TCR13AGADJ

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Document overview

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• PDF pages: 21

Technical content

Features

• Low dropout voltage VDO = 92 mV (typ.) at 0.9 V output, VBIAS = 3.3 V, IOUT = 1.0 A
• Wide range output voltage (Adjustable from 0.55 V to 3.6 V)
• Fast load transient response -100 / +115 mV (typ.) at 0.01 A⇔1 A, COUT ≥ 4.7 μF
• Overcurrent protection
• Thermal shutdown
• Inrush current reduction
• Under voltage lockout
• Soft start function
• Auto-discharge
• Pull down connection between CONTROL and GND
• Ultra small package WCSP6F (0.8 mm x 1.2 mm (typ.), t: 0.33 mm (max))
• Stable with over 4.7 μF Input capacitor, 1.0 μF Bias capacitor and 4.7 μF output ceramic capacitor Notice This device is sensitive to electrostatic discharge. Please ensure equipment, operator and tools are adequately earthed when handling. WCSP6F Weight : 0.61 mg ( typ.) Start of commercial production 2016-11

2 © 2017 - 2018 Toshiba Electronic Devices & Storage Corporation Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Rating at mounting on a board (Glass epoxy board (FR4) dimension: 40 mm x 40 mm (4 layer), t = 1.8 mm Metal pattern ratio: approximately 70 % each layer) Operating Ranges Note 2: I OUT = 1 mA. Please refer to Dropout voltage vs. Output current(Page 12), and use it within Absolute Maximum Ratings Junction temperature and Operation Temperature Ranges. Note 3: Output voltage adjustable type. Please refer to Application Note (Page 7). Note 4: Do not operate at or near the maximum ratings of operating ranges for extended periods of time. Exposure to such conditions may adversely impact product reliability and results in failures not covered by warranty. Maximum output current of operating ranges table is defined as lifetime average junction temperature of +45℃ where maximum output current = lifetime average current to avoid electro migration. Characteristics Symbol Rating Unit Bias voltage VBIAS 6.0 V Input voltage VIN 6.0 V Control voltage VCT -0.3 to 6.0 V Adjustable voltage VADJ -0.3 to 6.0 V Output voltage VOUT -0.3 to VIN + 0.3 ≤ 6.0 V Power dissipation PD 1.9 (Note 1) W Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C Characteristics Symbol Rating Unit Bias voltage VBIAS VOUT ≤ 1.1 V, IOUT = 1 mA 2.5 to 5.5 V VOUT > 1.1 V, IOUT = 1 mA V OUT + 1.4 V to 5.5 Input voltage VIN VOUT + 0.1 V to V BIAS (Note 2) V Control voltage VCT -0.3 to VBIAS V Output voltage VOUT 0.55 to 3.6 (Note 3) V Output current IOUT 1. 3 (Max) (Note 4) A Operation Temperature Topr -40 to 85 °C COUT COUT ≥ 4.7μF ― CIN CIN ≥ 4 .7μF ― CBIAS CBIAS ≥ 1.0μF ―

3 © 2017 - 2018 Toshiba Electronic Devices & Storage Corporation Pin Assignment (top view) Top Marking (top view) 1 2 A VOUT V IN B VADJ CONTROL C GND V BIAS 1 2 A B C XJX 1 2 A B C

4 © 2017 - 2018 Toshiba Electronic Devices & Storage Corporation Block Diagram Operation Logic table Control inputs Output voltage(V) High VOUT Low 0 V (Output discharge) V IN V OUT GND CONTROL V BIAS Thermal shutdown Pull down Under voltage lockout Control Logic Current Limit V ADJ

5 © 2017 - 2018 Toshiba Electronic Devices & Storage Corporation

Electrical Characteristics

(Unless otherwise specified, VIN = VOUT + 0.5 V, IOUT = 50 mA, CIN = 4.7 μF, CBIAS = 1.0 μF, COUT = 4.7 μF) Note 5: Please refer to Dropout v oltage vs. Output current (Page 12), and use it within Absolute Maximum Ratings Junction temperature and Operation Temperature Ranges. Note 6: This parameter is tested at VOUT = 0.9 V. Control pull down current and external resistors current not included in this parameter. Note 7: This parameter is tested at V OUT = 0.9 V. Note 8: This parameter is war ranted by design. Note 9: V DO = VIN1 - (VOUT1 - 100 mV) VOUT1 is the output voltage when VIN = VOUT + 0.5 V. VIN1 is the input voltage at which the output voltage becomes 100 mV drop of VOUT1 after gradually decreasing the input voltage Characteristics Symbol Test Condition Tj = 25°C Tj = -40 to 85°C (Note 8) Unit Min Typ. Max Min Max Bias voltage VBIAS VOUT > 1.1 V, IOUT = 1 mA VOUT + 1.4 V ― 5.5 VOUT + 1.4 V 5.5 V Input voltage VIN I OUT = 1 mA (Note 5) VOUT +

