TCK301G

TCK301G TOSHIBA | Alldatasheet

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TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCK301G, TCK302G, TCK303G

28 V, Single input – Single Output Load Switch IC

with Over Voltage Protection The TCK30 series are 28 V high input voltage Single Inputs －Single Output load switch ICs. It has Over Voltage Protection function featuring low switch ON resistance, high output current and wide input voltage operation. Switch ON resistance is only 73 m Ω at 4.5 V, - 1.0 A load conditions. And these feature a slew rate control driver, thermal shutdown and F LAG function. Also it can block reverse current if switch turned off. Output current is available up to 3 A. Thus this is suitable for power management such as Battery Charge application. This device is available in 0.5mm pitch ultra small package WCSP9 portable applications that require high- density board assembly such as cellular phone. Feature

• High input voltage: VIN (Max) = 28 V
• High output current: IOUT (DC) = 3.0 A
• L ow ON resistance : RON = 73 mΩ (Typ.) at VIN = 4.5 V, IOUT = - 1.0 A
• Over Voltage Lockout : 6.6 V, 10.5 V, and 15.5 V (Typ.)
• Under Voltage Lockout: 2.9 V (Typ.)
• FLAG indicates
• I nternal 15 ms startup hold
• Reverse current blocking (SW OFF state)
• Inrush current reducing circuit
• Thermal Shutdown function Top marking WCSP9 Weight: 3.5 mg (Typ.) A1 Index 301: TCK301G 302: TCK302G 303: TCK303G Start of commercial production 2015-05

Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN -0.3 to 30 V Control voltage VCT, VCE -0.3 to 6 V Output voltage VOUT -0.3 to 18 V Flag voltage VFLAG -0.3 to 6 V Output current IOUT DC 3.0 A Pulse 4.0 (Note 1) Power dissipation PD 1.65 (Note 2) W Operating temperature range Topr −40 to 85 °C Junction temperature Tj 150 °C Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: 1 ms pulse, 1% duty cycle Note2: Rating at mounting on a board: FR4 board. ( 40 mm × 40 mm × 1.6 mm, Cu 4 layer ) Pin Assignment (Top view/Bottom bump) Product list Part number Over voltage lockout CE function VCT function VCT resistance TCK301G 6.6 V (Typ.) Active Low Active High Pull up TCK302G 10.5 V (Typ.) Active Low Active High Pull up TCK303G 15.5 V (Typ.) Active Low Active High Pull up Please ask your local retailer about the devices with other OVLO, logic function and pull up resistance. 1 2 A B C 1 2 3 A FLAG VCT CE B VIN GND VOUT C VIN GND VOUT

A1 FLAG Open drain acknowledge signal output. When input voltage is in regular range (V UVL < VIN < VOVL), Q2 turn ON. FLAG output turn to be high impedance in irregular input voltage range, CE High state and thermal shutdown operation. A2 VCT Switch Control function. It is internally connected to VOP (Pull up). A3 CE Chip Enable function. It is internally connected to GND(Pull down). B1, C1 VIN Input. It has Over Voltage Lock Out (OVLO) and Under Voltage Lock Out function (UVLO). B2, C2 GND Ground B3, C3 VOUT Output Operation Logic Table TCK301G, TCK302G, TCK303G CE “Low” CE “ High” VCT “HIGH Q1 (Main Switch) ON OFF Q2 (FLAG out) ON (When VUVL < VIN < VOVL), OFF (When VUVL > VIN, or VIN > VOVL), OFF (Thermal shut down = active) OFF Reverse current block Disable Active VCT “LOW” Q1 (Main Switch) OFF OFF Q2 (FLAG out) ON (When VUVL < VIN < VOVL), OFF (When VUVL > VIN, or VIN > VOVL), OFF (Thermal shut down = active) OFF Reverse current block Active Active VIN VOUT VIN VOUT Control Logic Thermal Shutdown Reverse Current Blocking CE VCT FLAG GND GND Open Drain OVLO/ UVLO Inrush Current Reducing Charge Pump VOP

