TC4420EAT

TC4420_04 MICROCHIP | Alldatasheet

Document overview

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Technical content

Features

• Latch-Up Protected: Will Withstand >1.5A Reverse Output Current  Logic Input Will Withstand Negative Swing Up To  ESD Protected: 4 kV  Matched Rise and Fall Times: - 25 ns (2500 pF load)  High Peak Output Current: 6A  Wide Input Supply Voltage Operating Range: - 4.5V to 18V  High Capacitive Load Drive Capability: 10,000 pF  Short Delay Time: 55 ns (typ.)  CMOS/TTL Compatible Input  Low Supply Current With Logic ‘1’ Input: -4 5 0 µ A ( t y p . )  Low Output Impedance: 2.5Ω  Output Voltage Swing to Within 25 mV of Ground or V DD  Space-Saving 8-Pin SOIC and 8-Pin 6x5 DFN Packages

Applications

 Switch-Mode Power Supplies  Motor Controls  Pulse Transformer Driver  Class D Switching Amplifiers General Description The TC4420/TC4429 are 6A (peak), single-output MOSFET drivers. The TC4429 is an inverting driver (pin-compatible with the TC429), while the TC4420 is a non-inverting driver. These drivers are fabricated in CMOS for lower power and more efficient operation versus bipolar drivers. Both devices have TTL/CMOS compatible inputs that can be driven as high as V DD + 0.3V or as low as –5V without upset or damage to the device. This eliminates the need for external level-shifting circuitry and its associated cost and size. The output swing is rail-to-rail, ensuring better drive voltage margin, especially during power-up/power-down sequencing. Propagational delay time is only 55 ns (typ.) and the output rise and fall times are only 25 ns (typ.) into 2500 pF across the usable power supply range. Unlike other drivers, the TC4420/TC4429 are virtually latch-up proof. They replace three or more discrete components, saving PCB area, parts and improving overall system reliability. Package Types(1) 5-Pin TO-220 VDD GND INPUT GND OUTPUT TC4420 TC4429 Tab is Common to VDD 8-Pin CERDIP/ VDD OUTPUT GND VDD INPUT NC GND OUTPUT TC4420 TC4429 TC4420 TC4429 VDD OUTPUT GND OUTPUT PDIP/SOIC Note 1: Duplicate pins must both be connected for proper operation. 2: Exposed pad of the DFN package is electrically isolated. 8-Pin DFN(2) VDD INPUT NC GND 4 5 TC4420 TC4429 VDD OUTPUT GND OUTPUT TC4420 TC4429 VDD OUTPUT GND OUTPUT 6A High-Speed MOSFET Drivers

DS21419C-page 2  2004 Microchip Technology Inc. Functional Block Diagram Effective Input TC4420 Output Input GND VDD 300 mV 4.7V C = 38 pF TC4429 500 µA Non-Inverting Inverting

 2004 Microchip Technology Inc. DS21419C-page 3 TC4420/TC4429

1.0 ELECTRICAL

Absolute Maximum Ratings† Power Dissipation (TA ≤ 70°C) Package Power Dissipation (T A ≤ 25°C) Thermal Impedances (To Case) † Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, TA = +25°C with 4.5V ≤ VDD ≤ 18V. Parameters Sym Min Typ Max Units Conditions Input Logic ‘1’, High Input Voltage VIH 2.4 1.8 — V Logic ‘0’, Low Input Voltage VIL —1 . 3 0 . 8 V Input Voltage Range V IN –5 — V DD +0.3 V Input Current I IN –10 — +10 µA 0V ≤ VIN ≤ VDD Output High Output Voltage V OH VDD – 0.025 — — V DC TEST Low Output Voltage V OL — — 0.025 V DC TEST Output Resistance, High R OH —2 . 1 2 . 8 Ω IOUT = 10 mA, VDD = 18V Output Resistance, Low R OL —1 . 5 2 . 5 Ω IOUT = 10 mA, VDD = 18V Peak Output Current I PK —6 . 0 — A V DD = 18V Latch-Up Protection Withstand Reverse Current IREV — > 1.5 — A Duty cycle ≤ 2%, t ≤ 300 µsec Switching Time (Note 1) Rise Time t R —2 5 3 5 n s Figure 4-1, CL = 2,500 pF Fall Time t F —2 5 3 5 n s Figure 4-1, CL = 2,500 pF Delay Time t D1 —5 5 7 5 n s Figure 4-1 Delay Time t D2 —5 5 7 5 n s Figure 4-1 Power Supply Power Supply Current I S — 0.45 1.5 150 mA µA VIN = 3V VIN = 0V Operating Input Voltage V DD 4.5 — 18 V Note 1: Switching times ensured by design. 2: Package power dissipation is dependent on the copper pad area on the PCB.

