TC55_05 MICROCHIP | Alldatasheet

Document overview

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Technical content

Features

  • Low Dropout Voltage: 120 mV (typ) at 100 mA, 380 mV (typ) at 200 mA
  • High Output Current: 250 mA (VOUT = 5.0V)
  • High Accuracy Output Voltage: ±2% (max) (±1% Semi-Custom Version)
  • Low Power Consumption: 1.1 µA (typ)
  • Low Temperature Drift: ±100 ppm/°C (typ)
  • Excellent Line Regulation: 0.2%/V (typ)
  • Package Options: 3-Pin SOT-23A, 3-Pin SOT-89 and 3-Pin TO-92
  • Short-Circuit Protection
  • Standard Output Voltage Options: 1.2V, 1.8V,

Applications

  • Battery-Powered Devices
  • Cameras and Portable Video Equipment
  • Pagers and Cellular Phones
  • Solar Powered Instruments
  • Consumer Products Package Types General Description The TC55 Series is a collection of CMOS low dropout, positive voltage regulators that can source up to 250 mA of current, with an extremely low input-output voltage differential of 380 mV (typ) at 200 mA. The TC55’s low dropout voltage, combined with the low current consumption of only 1.1 µA (typ), makes it ideal for battery operation. The low voltage differential (drop- out voltage) extends the battery operating lifetime. It also permits high currents in small packages when operated with minimum VIN – VOUT differentials. The circuit also incorporates short-circuit protection to ensure maximum reliability. Functional Block Diagram VIN GND VOUT TC55 GND VIN VOUT TC55 3-Pin SOT-23A 3-Pin SOT-89 3-Pin TO-92 1 2 3 VOUT VIN GND Note: 3-Pin SOT-23A is equivalent to the EIAJ SC-59. VIN Bottom View VIN VOUT GND Short-Circuit Protection Voltage Reference 1 µA Low Dropout Positive Voltage Regulator Obsolete Device

© 2005 Microchip Technology Inc. 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† Continuous Power Dissipation: † Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. PIN FUNCTION TABLE TC55RP50: ELECTRICAL CHARACTERISTICS TC55RP40: ELECTRICAL CHARACTERISTICS Symbol

Description

Electrical Specifications: Unless otherwise specified, VOUT(S) = 5.0V, TA = +25°C (see Note 1). Parameters Sym Min Typ Max Units Conditions Output Voltage VOUT(A) 4.90 5.0 5.10 V IOUT = 40 mA VIN = 6.0V Maximum Output Current IOUTMAX 250 mA VIN = 6.0V, VOUT(A) ≥ 4.5V Load Regulation ΔVOUT mV VIN = 6.0V, 1 mA ≤ IOUT ≤ 100 mA I/O Voltage Difference VDIF 120 380 300 600 mV IOUT = 100 mA IOUT = 200 mA Current Consumption ISS 1.1 3.0 µA VIN = 6.0V Voltage Regulation VOUT(A)•100 ΔVIN•VOUT(S) 0.2 0.3 %/V IOUT = 40 mA, 6.0V ≤ VIN ≤ 10.0V Input Voltage VIN V Temperature Coefficient of Output Voltage ΔVOUT(A)•106 VOUT(S)•ΔTA ±100 ppm/°C IOUT = 40 mA, -40°C ≤ TA ≤ +85°C Long-Term Stability 0.5 TA = +125°C, 1000 Hours Note VOUT(S): Preset value of output voltage; VOUT(A): Actual value of output voltage; VDIF: Definition of I/O voltage difference = {VIN1 – VOUT(A)}; VOUT(A): Output voltage when IOUT is fixed and VIN = VOUT(S) + 1.0V; VIN1: Input voltage when the output voltage is 98% VOUT(A). Electrical Specifications: Unless otherwise specified, VOUT(S) = 4.0V, TA = +25°C (see Note 1). Parameters Sym Min Typ Max Units Conditions Output Voltage VOUT(A) 3.92 4.0 4.08 V IOUT = 40 mA VIN = 5.0V Maximum Output Current IOUTMAX 200 mA VIN = 5.0V, VOUT(A) ≥ 3.6V Load Regulation ΔVOUT mV VIN = 5.0V, 1 mA ≤ IOUT ≤ 100 mA I/O Voltage Difference VDIF 170 400 330 630 mV IOUT = 100 mA IOUT = 200 mA Current Consumption ISS 1.0 2.9 µA VIN = 5.0V Voltage Regulation VOUT(A)•100 ΔVIN•VOUT(S) 0.2 0.3 %/V IOUT = 40 mA, 5.0V ≤ VIN ≤ 10.0V Input Voltage VIN V Temperature Coefficient of Output Voltage ΔVOUT(A)•106 VOUT(S)•ΔTA ±100 ppm/°C IOUT = 40 mA, -40°C ≤ TA ≤ +85°C Long-Term Stability 0.5 TA = +125°C, 1000 Hours Note VOUT(S): Preset value of output voltage; VOUT(A): Actual value of output voltage; VDIF: Definition of I/O voltage difference = {VIN1 – VOUT(A)}; VOUT(A): Output voltage when IOUT is fixed and VIN = VOUT(S) + 1.0V; VIN1: Input voltage when the output voltage is 98% VOUT(A).

