TCB501HQ

TCB501HQ TOSHIBA | Alldatasheet

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©2016 TOSHIBA Corporation 2016-06-28 1 CDMOS Linear Integrated Circuit Silicon Monolithic TCB501HQ Maximum Power 49 W BTL × 4ch Audio Power Amp IC 1. Description The TCB501HQ is a power IC with built-in four-channel BTL amplifier developed for car audio application. The maximum output power POUT is 49 W using a pure complementary P-ch and N-ch DMOS output stage. In addition, a standby switch, a mute function, output offset voltage detector, high-side switch and various protection features are included. 2. Applications Power Amp IC developed for car audio applications. 3. Features

• High output power, low distortion, and low noise property (for details, refer to the Table 1 Typical Characteristics).
• Built-in high-side switches. (Pin 25)
• Built-in output offset detection for full time (Pin 1)
• Built-in muting function. (Pin 22)
• Built-in auto muting functions (for low VDD and standby sequence)
• Built-in standby switch. (Pin4)
• Built-in various protection circuits (thermal shut down, over-voltage, short to GND, short to VDD, and output to output short)
• Start stop Cruising corresponded to VDD=6V (Engine idle reduction capability) Note 1: Typical test conditions: Unless otherwise specified, VDD = 13.2 V, f = 1 kHz, RL_amp = 4 Ω, and Ta = 25°C Rg: Signal source resistance Weight: 7.7g (typ.) Table 1 Typical characteristics (Note 1) Test condition Typ. Unit Output power (POUT) VDD = 15.2 V, max power 49 W VDD = 14.4 V, max power 44 VDD = 14.4V, THD = 10% 29 THD =10% 24 Total harmonic distortion (THD) POUT = 4 W 0.006 % Output noise voltage (VNO) (Rg = 0 Ω) Filter: A weighted 45 µV Operating Supply voltage range (VDD) RL_amp = 4 Ω 6 to 18 V RL_amp = 2 Ω 6 to 16

C2: 10 μF +B C3: 0.1 μF C5: 3900 μF OUT1 (+) 11 C1: 0.22 μF

8 PW-GND1

OUT1 (−) IN1 OUT2 (+) 12

2 PW-GND2

OUT2 (−) IN2 OUT3 (+) 15 PW-GND3 OUT3 (−) IN3 OUT4 (+) 14

24 PW-GND4

OUT4 (−) IN4 C6: 1 μF

4 Stby

22 Mute

C4: 1 μF R1: 47 kΩ Play Mute RL_amp Pre-GND AC-GND H-SW C1: 0.22 μF C1: 0.22 μF C1: 0.22 μF RL_amp RL_amp RL_amp AC-GND AC-GND AC-GND AC-GND

1 Offset Det

1. Block Digaram Some of the functional blocks, circuits or constants labels in the block diagram may have been omitted or simplified for clarity. In the following explanation, a "channel" is a circuit which consists of INx, OUTx (+), OUTx (-), and PW-GNDx. (x: 1 to 4)

1. Pin Configuration

5.1 Pin configuration (top view)

OUT4 (-) MUTE OUT4 (+) VDD1 OUT3 (-) PW-GND3 OUT3 (+) AC-GND IN3 IN4 Pre-GND IN2 IN1 Ripple OUT1 (+) PW-GND OUT1 (-) V DD2 OUT2 (+) Stby OUT2 (-) PW-GND2 OffsetDet