0.1 V ― V BIAS VOUT +

0.1 V VBIAS V

Adjustable voltage VADJ ― 0.490 0.500 0.510 ― ― V Line regulation Reg･line VOUT + 0.5 V ≤ VIN ≤ 5.5 V, IOUT = 1 mA ― 1 15 ― ― mV Load regulation Reg･load 0.01 A ≤ IOUT ≤ 1 A ― 2 ― ― ― mV Quiescent current IB IOUT = 0 mA, VBIAS = 2.5 V (Note 6) ― 56 72 ― 92 μA Stand-by current IBIAS (OFF) V CT = 0 V ― 0.1 ― ― 1 μA IIN(OFF) VCT = 0 V (Note 6) ― 0.8 ― ― 2 μA Control pull down current I CT ― ― 0.1 ― ― ― μA Dropout voltage VDO IOUT = 1 A, VBIAS = 3.3 V (Note 7)( Note 9) ― 92 ― ― 163 mV Under voltage lockout V UVLO V IN voltage ― 0.5 ― ― 0.65 V Temperature coefficient T CVO - 40°C < = Topr Output noise voltage VNO VBIAS = 5.5 V, VIN = VOUT + 1 V, IOUT = 10 mA, 10 Hz < = f < = 100 kHz, (Note 7) ― 52 ― ― ― μVrms Ripple rejection ratio R.R.(VIN) VBIAS = 5.5 V, VIN = VOUT + 1 V, IOUT = 10 mA, f = 1 kHz, VIN Ripple = 200 mVp-p, (Note 7) ― 90 ― ― ― dB R.R.(VBIAS) VBIAS = 5.5 V, VIN = VOUT + 1 V, IOUT = 10 mA, f = 1 kHz, VBIAS Ripple = 200 mVp-p, (Note 7) ― 50 ― ― ― dB Load transient response ⊿VOUT IOUT=0.01 A → 1 A ― - 100 ― ― ― mV IOUT=1 A → 0.01 A ― +115 ― ― ― mV Control voltage (ON) V CT (ON) ― 1.0 ― 5.5 1.0 5.5 V Control voltage (OFF) V CT (OFF) ― 0 ― 0.4 0 0.4 V Output discharge on resistance RSD ― ― 20 ― ― ― Ω

6 © 2017 - 2018 Toshiba Electronic Devices & Storage Corporation tON tOFF Characteristics (Ta = 25°C) VOUT = 1.0 V Characteristics Symbol Test Condition (Figure 1) Min Typ. Max Unit Turn on delay tON VIN = 1.235 V , VBIAS = 3.3 V , IOUT = No Load CIN = 4.7 μF, CBIAS = 1.0 μF, COUT = 4.7 μF ― 135 ― μs Turn off delay tOFF VIN = 1.235 V , VBIAS = 3.3 V , IOUT = No Load CIN = 4.7 μF, CBIAS = 1.0 μF, COUT = 4.7 μF ― 230 ― μs Figure 1 t ON, tOFF Waveforms VIH VOUT VCT VOL VOH VIL 10% tON tOFF 10% 90% 90%

7 © 2017 - 2018 Toshiba Electronic Devices & Storage Corporation Application Note 1. Example of Application Circuit The figure above shows the recommended configuration for using a Low -Dropout regulator. Please connect over 4.7μF capacitor at V IN and V OUT pins, and over 1μF capacitor at V BIAS pin, as close as possible to each pins for stable input/output operation. (Ceramic capacitors can be used) . But simple usage of large input capacitance is known to form unwanted LC resonance in combination with input wire inductance. So please check parameter with the actual device and circuit. CFB is optional capacitance that improve Transient response, Output noise, Oscillation resistance, PSRR and Overshoot. However, it does not necessarily need. VADJ is the output voltage control pin. Typical V ADJ value is 0.5 V. For best performance R1 and R2 should have similar temperature coefficients, otherwise output voltage accuracy will be compromised. 𝑉𝑉𝑂𝑂𝑂𝑂𝑂𝑂 = 𝑉𝑉𝐴𝐴𝐴𝐴𝐴𝐴 × 1 + 𝑅𝑅1 𝑅𝑅2 Reference resistance table This is reference data. Please check parameter with the actual device and circuit. Output voltage (typ.) R1 R2