DS21419C-page 4  2004 Microchip Technology Inc. DC CHARACTERISTICS (OVER OPE RATING TEMPERATURE RANGE) TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V ≤ VDD ≤ 18V. Parameters Sym Min Typ Max Units Conditions Input Logic ‘1’, High Input Voltage VIH 2.4 — — V Logic ‘0’, Low Input Voltage VIL —— 0 . 8 V Input Voltage Range V IN –5 — V DD + 0.3 V Input Current I IN –10 — +10 µA 0V ≤ VIN ≤ VDD Output High Output Voltage V OH VDD – 0.025 — — V DC TEST Low Output Voltage V OL — — 0.025 V DC TEST Output Resistance, High R OH —3 5 Ω IOUT = 10 mA, VDD = 18V Output Resistance, Low R OL —2 . 3 5 Ω IOUT = 10 mA, VDD = 18V Switching Time (Note 1) Rise Time t R —3 2 6 0 n s Figure 4-1, CL = 2,500 pF Fall Time t F —3 4 6 0 n s Figure 4-1, CL = 2,500 pF Delay Time t D1 —5 0 1 0 0 n s Figure 4-1 Delay Time t D2 —6 5 1 0 0 n s Figure 4-1 Power Supply Power Supply Current I S — 0.45 400 mA µA VIN = 3V VIN = 0V Operating Input Voltage V DD 4.5 — 18 V Note 1: Switching times ensured by design. Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V. Parameters Sym Min Typ Max Units Conditions Temperature Ranges Specified Temperature Range (C) T A 0— + 7 0 ° C Specified Temperature Range (I) T A –25 — +85 °C Specified Temperature Range (E) T A –40 — +85 °C Specified Temperature Range (V) T A –40 — +125 °C Maximum Junction Temperature T J — — +150 °C Storage Temperature Range T A –65 — +150 °C Package Thermal Resistances Thermal Resistance, 5L-TO-220 θJA —7 1— ° C / W Thermal Resistance, 8L-CERDIP θJA —1 5 0— ° C / W Thermal Resistance, 8L-6x5 DFN θJA — 33.2 — °C/W Typical four-layer board with vias to ground plane. Thermal Resistance, 8L-PDIP θJA —1 2 5— ° C / W Thermal Resistance, 8L-SOIC θJA —1 5 5— ° C / W