5.2 Pin Description

Pin Symbol I/O Description

1 Offset Det V od-OUT Output offset/short voltage detector output

2 PW-GND2 ― Ground for OUT2

3 OUT2(-) OUT OUT2(-) output

4 Stby V ST-IN Stand- by voltage input

5 OUT2(+) OUT OUT2(+) output

6 VDD2 V DD-IN Supply voltage 2

7 OUT1(-) OUT OUT1(-) output

8 PW-GND1 ― Ground for OUT1

9 OUT1(+) OUT OUT1(+) output

10 Ripple ― Ripple voltage

11 IN1 IN OUT1 input

12 IN2 IN OUT2 input

13 Pre-GND ― Signal ground

14 IN4 IN OUT4 input

15 IN3 IN OUT3 input

16 AC-GND ― Common reference voltage for all input

17 OUT3(+) OUT OUT3(+) output

18 PW-GND3 ― Ground for OUT3

19 OUT3(-) OUT OUT3(-) output

20 VDD1 V DD-IN Supply voltage 1

21 OUT4(+) OUT OUT4(+) output

22 Mute V muteIN Mute voltage input

23 OUT4(-) OUT OUT4(-) output

24 PW-GND4 ― Ground for OUT4

25 H-SW HSW High-side switch output

C2: 10 μF +B C3: 0.1 μF C5: 3900 μF OUT1 (+) 11 C1: 0.22 μF OUT1 (−) IN1 OUT2 (+) 12 OUT2 (−) IN2 OUT3 (+) 15 PW-GND3 OUT3 (−) IN3 OUT4 (+) 14 OUT4 (−) IN4 C6: 1 μF C4: 1 μF R1: 47 kΩ Play Mute RL_amp Pre-GND AC-GND H-SW C1: 0.22 μF RL_amp RL_amp RL_amp AC-GND AC-GND AC-GND AC-GND C1: 0.22 μF C1: 0.22 μF 6. Specification of External Parts Component Name Recommended Value Pin Purpose Effect (Note1) Lower than Recommended Value Higher than Recommended Value C1 0.22 μ F INx(x:1 to 4) To eliminate DC Cut-off frequency becomes higher Cut-off frequency becomes lower C2 10 μ F Ripple To reduce ripple Turn on/off time shorter Turn on/off time longer C3 0.1 μ F V DD1, VDD2 To provide sufficient oscillation margin Reduces noise and provides sufficient oscillation margin C6 1 μF AC-GND Common reference voltage for all input Pop noise is suppressed when C1: C6 = 1:4. (Note2) C5 3900 μ F VDD1, VDD2 Ripple filter Filter for power supply humming and ripple R1 47k Ω Mute Mute ON/OFF Smooth switching Pop noise becomes larger Switching time becomes longer C4 1μF Note1: When the unrecommended value is used, please examine it enough by system evaluation. Note2: Since “AC-GND” pin is a common reference voltage for all input, this product needs to set the ratio of an input capacitance (C1) and the AC-GND capacitance (C6) to 1:4 Note3: Use the low leak current capacitor for C1 and C6.

1. Mute Function (Pin 22) The audio mute fun ction is enabled by setting pin 22 Low. R1 and C4 determine the time constant of the mute function. The time constant affects pop noise generated when power or the mute function is turned on or off; thus, it must be determined on a per-application basis. (Refer to Figures 3 and 4.) The values of external elements (R1, C4) of this pin have decided them based on 5 V control. In case that it is controlled by other than 5V, please reexamine the value of the external pull-up resistor as follows; For example: When the control voltage is changed from 5V to 3.3V, the pull-up resistor should be: 3.3V/5V×47 kΩ=31kΩ Figure 3 Mute Function Figure 4 Mute attenuation − VMUTE (V) 5 V 10 kΩ Control voltage: VMUTE (V) ATT – VMUTE Mute attenuation ATT (dB)

1. Auto Muting Functions The TCB501HQ has two automatic mute functions. a) Low VDD Mute (Automatic mute function) b) Standby Off Mute.

9.1 Low VDD Mute

When the supply voltage became lower than 5.5V ( typ.), The TCB501HQ operates the mute circuit automatically. This function prevents the large audible transient noise which is generated by low VDD.

9.2 Standby-Off Mute

The TCB501HQ operates the mute circuit during the standby-off transition. When the ripple voltage reached V DD/5, the standby -off mute is terminated. Additionally, in the standby -off transition, it is recommended that the external mute has to be ON till the internal mute-OFF, a nd that the timing of the external mute-OFF has to be set after the internal mute-OFF. Note1: Out sound time is changed due to capacity of the C2 capacitor. Stby pin (Pin 4) Mute pin ( Pin 22) VSB t t t Ripple pin (Pin 10) t VM t Mute control voltage VM Output pin VDD/4 VDD/5 Out sound time 500ms (max) Note1 ピ VDD/2

(Pin 4) Mute pin ( Pin 22) VSB t t t Ripple pin (Pin 10) t VM t Mute control voltage VM Output pin VDD/4 VDD/2