0.6 V 4 kΩ 20 kΩ

0.7 V 8 kΩ 20 kΩ

0.8 V 12 kΩ 20 kΩ

0.9 V 16 kΩ 20 kΩ

1.0 V 20 kΩ 20 kΩ

1.1 V 24 kΩ 20 kΩ

1.2 V 28 kΩ 20 kΩ

1.3 V 32 kΩ 20 kΩ

1.8 V 52 kΩ 20 kΩ

3.6 V 124 kΩ 20 kΩ

4.7 μF 1.0 μF VBIAS CONTROL LOAD 4.7 μF VADJ VBIAS (CFB = 10 nF)

8 © 2017 - 2018 Toshiba Electronic Devices & Storage Corporation 2. Power Dissipation Board-mounted power dissipation ratings for TCR13AGADJ is available in the Absolute Maximum Ratings table. Power dissipation is measured on the board condition shown below. [The Board Condition] Board material: Glass epoxy (FR4) Board dimension: 40 mm x 40 mm (4 layer), t = 1.8 mm Metal pattern ratio: approximately 70 % each layer, Please allow sufficient margin when designing a board pattern to fit the expected power dissipation. Also take into consideration the ambient temperature, input voltage, output current etc. and applying the appropriate derating for allowable power dissipation during operation. PD – Ta (WCSP6F) Ambient temperature Ta ( °C) Power dissipation PD (mW) -40 120 400 800 1200 1600 2000

9 © 2017 - 2018 Toshiba Electronic Devices & Storage Corporation Attention in Use

• Capacitors(Output, Input, and Bias Capacitor) Ceramic capacitors can be used for these devices. However, because of the type of the capacitors, there might be unexpected thermal features. Please consider application condition for selecting capacitors. For stable operation, please use over 4.7 μF input capacitor, 1.0 μF bias capacitor and 4.7 μF output ceramic capacitor.
• Mounting The long distance between IC and each capacitor might affect phase compensation by impedance in wire and inductor. For stable power supply, output capacitor need to mount near IC as much as possible. Also V IN and GND pattern need to be large and make the wire impedance small as possible.
• Permissible Loss Please have enough design patterns for expected maximum permissible loss. And under consideration of ambient temperature, input voltage, and output current etc, we recommend proper dissipation ratings for maximum permissible loss; in general maximum dissipation rating is 70 to 80 percent.
• Overcurrent Protection and Thermal shutdown Overcurrent protection and Thermal shutdown are designed in these products, but these are not designed to constantly ensure the suppression of the device within operation limits. Depending on the condition during actual usage, it could affect the electrical characteristic specification and reliability. Also note that if output pins and GND pins are not completely shorted out, these products might break down. When using these products, please read through and understand the concept of dissipation for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute m aximum ratings in any condition. Furthermore, Toshiba recommends inserting failsafe system into the design.
• Adjustable output voltage type TCR13AGADJ is adjustable output voltage type. V ADJ is the output voltage control pin, please refer to example of application circuit and reference resistance table. Please select the tolerance of the resistance value in accordance by the system. In addition, please assemble R1 and R2 to minimize common impedance. For VADJ assembly, please design PCB pattern as short as possible to avoid noise effect.

10 © 2017 - 2018 Toshiba Electronic Devices & Storage Corporation Representative Typical Characteristics Output voltage vs. Input voltage Input voltage VIN (V) Output voltage V OUT (V) VOUT = 0.55 V Input voltage VIN (V) Output voltage V OUT (V) VOUT = 0.9 V Input voltage V IN (V) Output voltage V OUT (V) VOUT = 3.6 V 0.5 0 1 2 3 4 5 IOUT = 1 mA IOUT = 700 mA IOUT = 1000 mA 0.5 1.5 0 1 2 3 4 5 IOUT = 1 mA IOUT = 700 mA IOUT = 1000 mA 0 1 2 3 4 5 IOUT = 1 mA IOUT = 700 mA IOUT = 1000 mA VBIAS = 3.3 V, VIN = 1.55 V, CIN = COUT = 4.7 μF, CBIAS = 1.0 μF VBIAS = 3.3 V, VIN = 1.9 V, CIN = COUT = 4.7 μF, CBIAS = 1.0 μF VBIAS = 5.5 V, VIN = 4.6 V, CIN = COUT = 4.7 μF, CBIAS = 1.0 μF Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

