL pin connection Operation HIGH ON LOW OFF OPEN OFF SMV ESV Ambient temperature Ta (℃) PD – Ta (ESV) Power dissipation P D (mW) −40 120 100 200 300 400 ① Board dimension 30 mm x 30 mm, x 0.8 mm Copper area 20 mm 2, mounted on FR4 Board ② Unit Rating *Board material: FR4 board Board dimension: 30 mm × 30 mm × 0.8 mm Copper area: 20 mm2 *Board material: FR4 board Board dimension: 25.4 mm × 25.4 mm × 1.6 mm Copper area: 645 mm2 VOUT GND VIN 1.0 μF 0.1 μF CONTROL NC VOUT GND VIN 1.0 μF 0.1 μF CONTROL NC Ambient temperature Ta (℃) PD – Ta (SMV) Power dissipation P D (mW) −40 120 200 400 600 800 ① Board dimension 25.4 mm x 25.4 mm, x 1.6 mm Copper area 645 mm 2, mounted on FR4 Board ② Unit Rating

TCR2EF series, TCR2EE series 2019-06-20 7 © 2017-2019 Toshiba Electronic Devices & Storage Corporation Attention in Use

• Output Capacitors Ceramic capacitors can be used for these devices. However, because of the type of the capacitors, there might be unexpected thermal features. Please consider application condition for selecting capacitors. And Toshiba recommends the ESR of ceramic capacitor be under 10 Ω.
• Mounting The long distance between IC and output capacitor might affect phase compensation by impedance in wire and inductor. For stable power supply, output capacitor need to mount near IC as much as possible. Also V IN and GND pattern need to be large and make the wire impedance small as possible.
• Permissible Loss Please have enough des ign patterns for expected maximum permissible loss. And under consideration of ambient temperature, input voltage, and output current etc., we recommend proper dissipation ratings for maximum permissible loss; in general maximum dissipation rating is 70 to 80 percent.
• Overcurrent Protection Overcurrent protection is designed in these products, but this does not assure for the suppression of uprising device operation. If output pins and GND pins are shorted out, these products might break down. In use of these products, please read through and understand dissipation idea for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook ’. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba recommends inserting failsafe system into the design.

TCR2EF series, TCR2EE series 2019-06-20 8 © 2017-2019 Toshiba Electronic Devices & Storage Corporation Representative Typical Characteristics(Note) 1) Output voltage vs. Input voltage 2) Output voltage vs. Output current Output voltage V OUT (V) Output current IOUT (mA) Input voltage V IN (V) Output voltage V OUT (V) Input voltage V IN (V) Output voltage V OUT (V) Output current I OUT ( mA) Input voltage V IN (V) Input voltage V IN (V) VIN = 2.2 V, CIN = 0.1 μF, COUT = 1 μF VIN = 2.8 V, CIN = 0.1 μF, COUT = 1 μF VOUT = 1.2 V VOUT = 1.8 V VOUT = 1.2 V VOUT = 1.8 V VOUT = 2.5 V CIN = 0.1 μF, COUT = 1 μF IOUT = 1mA IOUT = 150mA IOUT = 50mA CIN = 0.1 μF, COUT = 1 μF CIN = 0.1 μF, COUT = 1 μF VOUT = 3.0 V CIN = 0.1 μF, COUT = 1 μF IOUT = 1mA IOUT = 150mA IOUT = 50mA IOUT = 1mA IOUT = 150mA IOUT = 50mA IOUT = 1mA IOUT = 150mA IOUT = 50mA Output voltage V OUT (V) Output voltage V OUT (V) Output voltage V OUT (V)