9.3 Mute-off after standby-off

The pop noise is generated when the capacitor of ripple, input, and ACGND has not finished to charge fully. Please set “Mute-off” that it is sufficient margin in considering an enough charge time after the middle point potential stable. Figure 5 Mute-off transition after standby-off

1. High-side Switch The Q1 (high-side switch) is always turned on during Power-ON. The high-side switch can be used for many application circuits related to Power -ON. This output incorporates the backflow prevention structure. V DD Rsw Figure 6 High-side switch

1. Output DC Offset Detection This function detects the offset voltage between OUT (+) and OUT (-). The detection result is gotten by pin1. When the offset voltage appeared by the external parts accident, for example the leak of coupling capacitor, this function can contribute to a part of safety system to prevent the speaker damage. The example flowchart: The safety system to prevent damaging to speakers by abnormal offset. The result of detection does not judge the abnormal offset or not. This function detects only the offset voltage which is decided by specification.

11.1 Operation description of output offset pin

The result of output offset voltage detection of Pin1 is gotten by the internal open -drain transistor which synchronizes with off set voltage. This function is always available. If this pin does not be used, connect to GND or open. Figure 7 Generating example of abnormal output offset voltage Figure 8 Output waveform of amplifier and pin 1 Offset detection output +Vos-det(on) -Vos-det(on) Output waveform OUT(+) to OUT(-) Abnormal offset voltage Term of abnormal offset vlotage t Outputing low when the voltage exceeds the threshold value. (a) Offset detection (b) Judgment Normal / Abnormal (c) To reduce the speaker stress Standby-ON, Mute-ON etc. Vref E. vol Vos-det(on) Power Amp IC Leak or short Vin(dc) RS2 RS1 Vout(dc) (Reference) The specification defines the Offset voltage as "OUT(+) - OUT(-)" Rs1 generates the positive offset voltage. Rs2 generates the negative offset voltage. Vout(dc) > Vin(dc) Leak or short 1 V1 Vref

1. Low voltage operation The TCB501HQ applies the amplifier circuit to reduce the audible pop noise and sound cutting due to low V DD voltage.

12.1 Operation description

When the headroom voltage is suppressed by the low V DD, the TCB501HQ switches output middle point potential from VDD/2 to V DD/4 and reduces the audible pop noise and the sound cutting. T he behavior of outputs (Vout) and ripple (Vrip) is showed the figure 9 below. (A) VDD > Vth1 Normal operation (B) VDD < Vth1 Switch middle point potential from VDD/2 to Vrip to keep the headroom voltage. (C) VDD < Vth2 The C2 (ripple) is discharged with muting, and amplifier is off. Each of threshold voltage is below. Vrip = 3V (Ripple pin voltage) Vhr1 = 2.2V (typ.), Vhr2 = 1.7V (typ.) Vth1 = Vout+Vhr1 = 2Vrip + Vhr1, Vth2 = Vrip + Vhr2 Figure 9 Output VDD/2 voltage in lowering VDD

1. P rotection Functions This product has internal protection circuits such as thermal shut down, over-voltage, short to VDD, short to GND, and out to out short circuit protections. (1) Thermal shut down It operates when junction temperature exceeds 150°C (typ.). When it operates, it is protected in the following order. 1. An Attenuation of an output starts first and the amount of attenuation also increases according to a temperature rising, 2. All outputs become in a mute state, when temperature continues rising in spite of output attenuation. 3. Shutdown function starts, when a temperature rise continu es though all outputs are in a mute state. In any case if temperature falls, it will return to normal operation automatically. (2) Over-voltage It operates when voltage exceeding operating range is supplied to VDD pin. If voltage falls, it will return to normal operation automatically. When it operates, all outputs bias and high-side switch are turned off and all outputs are shut-off. Threshold voltage is 21.5 V(typ.) (3) Short to V DD, Short to GND, Output to output short It operates when each output pin is in irregular connection and the load line goes over the SOA (Safe Operation Area) of power transistor (DMOS). When it operates, all outputs bias circuits are turned off and all outputs are shut -off. If irregular connection is canceled, it will return to normal operation automatically.

