TC4421CG

TC4421_04 MICROCHIP | Alldatasheet

Document overview

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Technical content

Features

• High Peak Output Current: 9A  Wide Input Supply Voltage Operating Range: - 4.5V to 18V  High Continuous Output Current: 2A Max  Fast Rise and Fall Times: - 30 ns with 4,700 pF Load - 180 ns with 47,000 pF Load  Short Propagation Delays: 30 ns (typ)  Low Supply Current: - With Logic ‘1’ Input – 200 µA (typ) - With Logic ‘0’ Input – 55 µA (typ)  Low Output Impedance: 1.4Ω (typ)  Latch-Up Protected: Will Withstand 1.5A Output Reverse Current  Input Will Withstand Negative Inputs Up To 5V  Pin-Compatible with the TC4420/TC4429 6A MOSFET Driver  Space-saving 8-Pin 6x5 DFN Package

Applications

 Line Drivers for Extra Heavily-Loaded Lines  Pulse Generators  Driving the Largest MOSFETs and IGBTs  Local Power ON/OFF Switch  Motor and Solenoid Driver General Description The TC4421/TC4422 are high-current buffer/drivers capable of driving large MOSFETs and IGBTs. These devices are essentially immune to any form of upset, except direct overvoltage or over-dissipation. They cannot be latched under any conditions within their power and voltage ratings. These parts are not subject to damage or improper operation when up to 5V of ground bounce is present on their ground termi- nals. They can accept, without damage or logic upset, more than 1A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4 kV of electrostatic discharge. The TC4421/TC4422 inputs may be driven directly from either TTL or CMOS (3V to 18V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms. With both surface-mount and pin-through-hole packages and four operating temperature range offer- ings, the TC4421/22 family of 9A MOSFET drivers fit into most any application where high gate/line capacitance drive is required. Package Types(1) 8-Pin PDIP/ VDD OUTPUT GND VDD INPUT NC GND OUTPUT TC4421 TC4422 5-Pin TO-220 VDD GND INPUT GND OUTPUT TC4421 TC4422 Tab is Common to VDD Note 1: Duplicate pins must both be connected for proper operation. 2: Exposed pad of the DFN package is electrically isolated. TC4421 TC4422 VDD OUTPUT GND OUTPUT SOIC 8-Pin DFN(2) VDD INPUT NC GND 4 5 TC4421 TC4422 VDD OUTPUT GND OUTPUT TC4421 TC4422 VDD OUTPUT GND OUTPUT 9A High-Speed MOSFET Drivers

DS21420D-page 2  2004 Microchip Technology Inc. Functional Block Diagram Effective Input Output Input GND VDD 300 mV 4.7V TC4421 C = 25 pF TC4422 Inverting Non-Inverting 200 µA

 2004 Microchip Technology Inc. DS21420D-page 3 TC4421/TC4422

1.0 ELECTRICAL

Absolute Maximum Ratings† Package Power Dissipation (TA ≤ 70°C) Package Power Dissipation (TA ≤ 25°C) Thermal Impedances (To Case) † Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, TA = +25°C with 4.5V ≤ VDD ≤ 18V. Parameters Sym Min Typ Max Units Conditions Input Logic ‘1’, High Input Voltage VIH 2.4 1.8 — V Logic ‘0’, Low Input Voltage VIL —1 . 3 0 . 8 V Input Current I IN –10 — +10 µA 0V ≤ VIN ≤ VDD Output High Output Voltage V OH VDD – 0.025 — — V DC TEST Low Output Voltage V OL — — 0.025 V DC TEST Output Resistance, High R OH —1 . 4 — Ω IOUT = 10 mA, VDD = 18V Output Resistance, Low R OL —0 . 9 1 . 7 Ω IOUT = 10 mA, VDD = 18V Peak Output Current I PK —9 . 0 — A V DD = 18V Continuous Output Current I DC 2— — A 1 0 V ≤ VDD ≤ 18V, TA = +25°C (TC4421/TC4422 CAT only) (Note 3) Latch-Up Protection Withstand Reverse Current IREV — >1.5 — A Duty cycle ≤ 2%, t ≤ 300 µsec Switching Time (Note 1) Rise Time t R —6 0 7 5 n s Figure 4-1, CL = 10,000 pF Fall Time t F —6 0 7 5 n s Figure 4-1, CL = 10,000 pF Delay Time t D1 —3 0 6 0 n s Figure 4-1 Delay Time t D2 —3 3 6 0 n s Figure 4-1 Power Supply Power Supply Current I S — 0.2 1.5 150 mA µA VIN = 3V VIN = 0V Operating Input Voltage V DD 4.5 — 18 V Note 1: Switching times ensured by design. 2: Package power dissipation is dependent on the copper pad area on the PCB. 3: Tested during characterization, not production tested.

