TCK104G

TCK104G TOSHIBA | Alldatasheet

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TCK104G,TCK105G 2014-03-01 1 TOSHIBA CMOS Linear Integrated Ci rcuit Silicon Monolithic TCK104G, TCK105G Load Switch IC with Current Limit function The TCK104G and TCK105G are load switch ICs for power management with slew rate control driver and current limit function featuring wide input voltage operation from 1.1 to 5.5 V. Switch ON resistance is only 50 mΩ typical at 5.0V, -700mA load condition and these feature a slew rate control driver, thermal shutdown and output auto-dischar ge function. Output current type is available on -500mA, and -800mA. Thus it is easy to select devices and helpful for the design. This device is available in 0.4 mm pitch ultra small package WCSP6B (0.8 mm x 1.2 mm, t: 0.64 mm (max)) .Thus this devices is ideal for portable applications that require high-density board assembly such as cellular phone. Feature

• Wide input voltage operation: V IN = 1.1 to 5.5 V
• Low ON resistance : RON = 50 mΩ (typ.) at VIN = 5.0 V, -700 mA RON = 55 mΩ (typ.) at VIN = 3.3 V, -700 mA RON = 75 mΩ (typ.) at VIN = 1.8 V, -700 mA RON = 140 mΩ (typ.) at VIN = 1.2 V, -700 mA
• Low Quiescent Current: I Q = 20 μA (typ.) at IOUT = 0 mA
• Low standby current: I Q(OFF) = 0.1 μA (typ.) at OFF state
• Current limit function
• Inrush current reducing circuit
• Thermal Shutdown function
• Auto-discharge
• Pull down connection between CONTROL and GND
• Ultra small package : WCSP6B (0.8mm x 1.2mm, t: 0.64mm(max)) WCSP6B Weight: 1 mg (typ.) Start of commercial production 2013-04

TCK104G,TCK105G 2014-03-01 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN -0.3 to 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage VOUT -0.3 to VIN +0.3 V TCK104G 800 Output current IOUT TCK105G 1200 mA Power dissipation PD 800 (Note 1) mW Operating temperature range Topr −40 to 85 °C Junction temperature Tj 150 °C Storage temperature Tstg −55 to 150 °C Note : Using continuously under heavy loads (e.g. the application of high temperat ure/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operati ng temperature/current/voltage, etc. ) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept a nd Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board (Glass epoxy board dimension: 40mm x 40mm, both sides of board Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole: diameter 0.5mm x 28) P i n A s s i g n m e n t ( T o p v i e w ) Top marking Index A1: V OUT B1: VOUT C1: GND A2: V IN B2: VIN C2: CONTROL 1 2 A B C Lot trace code T: TCK104G U: TCK105G

TCK104G,TCK105G 2014-03-01 3 Block Diagram Function Table Function Part number Current limit Thermal Shutdown Output auto-discharge Control pin connection TCK104G Bulit in (Available up to 500mA) Bulit in Bulit in Pull down TCK105G Bulit in (Available up to 800mA) Bulit in Bulit in Pull down Thermal Shut down Control Logic Pull Down V IN V OUT GND Slew Rate Control Driver Output Discharge CONTROL Current Limit

TCK104G,TCK105G 2014-03-01 4

Electrical Characteristics

DC Characteristics (Ta = -40 to 85°C) Ta = 25°C Ta = −40 to 85°C Characteristics Symbol Test Condition Min Typ. Max Min Max Unit Input voltage VIN ⎯ 1.1 ⎯ 5.5 1.1 5.5 V CONTROL High-level input voltage V IH V CONTROL Low-level input voltage V IL V IN = 1.1 to 5.5 V ⎯ ⎯ 0.4 ⎯ 0.4 V Quiescent current ( ON state) IQ IOUT = 0 mA, VIN = VCT = 5.5 V ⎯ 20 ⎯ ⎯ 65 μA Standby current ( OFF state) IQ(OFF) VIN = 5.5 V, V CT = 0 V, VOUT = OPEN (Note2) ⎯ 0.1 ⎯ ⎯ 1 μA VIN = 5.0 V ⎯ 20 ⎯ ⎯ 1000 (Note3) VIN = 3.3 V ⎯ 2 ⎯ ⎯ 1000 VIN = 1.8 V ⎯ 1 ⎯ ⎯ 1000 OFF-state switch current ISD(OFF) VCT = 0 V, VOUT = GND VIN = 1.2 V ⎯ 1 ⎯ ⎯ 1000 nA VIN = 5.0 V ⎯ 50 60 ⎯ 83 VIN = 3.3 V ⎯ 55 66 ⎯ 83 VIN = 1.8 V ⎯ 75 89 ⎯ 101 VIN = 1.2 V ⎯ 128 166 ⎯ 171 IOUT = -400 mA (TCK104G) VIN = 5.0 V ⎯ 50 60 ⎯ 83 VIN = 3.3 V ⎯ 55 66 ⎯ 83 VIN = 1.8 V ⎯ 75 89 ⎯ 101 VIN = 1.2 V ⎯ 140 181 ⎯ 183 On resistance RON IOUT = -700 mA (TCK105G) mΩ TCK104G ⎯ 800 ⎯ ⎯ ⎯ Output current limit ICL ⎯ TCK105G ⎯ 1200 ⎯ ⎯ ⎯ mA Discharge on resistance RSD ⎯ ⎯ 100 ⎯ ⎯ ⎯ Ω (Note 2) ： Except ISD(OFF) OFF-state switch current (Note 3) ： Ta = 65 ℃