1. Absolute Maximum Ratings (Ta = 25°C unless otherwise specified) Characteristics Symbol Rating Unit Condition Supply voltage (surge) VDD (surge) 50 V Max 0.2 s. Supply voltage (DC) VDD (DC) 25 V Max voltage applied for 1 min. Output current of amplifier (surge ) Io(Peak) 9 A Power dissipation PD 125 W Note 4 Junction temperature Tj 150 °C Note 5 Operating temperature range Topr -40 to 85 °C Storage temperature Tstg -55 to 150 °C Voltage difference between pins VDD1 to VDD2 dV1-2 ±0.3 V Permissive voltage difference between VDD1 and VDD2 Pre-GND to PW-GND dV_Gnd ±0.3 V Permissive voltage difference between Pre-GND and PW-GND Voltage of input pin VDD VDD1,2 6 to 18 V RL=4Ω Stby Stby GND-0.3 to VDD+0.3 V Mute Mute GND-0.3 to VDD+0.3 V IN In1,2,3,4 GND-0.3 to VDD+0.3 V ACGND ACG GND-0.3 to VDD+0.3 V Ripple Rip GND-0.3 to VDD+0.3 V Diag Diag GND-0.3 to VDD+0.3 V The absolute maximum ratings of a semiconductor device are a set of specified parameter values, which must not be exceeded during operation, even for an instant. If any of these rating would be exceeded during operation, the device electrical characteristics may be irreparably altered and the reliability and lifetime of the device can no longer be guaranteed. Moreover, these operations with exceeded ratings may cause break down, damage, and/or degradation to any other equipment. Applications using the device should be designed such that each maximum rating will never be exceeded in any operating conditions. Before using, creating, and/or producing designs, refer to and comply with the precautions and conditions set forth in this document. Note 4: Package thermal resistance R th(j-t) = 1°C/W (typ.) (Ta = 25°C, with infinite heat sink) Note 5: When the TAB temperature is more than absolute maximum ratings, the thermal shut down system (mute) operates. The threshold TAB temperature is 16 0°C(typ.). The threshold TAB temperature is defined as the highest temperature point of the metal side surface. Regarding heat radiation design, please design the device so that heat is appropriately radiated, not to exceed the specified junction temperature (Tj) at any time and condition.

Ambient Temperature Ta ( °C) PD (max) – Ta Power Dissipation PD (max) (W) (1) (2) (3) 25 0 150 120 100 100 50 125 (1) Infinite heat sink Rth(j-t) = 1°C/W (2) Heat sink (Rth(HS) = 3.5°C/W) Rth(j-t) + Rth(HS) = 4.5°C/W (3) No heat sink Rth(j-a) = 39°C/W 15. Power dissipation 16. Operating Range Characteristics Symbol Condition Min Typ. Max Unit Supply voltage VDD RL=4Ω 6 ― 18 V RL=2Ω 6 ― 16 V

1. Electrical Characteristics

17.1 Amplifier

(Unless otherwise specified, V DD=13.2V, f=1kHz, , RL_amp=4Ω, RL_sw=39Ω, Vsb/Vm=5V, Ta=25°C) ( ): The guaranteed value by design Characteristics Symbol Test Condition Min Typ. Max Unit Quiescent supply current IQ V IN = 0V 100 180 320 mA Output power POUT MAX (1) V DD = 15.2 V, max POWER － 49 － W POUT MAX (2) V DD = 14.4 V, max POWER － 44 － POUT (1) V DD = 14.4 V, THD = 10% 27 29 － POUT (2) THD = 10% 21 24 － Output power(RL=2Ω) POUT MAX (3) V DD = 14.4 V, max POWER － 80 － W POUT (3) V DD = 14.4 V, THD = 10% － 46 － POUT (4) THD = 10% － 45 － Total harmonic distortion THD P OUT = 5 W － 0.006 0.07 % Voltage gain GV V OUT = 0.775 Vrms 25 26 27 dB Channel-to-channel voltage gain △GV V OUT = 0.775 Vrms −1.0 0 1.0 dB Output noise voltage VNO Rg = 0 Ω , DIN Audio － 45 80 μV Ripple rejection ratio R.R. frip = 100 Hz, Rg = 620 Ω Vrip = 0.775 Vrms 50 70 － dB Crosstalk C.T. Rg = 620 Ω POUT = 4 W － 80 － dB Output offset voltage VOFFSET － −70 0 70 mV Input resistance RIN － － 100 － k Ω Standby current ISB Standby state, V4=0, V22=0 － 0.01 1 μA Standby control voltage VSB H POWER: ON 2.2 V DD V VSB L POWER: OFF 0 － 0.8 Mute control voltage VM H MUTE: OFF 2.2 － V DD V VM L MUTE: ON, R 1 = 47 kΩ 0 － 0.8 Mute attenuation ATT M MUTE: ON, DIN Audio VOUT = 7.75 Vrms → Mute: OFF 85 100 － dB

