TC4421M_13 MICROCHIP | Alldatasheet

Document overview

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Technical content

Features

  • High Peak Output Current: 9A
  • Wide Input Supply Voltage Operating Range: - 4.5V to 18V
  • High Continuous Output Current: 2A Max
  • Fast Rise and Fall Times: - 30 ns with 4,700 pF Load - 180 ns with 47,000 pF Load
  • Short Propagation Delays: 30 ns (typ)
  • Low Supply Current: - With Logic ‘1’ Input – 200 µA (typ) - With Logic ‘0’ Input – 55 µA (typ)
  • Low Output Impedance: 1.4  (typ)
  • Latch-Up Protected: Will Withstand 1.5A Output Reverse Current
  • Input: Will Withstand Negative Inputs Up To 5V
  • Pin-Compatible with the TC4420M/TC4429M 6A MOSFET Driver
  • Wide Operating Temperature Range: - -55°C to +125°C
  • See TC4421/TC4422 Data Sheet (DS21420) for additional temperature range and package offerings

Applications

  • Line Drivers for Extra Heavily-Loaded Lines
  • Pulse Generators
  • Driving the Largest MOSFETs and IGBTs
  • Local Power ON/OFF Switch
  • Motor and Solenoid Driver General Description The TC4421M/TC4422M are high-current buffer/ drivers capable of driving large MOSFETs and IGBTs. They are essentially immune to any form of upset, except direct overvoltage or over-dissipation. They cannot be latched, under any conditions, within their power and voltage ratings. These parts are not subject to damage or improper operation when up to 5V of ground bounce is present on their ground terminals. They can accept, without damage or logic upset, more than 1A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4 kV of electrostatic discharge. The TC4421M/TC4422M inputs may be driven directly from either TTL or CMOS (3V to 18V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms. Package Types 8-Pin CERDIP VDD OUTPUT GND VDD INPUT NC GND OUTPUT TC4421M TC4422M Note: Duplicate pins must both be connected for proper operation. TC4421M TC4422M VDD OUTPUT GND OUTPUT 9A High-Speed MOSFET Drivers

DS21934B-page 2  2005-2013 Microchip Technology Inc. Functional Block Diagram Effective Input Output Input GND VDD 300 mV 4.7V TC4421M C = 25 pF TC4422M Inverting Non-Inverting

 2005-2013 Microchip Technology Inc. DS21934B-page 3 TC4421M/TC4422M

1.0 ELECTRICAL

Absolute Maximum Ratings† † Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the spec ifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, TA = +25°C with 4.5V  VDD  18V. Parameters Sym Min Typ Max Units Conditions Input Logic ‘1’, High Input Voltage V IH 2.4 1.8 — V Logic ‘0’, Low Input Voltage V IL —1 . 3 0 . 8 V Input Current I IN -10 — +10 µA 0V VINVDD Output High Output Voltage V OH VDD – 0.025 — — V DC TEST Low Output Voltage V OL — — 0.025 V DC TEST Output Resistance, High R OH —1 . 4 —  IOUT = 10 mA, VDD = 18V Output Resistance, Low R OL —0 . 9 1 . 7  IOUT = 10 mA, VDD = 18V Peak Output Current I PK —9 . 0 — A V DD = 18V Latch-Up Protection Withstand Reverse Current Switching Time (Note 1) Rise Time t R —6 0 7 5 n s Figure 4-1, CL = 10,000 pF Fall Time t F —6 0 7 5 n s Figure 4-1, CL = 10,000 pF Delay Time t D1 —3 0 6 0 n s Figure 4-1 Delay Time t D2 —3 3 6 0 n s Figure 4-1 Power Supply Power Supply Current I S — 0.2 1.5 150 mA µA VIN = 3V VIN = 0V Operating Input Voltage V DD 4.5 — 18 V Note 1: Switching times ensured by design.