TCK104G,TCK105G 2014-03-01 5 AC Characteristics (Ta = 25°C) Characteristics Symbol Test Condition(Figure 1) Min Typ. Max Unit VOUT rise time tr V IN = 3.3 V , RL = 500 Ω , CL = 0.1 μF ⎯ 175 ⎯ μs VOUT fall time tf V IN = 3.3 V , RL = 500 Ω , CL = 0.1 μF ⎯ 40 ⎯ μs Turn on delay tON V IN = 3.3 V , RL = 500 Ω , CL = 0.1 μF ⎯ 130 ⎯ μ s Turn off delay tOFF V IN = 3.3 V , RL = 500 Ω , CL = 0.1 μF ⎯ 9 ⎯ μ s AC Waveform Figure 1 t r, tf, tON, tOFF Waveforms VIH VOUT VCT VOL VOH VIL 90% tON tOFF 50% 50% 10% tr tf VOUT 10% 90% 90% 10%

TCK104G,TCK105G 2014-03-01 6 Application Note 1. Application circuit example (top view) The figure below shows the recommended configuration for TCK104G and TCK105G 1) Input capacitor An input capacitor(C IN) is not necessary for the guaranteed operation of TCK104G and TCK105G. However, it is recommended to use input capacitors to reduce voltage drop due to sharp changes in output current and also for improved stability of the powe r supply. When used, place C IN as close to V IN pin to improve stability of the power supply. Also, due to the C IN selected, VIN < V OUT may occur, causing a reverse current to flow through the body diode of the pass-through p-ch MOSFET of the load switch IC. In this case, a higher value for C IN as compared to CL is recommended. 2) Output capacitor An output capacitor (C OUT) is not necessary for the guaranteed operation of TCK104G and TCK105G. However, there is a possibility of overshoot or undershoot caused by output load transient response, board layout and parasitic components of load switch IC. In this case, an output capacitor with C OUT more than 0.1μ F us recommended. 3) Control pin A control pins for TCK104G and TCK105G are both Active High, which controls both the pass-through p-ch MOSFET and the discharge n-ch MOSFET, operated by the control voltage and Schmitt trigger. When the control voltage level is High, p-ch MOSFET is ON state and n- ch MOSFET is OFF state. W hen control voltage level is Low, and the state of the MOSFETs is reversed. Also, pull down resistance equivalent to a few MΩ is connected between CONTROL and GND, thus the lo ad switch IC is in OFF state even when CONTROL pin is OPEN. In addition, CONTROL pin has a tolerant f unction such that it can be used even if the control voltage is higher than the input voltage. Control voltage IC Operation HIGH ON LOW OFF OPEN OFF VOUT GND VIN CONTROL CL RL LOAD CIN

TCK104G,TCK105G 2014-03-01 7 2. Power Dissipation Power dissipation is measured on the board condition shown below. [The Board Condition] Board material: Glass epoxy (FR4) Board dimension: 40mm x 40mm (both sides of board)，t=1.8mm Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole: diameter 0.5mm x 28 Please allow sufficient margin when designing a board pattern to fit the expected power dissipation. Also take into consideration the ambient temperature, input voltage, output current etc and applying the appropriate derating for allowable power dissipation during operation. 3. Current limit and Thermal shut down function Current limit and Thermal shutdown function are designed in these products, but these does not assure for the suppression of uprising device operation. In use of these products, please read through and understand dissipation idea for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum ratings in any condit ion. Furthermore, Toshiba recommend inserting failsafe system into the design. 200 400 600 800 1000 -40 0 40 80 120 Power Dissipation PD (mW) Ambient Temperature Ta (℃) PD -T a

TCK104G,TCK105G 2014-03-01 8 Representative Common Characteristics Input voltage V IN (V) On resistance R ON (m Ω) Output current I OUT ( m A ) Output current I OUT ( m A ) On resistance R ON (m Ω) TA = 25℃ VIN = 1.2V VIN = 3.3V VIN = 1.8V VIN = 5.0V Ron - IOUT (TCK105G) On resistance R ON (m Ω) TA = 25℃ VIN = 1.2V VIN = 1.8V VIN = 3.3V VIN = 5.0V Ron - IOUT (TCK104G) Input voltage V IN (V) OFF-state switch current ISD(OFF) (nA) Ambient temperature Ta ( ℃) Ron - Ta On resistance R ON (m Ω) ISD(OFF) - VIN VIN = 1.2V VIN = 3.3V VIN = 1.8V VIN = 5.0V Ron - VIN IOUT = -500mAIOUT = -500mA Ta = 25℃ 85 ℃ -45℃ VCT = 0 V, VOUT = GND

TCK104G,TCK105G 2014-03-01 9 Output Voltage vs Output Current TCK104G, TCR105G t ON Response VCT (V) VOUT (V) IOUT (mA) VCT (V) VOUT (V) IOUT (mA) IOUT (mA) VOUT (V) VCT (V) VOUT - IOUT (TCK104G) VIN = 1.2V VOUT - IOUT (TCK105G) 1.8V 3.3V 5.0V VIN = 1.2V 1.8V 5.0V 3.3V Output voltage V OUT (V) Output voltage V OUT (V) Output current I OUT ( m A ) Output current I OUT ( m A ) Pulse width= 2.5msPulse width= 2.5ms

TCK104G,TCK105G 2014-03-01 10 TCK104G, TCR105G t OFF Response VCT (V) VOUT (V) IOUT (mA) VCT (V) VOUT (V) IOUT (mA) IOUT (mA) VOUT (V) VCT (V)

TCK104G,TCK105G 2014-03-01 11 Package dimension Weight: 1 mg (typ.) Unit: mm

TCK104G,TCK105G 2014-03-01 12 RESTRICTIONS ON PRODUCT USE

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