17.2 High-side switch

(Unless otherwise specified, VDD=13.2V, f=1kHz, RL_amp=4Ω, RL_sw=39Ω, Vsb/Vm=5V, Ta=25°C) ( ): The guaranteed value by design Characteristics Symbol Test condition Min Typ. Max Unit Over Current limits Iprot Vo = 12.6V 400 600 800 mA I/O voltage diffirence dVo Vsb=5V ― 0.45 (0.8) V Delay time (ON) Tdon Vo_sw ≥V DD×0.95 ― 0.01 (1) ms Delay time (OFF) Tdoff Vo_sw ≤V DD×0.05 ― 0.2 (1) ms Switch off voltage Vo_sw(L) Vsb=0V, RL_sw=10k Ω 0 0.01 0.1 V Peak protection current Ihsw V DD=0V, (HSW=VDD-Δvo) ― ― 200 μA Lower limit of output VHSWL V DD=4.5V, IOUT=0 to 100mA 3 ― ― V Figure 10 High-side switch measurement circuit RL = 39Ω S

17.3 Output offset voltage detection

(Unless otherwise specified, VDD=13.2V, f=1kHz, RL_amp=4Ω, Rpull-up=10kΩ, Vsb/Vref=5V, and Ta=25°C) ( ): The guaranteed value by design Characteristics Symbol Test condition Min Typ. Max Unit Supply voltage for detection of output offset VDD_offset1 Vsb=5V, V ref=5V 6 ― 18 V Detection voltage for output offset Vos1-det(on) Vsb=5V, V o(+)-Vo(-) ±1.0 ±1.5 ±2.0 V Saturated voltage in detection P1-sat Rpull-up=10kΩ, Vref=5.0V In detection (Pin: Low ) ― 100 500 mV Detection time for output offset Dtime Quiescent ― 300 500 ms

C2: 10 μF +B C3: 0.1 μF C5: 3900 μF OUT1 (+) 11 C1: 0.22 μF OUT1 (−) IN1 OUT2 (+) 12 OUT2 (−) IN2 OUT3 (+) 15 PW-GND3 OUT3 (−) IN3 OUT4 (+) 14 OUT4 (−) IN4 C6: 1 μF C4: 1 μF R1: 47 kΩ Play Mute RL_amp: 4Ω Pre-GND AC-GND H-SW C1: 0.22 μF C1: 0.22 μF C1: 0.22 μF RL_amp: 4Ω RL_amp: 4Ω RL_amp: 4Ω AC-GND AC-GND AC-GND AC-GND

1. Test circuit

1. Characteristic Chart 19.1 Total Harmonic Distortion vs. Output Power Fig. 11-1 T otal Harmonic Distortion of Each Frequency (RL=4Ω) Vdd = 13.2 V GV = 26dB RL = 4 Ω Filter

100 Hz : ~ 30 kHz

1 kHz : 400 Hz ~ 30 kHz 10 kHz : 400 Hz ~ 20 kHz : 400 Hz ~ Vdd = 13.2 V GV = 26dB RL = 4 Ω Filter 1 kHz : 400 Hz ~ 30 kHz 10 kHz : 400 Hz ~ 20 kHz : 400 Hz ~ Vdd = 13.2 V GV = 26dB RL = 4 Ω Filter 1 kHz : 400 Hz ~ 30 kHz 10 kHz : 400 Hz ~ 20 kHz : 400 Hz ~ Vdd = 13.2 V GV = 26dB RL = 4 Ω Filter 1 kHz : 400 Hz ~ 30 kHz 10 kHz : 400 Hz ~ 20 kHz : 400 Hz ~ f = 1 kHz 100 Hz 10 kHz 1500 20 kHz 25°C/W f = 1 kHz 100 Hz 10 kHz 1500 20 kHz 25°C/W f = 1 kHz 100 Hz 10 kHz 1500 20 kHz 25°C/W f = 1 kHz 100 Hz 10 k 25°C/ W 1500 20 kHz 25°C/W THD – POUT (ch1) THD – POUT (ch2) THD – POUT (ch3) THD – POUT (ch4) Total harmonic distortion THD (%) Total harmonic distortion THD (%) Total harmonic distortion THD (%) Total harmonic distortion THD (%) Output power P OUT (W) Output power P OUT (W) Output power P OUT (W) Output power P OUT (W)