DS21934B-page 4  2005-2013 Microchip Technology Inc. DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V  VDD  18V. Parameters Sym Min Typ Max Units Conditions Input Logic ‘1’, High Input Voltage V IH 2.4 — — V Logic ‘0’, Low Input Voltage V IL —— 0 . 8 V Input Current I IN -10 — +10 µA 0V VINVDD Output High Output Voltage V OH VDD – 0.025 — — V DC TEST Low Output Voltage V OL — — 0.025 V DC TEST Output Resistance, High R OH —2 . 4 3 . 6  IOUT = 10 mA, VDD = 18V Output Resistance, Low R OL —1 . 8 2 . 7  IOUT = 10 mA, VDD = 18V Switching Time (Note 1) Rise Time t R — 60 120 ns Figure 4-1, CL = 10,000 pF Fall Time t F — 60 120 ns Figure 4-1, CL = 10,000 pF Delay Time t D1 —5 0 8 0 n s Figure 4-1 Delay Time t D2 —6 5 8 0 n s Figure 4-1 Power Supply Power Supply Current I S — 0.2 mA V IN = 3V VIN = 0V Operating Input Voltage V DD 4.5 — 18 V Note 1: Switching times ensured by design. Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V  VDD  18V. Parameters Sym Min Typ Max Units Conditions Temperature Ranges Specified Temperature Range (M) T A -55 — +125 °C Maximum Junction Temperature T J — — +150 °C Storage Temperature Range T A -65 — +150 °C Package Thermal Resistances Thermal Resistance, 8L-CERDIP JA —1 5 0— ° C / W

 2005-2013 Microchip Technology Inc. DS21934B-page 5 TC4421M/TC4422M

2.0 TYPICAL PERFORMANCE CURVES

Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  18V. FIGURE 2-1: Rise Time vs. Supply Voltage. FIGURE 2-2: Rise Time vs. Capacitive Load. FIGURE 2-3: Rise and Fall Times vs. Temperature. FIGURE 2-4: Fall Time vs. Supply Voltage. FIGURE 2-5: Fall Time vs. Capacitive Load. FIGURE 2-6: Propagation Delay vs. Supply Voltage. Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 220 200 180 160 140 120 100 468 1 0 1 2 14 16 18 1000 pF 4700 pF 10,000 pF 22,000 pF tRISE (nsec) VDD (V) tRISE (nsec) 15V 300 250 200 150 100 100 1000 10,000 100,000 10V CLOAD (pF) -40 0 40 80 120 TIME (nsec) TA (°C) CLOAD = 10,000 pF VDD = 15V tFALL tRISE 180 160 140 120 100 4 6 8 1 01 21 41 61 8 1000 pF 4700 pF 10,000 pF 22,000 pF tFALL (nsec) VDD (V) tFALL (nsec) 300 250 200 150 100 100 1000 10,000 10V 15V 100,000 CLOAD (pF) 81 01 2 1 41 61 84 TIME (nsec) VDD (V) CLOAD = 1000 pF tD1 tD2

DS21934B-page 6  2005-2013 Microchip Technology Inc. Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  18V. FIGURE 2-7: Supply Current vs. Capacitive Load (VDD = 18V). FIGURE 2-8: Supply Current vs. Capacitive Load (VDD = 12V). FIGURE 2-9: Supply Current vs. Capactive Load (VDD = 6V). FIGURE 2-10: Supply Current vs. Frequency (VDD = 18V). FIGURE 2-11: Supply Current vs. Frequency (VDD = 12V). FIGURE 2-12: Supply Current vs. Frequency (VDD = 6V). 220 100 200 180 160 140 120 100 100,00010,0001000

1.125 MHz

2 MHz

63.2 kHz ISUPPLY (mA) CLOAD (pF) VDD = 18V ISUPPLY (mA) 180 160 140 120 100 63.2 kHz 20 kHz 632 kHz 200 kHz 100 100,000 10,0001000 VDD = 12V CLOAD (pF) ISUPPLY (mA) 100 20 kHz 632 kHz 200 kHz 63.2 kHz 100 100,000 10,0001000 VDD = 6V CLOAD (pF) FREQUENCY (kHz) 180 100 120 140 160 0.1 μF 22,000 pF 470 pF 10,000 pF 4700 pF 10 100 1000 47,000 pF ISUPPLY (mA) VDD = 18V ISUPPLY (mA) FREQUENCY (kHz) 180 100 120 140 160 0.1 μF 470 pF 22,000 pF 4700 pF 10,000 pF 47,000 pF 10 100 1000 VDD = 12V ISUPPLY (mA) 47,000 pF 120 100 0.1 μF 4700 pF FREQUENCY (kHz) 100 1000 22,000 pF 470 pF 10,000 pF 10 100 1000 VDD = 6V

DS21934B-page 8  2005-2013 Microchip Technology Inc.

3.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE

3.1 Supply Input (V DD)

The VDD input is the bias supply for the MOSFET driver and is rated for 4.5V to 18V with respect to the ground pin. The VDD input should be bypassed to ground with a local ceramic capacitor. The value of the capacitor should be chosen based on the capacitive load that is being driven. A minimum value of 1.0 µF is suggested.

