TCK106AF TOSHIBA | Alldatasheet
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TCK106AF/TCK107AF/TCK108AF 2015-12-29 1 TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCK106AF, TCK107AF, TCK108AF
1.0 A Load Switch IC with Slew Rate Control Driver in Small Package
The TC K106AF, TCK107AF and TCK108AF are load switch ICs for a general power management with slew rate control driver, featuring low switch ON resistance and wide input voltage operation from 1.1 to 5.5 V. Switch ON resistance is only 63 mΩ typical at VIN = 5.0 V, IOUT = -0.5 A condition and output current is available on 1.0 A. TCK107AF and TCK108AF feature output auto-discharge function. These devices are available in SMV (2.8 mm x 2.9 mm Typ.) package. Feature
- Low ON resistance : RON = 63 mΩ (Typ.) at VIN = 5.0 V, IOUT = -0.5 A RON = 71 mΩ (Typ.) at VIN = 3.3 V, IOUT = -0.5 A RON = 101 mΩ (Typ.) at VIN = 1.8 V, IOUT = -0.5 A RON = 175 mΩ (Typ.) at VIN = 1.2 V, IOUT = -0.2 A RON = 223 mΩ (Typ.) at VIN = 1.1 V, IOUT = -0.2 A
- Low Quiescent current IQ = 110 nA (Typ.) at VIN = 5.5 V, IOUT = 0 mA
- High output current: IOUT = 1.0 A
- Wide input voltage operation: VIN = 1.1 to 5.5 V
- Built in Slew rate control driver
- Built in Auto-discharge (TCK107AF and TCK108AF)
- Active High and Pull down connection between CONTROL and GND (TCK106AF and TCK107AF)
- Active Low (TCK108AF)
- G eneral purpose package SMV(SOT-25) (SC-74A) Pin Assignment (top view) Top marking SMV(SOT-25)(SC-74A) SMV SMV (SOT-25)(SC-74A) : 16 mg ( Typ.) VIN CONTROL GND NC VOUT 106: TCK106AF 107: TCK107AF 108: TCK108AF Start of commercial production 2016-01
TCK106AF/TCK107AF/TCK108AF 2015-12-29 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN -0.3 to 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage VOUT -0.3 to VIN +0.3 (Note1) V Output current IOUT DC 1.0 A Pulse 1.5 (Note2) Power dissipation PD 200 (Note3) mW 580 (Note4) Operating temperature range Topr −40 to 85 °C Junction temeperature Tj 150 °C Storage temperature Tstg −55 to 150 °C Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges . Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: V IN +0.3 ≤ 6.0 V Note 2: 1 ms pulse, 1% duty cycle Note 3: Unit Rating Note 4: Rating at mounting on a board (FR4 board: 25.4 mm x 25.4 mm x 1.6 mm) Block Diagram TCK106AF, TCK107AF TCK10 8AF Note 5: TCK107AF only OUT Control Logic V IN CONTROL V OUT GND Slew Rate Control Driver Control Logic V IN CONTROL V GND Slew Rate Control Driver Output Discharge (Note5) Pull Down
TCK106AF/TCK107AF/TCK108AF 2015-12-29 3 Operating conditions Characteristics Symbol Condition Min Max Unit Input voltage VIN ― 1.1 5.5 V Output current IOUT ― 1.0 A CONTROL High-level input voltage VIH 1.1 V ≤ VIN ≤ 5.5 V 0.9 ― V CONTROL Low-level input voltage VIL ― 0.4 V
Electrical Characteristics
DC Characteristics (Ta = -40 to 85°C) Characteristics Symbol Test Condition Min Typ. Max Unit Quiescent current (ON state) IQ VIN = VCT = 5.5 V, IOUT = 0 mA TCK106AF TCK107AF ― 110 230 nA VIN = 5.5 V, VCT = 0 V, IOUT = 0 mA TCK108AF Standby current (OFF state) IQ(OFF) VIN = 5.5 V, VCT = 0 V, VOUT = OPEN (Note6) TCK106AF TCK107AF ― 65 150 nA VIN = VCT = 5.5 V, VOUT = OPEN (Note6) TCK108AF OFF-state switch current ISD(OFF) VIN = 5.5 V, VCT = 0 V, VOUT = GND TCK106AF TCK107AF ― 14 1000 nA VIN = VCT = 5.5 V, VOUT = GND TCK108AF On resistance RON VIN = 5.0 V, IOUT = -0.5 A ― 63 90 mΩ VIN = 3.3 V, IOUT = -0.5 A ― 71 105 VIN = 1.8 V, IOUT = -0.5 A ― 101 155 VIN = 1.2 V, IOUT = -0.2 A ― 175 270 VIN = 1.1 V, IOUT = -0.2 A ― 223 ― Discharge on resistance RSD ― (TCK107AF and TCK108AF) ― 100 ― Ω Note 6: Except ISD(OFF) OFF-state switch current
