TCK126BG | DigiCamel IC Datasheet

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TCK126BG TOSHIBA | Alldatasheet

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© 2021 Toshiba Electronic Devices & Storage Corporation 1 TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCK126BG 0.08 nA Ultra small IQ 1.0 A Load Switch IC in Ultra Small Package TCK126BG is load switch IC for a general power management with slew rate control driver, featuring super low quiescent current, low switch ON resistance and wide input operation voltage range from 1.0 to 5.5 V. Quiescent current is only 0.08 nA and output current is available up to 1.0 A. This device is available in 0.35 mm pitch ultra small package WCSP4 G (0.645 mm x 0.645 mm, t: 0 .465 mm max.) with back side coating that protect from external damage. Thus this device is ideal for portable applications that require high-density board assembly and ultra low power con sumption su ch as wearable s, smartphones, and IoT modules. Feature  Wide input operation voltage range: VIN = 1.0 to 5.5 V  High output current: IOUT = 1.0 A  Ultra small Quiescent current: IQ = 0.08 nA at VIN = VCT = 5.5 V, IOUT = 0 mA  Low ON resistance RON = 58 mΩ (typ.) at VIN = 3.3 V, IOUT = -0.5 A RON = 106 mΩ (typ.) at VIN = 1.8 V, IOUT = -0.5 A  Built in Slew rate control driver  Active High  Ultra small package : WCSP4G with back side coating (0.645 mm x 0.645 mm, t: 0.465 mm max.) Pin Assignment(Top view) Top marking WCSP4G Weight: 0.38 mg (typ.) Start of commercial production 2021-11 CONTROL (B2) GND (B1) VIN (A2) VOUT (A1) Index 6: TCK126BG

© 2021 Toshiba Electronic Devices & Storage Corporation 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN -0.3 to 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage VOUT -0.3 to VIN +0.3 V Output current IOUT DC 1.0 A Pulse 2.0 (Note 1) A Power dissipation PD 1.0 (Note 2) W Junction temeperature Tj 150 C Storage temperature Tstg 55 to 150 C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: 300 μs pulse, 2% duty cycle Note2: Rating at mounting on a board Glass epoxy board dimension : 40 mm x 40 mm , 4 layer Metal pattern ratio : approximately 70% each layer Block Diagram Operating conditions Characteristics Symbol Condition Min Max Unit Input voltage VIN ― 1.0 5.5 V Output current IOUT ― ― 1.0 A CONTROL High-level input voltage VIH 1.0 V ≤ VIN ≤ 5.5 V 0.9 ― V CONTROL Low-level input voltage VIL ― 0.4 V Operating Ambient temperature range Ta_opr ― -40 85 C OUT Control Logic V IN CONTROL V GND Slew Rate Control Driver Control signal High : ON Low : OFF

Electrical Characteristics

Characteristics Symbol Test Condition Ta = 25°C Ta = -40 to 85°C (Note 2) Unit Min Typ. Max Min Typ. Max Quiescent current (ON state) IQ VIN VCT = 5.5 V, IOUT = 0 mA  0.08 8  4.1 (Note 3) 100 nA Standby current (OFF state) IQ(OFF) VIN  5.5 V, VCT  0 V, VOUT = OPEN  0.08 8  4 100 nA OFF state switch current ISD(OFF) VIN  1.0 V, VCT  0 V, VOUT = 0 V  0.6     nA VIN  4.5 V, VCT  0 V, VOUT = 0 V  3   85  nA VIN  5.5 V, VCT  0 V, VOUT = 0 V  13 45  144 520 nA On resistance RON VIN  5.0 V, IOUT  -0.5 A  46    68 m VIN  3.3 V, IOUT  -0.5 A  58    87 VIN  1.8 V, IOUT  -0.5 A  106    169 VIN  1.2 V, IOUT  -0.2 A  210    450 Note 2 : This parameter is warranted by design. Note 3 : Ta = 85°C

© 2021 Toshiba Electronic Devices & Storage Corporation 4 AC Characteristics (Ta = 25°C) VIN = 1.2 V Characteristics Symbol Test Condition (Figure 1) Min Typ. Max Unit VOUT rise time tr RL = 500 Ω, CL = 0.1 μF  197  s VOUT fall time tf RL = 500 Ω, CL = 0.1 μF  110  s Turn on delay tON RL = 500 Ω, CL = 0.1 μF  335  s Turn off delay tOFF RL = 500 Ω, CL = 0.1 μF  6  s VIN = 3.3 V Characteristics Symbol Test Condition (Figure 1) Min Typ. Max Unit VOUT rise time tr RL = 500 Ω, CL = 0.1 μF  363  s VOUT fall time tf RL = 500 Ω, CL = 0.1 μF  125  s Turn on delay tON RL = 500 Ω, CL = 0.1 μF  324  s Turn off delay tOFF RL = 500 Ω, CL = 0.1 μF  10  s AC Waveform Figure 1 tr, tf, tON, tOFF Waveforms VIH VOUT VCT VOL VOH VIL 90% tON tOFF 50% 50% 10% tr tf VOUT 10% 90% 90% 10%