© 2005 Microchip Technology Inc. DS21435F-page 3 TC55 TC55RP33: ELECTRICAL CHARACTERISTICS TC55RP30: ELECTRICAL CHARACTERISTICS Electrical Specifications: Unless otherwise specified, VOUT(S) = 3.3V, TA = +25°C (see Note 1). Parameters Sym Min Typ Max Units Conditions Output Voltage VOUT(A) 3.23 3.30 3.37 V IOUT = 40 mA VIN = 4.3V Maximum Output Current IOUTMAX 150 mA VIN = 4.3V, VOUT(A) ≥ 3.0V Load Regulation ΔVOUT mV VIN = 4.3V, 1 mA ≤ IOUT ≤ 80 mA I/O Voltage Difference VDIF 180 400 360 700 mV IOUT = 80 mA IOUT = 160 mA Current Consumption ISS 1.0 2.9 µA VIN = 4.3V Voltage Regulation VOUT(A)•100 ΔVIN•VOUT(S) 0.2 0.3 %/V IOUT = 40 mA, 4.3V ≤ IOUT ≤ 10.0V Input Voltage VIN V Temperature Coefficient of Output Voltage ΔVOUT(A)•106 VOUT(S)•ΔTA ±100 ppm/°C IOUT = 40 mA, -40°C ≤ TA ≤ +85°C Long-Term Stability 0.5 TA = +125°C, 1,000 Hours Note VOUT(S): Preset value of output voltage; VOUT(A): Actual value of output voltage; VDIF: Definition of I/O voltage difference = {VIN1 – VOUT(A)}; VOUT(A): Output voltage when IOUT is fixed and VIN = VOUT(S) + 1.0V; VIN1: Input voltage when the output voltage is 98% VOUT(A). Electrical Specifications: Unless otherwise specified, VOUT(S) = 3.0V, TA = +25°C (see Note 1). Parameters Sym Min Typ Max Units Conditions Output Voltage VOUT(A) 2.94 3.0 3.06 V IOUT = 40 mA VIN = 4.0V Maximum Output Current IOUTMAX 150 mA VIN = 4.0V, VOUT(A) ≥ 2.7V Load Regulation ΔVOUT mV VIN = 4.0V, 1 mA ≤ IOUT ≤ 80 mA I/O Voltage Difference VDIF 180 400 360 700 mV IOUT = 80 mA IOUT = 160 mA Current Consumption ISS 0.9 2.8 µA VIN = 4.0V Voltage Regulation VOUT(A)•100 ΔVIN•VOUT(S) 0.2 0.3 %/V IOUT = 40 mA, 4.0V ≤ VIN ≤ 10.0V Input Voltage VIN V Temperature Coefficient of Output Voltage ΔVOUT(A)•106 VOUT(S)•ΔTA ±100 ppm/°C IOUT = 40 mA, -40°C ≤ TA ≤ +85°C Long-Term Stability 0.5 TA = +125°C, 1000 Hours Note VOUT(S): Preset value of output voltage; VOUT(A): Actual value of output voltage; VDIF: Definition of I/O voltage difference = {VIN1 – VOUT(A)}; VOUT(A): Output voltage when IOUT is fixed and VIN = VOUT(S) + 1.0V; VIN1: Input voltage when the output voltage is 98% VOUT(A).

