DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 14

Technical content

Features

  • Integrated Gate-t o-source Resistor
  • Integrated Gate-to-source Zener Diode
  • Low Threshold
  • Low On-resistance
  • Low Input Capacitance
  • Fast Switching Speeds
  • Free from Secondary Breakdown
  • Low Input and Output Leakage
  • Independent Electrically Iso lated N-channel and P-channel

Applications

  • High-voltage Pulsers
  • Amplifiers
  • B u f f e r s
  • Piezoelectric Transducer Drivers
  • General Purpose Line Drivers
  • Logic-level Interfaces General Description The TC6320 consists of high-voltage, low-threshold N-chan nel and P-channel MOSFETs in 8-lead SOIC and DFN packages. Both MOSFETs have integrated gate-to-source resistors and gate-to-source Zener diode clamps which are desired for high-voltage pulser applications. It is a complimentary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pair, which utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wid e range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. Package Type 8-lead SOIC (Top view) See Table 2-1 and Table 2-2 for pin information. SN GN SP GP DN DN DP DP 5-lead DFN (Top view) SN GN GP SP DN DN DP DP DN DP s N-Channel and P-Channel Enhancement-Mode MOSFET Pair

DS20005697A-page 2  2017 Microchip Technology Inc. Functional Block Diagram N-Channel P-Channel DN DN DP DP SN GN GP SP

 2017 Microchip Technology Inc. DS20005697A-page 3 TC6320 Typical Application Circuit VSS VL VDD VH INA INB OE -100V +100V TC6320 10nF 10nF MD12xx, MD17xx, or MD18xx

DS20005697A-page 4  2017 Microchip Technology Inc.

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings† † Notic e: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. N-CHANNEL ELECTRICAL CHARACTERISTICS Electrical Specifications: TA = TJ = 25°C unless otherwise specified. Parameter Sym. Min. Typ. Max. Unit Conditions DC PARAMETER (Note 1 un less otherwise specified) Drain-to-source Breakdown Voltage BVDSS 200 — — V VGS = 0V, ID = 2 mA Gate Threshold Voltage VGS(th) 1 — 2 V VGS = VDS, ID = 1 mA Change in VGS(th) with Temperature ∆VGS(th) — — –4.5 mV/°C VGS = VDS, ID = 1 mA (Note 2) Gate-to-source Sh unt Resistor RGS 10 — 50 kΩ IGS = 100 µA Gate-to-Source Zener Voltage VZGS 13.2 — 25 V IGS = 2 mA Zero-gate Voltage Drain Current IDSS — — 10 µA VDS = Maximum rating,  VGS = 0V — — 1 mA VDS = 0.8 Maximum rating, VGS = 0V, TA = 125°C (Note 2) On-state Drain Current ID(ON) 1 — — A VGS = 4.5V, VDS = 25V 2 — — VGS = 10V, VDS = 25V Static Drain-to-source On-state  Resistance RDS(ON) — — 8 Ω VGS = 4.5V, ID = 150 mA — — 7 VGS = 10V, ID = 1A Change in RDS(ON) with Temperature ∆RDS(ON) — — 1 %/°C VGS = 4.5V, ID = 150 mA (Note 2) AC PARAMETER (Note 2) Forward Transconductance GFS 400 — — mmho VDS = 25V, ID = 500 mA Input Capacitance CISS — — 110 pF VGS = 0V, VDS = 25V, f = 1 MHz Common Source Output Capacitance COSS — — 60 pF Reverse Transfer Capacitance CRSS — — 23 pF Turn-on Delay Time td(ON) — — 10 ns VDD = 25V, ID = 1A, RGEN = 25Ω Rise Time tr — — 15 ns Turn-off Delay Time td(OFF) — — 20 ns Fall Time tf — — 15 ns DIODE PARAMETER Diode Forward Voltage Drop VSD — — 1.8 V VGS = 0V, ISD = 500 mA (Note 1) Reverse Recovery Time trr — 300 — ns VGS = 0V, ISD = 500 mA (Note 2) Note 1: All DC p arameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle. 2: S pecification is obtained by characterization and is not 100% tested.