© 2021 Toshiba Electronic Devices & Storage Corporation 5 Application Note 1. Application circuit example (top view) The figure below shows the example of configuration for TCK126BG. 1) Input capacitor An input capacitor (CIN) is not necessary for the guaranteed operation of TCK126BG. However, it is recommended to use input capacitors to reduce voltage drop due to sharp changes in output current and also for improved stability of the power supply. When used, place CIN as close to V IN pin to improve stability of the power supply . Also, due to the CIN selected, V IN < VOUT may occur, causing a reverse current to flow through the body diode of the pass -through p-ch MOSFET of the load switch IC. In this case, a higher value for CIN as compared to CL is recommended. 2) Output capacitor An output capacitor (COUT) is not necessary for the guaranteed operation of TCK126BG. However, there is a possibility of overshoot or undershoot caused by output load transient response, board layout and parasitic components of load switch IC. In this case, an output capacitor with COUT more than 0.1μF is recommended. 3) Control pin A control pin for TCK126BG is Active High. This pin controls the pass-through p-ch MOSFET, operated by the control voltage (VCT). The control pin is equipped with Schmitt trigger . When the control voltage level is High, p -ch MOSFET is ON state. When control voltage level is Low, and the state of the MOSFETs is reversed. In addition, Control pin has a tolerant function such that it can be used even if the control voltage is higher than the input voltage. 4) Control voltage for Low Quiescent current If there is a difference between the control voltage and the input voltage, the current consumption may increase due to the circuit configuration. Therefore, it is recommended to use same voltage with VIN or 0 V as the control voltage for use with ultra-low current consumption. 5) Low input voltage and output voltage attenuation When TCK126BG is used at a low VIN voltage, the RON becomes high, so there is output voltage attenuation when a large current flows. Therefore, carefully check the required output current and output voltage before use. 6) Assembly If you use potting materials that contain halogen groups such as sulfur an d chlorine, characteristic defects may occur due to corrosion or conductive ions. Therefore, do not use potting materials that contain halogen groups such as sulfur or chlorine. Also, regarding the use of potting materials, be sure to thoroughly check the electrical characteristics and reliability tests of the customer before use. This product has a back side coating (BSC), but it does not provide complete protection from mechanical impacts. When picking up or testing the product, be very careful not to damage it. VOUT GND VIN CONTROL CL RL LOAD CIN Part number Control voltage IC Operation TCK126BG HIGH ON LOW OFF

© 2021 Toshiba Electronic Devices & Storage Corporation 6 2. Power Dissipation Board-mounted power dissipation ratings are available in the Absolute Maximum Ratings table. Power dissipation is measured on the board condition shown below. [The Board Condition] Glass epoxy board dimension : 40 mm x 40 mm , 4 layer Metal pattern ratio : approximately 70% each layer Please allow sufficient margin when designing a board pattern to fit the expected power dissipation. Also take into consideration the ambient temperature, input voltage, output current etc. and applying the appropriate derating for allowable power dissipa tion during operation. Ambient temperature Ta (°C) Power dissipation PD (mW) −40 120 400 800 1200 1600 2000

© 2021 Toshiba Electronic Devices & Storage Corporation 9 tON Response VIN = 1.8 V, CL = 0.1 μF, RL = 500 Ω VIN = 1.2 V, CL = 0.1 μF, RL = 500 Ω VIN = 3.3 V, CL = 0.1 μF, RL = 500 Ω VIN = 1.2 V, CL = 4.7 μF, RL = 500 Ω VIN = 1.8 V, CL = 4.7 μF, RL = 500 Ω VIN = 3.3 V, CL = 4.7 μF, RL = 500 Ω VOUT (2.0 V/div) IIN (10 mA/div) Time (200 μs/div) VCT (2.0 V/div) VCT (2.0 V/div) VOUT (2.0 V/div) IIN (50 mA/div) Time (200 μs/div) VCT (1.0 V/div) VOUT (2.0 V/div) IIN (10 mA/div) Time (200 μs/div) VCT (1.0 V/div) VOUT (2.0 V/div) IIN (50 mA/div) Time (200 μs/div) VCT (1.0 V/div) VOUT (2.0 V/div) IIN (10 mA/div) Time (200 μs/div) VCT (1.0 V/div) VOUT (2.0 V/div) IIN (50 mA/div) Time (200 μs/div)

© 2021 Toshiba Electronic Devices & Storage Corporation 10 tOFF Response Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. VIN = 1.8 V, CL = 0.1 μF, RL = 500 Ω VIN = 1.2 V, CL = 0.1 μF, RL = 500 Ω VIN = 3.3 V, CL = 0.1 μF, RL = 500 Ω VIN = 1.2 V, CL = 4.7 μF, RL = 500 Ω VIN = 1.8 V, CL = 4.7 μF, RL = 500 Ω VIN = 3.3 V, CL = 4.7 μF, RL = 500 Ω VCT (1.0 V/div) VOUT (2.0 V/div) IIN (10 mA/div) Time (1 ms/div) VCT (1.0 V/div) VOUT (2.0 V/div) IIN (10 mA/div) Time (1 ms/div) Time (1 ms/div) VCT (1.0 V/div) VOUT (2.0 V/div) IIN (10 mA/div) VCT (1.0 V/div) VOUT (2.0 V/div) IIN (10 mA/div) Time (1 ms/div) VCT (2.0 V/div) VOUT (2.0 V/div) IIN (10 mA/div) Time (1 ms/div) VCT (2.0 V/div) VOUT (2.0 V/div) IIN (10 mA/div) Time (1 ms/div)

Package Information

WCSP4G Unit: mm Weight: 0.38 mg (typ.)

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Product Information

TCK126BG specifications and overview.

Summary

0.08 nA Ultra small IQ 1.0 A Load Switch IC in Ultra Small Package 2021-10-28

Description

0.08 nA Ultra small IQ 1.0 A Load Switch IC in Ultra Small Package 2021-10-28

Source title TCK126BG Datasheet(PDF) - Toshiba Semiconductor

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