TCA62735AFLG MARKTECH | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 12

Technical content

TOSHIBA CMOS INTEGRATED CIRCIUTS SILICON MONOLITHIC TCA62735AFLG Charge Pump type DC/DC Converter for White LED Driver The TCA62735AFLG is a charge pump type DC/DC Converter specially designed for constant current driving of White LED. This IC can outputs LED current 120mA or more to 2.8-4.2V input. This IC observes the power-supply voltage and the output voltage, and does an automatic change to the best of step up mode 1, 1.5 or 2 times. It is possible to prolong the battery longevity to its maximum. This IC is especially for driving back light white LEDs in LCD of PDA, Cellular Phone, or Handy Terminal Equipment. Characteristics

  • Fabricating with CMOS Process
  • Package : QFN16 (4mm × 4mm × 0.8mm)
  • Input Voltage : 2.8V (Min)
  • Output Voltage : 4.2V (Min)
  • Switching Frequency : 1MHz(Typ.)
  • Output Drive Current Capability : Greater than 120mA
  • 4 Channels Built in Constant Sink Current Drivers
  • Sink Current Adjustment by External Resistance
  • Soft Start Function Output Open Detection Function Integrated protection circuit TSD (Thermal Shut Down) Pin Assignment (top view) Weight: 0.016 g (Typ.) EN CTL0 CTL1 CTL2 GND C2+ C2− C1− ILED1 ILED2 ILED3 ILED4 ISET VOUT VIN C1+ 30mA VIN=2.8~4.2V 1.0µF C1– C1+ EN CTL0 CTL1 CTL2 VIN GND 1.0µF COUT 1.0µF CIN 2.2µF RSET 8kΩ ISET 30mA 30mA 30mA ILED4 ILED3 ILED2 ILED1 VOUT C2– C2+ Application Diagram Web: www.marktechopto.com | Email: info@marktechopto.com Company Headquarters

3 Northway Lane North

Latham, New York 12110 Toll Free: 800.984.5337 Fax: 518.785.4725 California Sales Office:

950 South Coast Drive, Suite 225

Costa Mesa, California 92626 Toll Free: 800.984.5337 Fax: 714.850.9314

This datasheet is tentative, the values and contents are subject to change without any notice. 2005-04-26 (Page 2 of 12) Block Diagram Explanation of Terminals No Symbol Function EN Logic input terminal. (input a chip enable signal) EN = ”H” → Operation mode, EN = ”L” → Shutdown mode CTL0 CTL1 CTL2 Logic input terminal. (Selection of an output number) Please refer to the truth table on page 10. ISET Resistance connection terminal for setting up output current. VOUT Output terminal. VIN Power supply terminal. C1+ C1− C2− C2+ Capacitance connection terminal for charge pump. GND GND terminal. ILED4 ILED3 ILED2 ILED1 Constant Sink Current Driver terminal. ILED(mA) = 0.61V × 400 / RSET(kΩ) ISET Feed Back GND Constant Current Regulator ILED1 ILED 2 ILED 3 ILED 4 C1+ C1− VIN VOUT C2+ C2− Feed Back Circuit Up Converting Time Change CTL0 EN CTL1 CTL2 Control Logic ON/OFF

This datasheet is tentative, the values and contents are subject to change without any notice. 2005-04-26 (Page 3 of 12) Absolute Maximum Ratings (Topr = 25°C if without notice) Characteristics Symbol Ratings Unit P o w e r S u p p l y V o l t a g e VIN −0.3~+6.0 V I n p u t V o l t a g e Vin −0.3~VIN+0.3(*1) mA O u t p u t C u r r e n t IOUT 200 mA/ch O p e r a t i n g T e m p e r a t u r e Topr −40~+85 S t o r a g e T e m p e r a t u r e Tstg −55~+150 J u n c t i o n T e m p e r a t u r e Tj 150 *1 : please do not exceed 6V. Recommended Operating Condition (Topr=-40°C to 85°C if without notice) Characteristics Symbol Test Condition Min Typ Max Unit P o w e r S u p p l y VIN 2.8 4.2 V L o g i c I n p u t V o l t a g e Vin EN,CTL0,CTL1,CTL2 VIN V I n p u t R i p p l e V o l t a g e VIN(ripple) mVpp Capacitance for Charge Pump C1,C2 0.8 1.0 2.2 µF C a p a c i t a n c e f o r o u t p u t COUT 0.8 2.2 4.7 µF C a p a c i t a n c e f o r i n p u t CIN 0.8 2.2 10.0 µF R S E T r e s i s t a n c e RSET kΩ