 2004 Microchip Technology Inc. DS21419C-page 5 TC4420/TC4429

2.0 TYPICAL PERFORMANCE CURVES

Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V. FIGURE 2-1: Rise Time vs. Supply Voltage. FIGURE 2-2: Rise Time vs. Capacitive Load. FIGURE 2-3: Propagation Delay Time vs. Temperature. FIGURE 2-4: Fall Time vs. Supply Voltage. FIGURE 2-5: Fall Time vs. Capacitive Load. FIGURE 2-6: Supply Current vs. Capacitive Load. Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 57 9 1 1 1 3 1 5 Supply Voltage (V) C = 2200 pFL 120 100 Time (nsec) C = 4700 pFL C = 10,000 pFL V = 12VDD V = 5VDD 1000 10,000 Capcitive Load (pF) V = 18VDD 100Time (nsec) –60 –20 20 60 100 140 TA (°C) Delay Time (nsec) D1t D2t C = 2200 pFL V = 18VDD 57 9 1 1 1 3 1 5 Supply Voltage (V) C = 2200 pFL Time (nsec) C = 4700 pFL C = 10,000 pFL 100 1000 10,000 Capacitive Load (pF) Time (nsec) V = 18VDD 100 V = 12VDD V = 5VDD 0 100 1000 10,000 Capacitive Load (pF) Supply Current (mA) 500 kHz 200 kHz 20 kHz V = 15VDD

DS21419C-page 6  2004 Microchip Technology Inc. Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V. FIGURE 2-7: Rise and Fall Times vs. Temperature. FIGURE 2-8: Propagation Delay Time vs. Supply Voltage. FIGURE 2-9: Supply Current vs. Frequency. FIGURE 2-10: High-State Output Resistance vs Supply Voltage. FIGURE 2-11: Effect of Input Amplitude on Propagation Delay. FIGURE 2-12: Low-State Output Resistance vs. Supply Voltage. –60 –20 20 60 100 140 TA (°C) t RISEt Time (nsec) C = 2200 pF V = 18VDD FALL L

35 Delay Time (nsec)

Supply Voltage (V) tD2 tD1 100 0 100 1000 10,000 Frequency (kHz) Supply Current (mA) 1000 18V 10V C = 2200 pFL 59 1 3 Supply Voltage (V) R ( )ΩOUT 100 mA 50 mA10 mA 71 1 1 5 200 160 120 Delay Time (nsec) 567 1 1 1 3 15 Load = 2200 pF Input 2.4V Input 3V Input 5V Input 8V and 10V 8 9 10 12 14 V (V)DD 2.5 1.5 59 1 3 Supply Voltage (V) R ( )ΩOUT 100 mA 50 mA 10 mA 71 1 1 5

 2004 Microchip Technology Inc. DS21419C-page 7 TC4420/TC4429 Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V. FIGURE 2-13: Crossover Energy. Crossover Area (AS) x 10-8 567 1 1 1 3 158 9 10 12 14 Supply Voltage (V) The values on this graph represent the loss seen by the driver during one complete cycle. For a single transition, divide the value by 2.

DS21419C-page 8  2004 Microchip Technology Inc.

3.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE

3.1 Supply Input (VDD )

The VDD input is the bias supply for the MOSFET driver and is rated for 4.5V to 18V with respect to the ground pins. The VDD input should be bypassed to ground with a local ceramic capacitor. The value of the capacitor should be chosen based on the capacitive load that is being driven. A minimum value of 1.0 µF is suggested.

3.2 Control Input

The MOSFET driver input is a high-impedance, TTL/CMOS compatible input. The input circuitry of the TC4420/TC4429 MOSFET driver also has a “speed- up” capacitor. This helps to decrease the propagation delay times of the driver. Because of this, input signals with slow rising or falling edges should not be used, as this can result in double-pulsing of the MOSFET driver output.

3.3 CMOS Push-Pull Output

The MOSFET driver output is a low-impedance, CMOS, push-pull style output capable of driving a capacitive load with 6.0A peak currents. The MOSFET driver output is capable of withstanding 1.5A peak reverse currents of either polarity.

3.4 Ground

The ground pins are the return path for the bias current and the high peak currents that discharge the load capacitor. The ground pins should be tied into a ground plane or have very short traces to the bias supply source return.