11 © 2017 - 2018 Toshiba Electronic Devices & Storage Corporation Representative Typical Characteristics Output voltage vs. Output current 0.8 0.9 0 0.2 0.4 0.6 0.8 1 Output voltage V OUT (V) VOUT = 0.55 V Output current IOUT (A) Output voltage V OUT (V) VOUT = 0.9 V Output current I OUT (A) Output voltage V OUT (V) VOUT = 3.6 V Output current IOUT (A) 0.45 0.55 0.65 0 0.2 0.4 0.6 0.8 1 3.5 3.6 3.7 0 0.2 0.4 0.6 0.8 1 VIN = 1.05 V, VBIAS = 5.5 V CIN = COUT = 4.7 μF, CBIAS = 1.0 μF VIN = 1.4 V, VBIAS = 5.5 V CIN = COUT = 4.7 μF, CBIAS = 1.0 μF VIN = 4.1 V, VBIAS = 5.5 V CIN = COUT = 4.7 μF, CBIAS = 1.0 μF Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

12 © 2017 - 2018 Toshiba Electronic Devices & Storage Corporation Representative Typical Characteristics Dropout voltage vs. Output current Dropout voltage V DO (V) Output current IOUT (A) Dropout voltage V DO (V) Output current I OUT (A) VOUT = 3.6 V 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0 0.2 0.4 0.6 0.8 1 VBIAS = 2.5 V VBIAS = 5.5V VBIAS = 3.3 V VOUT = 0.9 V 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0 0.2 0.4 0.6 0.8 1 VBIAS = 5 V VBIAS = 5.5V CIN = 4.7 μF, CBIAS = 1 μF, COUT = 4.7 μF CIN = 4.7 μF, CBIAS = 1 μF, COUT = 4.7 μF Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

13 © 2017 - 2018 Toshiba Electronic Devices & Storage Corporation Representative Typical Characteristics Quiescent current vs. Input voltage VOUT = 0.55 V VOUT = 0.9 V Quiescent current I B ( μA) 100 2 2.5 3 3.5 4 4.5 5 5.5 100 2.5 3 3.5 4 4.5 5 5.5 Quiescent current I B (μA) Bias voltage VBIAS (V) CIN = 4.7μF, CBIAS = 1 μF, COUT = 4.7 μF CIN = 4.7μF, CBIAS = 1 μF, COUT = 4.7 μF Bias voltage VBIAS (V) Quiescent current I B (μA) 100 VOUT = 3.6 V CIN = 4.7μF, CBIAS = 1 μF, COUT = 4.7 μF Bias voltage VBIAS (V) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

14 © 2017 - 2018 Toshiba Electronic Devices & Storage Corporation Representative Typical Characteristics Ripple rejection ratio vs. Frequency 100 10 100 1000 10000 100000 1000000 100 10 100 1000 10000 100000 1000000 100 10 100 1000 10000 100000 1000000 VOUT = 0.55 V Ripple rejection ratio (dB) Frequency f (Hz) VOUT = 0.9 V Ripple rejection ratio (dB) Frequency f ( Hz) VBIAS = 5.5 V , VIN = 1.55 V, VIN ripple = 200 mVp−p CIN = none, COUT = 4.7 μF IOUT = 10 mA, Ta = 25°C VOUT = 3.6 V Ripple rejection ratio (dB) Frequency f (Hz) VBIAS = 5.5 V , VIN = 1.9 V, VIN ripple = 200 mVp−p CIN = none, COUT = 4.7 μF IOUT = 10 mA, Ta = 25°C VBIAS = 5.5 V , VIN = 4.6 V, VIN ripple = 200 mVp−p CIN = none, COUT = 4.7 μF IOUT = 10 mA, Ta = 25°C Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

15 © 2017 - 2018 Toshiba Electronic Devices & Storage Corporation Output voltage vs. Output current (Simulation data) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 1 1.5 2 2.5 3 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1 1.5 2 2.5 3 VOUT = 0.9 V Output voltage VOUT (V) Output current I OUT (A) VOUT = 3.6 V Output voltage VOUT (V) Output current I OUT (A) Pulse width = 1 ms Pulse width = 1 ms Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