Electrical Characteristics

DC-DC Regulator part (VIN=3.6V, Topr=-40 to 85°C, if it is not specified.) C h a r a c t e r i s t i c s Symbol Test Condition Min Typ Max Unit 2 time up converting 120 1.5 time up converting 120 O u t p u t C u r r e n t A b i l i t y IOUT(MAX) 1 time up converting 120 mA C o n s u m p t i o n C u r r e n t IIN(ON) IOUT=5mA mA Stand By Consumption Current IIN(OFF) IOUT=0mA EN=”L” µA H i g h VIH EN, CTL0,CTL1,CTL2 VIN=2.8V to 4.2V 0.7VIN L o g i c I n p u t V o l t a g e L o w VIL EN,CTL0,CTL1,CTL2 VIN=2.8V to 4.2V 0.3VIN V L o g i c I n p u t C u r r e n t Ileak EN,CTL0,CTL1,CTL2 0.1 µA C l o c k F r e q u e n c y fOSC 1000 kHz T O T A L R O N RON 1.5 time up converting Ω 1 X m o d e t o 1 . 5 X m o d e t r a n s i t i o n v o l t a g e VTRANS1X LED Vf=3.6V,IOUT=80mA VIN falling 4.0 V

This datasheet is tentative, the values and contents are subject to change without any notice. 2005-04-26 (Page 4 of 12) Constant Current Driver part (VIN=2.8V to 4.2V, Topr=-40 to 85°C, if it is not specified.) Characteristics Symbol Test Condition Min Typ Max Unit RSET=47kΩ 5.1 RSET=12kΩ 19.6 Constant Current Drive Setting ILED1~4 RSET=8.2kΩ mA ISET Terminal Output Voltage VSET RSET=8.2kΩ 0.61 V Between Chs |ILED-LED-ERR| 2.5 Constant Current A c c u r a c y Between ICs |ILED-ERR| Constant Sink Current Supply Voltage Regulation |∆ILED| VIN=3.6V center VIN=2.8 to 4.2V IOUT=80mA CIN=2.2µF O u t p u t l e a k a g e c u r r e n t ILEAK1~4 EN="H" ILED1 to4="OFF" µA Reference data Quiescent Current vs. IOUT Current 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 100 120 IOUT Current (mA) Quiescent Current (mA) VIN=2.7V VIN=3.6V VIN=4.3V Efficiency vs. VIN 100 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 4.3 VIN (V) Efficiency (%) 4LEDs at 20mA LED Vf=3.51V Quiescent Current vs. VIN 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 VIN (V) Quiescent Current (mA) 4LEDs at 30mA 4LEDs at 20mA 4LEDs at 5mA Efficiency vs. IOUT 100 100 120 IOUT (mA) Efficiency (%) VIN=3.0V VIN=3.3V VIN=3.6V VIN=3.9V VIN=4.2V LED Vf=3.3V

This datasheet is tentative, the values and contents are subject to change without any notice. 2005-04-26 (Page 5 of 12) Evaluation Circuit IOUT Current vs. VIN 100 120 140 160 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 VIN (V) IOUT Current (mA) 4LEDs at 30mA 4LEDs at 20mA 4LEDs at 5mA ILED Current vs. VIN 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 VIN (V) ILED Current (mA) 4LEDs at 30mA 4LEDs at 20mA 4LEDs at 5mA 1x Mode Transition Voltage vs. ILED Current 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 ILED Current (mA) VIN_transition voltage (V) LED Vf=3.2V,4ch ON LED Vf=3.4V,4ch ON LED Vf=3.6V,4ch ON C1- C2- C2+ CTL2 CTL1 CTL0 EN ILED4 ILED3 ILED2 ILED1 RSET=8.2kΩ to 47kΩ CIN=2.2µF COUT=1.0µF C1=1.0µF VIN=2.8V to 4.2V C2=1.0µF C1+ VIN VOUT ISET V A A V GND

  • Evaluation conditions LED : NACW215 (NICHIA Corp.) CIN : C1608JB1C225K (TDK Corp.) COUT : C1608JB1C105K (TDK Corp.) : C1608JB1C105K (TDK Corp.) : C1608JB1C105K (TDK Corp.)