TCK106AF/TCK107AF/TCK108AF 2015-12-29 4 AC Characteristics (Ta = 25°C) VIN = 1.2 V Characteristics Symbol Test Condition (Figure 1) Min Typ. Max Unit VOUT rise time tr RL = 500 Ω, CL = 0.1 μF ― 290 ― μs VOUT fall time tf RL = 500 Ω, CL = 0.1 μF TCK107AF TCK108AF ― 30 ― μs TCK106AF ― 104 ― Turn on delay tON RL = 500 Ω, CL = 0.1 μF ― 305 ― μs Turn off delay tOFF RL = 500 Ω, CL = 0.1 μF ― 5 ― μs VIN = 3.3 V Characteristics Symbol Test Condition (Figure 1) Min Typ. Max Unit VOUT rise time tr RL = 500 Ω, CL = 0.1 μF ― 130 ― μs VOUT fall time tf RL = 500 Ω, CL = 0.1 μF TCK107AF TCK108AF ― 25 ― μs TCK106AF ― 110 ― Turn on delay tON RL = 500 Ω, CL = 0.1 μF ― 100 ― μs Turn off delay tOFF RL = 500 Ω, CL = 0.1 μF ― 10 ― μs AC Waveform TCK106AF, TCK107AF TCK108 AF Figure 1 tr, tf, tON, tOFF Waveforms VIH VOUT VCT VOL VOH VIL 90% tON tOFF 50% 50% 10% tr tf VOUT 10% 90% 90% 10% VIH VOUT VCT VOL VOH VIL 90% tON tOFF 50% 50% 10%
TCK106AF/TCK107AF/TCK108AF 2015-12-29 5 Application Note 1. Application circuit example (top view) The figure below shows the recommended configuration for TCK106AF, TCK107AF and TCK108AF. 1) I nput capacitor An input capacitor (C IN) is not necessary for the guaranteed operation of TCK106AF, TCK107AF and TCK108AF. However, it is recommended to use input capacitors to reduce voltage drop due to sharp changes in output current and also for improved stability of the power supply. When used, place C IN as close to V IN pin to improve stability of the power supply . Also, due to the CIN selected, VIN < VOUT may occur, causing a rever se current to flow through the body diode of the pass -through p-ch MOSFET of the load switch IC. In this case, a higher value for CIN as compared to CL is recommended. 2) Output capacitor An output capacitor ( C OUT) is not necessary for the guaranteed operation of TCK106AF, TCK107AF and TCK108AF. However, there is a possibility of overshoot or undershoot caused by output load transient response, board layout and parasitic components of load switch IC. In this case, an output capacitor with COUT more than 0.1μF is recommended. 3) Control pin A control pins for TCK106AF and TCK107AF are both Active High and TCK108AF is Active Low. These controls both the pass -through p-ch MOSFET and the discharge n-ch MOSFET (e xcept TCK106AF), operated by the control voltage and Schmitt trigger. When the control voltage level is High (Low; TCK108AF), p-ch MOSFET is ON state and n-ch MOSFET is OFF state. When control voltage level is Low (High; TCK108AF), and the state of the MOSFETs is reversed. Also, pull down resistance equivalent to a few M Ω is connected between CONTROL and GND, thus the load switch IC is in OFF state even when CONTROL pin is OPEN(except TCK108AF). In addition, CONTROL pin has a tolerant function such that it can be used even if the control voltage is higher than the input voltage. VOUT GND VIN CONTROL CL RL LOAD CIN Part number Control voltage IC Operation TCK106AF TCK107AF HIGH ON LOW OFF OPEN OFF TCK108AF HIGH OFF LOW ON NC