3.2 Control Input

The MOSFET driver input is a high-impedance, TTL/CMOS-compatible input. The input also has 300 mV of hysteresis between the high and low thresholds that prevents output glitching even when the rise and fall time of the input signal is very slow.

3.3 CMOS Push-Pull Output

The MOSFET driver output is a low-impedance, CMOS, push-pull style output capable of driving a capacitive load with 9.0A peak currents. The MOSFET driver output is capable of withstanding 1.5A peak reverse currents of either polarity.

3.4 Ground

The ground pins are the return path for the bias current and for the high peak currents that discharge the load capacitor. The ground pins should be tied into a ground plane or have very short traces to the bias supply source return. Pin No. 8-Pin CERDIP Symbol Description 1V DD Supply input, 4.5V to 18V

2 INPUT Control input, TTL/CMOS-compatible input

3 NC No connection

4 GND Ground

5 GND Ground

6 OUTPUT CMOS push-pull output

7 OUTPUT CMOS push-pull output

DD Supply input, 4.5V to 18V

 2005-2013 Microchip Technology Inc. DS21934B-page 9 TC4421M/TC4422M

4.0 APPLICATIONS INFORMATION

FIGURE 4-1: Switching Time Test Circuits. Inverting Driver Non-Inverting Driver Input tD1 tF tR tD2 Input: 100 kHz, square wave, tRISE = tFALL  10 nsec Output Input Output tD1 tF tR tD2 +5V 10% 90% 10% 90% 10% 90%+18V 90% 10% 10% 10% 90% +5V +18V 90% CL = 10,000 pF 0.1 µF 4.7 µF Input VDD = 18V Output 0.1 µF TC4421M TC4422M

DS21934B-page 10  2005-2013 Microchip Technology Inc.

5.0 PACKAGING INFORMATION

5.1 Package Marking Information

8-Lead CERDIP (300 mil) Example: XXXXXXXX XXXXXNNN YYWW TC4421 MJA^^256 0542 Legend: XX...X Customer-specific information Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) * This package is Pb-free. The Pb-free JEDEC designator ( ) can be found on the outer packaging for this package. Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information.

 2005-2013 Microchip Technology Inc. DS21934B-page 11 TC4421M/TC4422M 8-Lead Ceramic Dual In-line – 300 mil (CERDIP) 2.54.100pPitch 88nNumber of Pins MAXNOMMINMAXNOMMINDimension Limits MILLIMETERSINCHES*Units JEDEC Equivalent: MS-030 Drawing No. C04-010 *Controlling Parameter D n c eB E p L B A Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging

DS21934B-page 12  2005-2013 Microchip Technology Inc. NOTES:

 2005-2013 Microchip Technology Inc. DS21934B-page 13 TC4421M/TC4422M APPENDIX A: REVISION HISTORY Revision A (February 2005)

  • Original Release of this Document. Revision B (January 2013) Added a note to each package outline drawing.

DS21934B-page 14  2005-2013 Microchip Technology Inc. NOTES:

 2005-2013 Microchip Technology Inc. DS21934B-page 15 TC4421M/TC4422M PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office . Device and Temperature Range: TC4421M: 9A High-Speed MOSFET Driver, Inverting, -55°C to +125°C TC4422M: 9A High-Speed MOSFET Driver, Non-Inverting, -55°C to +125°C Package: JA = Ceramic Dual In-Line (300 mil Body), 8-lead PART NO. XX PackageDevice and Temperature Examples: a) TC4421MJA: 9A High-Speed MOSFET Driver, Inverting, 8LD CERDIP package. a) TC4422MJA: 9A High-Speed MOSFET Driver, Non-Inverting, 8LD CERDIP package. Range

DS21934B-page 16  2005-2013 Microchip Technology Inc. NOTES:

 2005-2013 Microchip Technology Inc. DS21934B-page 17 Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY , PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE . Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MTP, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. Analog-for-the-Digital Age, Application Maestro, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. & KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2005-2013, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 9781620769171 Note the following details of the code protection feature on Microchip devices:

  • Microchip products meet the specification cont ained in their particular Microchip Data Sheet.
  • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions.
  • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
  • Microchip is willing to work with the customer who is concerned about the integrity of their code.
  • Neither Microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are co mmitted to continuously improvin g the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. QUALITY MANAGEMENT S YSTEM CERTIFIED BY DNV == ISO/TS 16949 ==

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