TCMTZJ2V0 TAK_CHEONG | Alldatasheet

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Number: DB-054 July 2008 / C Pa ge 1 SEMICONDUCTOR TAK CHEONG 500 mW DO-34 Hermetically Sealed Glass Zener Voltage Regulators Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter Value Units Power Dissipation 500 mW Storage Temperature Range -65 to +175 °C Operating Junction Temperature +175 °C Lead Temperature (1/16” from case for 10 seconds) 230 °C These ratings are limiting values above which the serviceability of the diode may be impaired. Specification Features: ƒ Zener Voltage Range 2.0 to 39 Volts ƒ DO-34 Package (JEDEC DO-204) ƒ Through-Hole Device Type Mounting ƒ Hermetically Sealed Glass ƒ Compression Bonded Construction ƒ All External Surfaces Are Corrosion Resistant And Lads Are Readily Solderable ƒ RoHS Compliant ƒ Solder Hot Dip Tin (Sn) Terminal Finish ƒ Cathode Indicated By Polarity Band

Electrical Characteristics

TA = 25°C unless otherwise noted VZ@IZT Device Type T Tolerance Min Nom Max Izt (mA) Zzt@Izt (Ohms) Max Zzk@Izk (Ohms) Max Izk (mA) IR @VR (uA) Max VR (V) A 3.0% 4.040 4.165 4.290 B 3.0% 4.170 4.300 4.430TCMTZJ4V3 C 3.0% 4.300 4.435 4.570 5 100 1000 1 5 1.0 TCMTZJ2V0 through TCMTZJ39V Cathode Anode ELECTRICAL SYMBOL AXIAL LEAD DO34 L =Tak Cheong Logo xxx =Device Code TCMTZJxxx T (tolerance) =A, B, C or D Band color =Black DEVICE MARKING DIAGRAM L xxx T

Number: DB-054 July 2008 / C Pa ge 2 SEMICONDUCTOR TAK CHEONG Electrical Characteristics TA = 25°C unless otherwise noted VZ@Izt Device Type T Tolerance Min Nom Max Izt (mA) Zzt@Izt (Ohms) Max Zzk@Izk (Ohms) Max Izk (mA) IR@VR (uA) Max VR (V) A 2.6% 4.44 4.56 4.68 B 2.8% 4.55 4.68 4.80 TCMTZJ4V7 C 2.7% 4.68 4.81 4.93 5 80 900 1 5 1.0 A 2.6% 4.81 4.94 5.07 B 2.6% 4.94 5.07 5.20 TCMTZJ5V1 C 2.7% 5.09 5.23 5.37 5 80 800 1 5 1.5 A 2.4% 5.28 5.41 5.55 B 2.5% 5.45 5.59 5.73 TCMTZJ5V6 C 2.6% 5.61 5.76 5.91 5 60 500 1 5 2.5 A 2.7% 5.78 5.94 6.09 B 2.6% 5.96 6.12 6.27 TCMTZJ6V2 C 2.5% 6.12 6.28 6.44 5 60 300 1 5 3.0 A 2.6% 6.29 6.46 6.63 B 2.6% 6.49 6.66 6.83 TCMTZJ6V8 C 2.6% 6.66 6.84 7.01 5 20 150 0.5 2 3.5 A 2.7% 6.85 7.04 7.22 B 2.6% 7.07 7.26 7.45 TCMTZJ7V5 C 2.5% 7.29 7.48 7.67 5 20 120 0.5 0.5 4.0 A 2.6% 7.53 7.73 7.92 B 2.6% 7.78 7.99 8.19 TCMTZJ8V2 C 2.5% 8.03 8.24 8.45 5 20 120 0.5 0.5 5.0 A 2.6% 8.29 8.51 8.73 B 2.5% 8.57 8.79 9.01 TCMTZJ9V1 C 2.6% 8.83 9.07 9.30 5 25 120 0.5 0.5 6.0 A 2.6% 9.12 9.36 9.59 B 2.6% 9.41 9.66 9.90 C 2.5% 9.70 9.95 10.20TCMTZJ10V D 2.5% 9.94 10.19 10.44 5 30 120 0.5 0.2 7.0 A 2.6% 10.18 10.45 10.71 B 2.6% 10.50 10.78 11.05TCMTZJ11V C 2.5% 10.82 11.10 11.38 5 30 120 0.5 0.2 8.0 A 2.5% 11.13 11.42 11.71 B 2.6% 11.44 11.74 12.03TCMTZJ12V C 2.6% 11.74 12.05 12.35 5 30 110 0.5 0.2 9.0 A 2.6% 12.11 12.43 12.75 B 2.6% 12.55 12.88 13.21TCMTZJ13V C 2.6% 12.99 13.33 13.66 5 35 110 0.5 0.2 10 A 2.5% 13.44 13.79 14.13 B 2.6% 13.89 14.26 14.62TCMTZJ15V C 2.5% 14.35 14.72 15.09 5 40 110 0.5 0.2 11 A 2.6% 14.80 15.19 15.57 B 2.6% 15.25 15.65 16.04TCMTZJ16V C 2.5% 15.69 16.10 16.51 5 40 150 0.5 0.2 12 A 2.5% 16.22 16.64 17.06 B 2.5% 16.82 17.26 17.70TCMTZJ18V C 2.6% 17.42 17.88 18.33 5 45 150 0.5 0.2 13 A 2.5% 18.02 18.49 18.96 B 2.5% 18.63 19.11 19.59 C 2.5% 19.23 19.73 20.22TCMTZJ20V D 2.5% 19.72 20.22 20.72 5 55 200 0.5 0.2 15