DC Characteristics (Ta = -40 to 85°C) Characteristics Symbol Test Condition Ta = 25°C Ta = −40 to 85°C Unit Min Typ. Max Min Max Input voltage VIN ― 2.3 ― 28 2.3 28 V CE,VCT High-level input voltage VIH VIN = 2.3 to 28 V 1.6 ― ― 1.6 ― V CE,VCT Low-level input voltage VIL VIN = 2.3 to 28 V ― ― 0.3 ― 0.3 V Over voltage lock out (OVLO) rising threshold VOVL_RI TCK301G ― 6.6 ― 5.9 7.3 V TCK302G ― 10.5 ― 9.1 11.9 TCK303G ― 15.5 ― 13.9 17.1 Over voltage lock out (OVLO) falling threshold VOVL_FA TCK301G ― VOVL_RI - 0.35 ― ― ― V TCK302G, TCK303G ― VOVL_RI - 0.5 ― ― ― Under voltage lock out (UVLO) rising threshold VUVL_RI ― ― 2.9 ― 2.3 3.5 V Under voltage lock out (UVLO) falling threshold VUVL_FA ― ― VUVL_RI - 0.3 ― ― ― V Quiescent current (ON state) IQ(ON) CE = Open, VCT = Open IOUT = 0 mA, VIN = 5.0 V ― 130 ― ― 190 μA Quiescent current (OFF state) IQ(OFF1) CE = 0 V, VCT = 0 V, VIN = 5.0 V, VOUT = 0 V ― 75 ― ― 115 μA Input Shutdown Current IQ(OFF2) CE = 3.0 V, VCT = Open, VIN = 5.0 V, VOUT = 0 V ― 1.3 ― ― 10 μA Switch OFF state current IOFF CE = 3.0 V, VCT = Open, VIN = Open, V OUT = 5 V ― 0.1 ― ― 1 μA Reverse blocking current IRB VOUT = 5.0 V, VIN = 0 V, VCT = 0 V ― 0.1 ― ― 10 μA On resistance RON IOUT = -1.0 A, VIN = 4.5 V ― 73 ― ― 140 mΩ FLAG Leak current ILEAK VIO = 5.0 V ― ― 2 ― 2 μA FLAG Output low voltage VOL ISINK = 1 mA, VIO = 5.0 V ― ― 0.4 ― 0.4 V CE built-in resistance RCE ― ― 530 ― ― ― kΩ VCT built-in resistance RVCT ― ― 530 ― ― ― AC Characteristics (Ta = 25°C) Characteristics Symbol Test Condition (Figure 1, 2) Min Typ. Max Unit Hold time tHD VUVL < VIN(5V) < VOVL, RL = 50 Ω Initial start up VOUT off state to charge-pump on state ― 15 ― ms VOUT OVP off time tOVP VIN >VOVLO_RI , VIN rising = 2V/μs, RL = 50 Ω, VOUT to 80% of VOVLO_RI ― 3 ― μs VOUT off time tOFF VUVL < VIN (5V) < VOVL, RL = 50 Ω, VOUT to 80% of VIN ― 2 ― μs VOUT rise time tr VIN= 5.0V , RL = 50 Ω , CL=1.0 uF ― 2 ― ms VOUT fall time tf VIN= 5.0V , RL = 50 Ω , CL=1.0 uF ― 0.12 ― ms VCT delay time (Enable to Disable) tCT1 VIN= 5.0V , RL = 50 Ω ― 0.5 ― μs VCT delay time (Disable to Enable) tCT2 VIN= 5.0V , RL = 50 Ω ― 3.2 ― ms

90% 10% 90% 10% tf tr High Low 50% tCT1 Fig.2 tr, tf, tCT tCT2 50% VCT VOUT Fig.1 tHD, tOVP, tOFF CE FLAG VIN OVLO UVLO High Low High Low High Thermal shutdown detect Thermal shutdown release tOVP tHD tHD tHD tHD tOFF Low

1. Application circuit example (top view) 1) I nput and Output capacitor An input capacitor (C IN) and an output capacitor (COUT) are necessary for the stable operation of TCK301G, TCK302G and TCK303G. And it is effective to reduce voltage overshoot or undershoot due to sharp changes in output current and also for improved stability of the power supply. When used, place C IN and COUT more than 1.0μF as close to VIN pin to improve stability of the power supply. 2) Control pin Control pins for TCK301G, TCK302G and TCK303G is operated by the control voltage and Schmitt trigger. V CT pin has a tolerant function such that it can be used even if the control voltage is higher than the input voltage. 2. Reverse current blocking Reverse current blocking (SW OFF state) function is designed in these products. This function is active at output n-ch MOSEFT turned off. However these does not assure for the suppression of uprising device operation. In use of these products, please read through and understand dissipation idea for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook ’. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba recommend inserting failsafe system into the design. 3. Thermal shut down function Thermal shutdown function is designed in these products, but these does not assure for the suppression of uprising device operation. In use of these products, please read through and understand dissipation idea for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook ’. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba recommend inserting failsafe system into the design. RL VOUT CL LOAD COUT 1.0 μF VCT RUP FLAG TCK301G TCK302G TCK303G VIN CIN 1.0 μF GND CE FLAG TCK301G TCK302G TCK303G VIN CIN 1.0 μF GND CE VCT

1. Power Dissipation Board-mounted power dissipation ratings for TCK 301G, TCK302G and TCK303G are available in the Absolute Maximum Ratings table. Power dissipation is measured on the board condition shown below. [The Board Condition] Board material: Glass epoxy (FR4) Board dimension: 40 mm x 40 mm (Cu 4 layer) Please allow sufficient margin when designing a board pattern to fit the expected power dissipation. Also take into consideration the ambient temperature, input voltage, output current etc. and applying the appropriate derating for allowable power dissipation during operation. Ambient temperature Ta ( °C) PD – Ta (WCSP9) Power dissipation PD (mW) −40 0 0 40 120 80 500 1000 1500 2000

Representative Typical Characteristics 1) O N resistance 2) Q uiescent current Input voltage V IN (V) ON resistance R ON (m Ω) 50 0 9 Input voltage V IN (V) 3 6 12 15 IOUT = -1.0 A Ta = 25°C Pulse test (TCK303G) 100 RON - VIN ON resistance R ON (m Ω) 50 0 2.0 Output current I OUT (A) 4.0 100 RON - IOUT 1.0 3.0 VIN = 4.5 V Ta = 25°C Pulse test Quiescent current IQ(ON) ( μA) 100 150 200 250 20 30 IQ(ON) - VIN Quiescent current IQ(ON) ( μA) 0 -50 50 Ambient temperature T a (°C) 100 IOUT = 0 mA VIN = 5.0 V 100 150 200 250 IQ(ON) - Ta Quiescent current IQ(OFF1) ( μA) 0 0 20 Input voltage V IN (V) 100 150 200 250 IQ(OFF1) - VIN CE, VCT = GND VOUT = 0 V (TCK303G) Ta = 25°C IOUT = 0 mA Ta = 25°C (TCK303G) 85°C -40°C Quiescent current IQ(OFF2) ( μA) 0 0 Input voltage V IN (V) IQ(OFF2) - VIN 20 30 10 85°C Ta = 25°C -40°C CE = 3.0 V VOUT = 0 V

WCSP9 Unit: mm Weight: 3.5 mg (Typ.)

Land pattern dimensions (for reference only) Unit： mm

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