TCK106AF/TCK107AF/TCK108AF 2015-12-29 6 2. Power Dissipation Both unit and board-mounted power dissipation ratings for TCK106AF, TCK107AF and TCK108AF are available in the Absolute Maximum Ratings table. Power dissipation is measured on the board shown below. Please allow sufficient margin when designing a board pattern to fit the expected power dissipation. Also take into consideration the ambient temperature, input voltage, output current etc and applying the appropriate derating for allowable power dissipation during operation. ①: Rating at mounting on a board Board material: FR4 board Board dimension: 25.4 mm × 25.4 mm × 1.6 mm Copper area: 645 mm2 ②: Unit Rating Ambient temperature Ta (°C) PD – Ta (SMV) Power dissipation P D (mW) −40 0 40 120 80 200 400 600 800
TCK106AF/TCK107AF/TCK108AF 2015-12-29 7 Representative Common Characteristics ON resistance RON (mΩ) OFF-state switch current ISDOFF (nA) Standby current IQ(OFF) (nA) IQ - VIN Input voltage VIN (V) Quiescent current (ON state) IQ (nA) Ta = 25°C 85°C -40°C IQ(OFF) - VIN Input voltage VIN (V) Ta = 25°C 85°C -40°C IOUT = 0 mA, VCT = 5.5 V VCT = 0 V, VOUT = GND Input voltage VIN (V) Ta = 85°C 25°C -40°C VCT = 0 V, VOUT = GND ISD(OFF) - VIN Ta = 25°C Output current IOUT (mA) ON resistance RON (mΩ) IOUT = 200 mA RON - IOUT RON - VIN Input voltage VIN (V) Ta = 25°C 85°C -40°C VIN = 1.2V 1.8V 3.3V 5.0V ON resistance RON (mΩ) Ambient temperature Ta (°C) VIN = 1.2V 1.8V 3.3V 5.0V IOUT = 200 mA RON - Ta
TCK106AF/TCK107AF/TCK108AF 2015-12-29 8 time t ( 200 μs/div) VIN = 1.2 V tON Response CL = 0.1μF 1.0μF 4.7μF 1.0 4.0 2.0 2.0 RL = 500Ω IOUT (mA) VOUT (V) VCT (V) time t ( 200 μs/div) 1.0 VIN = 3.3 V tON Response 4.0 2.0 100 CL = 0.1μF 1.0μF 4.7μF 2.0 RL = 500Ω IOUT (mA) VOUT (V) VCT (V) time t ( 200 μs/div) VIN = 5.0 V tON Response CL = 0.1μF 1.0μF 4.7μF 1.0 4.0 2.0 100 2.0 RL = 500Ω IOUT (mA) VOUT (V) VCT (V) TCK107AF tON Response time t ( 1 ms/div) VIN = 1.2 V tOFF Response CL = 0.1μF 1.0μF 4.7μF 1.0 4.0 2.0 2.0 RL = 500Ω IOUT (mA) VOUT (V) VCT (V) time t ( 1 ms/div) 1.0 VIN = 3.3 V tOFF Response 4.0 2.0 100 CL = 0.1μF 1.0μF 4.7μF 2.0 RL = 500Ω IOUT (mA) VOUT (V) VCT (V) TCK106AF tOFF Response
TCK106AF/TCK107AF/TCK108AF 2015-12-29 9 time t ( 1 ms/div) VIN = 5.0 V tOFF Response CL = 0.1μF 1.0μF 4.7μF 1.0 4.0 2.0 100 2.0 RL = 500Ω IOUT (mA) VOUT (V) VCT (V) time t ( 200 μs/div) VIN = 1.2 V tOFF Response CL = 0.1μF 1.0μF 4.7μF 1.0 4.0 2.0 2.0 RL = 500Ω IOUT (mA) VOUT (V) VCT (V) time t ( 200 μs/div) 1.0 VIN = 3.3 V tOFF Response 4.0 2.0 100 CL = 0.1μF 1.0μF 4.7μF 2.0 RL = 500Ω IOUT (mA) VOUT (V) VCT (V) TCK107AF tOFF Response time t ( 200 μs/div) VIN = 5.0 V tOFF Response CL = 0.1μF 1.0μF 4.7μF 1.0 4.0 2.0 100 2.0 RL = 500Ω IOUT (mA) VOUT (V) VCT (V)
TCK106AF/TCK107AF/TCK108AF 2015-12-29 10 Package dimension SMV (SOT -25)(SC-74A) Unit: mm Weight : 16mg ( Typ.)
TCK106AF/TCK107AF/TCK108AF 2015-12-29 11 Land pattern dimensions (for reference only) Unit: mm 0.95 0.95 2.4 1.0 0.8 0.8 0.6
TCK106AF/TCK107AF/TCK108AF 2015-12-29 12 RESTRICTIONS ON PRODUCT USE
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