Number: DB-054 July 2008 / C Pa ge 3 SEMICONDUCTOR TAK CHEONG Electrical Characteristics TA = 25°C unless otherwise noted VZ@Izt Device Type T Tolerance Min Nom Max Izt (mA) Zzt@Izt (Ohms) Max Zzk@Izk (Ohms) Max Izk (mA) IR@VR (uA) Max VR (V) A 2.2% 20.15 20.68 21.20 B 2.5% 20.64 21.18 21.71 C 2.5% 21.08 21.63 22.17TCMTZJ22V D 2.5% 21.52 22.08 22.63 5 30 200 0.5 0.2 17 A 2.5% 22.05 22.62 23.18 B 2.5% 22.61 23.19 23.77 C 2.5% 23.12 23.72 24.31TCMTZJ24V D 2.5% 23.63 24.24 24.85 5 35 200 0.5 0.2 19 A 2.5% 24.26 24.89 25.52 B 2.5% 24.97 25.62 26.26 C 2.5% 25.63 26.29 26.95TCMTZJ27V D 2.5% 26.29 26.97 27.64 5 45 250 0.5 0.2 21 A 2.5% 26.99 27.69 28.39 B 2.5% 27.70 28.42 29.13 C 2.5% 28.36 29.09 29.82TCMTZJ30V D 2.5% 29.02 29.77 30.51 5 55 250 0.5 0.2 23 A 2.5% 29.68 30.45 31.22 B 2.5% 30.32 31.10 31.88 C 2.5% 30.90 31.70 32.50TCMTZJ33V D 2.5% 31.49 32.30 33.11 5 65 250 0.5 0.2 25 A 2.5% 32.14 32.97 33.79 B 2.5% 32.79 33.64 34.49 C 2.5% 33.40 34.27 35.13TCMTZJ36V D 2.5% 34.01 34.89 35.77 5 75 250 0.5 0.2 27 A 2.5% 34.68 35.58 36.47 B 2.5% 35.36 36.28 37.19 C 2.5% 36.00 36.93 37.85TCMTZJ39V D 2.5% 36.63 37.58 38.52 5 85 250 0.5 0.2 30 VF (forward voltage) = 1.2 V maximum @ IF = 200mA for all types Note: 1. The zener voltage subdivision (VZ) is measured 40mS after diode is powered up. 2. The operating resistance (Zzt and Zzk) is measured by superimposing a minute alternation current in the regulated current (Iz). 3. When ordering, please specify tolerance A, B, C or D.

Number: DB-054 July 2008 / C Pa ge 5 SEMICONDUCTOR TAK CHEONG Package Outline Package Case Outline DO-34 DO-34 Millimeters Inches Dimension Min Max Min Max A 0.46 0.55 0.018 .0022 B 2.16 3.04 0.085 0.120 C 25.40 38.10 1.000 1.500 D 1.27 1.90 0.050 0.075 Note: 1.0 All dimensions are within JEDEC standard. 2.0 DO-34 polarity denoted by cathode band.

Number: DB-100 April 14, 2008 / A DISCLAIMER NOTICE TAK CHEONG NOTICE The information presented in this document is for reference only. Tak Cheong reserves the right to make changes without notice for the specification of the products displayed herein. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controlle rs and other safety devices), Tak Cheong Semiconductor Co., Ltd., or anyone on its behalf, assumes no responsi bility or liability for any damagers resulting from such improper use of sale. This publication supersedes & replaces all information reviously supplied. For additional information, please visit our website http://www.takcheong.com , or consult your nearest Tak Cheong’s sales office for further assistance.