DS21420D-page 4  2004 Microchip Technology Inc. DC CHARACTERISTICS (OVER OPE RATING TEMPERATURE RANGE) TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V ≤ VDD ≤ 18V. Parameters Sym Min Typ Max Units Conditions Input Logic ‘1’, High Input Voltage VIH 2.4 — — V Logic ‘0’, Low Input Voltage VIL —— 0 . 8 V Input Current I IN –10 — +10 µA 0V ≤ VIN ≤ VDD Output High Output Voltage V OH VDD – 0.025 — — V DC TEST Low Output Voltage V OL — — 0.025 V DC TEST Output Resistance, High R OH —2 . 4 3 . 6 Ω IOUT = 10 mA, VDD = 18V Output Resistance, Low R OL —1 . 8 2 . 7 Ω IOUT = 10 mA, VDD = 18V Switching Time (Note 1) Rise Time t R — 60 120 ns Figure 4-1, CL = 10,000 pF Fall Time t F — 60 120 ns Figure 4-1, CL = 10,000 pF Delay Time t D1 —5 0 8 0 n s Figure 4-1 Delay Time t D2 —6 5 8 0 n s Figure 4-1 Power Supply Power Supply Current I S — 0.2 mA V IN = 3V VIN = 0V Operating Input Voltage V DD 4.5 — 18 V Note 1: Switching times ensured by design. Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V. Parameters Sym Min Typ Max Units Conditions Temperature Ranges Specified Temperature Range (C) T A 0— + 7 0 ° C Specified Temperature Range (E) T A –40 — +85 °C Specified Temperature Range (V) T A –40 — +125 °C Maximum Junction Temperature T J — — +150 °C Storage Temperature Range T A –65 — +150 °C Package Thermal Resistances Thermal Resistance, 5L-TO-220 θJA —7 1— ° C / W Thermal Resistance, 8L-6x5 DFN θJA — 33.2 — °C/W Typical 4-layer board with vias to ground plane Thermal Resistance, 8L-PDIP θJA —1 2 5— ° C / W Thermal Resistance, 8L-SOIC θJA —1 2 0— ° C / W

 2004 Microchip Technology Inc. DS21420D-page 5 TC4421/TC4422

2.0 TYPICAL PERFORMANCE CURVES

Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V. FIGURE 2-1: Rise Time vs. Supply Voltage. FIGURE 2-2: Rise Time vs. Capacitive Load. FIGURE 2-3: Rise and Fall Times vs. Temperature. FIGURE 2-4: Fall Time vs. Supply Voltage. FIGURE 2-5: Fall Time vs. Capacitive Load. FIGURE 2-6: Propagation Delay vs. Supply Voltage. Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 220 200 180 160 140 120 100 468 1 0 1 2 14 16 18 1000 pF 4700 pF 10,000 pF 22,000 pF tRISE (nsec) VDD (V) tRISE (nsec) 15V 300 250 200 150 100 100 1000 10,000 100,000 10V CLOAD (pF) -40 0 40 80 120 Time (nsec) TA (°C) CLOAD = 10,000 pF VDD = 15V tFALL tRISE 180 160 140 120 100 4 6 8 1 01 21 41 61 8 1000 pF 4700 pF 10,000 pF 22,000 pF tFALL (nsec) VDD (V) tFALL (nsec) 300 250 200 150 100 100 1000 10,000 10V 15V 100,000 CLOAD (pF) 81 01 2 1 41 61 84 Time (nsec) VDD (V) CLOAD = 1000 pF tD1 tD2

DS21420D-page 6  2004 Microchip Technology Inc. Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V. FIGURE 2-7: Supply Current vs. Capacitive Load (VDD = 18V). FIGURE 2-8: Supply Current vs. Capacitive Load (VDD = 12V). FIGURE 2-9: Supply Current vs. Capactive Load (VDD = 6V). FIGURE 2-10: Supply Current vs. Frequency (VDD = 18V). FIGURE 2-11: Supply Current vs. Frequency (VDD = 12V). FIGURE 2-12: Supply Current vs. Frequency (VDD = 6V). 220 100 200 180 160 140 120 100 100,00010,0001000