This datasheet is tentative, the values and contents are subject to change without any notice. 2005-04-26 (Page 6 of 12) Method of setting ILED The current of the terminal ILED1 to 4 is set by resistance RSET connected with the terminal ISET. ILED can be set according to the next expression. RSET vs. ILED RSET（kΩ） ILED(mA) C1- C2- C2+ GND CTL2 CTL1 CTL0 EN RSET CIN=2.2µF COUT=1.0µF C1=1.0µF VIN=2.8V to 4.2V C2=1.0µF ILED4 ILED3 ILED2 ILED1 C1+ VIN VOUT ISET 400 × 0.61[V] RSET[kΩ] ILED[mA] =

This datasheet is tentative, the values and contents are subject to change without any notice. 2005-04-26 (Page 7 of 12) Method of Current Dimming control 1) Input PWM signal to SHDN terminal ILED can be set according to the next expression. fPWM will recommend 100Hz. *In this PWM control operation, This IC repeats ON/OFF. In this result, rush current is occur when ON timing with supplying charge to C2OUT. Please note it. 0.61[V] × 400 × ON Duty[%] RSET[kΩ] ILED[mA] = C1- C2- C2+ GND CTL2 CTL1 CTL0 EN ILED4 ILED3 ILED2 ILED1 RSET=12kΩ CIN=2.2µF COUT=1.0µF C1=1.0µF VIN=3.6V PWM signal fPWM=100Hz, ON Duty50% C2=1.0µF C1+ VIN VOUT ISET Ch1 : VPWM Ch2 : IIN Ch3 : VOUT Ch4 : IOUT PWM Duty vs. IOUT 100 100 PWM Duty (%) IOUT (mA)

This datasheet is tentative, the values and contents are subject to change without any notice. 2005-04-26 (Page 8 of 12) 2) Input analog voltage to ISET terminal 1. Precondition

  • Please set the range of the analog voltage input by 0 to 0.61V. 2. The maximum current is defined as αmA. 3. A minimum current is defined as βmA. 4. ILED can be set according to the next expression. R1[kΩ] + R2[kΩ] R1[kΩ] × R2[kΩ] R2[kΩ] β[mA] - α[mA] 0.61[V] ILED[mA] = VADJ[V] × + α[mA] ILED vs. VADJ 0.2 0.4 0.6 VADJ (V) ILED (mA) *This method is without repeating IC ON/OFF, and no need to consider holding rash current. C1- C2- C2+ GND CTL2 CTL1 CTL0 EN ILED4 ILED3 ILED2 ILED1 R2=47kΩ CIN=2.2µF COUT=1.0µF C1=1.0µF VIN=2.8V to 4.2V C2=1.0µF C1+ VIN VOUT ISET R1=16kΩ VADJ=0V to 0.61V

This datasheet is tentative, the values and contents are subject to change without any notice. 2005-04-26 (Page 9 of 12) 3) Input Logic signal User can adjust ILED with Logic signal input as indicated in recommended circuit. The Resistor connected the ON-State Nch MOS Drain and RSET determines ILED. ILED can be set according to the next expression. About combined resistance R[kΩ] R[kΩ] ON ON ON OFF OFF ON OFF OFF *This method is without repeating IC ON/OFF, and no need to consider holding rash current. 400 × 0.61[V] R[kΩ] ILED[mA] = RSET C1- C2- C2+ GND CTL2 CTL1 CTL0 EN ILED4 ILED3 ILED2 ILED1 COUT=1.0µF C1=1.0µF C1+ VIN VOUT ISET C2=1.0µF CIN=2.2µF VIN=2.8V to 4.2V RSET[kΩ] × R1[kΩ] × R2[kΩ] R1[kΩ]×RSET[kΩ] + R2[kΩ]×RSET[kΩ] + R1[kΩ]×R2[kΩ] RSET[kΩ] × R1[kΩ] RSET[kΩ] + R1[kΩ] RSET[kΩ] × R2[kΩ] RSET[kΩ] + R2[kΩ] RSET[kΩ]

