TCBZT55B10

TCBZT55C2V0 TAK_CHEONG | Alldatasheet

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Technical content

Number: DB-066 June 2008 / D Page 1 SEMICONDUCTOR TAK CHEONG 500 mW QUADRO Mini-MELF Hermetically Sealed Glass Zener Voltage Regulators Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter Value Units Power Dissipation 500 mW Storage Temperature Range -65 to +175 °C Operating Junction Temperature +175 °C These ratings are limiting values above which the serviceability of the diode may be impaired. Specification Features: Zener Voltage Range 2.0 to 75 Volts Quadro mini-MELF Package Surface Device Type Mounting Hermetically Sealed Glass Compression Bonded Construction All External Surfaces Are Corrosion Resistant And Termianls are readily solderable RoHS Compliant Matte Tin (Sn) Terminal Finish Color Band Indicates Negative Polarity

Electrical Characteristics

TA = 25°C unless otherwise noted VZ @ IZT (Volts) Device Type Min Max IZT (mA) ZZT @ IZT (Ω) Max IZK (mA) ZZK @ IZK (Ω) Max IR @ VR (μA) Max VR (Volts) TCBZT55C 2V0 1.88 2.11 5 100 1 600 100 1 TCBZT55C 2V2 2.08 2.33 5 100 1 600 100 1 TCBZT55C 2V4 2.28 2.56 5 85 1 600 50 1 TCBZT55C 2V7 2.51 2.89 5 85 1 600 10 1 TCBZT55C 3V0 2.8 3.2 5 85 1 600 4 1 TCBZT55C 3V3 3.1 3.5 5 85 1 600 2 1 TCBZT55C 3V6 3.4 3.8 5 85 1 600 2 1 TCBZT55C 3V9 3.7 4.1 5 85 1 600 2 1 TCBZT55C 4V3 4 4.6 5 75 1 600 1 1 TCBZT55C 4V7 4.4 5 5 60 1 600 0.5 1 TCBZT55C 5V1 4.8 5.4 5 35 1 550 0.1 1 TCBZT55C 5V6 5.2 6 5 25 1 450 0.1 1 TCBZT55C 6V2 5.8 6.6 5 10 1 200 0.1 2 TCBZT55C 6V8 6.4 7.2 5 8 1 150 0.1 3 TCBZT55C 7V5 7 7.9 5 7 1 50 0.1 5 TCBZT55C 8V2 7.7 8.7 5 7 1 50 0.1 6.2 TCBZT55C 9V1 8.5 9.6 5 10 1 50 0.1 6.8 TCBZT55C 10 9.4 10.6 5 15 1 70 0.1 7.5 TCBZT55C 11 10.4 11.6 5 20 1 70 0.1 8.2 TCBZT55C 12 11.4 12.7 5 20 1 90 0.1 9.1 TCBZT55C 13 12.4 14.1 5 26 1 110 0.1 10 Cathode Anode ELECTRICAL SYMBOL Cathode Band Color: Blue TCBZT55C2V0 through TCBZT55C75 TCBZT55B2V0 through TCBZT55B75