P-CHANNEL ELECTRICAL CHARACTERISTICS Electrical Specifications: TA = TJ = 25°C unless otherwise specified. Parameter Sym. Min. Typ. Max. Unit Conditions DC PARAMETER (Note 1 un less otherwise specified) Drain-to-source Breakdown Voltage BVDSS –200 — — V VGS = 0V, ID = –2 mA Gate Threshold Voltage VGS(th) –1 — –2.4 V VGS = VDS, ID = –1 mA Change in VGS(th) with Temperature ∆VGS(th) — — 4.5 mV/°C VGS = VDS, ID = –1 mA (Note 2) Gate-to-source Sh unt Resistor RGS 10 — 50 kΩ IGS = 100 µA Gate-to-Source Zener Voltage VZGS 13.2 — 25 V IGS = –2 mA Zero-gate Voltage Drain Current IDSS — — –10 µA VDS = Maximum rating,  VGS = 0V — — –1 mA VDS = 0.8 Maximum rating, VGS = 0V, TA = 125°C (Note 2) On-state Drain Current ID(ON) –1 — — A VGS = –4.5V, VDS = –25V –2 — — VGS = –10V, VDS = –25V Static Drain-to-source On-state  Resistance RDS(ON) — — 10 Ω VGS = –4.5V, ID = –150 mA — — 8 VGS = –10V, ID = –1A Change in RDS(ON) with Temperature ∆RDS(ON) — — 1 %/°C VGS = –10V, ID = –200 mA (Note 2) AC PARAMETER (Note 2) Forward Transconductance GFS 400 — — mmho VDS = –25V, ID = –500 mA Input Capacitance CISS — — 200 pF VGS = 0V, VDS = –25V, f = 1 MHz Common Source Output Cap acitance COSS — — 55 pF Reverse Transfer Capacitance CRSS — — 30 pF Turn-on Delay Time td(ON) — — 10 ns VDD = –25V, ID = –1A, RGEN = 25Ω Rise Time tr — — 15 ns Turn-off Delay Time td(OFF) — — 20 ns Fall Time tf — — 15 ns DIODE PARAMETER Diode Forward Voltage Drop VSD — — –1.8 V VGS = 0V, ISD = –500 mA (Note 1) Reverse Recovery Time trr — 300 — ns VGS = 0V, ISD = –500 mA (Note 2) Note 1: All DC p arameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle. 2: S pecification is obtained by characterization and is not 100% tested. TEMPERATURE SPECIFICATIONS Electrical Characteristics: Unless otherwise specified, for all specifications TA =TJ = +25°C. Parameter Sym. Min. Typ. Max. Unit Conditions TEMPERATURE RANGE Operating Ambient Temperature TA –55°C — +150 °C Storage Temperature TS –55°C — +150 °C PACKAGE THERMAL RESISTANCE 8-lead DFN JA — 44 — °C/W Note 1 8-lead SOIC JA — 101 — °C/W Note 1  2017 Microchip Technology Inc. DS20005697A-page 5 TC6320 Note 1: 1 oz., four-layer, 3” x 4” PCB

DS20005697A-page 6  2017 Microchip Technology Inc.

2.0 PIN DESCRIPTION

Table 2-1 and Table 2-2 show the description of pins in TC6320 8-lead DFN and 8-lead SOIC, respectively. Refer to Package Types for the location of pins. TABLE 2-1: 8-LEAD DFN PIN FUNCTION TABLE Pin Number Pin Name Description

1 SN Source N-channel

2 GN Gate N-channel

3 GP Gate P-channel

4 SP Source P-channel

5 DP Drain P-channel

6 DP Drain P-channel

7 DN Drain N-channel

8 DN Drain N-channel

TABLE 2-2: 8-LEAD SOIC FUNCTION TABLE Pin Number Pin Name Description

3 SP Source P-channel

4 GP Gate P-channel

 2017 Microchip Technology Inc. DS20005697A-page 7 TC6320

3.0 FUNCTIONAL DESCRIPTION

Figure 3-1 and Figure 3-2 illustrate the switching waveforms and test circuits for TC6320. 10V VDD Input Output 10% 90% 90% 10% 90% 10% RGEN Input Pulse Generator VDD RL D.U.T OUTPUT tr tftd(ON) t(ON) td(OFF) t(OFF) FIGURE 3-1: N-Channel Switching Waveforms and Test Circuit. RGEN Input Pulse Generator VDD RL D.U.T OUTPUT -10V VDD Input Output tr tftd(ON) t(ON) 90% 10% 90% 10% 10% 90% td(OFF) t(OFF) FIGURE 3-2: P-Channel Switching Waveforms and Test Circuit. PRODUCT SUMMARY BVDSS/BVDGS (V) RDS(ON) (Maximum) (Ω) N-Channel P-Channel N-Channel P-Channel 200 –200 7 8

DS20005697A-page 8  2017 Microchip Technology Inc.