This datasheet is tentative, the values and contents are subject to change without any notice. 2005-04-26 (Page 10 of 12) Selection of an output number by CTL0, CTL1, and CTL2 Terminal Truth Table Input Output CTL2 CTL1 CTL0 EN ILED4 ILED3 ILED2 ILED1 L L L H OFF OFF OFF ON L L H H OFF OFF ON OFF L H L H OFF ON OFF OFF L H H H ON OFF OFF OFF H L L H OFF OFF ON ON H L H H OFF ON ON ON H H L H ON ON ON ON H H H H OFF OFF OFF OFF L L L L OFF OFF OFF OFF L L H L OFF OFF OFF OFF L H L L OFF OFF OFF OFF L H H L OFF OFF OFF OFF H L L L OFF OFF OFF OFF H L H L OFF OFF OFF OFF H H L L OFF OFF OFF OFF H H H L OFF OFF OFF OFF *Soft Start Function This device is integrated Soft start function. When the power supply is ON or output is started to operate, the transition time is controlled in order to decrease the rush current. (Reference data: The output voltage is time 200µs of made from 0 to 4.0V at the VIN=2.8V time.) *Inrush Current of Input Current The inrush current flows when start-up and mode switching. (Reference data: Inrush current at CE1/CE2="L" to “H” is 500mA.) *Thermal Shut Down Function This device has Thermal Shutdown Function to protect from thermal damage when the output is shorted. The temperature to operate this function is set around from 140 to 160°C. (This is not guaranteed Value.) *The Selection of Capacitor for Charge Pump, Input and Output The input capacitor is effective to decrease the impedance of power supply and also input current is averaged. The input capacitor should be selected by impedance of power supply, it is better to choose with lower ESR (Equivalent Series Resistor). (i.e. ceramic capacitor etc.) Regarding to the capacitance values, it is recommended to choose in the range from 0.8 µF to 10 µF, however larger than 2.2 µF should be better. The output capacitor is effective to decrease the ripple noise of the output line. Also, it is better to choose the capacitor.) Regarding to the capacitance values, it is recommended to choose in the range from 0.8 µF to 4.7 µF, however larger than 2.2 µF should be better. The capacitor for charge pump operation is also selected the capacitor with low ESR. .) Regarding to the capacitance values, it is recommended to choose in the range from 0.8 µF to 2.2 µF, however larger than 1.0 µF should be better.

This datasheet is tentative, the values and contents are subject to change without any notice. 2005-04-26 (Page 11 of 12) Package Dimensions QFN16 Unit : mm Weight: 0.016 g (Typ.) 4.00Typ. 3.75Typ. 3.75Typ. 0.9MAX 0.65Typ. 0.60 0.25MIN 0.28 4.00Typ. 0.07 0.05 0.15 0.10

This datasheet is tentative, the values and contents are subject to change without any notice. 2005-04-26 (Page 12 of 12)

  • The information contained herein is subject to change without notice.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
  • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
  • The products described in this document are subject to the foreign exchange and foreign trade laws.
  • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619EBA RESTRICTIONS ON PRODUCT USE Regarding solder ability, the following conditions have been confirmed.
  • Solder ability (1) Use of Sn-63Pb solder bath
  • solder bath temperature = 230°C, dipping time = 5 seconds, number of times = once, use of R-type flux (2) Use of Sn-3.0Ag-0.5Cu solder bath
  • solder bath temperature = 245°C, dipping time = 5 seconds, number of times = once, use of R-type flux
  • Utmost care is necessary in the design of the output line, VCC, COMMON and GND line since IC may be destroyed due to short-circuit between outputs, air contamination fault, or fault by improper grounding.
  • Do not insert devices in the wrong orientation. Make sure that the positive and negative terminals of power supplies are connected correctly. Otherwise, the rated maximum current of power dissipation may be exceeded and the device may break down or undergo performance degradation, causing it to catch fire or explode and resulting in injury.
  • Please take care that IC might be destroyed in case external components were destroyed or not connected exactly. NOTES Regarding solder ability