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TCK401G, TCK402G 2019-12-13 1 © 2017-2019 Toshiba Electronic Devices & Storage Corporation TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCK401G, TCK402G External FET Driver IC The TCK401G and TCK402G are 28 V high input voltage External FET driver ICs. They have wide input voltage range. And they feature a slew rate control driver with small package WCSP6E (0.8 mm x 1.2 mm, t: 0.55 mm). Also they can block reverse current if switch turned of f by using external series FET. Thus they are suitable for power management selector such as Battery Charge application. Feature High maximum input voltage: VIN max = 40 V Wide input voltage range: VIN = 2.7 to 28 V Auto output discharge Charge pump circuit Inrush current reducing circuit. Over voltage lock out (Over 28 V) Under voltage lock out (Under 2.7 V) Reverse current protection by External Back to Back MOSFET Top marking (Top view) Start of commercial production 2017-10 1 2 A B C 401 A1: VGATE B1: VSRC C1: DIS A2: VIN B2: GND C2: VCT 401: TCK401G 402: TCK402G Weight: 1 mg(typ.)
TCK401G, TCK402G 2019-12-13 2 © 2017-2019 Toshiba Electronic Devices & Storage Corporation
- Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN -0.3 to 40 V Control voltage VCT -0.3 to 6 V Output GATE voltage VGATE -0.3 to VIN_opr + VGS V SRC voltage VSRC -0.3 to VGATE V DIS voltage VDIS -0.3 to 40 V Power dissipation PD 800 (Note 1) mW Operating temperature range Topr −40 to 85 °C Junction temperature Tj 150 °C Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board: FR4 board. ( 40 mm × 40 mm × 1.6 mm, Cu 4 layer )
- Operating Conditions Characteristics Symbol Min. Typ. Max. Unit Input operation voltage VIN _opr 2.7 5.0 28 V Capacitance CIN 0.1 1 µF CGATE 2000 pF CONTROL High-level input voltage VIH 1.6 V CONTROL Low-level input voltage VIL 0.4 V
TCK401G, TCK402G 2019-12-13 3 © 2017-2019 Toshiba Electronic Devices & Storage Corporation
- Pin Assignment (Top view)
- WCSP6E
- Product list Part number VCT function VCT resistance TCK401G Active High Pull down TCK402G Active Low Pull down
- Block Diagram Pin # Name Pin # Name A1 VGATE A2 VIN B1 VSRC B2 GND C1 DIS C2 VCT 1 2 A B C
TCK401G, TCK402G 2019-12-13 4 © 2017-2019 Toshiba Electronic Devices & Storage Corporation TCK401G PIN Description PIN Name Description A1 VGATE Gate-Driver Output. A2 VIN Supply voltage input. B1 VSRC Recommend connecting V SRC terminal to the common source connection of the external MOSFETs. B2 GND Ground C1 DIS Output Discharge terminal. C2 VCT Mode control input terminal. When V CT=High turn the external MOSFETs on, VCT=Low, turn the external MOSFETs off.
- TCK402G PIN Description PIN Name Description A1 VGATE Gate-Driver Output. A2 VIN Supply voltage input. B1 VSRC Recommend connecting V SRC terminal to the common source connection of the external MOSFETs. B2 GND Ground C1 DIS Output Discharge terminal. C2 VCT Mode control input terminal. When V CT=Low turn the external MOSFETs on, VCT=High, turn the external MOSFETs off. TCK401G Operation Status Table 2.7V ≤ VIN ≤ 28 V (Ta = -40 to 85°C) TCK402G Operation Status Table 2.7V ≤ VIN ≤ 28 V (Ta = -40 to 85°C) VCT VGATE Discharge Q1 comment High ON （VIN + VGS） OFF Driver ON mode Open OFF ON Driver OFF mode Low VCT VGATE Discharge Q1 comment Low ON （VIN + VGS） OFF Driver ON mode Open High OFF ON Driver OFF mode
TCK401G, TCK402G 2019-12-13 5 © 2017-2019 Toshiba Electronic Devices & Storage Corporation DC Characteristics (Ta = -40 to 85°C) Characteristics Symbol Test Condition Ta = 25℃ Ta = −40 to 85℃ (Note 2) Unit Min. Typ. Max. Min Max Input quiescent current (ON state) IQ(ON) TCK401G VCT: High, VIN = 5.0 V 121 222 µA VCT: High, VIN = 9.0 V 144 283 µA VCT: High, VIN = 12 V 159 294 µA VCT: High, VIN = 20 V 198 376 µA TCK402G VCT: Low, VIN = 5.0 V 121 222 µA VCT: Low, VIN = 9.0 V 144 283 µA VCT: Low, VIN = 12 V 159 294 µA VCT: Low, VIN = 20 V 198 376 µA Standby current (OFF state) IQ(OFF) TCK401G VCT: Low, VIN = 5.0 V 3.0 4.8 µA VCT: Low, VIN = 9.0 V 5.9 8.2 µA VCT: Low, VIN = 12 V 8.0 11.2 µA VCT: Low, VIN = 20 V 13.8 19.2 µA TCK402G VCT: High, VIN = 5.0 V 3.0 4.8 µA VCT: High, VIN = 9.0 V 5.9 8.2 µA VCT: High, VIN = 12 V 8.0 11.2 µA VCT: High, VIN = 20 V 13.8 19.2 µA GATE Drive voltage(VGATE-VIN) VGS VIN = 3 V 4.0 2.8 5.1 V VIN = 5 V 6.5 5.1 7.9 V VIN = 9.0 V 6.5 5.1 7.9 V 12 V ≤ VIN ≤ 28 V 8.5 6.9 10.0 V Output current IGATE(ON) VIN = 5 V 38 µA DIS resistance RDIS 21 kΩ Control pull down resistance RCT VCT= 5 V 600 kΩ Note 2: This parameter is warranted by design.