4.0 PACKAGING INFORMATION

4.1 Package Marking Information

Legend: XX...X Product Code or Customer-specific information  Y Year code (last digit of calendar year)  YY Year code (last 2 digits of calendar year)  WW Week code (week of January 1 is week ‘01’)  NNN Alphanumeric traceability code  Pb-free JEDEC ® designator for Matte Tin (Sn) * This package is Pb-free. The Pb-free JEDEC designator ( ) can be found on the outer packaging for this package. Note: In the event the full Microchip part num ber cannot be marked on one line, it will be carried over to the next line, th us limiting the number of available characters for product code or customer-specific information. Package may or not include the corporate logo. 8-lead DFN Example NNN XXXXXXX XXXXXXX YYWWe3 222 TC6320 1715e3 8-lead SOIC Example NNN XXXXXXX YYWW 555 TC6320TG 1727e3e3

Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.  2017 Microchip Technology Inc. DS20005697A-page 9 TC6320

Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. TC6320 DS20005697A-page 10  2017 Microchip Technology Inc.

 2017 Microchip Technology Inc. DS20005697A-page 11 TC6320 APPENDIX A: REVISION HISTORY Revision A (October 2017)

  • Converted Supertex Doc# DSFP- TC6320 to Microchip DS20005697A
  • Changed the package marking format
  • Changed the quantity of the 8-lead DFN K6 package from 3000/Reel to 3300/Reel
  • Changed the quantity of the 8-lead SOIC TG package from 2000/Reel to 3300/Reel
  • Made minor text changes throughout the docu - ment

DS20005697A-page 12  2017 Microchip Technology Inc. PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. Examples: a) TC6320K6-G: N-Channel and P-Channel Enhancement-Mode MOSFET Pair, 8‐lead (4x4) VDFN, 3300/Reel b) TC6320TG-G: N-Channel and P-Channel Enhancement-Mode MOSFET Pair, 8-lead SOIC, 3300/Reel PART NO. Device Device: TC6320 = N-Channel and P-Channel Enhancement- Mode MOSFET Pair Packages: K6 = 8-lead (4x4) VDFN TG = 8-lead SOIC Environmental: G = Lead (Pb)-free/RoHS-compliant Package Media Type: (blank) = 3300/Reel for a K6 Package = 3300/Reel for a TG Package XX Package - X - X Environmental Media Type Options

 2017 Microchip Technology Inc. DS20005697A-page 13 Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application me ets with your specifications. MICROCHIP MAKES NO RE PRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY , PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE . Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting fr om such use. No licenses are conveyed, implicitly or ot herwise, under any Microchip intellectual property rights unless otherwise stated. Trademarks The Microchip name and logo, the Microchip logo, AnyRate, AVR, AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KEELOQ, KEELOQ logo, Kleer, LANCheck, LINK MD, maXStylus, maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip Designer, QTouch, RightTouch, SAM-BA, SpyNIC, SST, SST Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. ClockWorks, The Embedded Control Solutions Company, EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and Quiet-Wire are registered trademarks of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo, CodeGuard, CryptoAuthentication, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP , Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, Mindi, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PureSilicon, QMatrix, RightTouch logo, REAL ICE, Ripple Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2017, Microchip Technology Incorporated, All Rights Reserved. ISBN: 978-1-5224-2207-5 Note the following details of the code protection feature on Microchip devices:

  • Microchip products meet the specification cont ained in their particular Microchip Data Sheet.
  • Microchip believes that its family of products is one of the mo st secure families of its kind on the market today, when used in the intended manner and under normal conditions.
  • There are dishonest and possibly illegal meth ods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
  • Microchip is willing to work with the customer who is concerned about the integrity of their code.
  • Neither Microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC ® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 ==