1.125 MHz

2 MHz

63.2 kHz ISUPPLY (mA) CLOAD (pF) VDD = 18V ISUPPLY (mA) 180 160 140 120 100 63.2 kHz 20 kHz 632 kHz 200 kHz 100 100,000 10,0001000 VDD = 12V CLOAD (pF) ISUPPLY (mA) 100 20 kHz 632 kHz 200 kHz 63.2 kHz 100 100,000 10,0001000 VDD = 6V CLOAD (pF) Frequency (kHz) 180 100 120 140 160 22,000 pF 470 pF 10,000 pF 0.1 µF 4700 pF 10 100 1000 47,000 pF ISUPPLY (mA) VDD = 18V ISUPPLY (mA) Frequency (kHz) 180 100 120 140 160 470 pF 22,000 pF 4700 pF 10,000 pF 47,000 pF 10 100 1000 VDD = 12V 0.1 µF ISUPPLY (mA) 47,000 pF 120 100 4700 pF Frequency (kHz) 100 1000 22,000 pF 470 pF 10,000 pF 10 100 1000 VDD = 6V 0.1 µF

DS21420D-page 8  2004 Microchip Technology Inc.

3.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE

3.1 Supply Input (VDD )

The VDD input is the bias supply for the MOSFET driver and is rated for 4.5V to 18V with respect to the ground pin. The VDD input should be bypassed to ground with a local ceramic capacitor. The value of the capacitor should be chosen based on the capacitive load that is being driven. A minimum value of 1.0 µF is suggested.

3.2 Control Input

The MOSFET driver input is a high-impedance, TTL/CMOS compatible input. The input also has 300 mV of hysteresis between the high and low thresholds that prevents output glitching even when the rise and fall time of the input signal is very slow.

3.3 CMOS Push-Pull Output

The MOSFET driver output is a low-impedance, CMOS, push-pull style output capable of driving a capacitive load with 9.0A peak currents. The MOSFET driver output is capable of withstanding 1.5A peak reverse currents of either polarity.

3.4 Ground

The ground pins are the return path for the bias current and for the high peak currents that discharge the load capacitor. The ground pins should be tied into a ground plane or have very short traces to the bias supply source return.

3.5 Exposed Metal Pad

The exposed metal pad of the 6x5 DFN package is not internally connected to any potential. Therefore, this pad can be connected to a ground plane or other copper plane on a printed circuit board to aid in heat removal from the package. Pin No. 8-Pin PDIP, SOIC Pin No. 8-Pin DFN Pin No. 5-Pin TO-220 Symbol Description 11 — V DD Supply input, 4.5V to 18V 2 2 1 INPUT Control input, TTL/CMOS compatible input 3 3 — NC No connection 4 4 2 GND Ground 5 5 4 GND Ground 6 6 5 OUTPUT CMOS push-pull output 7 7 — OUTPUT CMOS push-pull output 88 3 V DD Supply input, 4.5V to 18V —P A D — N C E x p o s e d m e t a l p a d —— T A B V DD Metal tab is at the VDD potential

 2004 Microchip Technology Inc. DS21420D-page 9 TC4421/TC4422

4.0 APPLICATIONS INFORMATION

FIGURE 4-1: Switching Time Test Circuits. Inverting Driver Non-Inverting Driver Input tD1 tF tR tD2 Input: 100 kHz, square wave, tRISE = tFALL ≤ 10 nsec Output Input Output tD1 tF tR tD2 +5V 10% 90% 10% 90% 10% 90%+18V 90% 10% 10% 10% 90% +5V +18V 90% C L = 10,000 pF 0.1 µF 4.7 µF Input VDD = 18V Output 0.1 µF TC4421 TC4422Note: Pinout shown is for the DFN, PDIP and SOIC packages.

DS21420D-page 10  2004 Microchip Technology Inc.

5.0 PACKAGING INFORMATION

5.1 Package Marking Information

8-Lead PDIP (300 mil) Example: TC4421 CPA256 0420 Legend: XX...X Customer specific information* YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. * Standard OTP marking consists of Microchip part number, year code, week code, and traceability code. 5-Lead TO-220 XXXXXXXXX XXXXXXXXX YYWWNNN Example: TC4421CAT XXXXXXXXX 0420256 8-Lead DFN Example: XXXXXXX XXXXXXX XXYYWW NNN TC4421 EMF 0420 256 8-Lead SOIC (208 mil) Example: XXXXXXXX XXXXXXXX YYWWNNN GTC4421 ESM 0420256