TCK401G, TCK402G 2019-12-13 6 © 2017-2019 Toshiba Electronic Devices & Storage Corporation
- AC Characteristics (Ta = 25°C, VIN = 5 V, CGATE = 2000 pF) Characteristics Symbol Test Condition (Figure 1,2) Min. Typ. Max. Unit VGATE ON time tON Initial startup time of VGATE (Note 3) voltage from 0 V to VIN +1 V 0.58 0.8 ms VGATE OFF time tOFF VGATE = 0.5 V 16.6 µs VGATE rise time tr VGATE rising from VIN +1 V to VIN +3 V 0.2 ms VGATE fall time tf VGATE falling from VIN +3 V to VIN +1 V 1.5 µs Note 3: This parameter is warranted by design.
- AC Characteristics (Ta = 25°C, VIN = 9 V, CGATE = 2000 pF) Characteristics Symbol Test Condition (Figure 1,2) Min. Typ. Max. Unit VGATE ON time tON Initial startup time of VGATE (Note 4) voltage from 0 V to VIN +1 V 0.78 1.0 ms VGATE OFF time tOFF VGATE = 0.5 V 19.7 µs VGATE rise time tr VGATE rising from VIN +1 V to VIN +4 V 0.35 ms VGATE fall time tf VGATE falling from VIN +4 V to VIN +1 V 1.6 µs Note 4: This parameter is warranted by design.
- AC Characteristics (Ta = 25°C, VIN = 12 V, CGATE = 2000 pF) Characteristics Symbol Test Condition (Figure 1,2) Min. Typ. Max. Unit VGATE ON time tON Initial startup time of VGATE (Note 5) voltage from 0 V to VIN +1 V 0.92 1.2 ms VGATE OFF time tOFF VGATE = 0.5 V 21.3 µs VGATE rise time tr VGATE rising from VIN +1 V to VIN +5 V 0.6 ms VGATE fall time tf VGATE falling from VIN +5 V to VIN +1 V 1.7 µs Note 5: This parameter is warranted by design.
TCK401G, TCK402G 2019-12-13 7 © 2017-2019 Toshiba Electronic Devices & Storage Corporation Timing chart VGATE VIN + 3 V for VIN = 5 V VIN + 4 V for VIN = 9 V VIN + 5 V for VIN = 12 V tr tf tON tOFF CNT VIH VIL 50% Fig.1 Active High (TCK401G) VIN + 1V 50% 0.5V VCT VGATE VIN + 3 V for VIN = 5 V VIN + 4 V for VIN = 9 V VIN + 5 V for VIN = 12 V tr tf tON tOFF CNT VIH VIL 50% Fig.2 Active Low (TCK402G) VIN + 1V 50% 0.5V VCT
TCK401G, TCK402G 2019-12-13 8 © 2017-2019 Toshiba Electronic Devices & Storage Corporation
- Application Note
- Application circuit example 1) Input and Output capacitor An input capacitor (CIN) and an output capacitor ( COUT) are recommended for the stable operation of TCK401G and TCK402G. And it is effective to reduce voltage overshoot or undershoot due to sharp changes in output current and also for improved stability of the power supply. When used, place C IN and COUT more than 1.0μF as close to TCK40xG to improve stability of the power supply. 2) VCT pin VCT pin for TCK401G and TCK402G is operated by the control voltage and has Schmitt trigger. VCT pin has a tolerant function such that it can be used even if the control voltage is higher than the input voltage. 3) VSRC Pin For Dual MOSFET Driver, VSRC works to short between VGATE and MOSFET source when Driver IC turn off. If there are enough margins of VGS of MOSFET, VSRC terminal Open state is no problem. For Single MOSFET Driver, if there is enough margin of VGS of MOSFET, VSRC pin Open state is no problem. If there are not enough margins, we recommend connecting VSRC and VOUT. If connect VSRC and VOUT, tOFF time become longer because of COUT. Therefore, please consider enough margins for MOSFET selection. 4) DIS Pin If discharge function is needed when Driver IC turns off, please connect DIS Pin to VOUT. If no need, DIS Pin Open state is no problem. 5) Over Voltage Protection off time (tOVP) Over Voltage (VIN is over VIN_opr max) Protection off time (tOVP) is similar to VGATE OFF time (tOFF). Timing chart VGATE tOVP CNT VIN_opr max VIN Fig.3 tOVP
TCK401G, TCK402G 2019-12-13 9 © 2017-2019 Toshiba Electronic Devices & Storage Corporation Representative Typical Characteristics IQ(ON) - VIN IQ(OFF) - VIN VGATE - VIN IGATE(ON) - Ta tON - Ta tOFF - Ta
TCK401G, TCK402G 2019-12-13 10 © 2017-2019 Toshiba Electronic Devices & Storage Corporation tON Response（VIN=5V） (TCK401G) tON Response（VIN=12V） (TCK401G) tOFF Response（VIN=5V） (TCK401G) tOFF Response（VIN=12V） (TCK401G) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.
TCK401G, TCK402G 2019-12-13 11 © 2017-2019 Toshiba Electronic Devices & Storage Corporation
- Package dimension Weight: 1 mg (typ.) Unit: mm
TCK401G, TCK402G 2019-12-13 12 © 2017-2019 Toshiba Electronic Devices & Storage Corporation Land pattern dimensions (for reference only) Unit： mm
TCK401G, TCK402G 2019-12-13 13 © 2017-2019 Toshiba Electronic Devices & Storage Corporation RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”.
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