Number: DB-066 June 2008 / D Page 2 SEMICONDUCTOR TAK CHEONG Electrical Characteristics TA = 25°C unless otherwise noted VZ @ IZT (Volts) Device Type Min Max IZT (mA) ZZT @ IZT (Ω) Max IZK (mA) ZZK @ IZK (Ω) Max IR @ VR (μA) Max VR (Volts) TCBZT55C 15 13.8 15.6 5 30 1 110 0.1 11 TCBZT55C 16 15.3 17.1 5 40 1 170 0.1 12 TCBZT55C 18 16.8 19.1 5 50 1 170 0.1 13 TCBZT55C 20 18.8 21.1 5 55 1 220 0.1 15 TCBZT55C 22 20.8 23.3 5 55 1 220 0.1 16 TCBZT55C 24 22.8 25.6 5 80 1 220 0.1 18 TCBZT55C 27 25.1 28.9 5 80 1 220 0.1 20 TCBZT55C 30 28 32 5 80 1 220 0.1 22 TCBZT55C 33 31 35 5 80 1 220 0.1 24 TCBZT55C 36 34 38 5 80 1 220 0.1 27 TCBZT55C 39 37 41 2.5 90 0.5 500 0.1 28 TCBZT55C 43 40 46 2.5 90 0.5 600 0.1 32 TCBZT55C 47 44 50 2.5 110 0.5 700 0.1 35 TCBZT55C 51 48 54 2.5 125 0.5 700 0.1 38 TCBZT55C 56 52 60 2.5 135 0.5 1000 0.1 42 TCBZT55C 62 58 66 2.5 150 0.5 1000 0.1 47 TCBZT55C 68 64 72 2.5 160 0.5 1000 0.1 51 TCBZT55C 75 70 79 2.5 170 0.5 1000 0.1 56 VF Forward Voltage = 1.0 V Maximum @ IF = 100 mA for all types VZ @ IZT (Volts) Device Type Min Max IZT (mA) ZZT @ IZT (Ω) Max IZK (mA) ZZK @ IZK (Ω) Max IR @ VR (μA) Max VR (Volts) TCBZT55B 2V4 2.35 2.45 5 85 1 600 50 1 TCBZT55B 2V7 2.65 2.75 5 85 1 600 10 1 TCBZT55B 3V0 2.94 3.06 5 85 1 600 4 1 TCBZT55B 3V3 3.23 3.37 5 85 1 600 2 1 TCBZT55B 3V6 3.53 3.67 5 85 1 600 2 1 TCBZT55B 3V9 3.82 3.98 5 85 1 600 2 1 TCBZT55B 4V3 4.21 4.39 5 75 1 600 1 1 TCBZT55B 4V7 4.61 4.79 5 60 1 600 0.5 1 TCBZT55B 5V1 5.00 5.20 5 35 1 550 0.1 1 TCBZT55B 5V6 5.49 5.71 5 25 1 450 0.1 1 TCBZT55B 6V2 6.08 6.32 5 10 1 200 0.1 2 TCBZT55B 6V8 6.66 6.94 5 8 1 150 0.1 3 TCBZT55B 7V5 7.33 7.63 5 7 1 50 0.1 5 TCBZT55B 8V2 8.04 8.36 5 7 1 50 0.1 6.2 TCBZT55B 9V1 8.92 9.28 5 10 1 50 0.1 6.8 TCBZT55B 10 9.80 10.20 5 15 1 70 0.1 7.5 TCBZT55B 11 10.78 11.22 5 20 1 70 0.1 8.2 TCBZT55B 12 11.76 12.24 5 20 1 90 0.1 9.1 TCBZT55B 13 12.74 13.26 5 26 1 110 0.1 10 TCBZT55B 15 14.70 15.30 5 30 1 110 0.1 11 TCBZT55B 16 15.68 16.32 5 40 1 170 0.1 12 TCBZT55B 18 17.64 18.36 5 50 1 170 0.1 13 TCBZT55B 20 19.60 20.40 5 55 1 220 0.1 15 TCBZT55B 22 21.56 22.44 5 55 1 220 0.1 16 TCBZT55B 24 23.52 24.48 5 80 1 220 0.1 18 TCBZT55B 27 26.46 27.54 5 80 1 220 0.1 20 TCBZT55B 30 29.40 30.60 5 80 1 220 0.1 22 TCBZT55B 33 32.34 33.66 5 80 1 220 0.1 24 TCBZT55B 36 35.28 36.72 5 80 1 220 0.1 27

Number: DB-066 June 2008 / D Page 3 SEMICONDUCTOR TAK CHEONG Electrical Characteristics TA = 25°C unless otherwise noted VZ @ IZT (Volts) Device Type Min Max IZT (mA) ZZT @ IZT (Ω) Max IZK (mA) ZZK @ IZK (Ω) Max IR @ VR (μA) Max VR (Volts) VF Forward Voltage = 1.0 V Maximum @ IF = 100 mA for all types Notes: 1. The type numbers listed have zener voltage min/max limits as shown. 2. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighte r voltage tolerances, contact your nearest Tak Cheong Electronics representative. 3. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed to IZT or IZK.

Number: DB-066 June 2008 / D Page 5 SEMICONDUCTOR TAK CHEONG Package Outline Case Outline QUADRO (Mini-MELF) Millimeters Inches DIM Min Max Min Max A 3.30 3.70 0.130 0.146 B 1.40 1.60 0.055 0.063 C 0.25 0.40 0.010 0.016 D Typical 1.8 Typical 0.071 Notes: 1. JEDEC DO-213 2. Polarity Denoted by a Band. B C A D >R3 (R 0.12)