© 2005 Microchip Technology Inc. TC55RP25: ELECTRICAL CHARACTERISTICS TC55RP18: ELECTRICAL CHARACTERISTICS Electrical Specifications: Unless otherwise specified, VOUT(S) = 2.5V, TA = +25°C (see Note 1). Parameters Sym Min Typ Max Units Conditions Output Voltage VOUT(A) 2.45 2.5 2.55 V IOUT = 40 mA VIN = 3.5V Maximum Output Current IOUTMAX 125 mA VIN = 3.5V, VOUT(A) ≥ 2.25V Load Regulation ΔVOUT mV VIN = 3.5V, 1 mA ≤ IOUT ≤ 60 mA I/O Voltage Difference VDIF 180 400 360 700 mV IOUT = 60 mA IOUT = 120 mA Current Consumption ISS 1.0 2.8 µA VIN = 3.5V Voltage Regulation VOUT(A)•100 ΔVIN•VOUT(S) 0.2 0.3 %/V IOUT = 40 mA, 3.5V ≤ IOUT ≤ 10.0V Input Voltage VIN V Temperature Coefficient of Output Voltage ΔVOUT(A)•106 VOUT(S)•ΔTA ±100 ppm/°C IOUT = 40 mA, -30°C ≤ TA ≤ +80°C Long-Term Stability 0.5 TA = +125°C, 1,000 Hours Note VOUT(S): Preset value of output voltage; VOUT(A): Actual value of output voltage; VDIF: Definition of I/O voltage difference = {VIN1 – VOUT(A)}; VOUT(A): Output voltage when IOUT is fixed and VIN = VOUT(S) + 1.0V; VIN1: Input voltage when the output voltage is 98% VOUT(A). Electrical Specifications: Unless otherwise specified, VOUT(S) = 1.8V, TA = +25°C (see Note 1). Parameters Sym Min Typ Max Units Conditions Output Voltage VOUT(A) 1.764 1.8 1.836 V IOUT = 0.5 mA VIN = 2.8V Maximum Output Current IOUTMAX 110 mA VIN = 2.8V, VOUT(A) ≥ 1.62V Load Regulation ΔVOUT mV VIN = 2.8V, 1 mA ≤ IOUT ≤ 30 mA I/O Voltage Difference VDIF 300 mV IOUT = 0.5 mA Current Consumption ISS 3.0 µA VIN = 2.8V Voltage Regulation VOUT(A)•100 ΔVIN•VOUT(S) 0.25 %/V IOUT = 0.5 mA, 2.8V ≤ IOUT ≤ 10.0V Input Voltage VIN 6.0 V Temperature Coefficient of Output Voltage ΔVOUT(A)•106 VOUT(S)•ΔTA ±100 ppm/°C IOUT = 0.5 mA, -30°C ≤ TA ≤ +80°C Long-Term Stability 0.5 TA = +125°C, 1,000 Hours Note VOUT(S): Preset value of output voltage; VOUT(A): Actual value of output voltage; VDIF: Definition of I/O voltage difference = {VIN1 – VOUT(A)}; VOUT(A): Output voltage when IOUT is fixed and VIN = VOUT(S) + 1.0V; VIN1: Input voltage when the output voltage is 98% VOUT(A).