3.5 Exposed Metal Pad

The exposed metal pad of the 6x5 DFN package is not internally connected to any potential. Therefore, this pad can be connected to a ground plane or other copper plane on a printed circuit board (PCB) to aid in heat removal from the package. Pin No. 8-Pin CERDIP/ PDIP/SOIC Pin No. 8-Pin DFN Pin No. 5-Pin TO-220 Symbol Description 11 —V DD Supply input, 4.5V to 18V 2 2 1 INPUT Control input, TTL/CMOS compatible input 3 3 — NC No Connection 4 4 2 GND Ground 5 5 4 GND Ground 6 6 5 OUTPUT CMOS push-pull output 7 7 — OUTPUT CMOS push-pull output 88 3V DD Supply input, 4.5V to 18V —P A D — N C E x p o s e d M e t a l P a d —— T A BV DD Metal Tab is at the VDD Potential

 2004 Microchip Technology Inc. DS21419C-page 9 TC4420/TC4429

4.0 APPLICATIONS INFORMATION

FIGURE 4-1: Switching Time Test Circuits. Inverting Driver Non-Inverting Driver Input tD1 tF tR tD2 Input: 100 kHz, square wave, tRISE = tFALL ≤ 10 ns Output Input Output tD1 tF tR tD2 +5V 10% 90% 10% 90% 10% 90%+18V 90% 10% 10% 10% 90% +5V +18V 90% C L = 2,500 pF 0.1 µF 4.7 µF Input VDD = 18V Output 0.1 µF Note: Pinout shown is for the PDIP , SOIC, DFN and CERDIP packages. TC4429 TC4420

DS21419C-page 10  2004 Microchip Technology Inc.

5.0 PACKAGING INFORMATION

5.1 Package Marking Information

Legend: XX...X Customer specific information* YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. * Standard OTP marking consists of Microchip part number, year code, week code, and traceability code. 5-Lead TO-220 XXXXXXXXX XXXXXXXXX YYWWNNN Example: TC4420CAT 0419256 8-Lead CERDIP (300 mil) Example: XXXXXXXX XXXXXNNN YYWW TC4420 MJA256 0419 8-Lead DFN Example: XXXXXXX XXXXXXX XXYYWW NNN TC4420 EMF 0419 256

 2004 Microchip Technology Inc. DS21419C-page 11 TC4420/TC4429 Package Marking Information (Continued) XXXXXXXX XXXXXNNN YYWW 8-Lead PDIP (300 mil) Example: TC4420 CPA256 0419 8-Lead SOIC (150 mil) Example: XXXXXXXX XXXXYYWW NNN TC4420 EOA0419 256

DS21419C-page 12  2004 Microchip Technology Inc. 5-Lead Plastic Transistor Outline (AT) (TO-220) L H1 Q E b e F A D a (5X) ØPEJECTOR PIN Drawing No. C04-036 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. JEDEC equivalent: TO-220 *Controlling Parameter Mold Draft Angle Lead Width Lead Thickness a b .014 Dimension Limits Overall Height Lead Length Overall Width Lead Pitch A L E .540 MIN e Units .060 INCHES* .022 0.36 0.56 MILLIMETERS .190 .560 13.72 MINMAX 4.83 14.22 MAX .160 4.06 3° 7° 3° 7° Overall Length D 1.020.64.040.025 Overall Lead Centers e1 .263 .385 .560 .273 6.68 6.93 .072 1.52 1.83 .415 9.78 10.54 .590 14.22 14.99 Through Hole Diameter P .146 .156 3.71 3.96 J1Base to Bottom of Lead .090 2.29 .115 2.92 Through Hole Center Q .103 2.87 .113 2.62 Flag Thickness F .045 1.40 .055 1.14 Flag Length H1 .234 6.55 .258 5.94 Space Between Leads e3 .030 1.02 .040 0.76

 2004 Microchip Technology Inc. DS21419C-page 13 TC4420/TC4429 8-Lead Ceramic Dual In-line – 300 mil (JA) (CERDIP) 2.54.100pPitch 88nNumber of Pins MAXNOMMINMAXNOMMINDimension Limits MILLIMETERSINCHES*Units JEDEC Equivalent: MS-030 Drawing No. C04-010 *Controlling Parameter D n c eB E p L B A