0.001 0.01 0.1 0.1 1 10 100 0.001 0.01 0.1 0.1 1 10 100 0.001 0.01 0.1 0.1 1 10 100 0.001 0.01 0.1 0.1 1 10 100 Fig.11-2 T otal Harmonic Distortion by Power-supply Voltage (RL=4Ω) Total harmonic distortion THD (%) Total harmonic distortion THD (%) 13.2 V 6 V 1500 18 V GV = 26dB RL = 4 Ω f = 1 kHz Filter

400 Hz ~ 30 kHz

GV = 26dB RL = 4 Ω f = 1 kHz Filter 13.2 V 6 V 1500 18 V 13.2 V 6 V 1500 18 V 13.2 V 6 V 1500 18 V Total harmonic distortion THD (%) Total harmonic distortion THD (%) GV = 26dB RL = 4 Ω f = 1 kHz Filter GV = 26dB RL = 4 Ω f = 1 kHz Filter THD – POUT (ch2) THD – POUT (ch1) Output power P OUT (W) Output power P OUT (W) THD – POUT (ch3) THD – POUT (ch4) Output power P OUT (W) Output power P OUT (W)

19.2 Various Frequency Characteristics

Fig.11-3 Frequency Characteristics of Total Harmonic Distortion THD – f(ch1) THD – f(ch2) THD – f(ch3) THD – f(ch4) VCC = 13.2 V RL = 4 Ω POUT = 5 W No Filter VCC = 13.2 V RL = 4 Ω POUT = 5 W No Filter VCC = 13.2 V RL = 4 Ω POUT = 5 W No Filter VCC = 13.2 V RL = 4 Ω POUT = 5 W No Filter frequency f (kHz) frequency f (kHz) frequency f (kHz) frequency f (kHz) Total harmonic distortion THD (%) Total harmonic distortion THD (%) Total harmonic distortion THD (%) Total harmonic distortion THD (%) 6 V 1500 18 V 13.2 V 6 V 1500 6 V 1500 6 V 1500 13.2 V 13.2 V 13.2 V

18 V 18 V

Fig. 11-4 Frequency Characteristics of Voltage Gain and Mute Attenuation Fig. 11-5 Frequency Characteristics of Ripple Rejection Rate 周 波 数 f (kHz) frequency f (kHz) GV – f Voltage gain GV (dB) 1ch to 4ch VCC = 13.2 V RL = 4 Ω VOUT = 0.775 Vrms (0dBm) ATTMUTE – f VCC = 13.2 V RL = 4 Ω VOUT = 7.75 Vrms (20dBm) 1ch to 4ch Mute attenuation ATTMUTE (dB) R.R. – f VCC = 13.2 V RL = 4 Ω RG = 620 Ω Vrip = 0.775 Vrms (0dBm) GV = 26dB 2ch 4ch 1ch 3ch frequency f (kHz) Ripple rejection ratio R.R. (dB) frequency f (kHz)

Fig. 11-6 Frequency Characteristics of Cross Talk Cross talk C.T. (dB) Cross talk C.T. (dB) C.T. – f (ch1) C.T. – f (ch2) C.T. – f (ch3) C.T. – f (ch4) 2ch 4ch 3ch 1ch 4ch 3ch 1ch 2ch 4ch 3ch 1ch 2ch VCC = 13.2 V RL = 4 Ω f = 1 kHz VOUT = 0.775 Vrms (0dBm) RG = 620 Ω VCC = 13.2 V RL = 4 Ω f = 1 kHz VOUT = 0.775 Vrms (0dBm) RG = 620 Ω VCC = 13.2 V RL = 4 Ω f = 1 kHz VOUT = 0.775 Vrms (0dBm) RG = 620 Ω VCC = 13.2 V RL = 4 Ω f = 1 kHz VOUT = 0.775 Vrms (0dBm) RG = 620 Ω Cross talk C.T. (dB) Cross talk C.T. (dB) frequency f (kHz) frequency f (kHz) frequency f (kHz) frequency f (kHz)