TCR2EF series, TCR2EE series 2019-06-20 9 © 2017-2019 Toshiba Electronic Devices & Storage Corporation 3) Output voltage vs. Ambient temperature Output voltage V OUT (V) Output current IOUT (mA) VIN = 3.5 V, CIN = 0.1 μF, COUT = 1 μF VIN = 4.0 V, CIN = 0.1 μF, COUT = 1 μF Output voltage V OUT (V) Output current I OUT ( mA) VOUT = 2.5 V VOUT = 3.0 V VOUT = 1.2 V VOUT = 1.8 V VOUT = 2.5 V VOUT = 3.0 V VIN = 2.2 V, CIN = 0.1 μF, COUT = 1 μF IOUT = 50 mA VIN = 2.8 V, CIN = 0.1 μF, COUT = 1 μF IOUT = 50 mA VIN = 3.5 V, CIN = 0.1 μF, COUT = 1 μF IOUT = 50 mA VIN = 4.0 V, CIN = 0.1 μF, COUT = 1 μF IOUT = 50 mA Output voltage V OUT (V) Ambient temperature Ta (°C) Output voltage V OUT (V) Ambient temperature Ta ( °C) Output voltage V OUT (V) Output voltage V OUT (V) Ambient temperature Ta ( °C) Ambient temperature Ta (°C)

TCR2EF series, TCR2EE series 2019-06-20 10 © 2017-2019 Toshiba Electronic Devices & Storage Corporation 4) Dropout voltage vs. Output current 5) Quiescent current vs. Input voltage CIN = 0.1 μF, COUT = 1 μF CIN = 0.1 μF, COUT = 1 μF VOUT = 1.2 V VOUT = 1.8 V Dropout voltage V DO (mV) Output current I OUT ( mA) Quiescent current I B (μA) VOUT = 1.2 V VOUT = 1.8 V Input voltage V IN ( V) Quiescent current I B (μA) Input voltage V IN ( V) VOUT = 2.5 V VOUT = 3.0 V Dropout voltage V DO (mV) Output current I OUT ( mA) Dropout voltage V DO (mV) Output current I OUT ( mA) Dropout voltage V DO (mV) Output current I OUT ( mA) CIN = 0.1 μF, COUT = 1 μF IOUT = 0 mA CIN = 0.1 μF, COUT = 1 μF IOUT = 0 mA CIN = 0.1 μF, COUT = 1 μF CIN = 0.1 μF, COUT = 1 μF

TCR2EF series, TCR2EE series 2019-06-20 11 © 2017-2019 Toshiba Electronic Devices & Storage Corporation 6) Quiescent current vs. Ambient temperature VOUT = 1.2 V VOUT = 1.8 V VOUT = 2.5 V VOUT = 3.0 V VIN = 2.2 V CIN = 0.1 μF, COUT = 1 μF IOUT = 0 mA VIN = 2.8 V CIN = 0.1 μF, COUT = 1 μF IOUT = 0 mA VIN = 3.5 V CIN = 0.1 μF, COUT = 1 μF IOUT = 0 mA VIN = 4.0 V CIN = 0.1 μF, COUT = 1 μF IOUT = 0 mA Quiescent current I B (μA) Quiescent current I B (μA) Quiescent current I B (μA) Quiescent current I B (μA) Ambient temperature Ta (°C) Ambient temperature Ta (°C) Ambient temperature Ta ( °C) Ambient temperature Ta (°C) VOUT = 2.5 V VOUT = 3.0 V CIN = 0.1 μF, COUT = 1 μF IOUT = 0 mA CIN = 0.1 μF, COUT = 1 μF IOUT = 0 mA Input voltage V IN ( V) Input voltage V IN ( V) Quiescent current I B (μA) Quiescent current I B (μA)

TCR2EF series, TCR2EE series 2019-06-20 12 © 2017-2019 Toshiba Electronic Devices & Storage Corporation 7) Output voltage vs. Output current 8) Ripple rejection ratio vs. Frequency VIN = 2.2 V ,Vripple = 500 mVp−p CIN = none, COUT = 1 μF IOUT = 10 mA, Ta = 25°C VIN = 4.0 V, Vripple = 500 mVp−p CIN = none, COUT = 1 μF IOUT = 10 mA, Ta = 25°C VOUT = 1.2 V VOUT = 3.0 V VOUT = 1.2 V VOUT = 1.8 V VOUT = 2.5 V VOUT = 3.0 V Pulse width = 1 ms Pulse width = 1 ms VIN = 5.5V Output voltage V OUT (V) Output current I OUT ( mA) Output voltage V OUT (V) Output current IOUT (mA) Output voltage V OUT (V) Output current I OUT ( mA) Output voltage V OUT (V) Output current I OUT ( mA) Ripple rejection ratio (dB) Frequency f (Hz) Ripple rejection ratio (dB) Frequency f (Hz) VIN = 2.2V VIN = 5.5V VIN = 2.8V VIN = 5.5V VIN = 5.5V VIN = 3.5V VIN = 4.0V Pulse width = 1 ms Pulse width = 1 ms