DS21419C-page 14  2004 Microchip Technology Inc. 8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) – Saw Singulated

 2004 Microchip Technology Inc. DS21419C-page 15 TC4420/TC4429 8-Lead Plastic Dual In-line (PA) – 300 mil (PDIP) B A L p α E eB β c n D Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins n 88 Pitch p .100 2.54 Base to Seating Plane A1 .015 0.38 Mold Draft Angle Top α 5 10 15 5 10 15 Mold Draft Angle Bottom β 5 10 15 5 10 15 * Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed JEDEC Equivalent: MS-001 Drawing No. C04-018 .010” (0.254mm) per side. § Significant Characteristic

DS21419C-page 16  2004 Microchip Technology Inc. 8-Lead Plastic Small Outline (OA) – Narrow, 150 mil (SOIC) Foot Angle φ 048048 1512015120βMold Draft Angle Bottom 1512015120αMold Draft Angle Top 1.27.050pPitch 88nNumber of Pins MAXNOMMINMAXNOMMINDimension Limits MILLIMETERSINCHES*Units D n p B E h Lβ c 45° φ α A * Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-012 Drawing No. C04-057 § Significant Characteristic

 2004 Microchip Technology Inc. DS21419C-page 17 TC4420/TC4429 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. Sales and Support Device: TC4420: 6A High-Speed MOSFET Driver, Non-Inverting TC4429: 6A High-Speed MOSFET Driver, Inverting Temperature Range: C = 0°C to +70°C (PDIP, SOIC, and TO-220 Only) I = -25°C to +85°C (CERDIP Only) E = -40°C to +85°C V = -40°C to +125°C Package: AT = TO-220, 5-lead (C-Temp Only) JA = Ceramic Dual In-line (300 mil Body), 8-lead (I-Temp Only) MF = Dual, Flat, No-Lead (6X5 mm Body), 8-lead MF713 = Dual, Flat, No-Lead (6X5 mm Body), 8-lead (Tape and Reel) PA = Plastic DIP (300 mil Body), 8-lead OA = Plastic SOIC, (150 mil Body), 8-lead OA713 = Plastic SOIC, (150 mil Body), 8-lead (Tape and Reel) PB Free G = Lead-Free device * = Blank * Available on selected packages. Contact your local sales representative for availability PART NO. X XX PackageTemperature Range Device Examples: a) TC4420CAT: 6A High-Speed MOSFET Driver, Non-inverting, TO-220 package, 0°C to +70°C. b) TC4420EOA: 6A High-Speed MOSFET Driver, Non-inverting, SOIC package, -40°C to +85°C. c) TC4420VMF: 6A High-Speed MOSFET Driver, Non-inverting, DFN package, -40°C to +125°C. a) TC4429CAT: 6A High-Speed MOSFET Driver, Inverting, TO-220 package, 0°C to +70°C b) TC4429EPA: 6A High-Speed MOSFET Driver, Inverting, PDIP package, -40°C to +85°C c) TC4429VMF: 6A High-Speed MOSFET Driver, Inverting, DFN package, -40°C to +125°C XXX Tape and Reel X PB Free Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. Your local Microchip sales office 2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 3. The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.

DS21419C-page 18  2004 Microchip Technology Inc. NOTES:

 2004 Microchip Technology Inc. DS21419C-page 19 Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEE LOQ , microID, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, MXDEV, MXLAB, PICMASTER, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2004, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Note the following details of the code protection feature on Microchip devices:  Microchip products meet the specification contained in their particular Microchip Data Sheet.  Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions.  There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property.  Microchip is willing to work with the customer who is concerned about the integrity of their code.  Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Microchip received ISO/TS-16949:2002 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona and Mountain View, California in October 2003. The Company’s quality system processes and procedures are for its PICmicro® 8-bit MCUs, KEE LOQ ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.

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