© 2005 Microchip Technology Inc. DS21435F-page 5 TC55 TC55RP12: ELECTRICAL CHARACTERISTICS TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise specified, VOUT(S) = 1.2V, TA = +25°C (see Note 1). Parameters Sym Min Typ Max Units Conditions Output Voltage VOUT(A) 1.176 1.200 1.224 V IOUT = 0.5 mA VIN = 2.2V Maximum Output Current IOUTMAX mA VIN = 2.2V, VOUT(A) ≥ 1.08V Load Regulation ΔVOUT mV VIN = 2.2V, 1 mA ≤ IOUT ≤ 30 mA I/O Voltage Difference VDIF 300 mV IOUT = 0.5 mA Current Consumption ISS 3.0 µA VIN = 2.2V Voltage Regulation VOUT(A)•100 ΔVIN•VOUT(S) 0.25 %/V IOUT = 0.5 , 2.2V ≤ IOUT ≤ 10.0V Input Voltage VIN 6.0 V Temperature Coefficient of Output Voltage ΔVOUT(A)•106 VOUT(S)•ΔTA ±100 ppm/°C IOUT = 0.5 mA, -30°C ≤ TA ≤ +80°C Long-Term Stability 0.5 TA = +125°C, 1,000 Hours Note VOUT(S): Preset value of output voltage; VOUT(A): Actual value of output voltage; VDIF: Definition of I/O voltage difference = {VIN1 – VOUT(A)}; VOUT(A): Output voltage when IOUT is fixed and VIN = VOUT(S) + 1.0V; VIN1: Input voltage when the output voltage is 98% VOUT(A). Electrical Specifications: Unless otherwise specified, VOUT(S) = 5.0V, TA = +25°C. Parameters Sym Min Typ Max Units Conditions Temperature Ranges Specified Temperature Range (E) TA -40 +85 ºC Storage Temperature Range TA -65 +150 ºC Package Thermal Resistances Thermal Resistance, 3L-SOT-23A θJA 359 ºC/W Thermal Resistance, 3L-SOT-89 θJA 110 ºC/W When mounted on 1 square inch of copper Thermal Resistance, 3L-TO-92 θJA 131.9 ºC/W

© 2005 Microchip Technology Inc. DS21435F-page 9 TC55 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE 3.1 Ground Terminal (GND) Regulator ground. Tie GND to the negative side of the output and the negative side of the input capacitor. Only the LDO bias current (1 µA typical) flows out of this pin, there is no high current. The LDO output regu- lation is referenced to this pin. Minimize voltage drops between this pin and the minus side of the load. 3.2 Regulated Voltage Output (VOUT) Connect VOUT to the positive side of the load and the positive terminal of the output capacitor. The positive side of the output capacitor should be physically located as close to the LDO VOUT pin as is practical. The current flowing out of this pin is equal to the DC load current. 3.3 Unregulated Supply Input (VIN) Connect the input supply voltage and the positive side of the input capacitor to VIN. The input capacitor should be physically located as close as is practical to VIN. The current flow into this pin is equal to the DC load current, plus the LDO bias current (1 µA typical.) 4.0 DETAILED DESCRIPTION The TC55 is a low quiescent current, precision, fixed- output voltage LDO. Unlike bipolar regulators, the TC55 supply current does not increase proportionally with load current. 4.1 Output Capacitor A minimum of 1 µF output capacitor is required. The output capacitor should have an effective series resis- tance (esr) greater than 0.1Ω and less than 5Ω, plus a resonant frequency above 1 MHz. Larger output capacitors can be used to improve supply noise rejec- tion and transient response. Care should be taken when increasing COUT to ensure that the input imped- ance is not high enough to cause high input impedance oscillation. 4.2 Input Capacitor A 1 µF input capacitor is recommended for most applications when the input impedance is on the order of 10Ω. Larger input capacitance may be required for stability when operating off of a battery input, or if there is a large distance from the input source to the LDO. When large values of output capacitance are used, the input capacitance should be increased to prevent high source impedance oscillations. Pin No. Symbol