16 © 2017 - 2018 Toshiba Electronic Devices & Storage Corporation Load transient response Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. VBIAS = 3.3 V, VIN = 1.9 V, CIN = COUT = 4.7 μF, CBIAS = 1.0 μF VBIAS = 3.3 V, VIN = 1.9 V, CIN = COUT = 4.7 μF, CBIAS = 1.0 μF VOUT = 0.9 V (IOUT = 1 mA ⇔ 1 A) 1.0 0.9 1.0 Time t (100 μs/div) Output current IOUT ( A) Output voltage ⊿VOUT (V) 1.0 0.9 0.8 Output current IOUT ( A) Time t (20 μs/div) VOUT = 0.9 V (IOUT = 1 mA ⇔ 1 A) VBIAS = 5 V, VIN = 4.6 V, CIN = COUT = 4.7 μF, CBIAS = 1.0 μF VBIAS = 5 V, VIN = 4.6 V, CIN = COUT = 4.7 μF, CBIAS = 1.0 μF VOUT = 3.6 V (IOUT = 1 mA ⇔ 1 A) 1.0 3.6 3.7 3.5 Time t (100 μs/div) Output current IOUT ( A) Output voltage ⊿VOUT (V) 1.0 3.6 3.5 Output current IOUT ( A) Output voltage ⊿VOUT (V) Time t (20 μs/div) VOUT = 3.6 V (IOUT = 1 mA ⇔ 1 A) 0.8 Output voltage ⊿VOUT (V)

17 © 2017 - 2018 Toshiba Electronic Devices & Storage Corporation tON Response IOUT = 0 A IOUT = 1.0 A IOUT = 0 A IOUT = 1.0 A IOUT = 0 A IOUT = 1.0 AIOUT = 0 A IOUT = 1.0 A VOUT = 0.55 V VCT (V) 1.0 VOUT (V) Time t (100 μs/div) 0.5 1.0 IOUT (A) IOUT = 0 A IOUT = 1.0 AIOUT = 0 A IOUT = 1.0 A VOUT = 0.9 V VCT (V) VOUT (V) Time t ( 100 μs/div) IOUT (A) 1.0 1.0 1.0 VOUT = 3.6 V VCT (V) 1.0 VOUT (V) Time t ( 100 μs/div) 2.0 1.0 IOUT (A) VBIAS = 3.3 V, VIN = 1.55 V, CIN = COUT = 4.7 μF, CBIAS = 1.0 μF VBIAS = 3.3 V, VIN = 1.9 V, CIN = COUT = 4.7 μF, CBIAS = 1.0 μF VBIAS = 5 V, VIN = 4.6 V, CIN = COUT = 4.7 μF, CBIAS = 1.0 μF Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

18 © 2017 - 2018 Toshiba Electronic Devices & Storage Corporation tOFF Response IOUT = 0 A IOUT = 1.0 A IOUT = 0 A IOUT = 1.0 A IOUT = 0 A IOUT = 1.0 A IOUT = 0 A IOUT = 1.0 A VOUT = 3.6 V IOUT = 0 A IOUT = 1.0 A IOUT = 0 A IOUT = 1.0 A VOUT = 0.55 V VCT (V) 1.0 VOUT (V) Time t (100 μs/div) 0.5 1.0 IOUT (A) VOUT = 0.9 V VCT (V) VOUT (V) Time t ( 100 μs/div) IOUT (A) 1.0 1.0 1.0 VCT (V) 1.0 VOUT (V) Time t ( 100 μs/div) 2.0 1.0 IOUT (A) VBIAS = 3.3 V, VIN = 1.55 V, CIN = COUT = 4.7 μF, CBIAS = 1.0 μF VBIAS = 3.3 V, VIN = 1.9 V, CIN = COUT = 4.7 μF, CBIAS = 1.0 μF VBIAS = 5 V, VIN = 4.6 V, CIN = COUT = 4.7 μF, CBIAS = 1.0 μF Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

19 © 2017 - 2018 Toshiba Electronic Devices & Storage Corporation Package Dimensions WCSP6F Unit: mm Weight : 0.61 mg ( typ.)

20 © 2017 - 2018 Toshiba Electronic Devices & Storage Corporation WCSP6F Unit: mm Land pattern dimensions for reference only 0.4 0.4 0.26

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