19.3 Output Power Characteristics to Input Voltage

19.4 Power Dissipation vs. Output Power Output power POUT/CH (W) POUT (ch1) – VIN POUT (ch2) – VIN POUT (ch3) – VIN POUT (ch4) – VIN Output power P OUT (W) Output power P OUT (W) Output power P OUT (W) Output power P OUT (W) Input signal voltage V IN (rms) (V) Input signal voltage V IN (rms) (V) Input signal voltage V IN (rms) (V) Input signal voltage V IN (rms) (V) VCC = 13.2 V RL = 4 Ω No Filter VCC = 13.2 V RL = 4 Ω No Filter VCC = 13.2 V RL = 4 Ω No Filter VCC = 13.2 V RL = 4 Ω No Filter 1 kHz

100 Hz f = 20 kHz

f = 20 kHz 10 kHz 100 Hz f = 20 kHz 1 kHz 100 Hz 10 kHz f = 20 kHz 10 kHz 1 kHz 100 Hz PD – POUT (RL = 4 Ω) f = 1 kHz RL = 4 Ω 4ch drive 18 V 13.2 V 6 V Power dissipation PD (W)

19.5 Other characteristics

Signal source resistance Rg (Ω) ICCQ – VCC VIN = 0 V RL =  Supply voltage VCC (V) Quicent current ICCQ (mA) VCC = 13.2 V RL = 4 Ω f = 1 kHz Filter ~ 20 kHz VNO – Rg Output noise voltage VNO (μV) 1ch to 4ch

1. Package Dimensions HZIP25-P-1.00F Unit: mm Weight: 7.7 g (typ.)

1. Attention in Use

• Use an appropriate power supply fuse to ensure that a large current does not continuously flow in case of over current and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow and the breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are required.
• If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to prevent device malfunction or breakdown caused by the current resulting from t he inrush current at power ON or the negative current resulting from the back electromotive force at power OFF. For details on how to connect a protection circuit such as a current limiting resistor or back electromotive force adsorption diode, refer to individual IC datasheets or the IC databook. IC breakdown may cause injury, smoke or ignition.
• Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition.
• Carefully select external components (such as inputs and negative feedback capacitors) and load components (such as speakers), for example, power amp and regulator. If there is a large amount of leakage current such as input or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is connected to a speaker with low input withstand voltage, overcurrent or IC failure can cause smoke or ignition. (The over current can cause smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied Load (BTL) connection type IC that inputs output DC voltage to a speaker directly.
• Over current Protection Circuit Over current protection circuits (referred to as current limiter circuits) do not necessarily protect ICs under all circumstances. If the Over current protection circuits operate against the over current, clear the over current status immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings can cause the over current protection circuit to not operate properly or IC breakdown before operation. In addition, depending on the method of use and usage conditions, if over current continues to flow for a long time after operation, the IC may generate heat resulting in breakdown.
• Thermal Shutdown Circuit Thermal shutdown circuits do not necessarily protect ICs under all circumstances. If the Thermal shutdown circuits operate against the over temperature, clear the heat generation status immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings can cause the thermal shutdown circuit to not operate properly or IC breakdown before operation.
• Heat Radiation Design When using an IC with large current flow such as power amp, regulator or driver, please design the device so that heat is appropriately radiated, not to exceed the specified junction temperature (Tj) at any time and condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition, please design the device taking into considerate the effect of IC heat radiation with peripheral components.
• Installation to Heat Sink Please install the power IC to the heat sink not to apply excessive mechanical stress to the IC. Excessive mechanical stress can lead to package cracks, resulting in a reduction in reliability or breakdown of internal IC chip. In addition, depending on the IC, the use of silicon rubber may be prohibited. Check whether the use of silicon rubber is prohibited for the IC you intend to use, or not. For details of power IC heat radiation design and heat sink installation, refer to individual technical datasheets or IC databooks.

RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY , AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY , SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales representative.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY , FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.