© 2005 Microchip Technology Inc. 5.0 THERMAL CONSIDERATIONS 5.1 Power Dissipation The amount of power dissipated internal to the low dropout linear regulator is the sum of the power dissi- pation within the linear pass device (P-Channel MOS- FET) and the quiescent current required to bias the internal reference and error amplifier. The internal lin- ear pass device power dissipation is calculated by mul- tiplying the voltage across the linear device by the current through the device. EQUATION The internal power dissipation, as a result of the bias current for the LDO internal reference and error amplifier, is calculated by multiplying the ground or quiescent current by the input voltage. EQUATION The total internal power dissipation is the sum of PD (Pass Device) and PD (Bias). EQUATION For the TC55, the internal quiescent bias current is so low (1 µA typical) that the PD (Bias) term of the power dissipation equation can be ignored. The maximum power dissipation can be estimated by using the maximum input voltage and the minimum output voltage to obtain a maximum voltage differential between input and output. The next step would be to multiply the maximum voltage differential by the maximum output current. EQUATION Given: VIN = 3.3V to 4.1V VOUT = 3.0 V ± 2% IOUT = 1 mA to 100 mA TAMAX = 55°C PMAX = (4.1V – (3.0V x 0.98)) x 100 mA PMAX = 116.0 milliwatts To determine the junction temperature of the device, the thermal resistance from junction-to-ambient must be known. The 3-pin SOT-23 thermal resistance from junc- tion-to-air (RθJA) is estimated to be approximately 359°C/W. The SOT-89 RθJA is estimated to be approxi- mately 110°C/W when mounted on 1 square inch of copper. The TO-92 RθJA is estimated to be 131.9°C/W. The RθJA will vary with physical layout, airflow and other application-specific conditions. The device junction temperature is determined by calculating the junction temperature rise above ambient, then adding the rise to the ambient temperature. EQUATION PD (Pass Device) = (VIN – VOUT) x IOUT PD (Bias) = VIN x IGND PTOTAL = PD (Pass Device) + PD (Bias) PD = (VINMAX – VOUTMIN) x IOUTMAX Junction Temperature TJ = PDMAX x RθJA + TA TJ = 116.0 milliwatts x 359°C/W + 55°C TJ = 96.6°C SOT-23 Example: SOT-89 Example: TJ = 116.0 milliwatts x 110°C/W + 55°C TJ = 67.8°C TO-92 Example: TJ = 116.0 milliwatts x 131.9°C/W + 55°C TJ = 70.3°C

© 2005 Microchip Technology Inc. DS21435F-page 11 TC55 6.0 PACKAGING INFORMATION 6.1 Package Marking Information Symbol Voltage Symbol Voltage A x.0 F x.5 B x.1 H x.6 C x.2 K x.7 D x.3 L x.8 E x.4 M x.9 3-Pin SOT-23A 3-Pin SOT-89 1 represents first voltage digit 2V, 3V, 4V, 5V, 6V Ex: 3.xV = 3 2 represents first decimal place voltage (x.0 - x.9) Ex: 3.4V = 3 E represents polarity 0 = Positive (fixed) 4 represents assembly lot number 3-Pin TO-92 = 55RP (fixed) 1 , 2 , 3 & 4 5 represents first voltage digit (2-6) 6 represents first voltage decimal (0-9) 7 represents extra feature code: fixed: 0 represents regulation accuracy 1 = ±1.0% (custom), 2 = ±2.0% (standard) 9 , 10, represents assembly lot number 11 & 12

© 2005 Microchip Technology Inc. 3-Lead Plastic Small Outline Transistor (CB) (SOT23) β Mold Draft Angle Bottom α Mold Draft Angle Top 0.51 0.44 0.37 .020 .017 .015 B Lead Width 0.18 0.14 0.09 .007 .006 .004 c Lead Thickness φ Foot Angle 0.55 0.45 0.35 .022 .018 .014 L Foot Length 3.04 2.92 2.80 .120 .115 .110 D Overall Length 1.40 1.30 1.20 .055 .051 .047 Molded Package Width 2.64 2.37 2.10 .104 .093 .083 E Overall Width 0.10 0.06 0.01 .004 .002 .000 Standoff 1.02 0.95 0.88 .040 .037 .035 Molded Package Thickness 1.12 1.01 0.89 .044 .040 .035 A Overall Height 1.92 .076 Outside lead pitch (basic) 0.96 .038 p Pitch n Number of Pins MAX NOM MIN MAX NOM MIN Dimension Limits MILLIMETERS INCHES* Units p D B n E L c β φ α A * Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: TO-236 Drawing No. C04-104 § Significant Characteristic

© 2005 Microchip Technology Inc. DS21435F-page 13 TC55 3-Lead Plastic Small Outline Transistor (MB) (SOT89) 0.56 0.44 .022 .017 B Lead 2 Width 0.44 0.35 .017 .014 c Lead Thickness 1.83 1.62 .072 .064 Tab Length 4.60 4.40 .181 .173 D Overall Length 2.29 2.13 .090 .084 Molded Package Width at Top 4.25 3.94 .167 .155 H Overall Width 1.60 1.40 .063 .055 A Overall Height