DS20005697A-page 14  2017 Microchip Technology Inc. AMERICAS Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://www.microchip.com/ support Web Address: www.microchip.com Atlanta Duluth, GA Tel: 678-957-9614 Fax: 678-957-1455 Austin, TX Tel: 512-257-3370 Boston Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Novi, MI Tel: 248-848-4000 Houston, TX Tel: 281-894-5983 Indianapolis Noblesville, IN Tel: 317-773-8323 Fax: 317-773-5453 Tel: 317-536-2380 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Tel: 951-273-7800 Raleigh, NC Tel: 919-844-7510 New York, NY Tel: 631-435-6000 San Jose, CA Tel: 408-735-9110 Tel: 408-436-4270 Canada - Toronto Tel: 905-695-1980 Fax: 905-695-2078 ASIA/PACIFIC Asia Pacific Office Suites 3707-14, 37th Floor Tower 6, The Gateway Harbour City, Kowloon Hong Kong Tel: 852-2943-5100 Fax: 852-2401-3431 Australia - Sydney Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 China - Beijing Tel: 86-10-8569-7000 Fax: 86-10-8528-2104 China - Chengdu Tel: 86-28-8665-5511 Fax: 86-28-8665-7889 China - Chongqing Tel: 86-23-8980-9588 Fax: 86-23-8980-9500 China - Dongguan Tel: 86-769-8702-9880 China - Guangzhou Tel: 86-20-8755-8029 China - Hangzhou Tel: 86-571-8792-8115 Fax: 86-571-8792-8116 China - Hong Kong SAR Tel: 852-2943-5100 Fax: 852-2401-3431 China - Nanjing Tel: 86-25-8473-2460 Fax: 86-25-8473-2470 China - Qingdao Tel: 86-532-8502-7355 Fax: 86-532-8502-7205 China - Shanghai Tel: 86-21-3326-8000 Fax: 86-21-3326-8021 China - Shenyang Tel: 86-24-2334-2829 Fax: 86-24-2334-2393 China - Shenzhen Tel: 86-755-8864-2200 Fax: 86-755-8203-1760 China - Wuhan Tel: 86-27-5980-5300 Fax: 86-27-5980-5118 China - Xian Tel: 86-29-8833-7252 Fax: 86-29-8833-7256 ASIA/PACIFIC China - Xiamen Tel: 86-592-2388138 Fax: 86-592-2388130 China - Zhuhai Tel: 86-756-3210040 Fax: 86-756-3210049 India - Bangalore Tel: 91-80-3090-4444 Fax: 91-80-3090-4123 India - New Delhi Tel: 91-11-4160-8631 Fax: 91-11-4160-8632 India - Pune Tel: 91-20-3019-1500 Japan - Osaka Tel: 81-6-6152-7160 Fax: 81-6-6152-9310 Japan - Tokyo Tel: 81-3-6880- 3770 Fax: 81-3-6880-3771 Korea - Daegu Tel: 82-53-744-4301 Fax: 82-53-744-4302 Korea - Seoul Tel: 82-2-554-7200 Fax: 82-2-558-5932 or 82-2-558-5934 Malaysia - Kuala Lumpur Tel: 60-3-6201-9857 Fax: 60-3-6201-9859 Malaysia - Penang Tel: 60-4-227-8870 Fax: 60-4-227-4068 Philippines - Manila Tel: 63-2-634-9065 Fax: 63-2-634-9069 Singapore Tel: 65-6334-8870 Fax: 65-6334-8850 Taiwan - Hsin Chu Tel: 886-3-5778-366 Fax: 886-3-5770-955 Taiwan - Kaohsiung Tel: 886-7-213-7830 Taiwan - Taipei Tel: 886-2-2508-8600 Fax: 886-2-2508-0102 Thailand - Bangkok Tel: 66-2-694-1351 Fax: 66-2-694-1350 EUROPE Austria - Wels Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 Finland - Espoo Tel: 358-9-4520-820 France - Paris France - Saint Cloud Germany - Garching Tel: 49-8931-9700 Germany - Haan Tel: 49-2129-3766400 Germany - Heilbronn Tel: 49-7131-67-3636 Germany - Karlsruhe Tel: 49-721-625370 Germany - Munich Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 Germany - Rosenheim Tel: 49-8031-354-560 Israel - Ra’anana Tel: 972-9-744-7705 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 Italy - Padova Tel: 39-049-7625286 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 Norway - Trondheim Tel: 47-7289-7561 Poland - Warsaw Tel: 48-22-3325737 Romania - Bucharest Tel: 40-21-407-87-50 Spain - Madrid Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 Sweden - Gothenberg Tel: 46-31-704-60-40 Sweden - Stockholm Tel: 46-8-5090-4654 UK - Wokingham Tel: 44-118-921-5800 Fax: 44-118-921-5820 Worldwide Sales and Service 11/07/16