TCR2EF series, TCR2EE series 2019-06-20 13 © 2017-2019 Toshiba Electronic Devices & Storage Corporation 9) Control Tra nsient Response Control voltage VCT (V) Output voltage VOUT (V) VIN = 2.2 V, CIN = 0.1 μF, COUT = 1 μF IOUT = 1mA VOUT = 1.2 V VOUT = 1.8 V VOUT = 2.5 V VOUT = 3.0 V 1.0 2.0 1.0 2.0 1.0 2.0 1.0 2.0 1.0 2.0 1.0 2.0 VIN = 2.8 V, CIN = 0.1 μF, COUT = 1 μF 1.0 2.0 1.0 2.0 VIN = 3.5 V, CIN = 0.1 μF, COUT = 1 μF VIN = 4.0 V, CIN = 0.1 μF, COUT = 1 μF 3.0 3.0 Time t (25 μs/div) Time t (25 μs/div) Time t (25 μs/div) Time t (25 μs/div) IOUT = 50mA IOUT = 150mA IOUT = 1mA IOUT = 50mA IOUT = 150mA IOUT = 1mA IOUT = 50mA IOUT = 150mA IOUT = 1mA IOUT = 50mA IOUT = 150mA Control voltage VCT (V) Output voltage VOUT (V) Control voltage VCT (V) Output voltage VOUT (V) Control voltage VCT (V) Output voltage VOUT (V)

TCR2EF series, TCR2EE series 2019-06-20 14 © 2017-2019 Toshiba Electronic Devices & Storage Corporation 10) Control Transient Response (Note) The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. VIN = 2.2 V, CIN = 0.1 μF, COUT = 1 μF VIN = 2.8 V, CIN = 0.1 μF, COUT = 1 μF VIN = 3.5 V, CIN = 0.1 μF, COUT = 1 μF 200 400 1.2 1.3 1.1 200 400 2.5 2.6 2.4 200 400 1.8 1.9 1.7 200 400 3.0 3.1 2.9 VIN = 4.0 V, CIN = 0.1 μF, COUT = 1 μF Output current IOUT (mA) Output voltage ⊿VOUT (V) Time t ( 25 μs/div) Time t ( 25 μs/div) VOUT = 1.2 V (IOUT = 1 mA ⇔ 150 mA) VOUT = 1.8 V (IOUT = 1 mA ⇔ 150 mA) VOUT = 2.5 V (IOUT = 1 mA ⇔ 150 mA) VOUT = 3.0 V (IOUT = 1 mA ⇔ 150 mA) Time t ( 25 μs/div) Time t ( 25 μs/div) Output current IOUT (mA) Output voltage ⊿VOUT (V) Output current IOUT (mA) Output voltage ⊿VOUT (V) Output current IOUT (mA) Output voltage ⊿VOUT (V)

TCR2EF series, TCR2EE series 2019-06-20 15 © 2017-2019 Toshiba Electronic Devices & Storage Corporation Package Dimensions SMV (SOT -25)(SC-74A) Unit: mm Weight : 16 mg (typ.)

TCR2EF series, TCR2EE series 2019-06-20 16 © 2017-2019 Toshiba Electronic Devices & Storage Corporation Package Dimensions ESV (SOT -553) Unit: mm Weight: 3.0 mg (typ.)

TCR2EF series, TCR2EE series 2019-06-20 17 © 2017-2019 Toshiba Electronic Devices & Storage Corporation RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”.

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