 2004 Microchip Technology Inc. DS21420D-page 11 TC4421/TC4422 5-Lead Plastic Transistor Outline (AT) (TO-220) L H1 Q E b e F A D a (5X) ØPEJECTOR PIN Drawing No. C04-036 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. JEDEC equivalent: TO-220 *Controlling Parameter Mold Draft Angle Lead Width Lead Thickness a b .014 Dimension Limits Overall Height Lead Length Overall Width Lead Pitch A L E .540 MIN e Units .060 INCHES* .022 0.36 0.56 MILLIMETERS .190 .560 13.72 MINMAX 4.83 14.22 MAX .160 4.06 3° 7° 3° 7° Overall Length D 1.020.64.040.025 Overall Lead Centers e1 .263 .385 .560 .273 6.68 6.93 .072 1.52 1.83 .415 9.78 10.54 .590 14.22 14.99 Through Hole Diameter P .146 .156 3.71 3.96 J1Base to Bottom of Lead .090 2.29 .115 2.92 Through Hole Center Q .103 2.87 .113 2.62 Flag Thickness F .045 1.40 .055 1.14 Flag Length H1 .234 6.55 .258 5.94 Space Between Leads e3 .030 1.02 .040 0.76

DS21420D-page 12  2004 Microchip Technology Inc. 8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) – Saw Singulated

 2004 Microchip Technology Inc. DS21420D-page 13 TC4421/TC4422 8-Lead Plastic Dual In-line (P) – 300 mil (PDIP) B A L p α E eB β c n D Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins n 88 Pitch p .100 2.54 Base to Seating Plane A1 .015 0.38 Mold Draft Angle Top α 5 10 15 5 10 15 Mold Draft Angle Bottom β 5 10 15 5 10 15 * Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed JEDEC Equivalent: MS-001 Drawing No. C04-018 .010” (0.254mm) per side. § Significant Characteristic

DS21420D-page 14  2004 Microchip Technology Inc. 8-Lead Plastic Small Outline (SM) – Medium, 208 mil Body (SOIJ) (JEITA/EIAJ Standard, Formerly called SOIC) Foot Angle φ 048 0 48 1512015120βMold Draft Angle Bottom 1512015120αMold Draft Angle Top 1.98.078A2Molded Package Thickness 2.03.080AOverall Height 1.27.050pPitch 88nNumber of Pins MAXNOMMINMAXNOMMINDimension Limits MILLIMETERSINCHES*Units α A2A A1L c β φ D n p B E .070 .075 .069 .074 1.78 1.75 1.97 1.88 exceed .010" (0.254mm) per side. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not Notes: Drawing No. C04-056 *Controlling Parameter

 2004 Microchip Technology Inc. DS21420D-page 15 TC4421/TC4422 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. Sales and Support Device: TC4421: 9A High-Speed MOSFET Driver, Inverting TC4422: 9A High-Speed MOSFET Driver, Non-Inverting Temperature Range: C = 0°C to +70°C (PDIP and TO-220 Only) E = -40°C to +85°C V = -40°C to +125°C Package: AT = TO-220, 5-lead (C-Temp Only) MF = Dual, Flat, No-Lead (6x5 mm Body), 8-lead MF713 = Dual, Flat, No-Lead (6x5 mm Body), 8-lead (Tape and Reel) PA = Plastic DIP (300 mil Body), 8-lead SM = Plastic SOIC (208 mil Body), 8-lead SM713 = Plastic SOIC (208 mil Body), 8-lead (Tape and Reel) PB Free G = Lead-Free device = Blank * Available on selected packages. Contact your local sales representative for availability PART NO. X XX PackageTemperature Range Device Examples: a) TC4421CAT: 9A High-Speed Inverting MOSFET Driver, TO-220 package, 0°C to +70°C. b) TC4421ESMG: 9A High-Speed Inverting MOSFET Driver, PB Free SOIC package, -40°C to +85°C. c) TC4421VMF: 9A High-Speed Inverting MOSFET Driver, DFN package, -40°C to +125°C. a) TC4422VPA: 9A High-Speed Non-Inverting MOSFET Driver, PDIP package, -40°C to +125°C. b) TC4422EPA: 9A High-Speed Non-Inverting MOSFET Driver, PDIP package, -40°C to +85°C. c) TC4422EMF: 9A High-Speed Inverting MOSFET Driver, DFN package, -40°C to +85°C. XXX Tape & Reel X PB Free Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. Your local Microchip sales office 2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 3. The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.

DS21420D-page 16  2004 Microchip Technology Inc. NOTES:

 2004 Microchip Technology Inc. DS21420D-page 17 Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEE LOQ , microID, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, MXDEV, MXLAB, PICMASTER, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2004, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Note the following details of the code protection feature on Microchip devices:  Microchip products meet the specification contained in their particular Microchip Data Sheet.  Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions.  There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property.  Microchip is willing to work with the customer who is concerned about the integrity of their code.  Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Microchip received ISO/TS-16949:2002 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona and Mountain View, California in October 2003. The Company’s quality system processes and procedures are for its PICmicro® 8-bit MCUs, KEE LOQ ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.

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