3.00 BSC

.118 BSC Outside lead pitch (basic)

1.50 BSC

.059 BSC p Pitch MAX MIN MAX MIN Dimension Limits MILLIMETERS* INCHES Units exceed .005" (0.127mm) per side. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not Notes: JEDEC Equivalent: TO-243 Drawing No. C04-29 *Controlling Parameter Foot Length L .035 .047 0.89 1.20 Leads 1 & 3 Width .014 .019 0.36 0.48 Molded Package Width at Base E .090 .102 2.29 2.60 H L B p E C A D

© 2005 Microchip Technology Inc. 3-Lead Plastic Transistor Outline (ZB) (TO-92) β Mold Draft Angle Bottom α 0.56 0.48 0.41 .022 .019 .016 B Lead Width 0.51 0.43 0.36 .020 .017 .014 c Lead Thickness 2.41 2.29 2.16 .095 .090 .085 R Molded Package Radius 4.95 4.64 4.32 .195 .183 .170 D Overall Length 4.95 4.71 4.45 .195 .186 .175 Overall Width 3.94 3.62 3.30 .155 .143 .130 A Bottom to Package Flat 1.27 .050 p Pitch n Number of Pins MAX NOM MIN MAX NOM MIN Dimension Limits MILLIMETERS INCHES* Units R n α p L B A c β D Tip to Seating Plane L .500 .555 .610 12.70 14.10 15.49 *Controlling Parameter Mold Draft Angle Top Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: TO-92 Drawing No. C04-101

© 2005 Microchip Technology Inc. DS21435F-page 15 TC55 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. Sales and Support Device: TC55: 1 µA Low Dropout Positive Voltage Regulator Output Voltage: = 1.2V "Standard" = 1.8V "Standard" = 2.5V "Standard" = 3.0V "Standard" = 3.3V "Standard" = 5.0V "Standard" Extra Feature Code: = Fixed Tolerance: = 1.0% (Custom) = 2.0% (Standard) Temperature: E = -40°C to +85°C Package Type: CB = 3-Pin SOT-23A (equivalent to EIAJ SC-59) MB = 3-Pin SOT-89 ZB = 3-Pin TO-92 Taping Direction: TR = Standard 713 = Standard PART NO. X XX Output Feature Code Device Examples: TC55RP1802ECB713: 1.8V LDO Positive Voltage Regulator, 2% Tolerance SOT23-A-3 package. TC55RP2502EMB713: 1.8V LDO Positive Voltage Regulator, 2% Tolerance. SOT89-3 package. TC55RP2502ECB713: 2.5V LDO Positive Voltage Regulator, 2% Tolerance. SOT23-A-3 package. TC55RP3002ECB713: 3.0V LDO Positive Voltage Regulator, 2% Tolerance. SOT23-A-3 package. TC55RP3002EMB713: 3.0V LDO Positive Voltage Regulator, 2% Tolerance. SOT89-3 package. TC55RP3302ECB713: 3.3V LDO Positive Voltage Regulator, 2% Tolerance. SOT23-A-3 package. TC55RP3302EMB713: 3.3V LDO Positive Voltage Regulator, 2% Tolerance. SOT89-3 package. TC55RP5002ECB713: 5.0V LDO Positive Voltage Regulator, 2% Tolerance. SOT23-A-3 package. TC55RP5002EMB713: 5.0V LDO Positive Voltage Regulator, 2% Tolerance. SOT89-3 package. Voltage X Tolerance X Temp. XX Package XX Taping Direction Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.

© 2005 Microchip Technology Inc. NOTES:

© 2005 Microchip Technology Inc. DS21435F-page 17 Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WAR- RANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB, PICMASTER, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Linear Active Thermistor, MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel, Total Endurance and WiperLock are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2005, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Note the following details of the code protection feature on Microchip devices: Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Microchip received ISO/TS-16949:2002 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona and Mountain View, California in October 2003. The Company’s quality system processes and procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.

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