TC429 MICROCHIP | Alldatasheet
Document overview
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Technical content
Features
- High Peak Output Current: 6A Wide Operating Range: 7V to 18V High Impedance CMOS Logic Input Logic Input Threshold Independent of Supply Voltage Low Supply Current - With Logic 1 Input – 5mA Max - With Logic 0 Input – 0.5mA Max Output Voltage Swing Within 25mV of Ground or VDD Short Delay Time: 75nsec Max High Capacitive Load Drive Capability -t RISE, tFALL = 35nsec Max With CLOAD = 2500pF
Applications
Switch-Mode Power Supplies CCD Drivers Pulse Transformer Drive Class D Switching Amplifiers Device Selection Table Package Type General Description The TC429 is a high-speed, single CMOS-level translator and driver. Designed specifically to drive highly capacitive power MOSFET gates, the TC429 features 2.5Ω output impedance and 6A peak output current drive. A 2500pF capacitive load will be driven 18V in 25nsec. The rapid switching times with large capacitive loads minimize MOSFET transition power loss. A TTL/CMOS input logic level is translated into an output voltage swing that equals the supply and will swing to within 25mV of ground or V DD. Input voltage swing may equal the supply. Logic input current is under 10µA, making direct interface to CMOS/bipolar switch-mode power supply controllers easy. Input “speed-up” capacitors are not required. The CMOS design minimizes quiescent power supply current. With a logic 1 input, power supply current is 5mA maximum and decreases to 0.5mA for logic 0 inputs. For dual devices, see the TC426/TC427/TC428, TC4426/TC4427/TC4428 and TC4426A/TC4427A/ TC4428A data sheets. For noninverting applications, or applications requiring latch-up protection, see the TC4420/TC4429 data sheet. Typical Application Part Number Package Temp. Range TC429CPA 8-Pin PDIP 0°C to +70°C TC429EPA 8-Pin PDIP -40°C to +85°C TC429MJA 8-Pin CERDIP -55°C to +125°C NC = No internal connection NOTE: Duplicate pins must both be connected for proper operation.
45 TC429 GNDGND
C = 38pF VDD 300mV 4,5 1,8 6,7 TC429 6A Single High-Speed, CMOS Power MOSFET Driver
DS21416B-page 2 2002 Microchip Technology Inc.
1.0 ELECTRICAL
Absolute Maximum Ratings* Input Voltage, Any Terminal Power Dissipation (TA ≤ 70°C) Derating Factor Operating Temperature Range *Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. TC429 ELECTRICAL SPECIFICATIONS Electrical Characteristics: TA = +25°C with 7V ≤ VDD ≤ 18V, unless otherwise noted. Symbol Parameter Min Typ Max Units Test Conditions Input VIH Logic 1, High Input Voltage 2.4 1.8 — V VIL Logic 0, Low Input Voltage — 1.3 0.8 V IIN Input Current -10 — 10 µA0 V ≤ VIN ≤ VDD Output VOH High Output Voltage V DD – 0.025 —— V VOL Low Output Voltage —— 0.025 V RO Output Resistance — 1.8 2.5 Ω VIN = 0.8V, IOUT = 10mA, VDD = 18V IOUT = 10mA, VDD = 18V IPK Peak Output Current — 6 — AV DD = 18V (Figure 3-4) Switching Time (Note 1) tR Rise Time — 23 35 nsec Figure 3-1, C L = 2500pF tF Fall Time — 25 35 nsec Figure 3-1, C L = 2500pF tD1 Delay Time — 53 75 nsec Figure 3-1 tD2 Delay Time — 60 75 nsec Figure 3-1 Power Supply I S Power Supply Current — 3.5 0.3 0.5 mA V IN = 3V VIN = 0V Note 1: Switching times ensured by design.
2002 Microchip Technology Inc. DS21416B-page 3 TC429 TC429 ELECTRICAL SPECIFICATIONS (CONTINUED) Electrical Characteristics: Over operating temperature range with 7V ≤ VDD ≤ 18V, unless otherwise noted. Symbol Parameter Min Typ Max Units Test Conditions Input VIH Logic 1, High Input Voltage 2.4 —— V VIL Logic 0, Low Input Voltage —— 0.8 V IIN Input Current -10 — 10 µA0 V ≤ VIN ≤ VDD Output VOH High Output Voltage V DD – 0.025 —— V VOL Low Output Voltage —— 0.025 V RO Output Resistance —— 5 Ω VIN = 0.8V, IOUT = 10mA, VDD = 18V —— 5 Ω VIN = 2.4V, IOUT = 10mA, VDD = 18V Switching Time (Note 1) tR Rise Time —— 70 nsec Figure 3-1, C L = 2500pF tF Fall Time —— 70 nsec Figure 3-1, C L = 2500pF tD1 Delay Time —— 100 nsec Figure 3-1 tD2 Delay Time —— 120 nsec Figure 3-1 Power Supply I S Power Supply Current — mA V IN = 3V VIN = 0V Note 1: Switching times ensured by design.
DS21416B-page 4 2002 Microchip Technology Inc.
2.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1. TABLE 2-1: PIN FUNCTION TABLE Pin No. (8-Pin PDIP, CERDIP) Symbol Description 1V DD Supply input, 7V to 18V. 2 INPUT Control input, TTL/CMOS compatible logic input. 3 NC No connection. 4 GND Ground. 5 GND Ground. 6 OUTPUT CMOS totem-pole output, common to Pin 7. 7 OUTPUT CMOS totem-pole output, common to Pin 6. DD Supply input, 7V to 18V.
2002 Microchip Technology Inc. DS21416B-page 5 TC429
3.0 APPLICATIONS INFORMATION
3.1 Supply Bypassing
Charging and discharging large capacitive loads quickly requires large currents. For example, charging a 2500pF load to 18V in 25nsec requires a 1.8A current from the device’s power supply. To ensure low supply impedance over a wide frequency range, a parallel capacitor combination is recom- mended for supply bypassing. Low-inductance ceramic disk capacitors with short lead lengths (< 0.5 in.) should be used. A 1µF film capacitor in parallel with one or two 0.1µF ceramic disk capacitors normally provides adequate bypassing.
3.2 Grounding
The high-current capability of the TC429 demands careful PC board layout for best performance. Since the TC429 is an inverting driver, any ground lead impedance will appear as negative feedback which can degrade switching speed. The feedback is especially noticeable with slow rise-time inputs, such as those produced by an open-collector output with resistor pull- up. The TC429 input structure includes about 300mV of hysteresis to ensure clean transitions and freedom from oscillation, but attention to layout is still recommended. Figure 3-3 shows the feedback effect in detail. As the TC429 input begins to go positive, the output goes negative and several amperes of current flow in the ground lead. As little as 0.05 Ω of PC trace resistance can produce hundreds of millivolts at the TC429 ground pins. If the driving logic is referenced to power ground, the effective logic input level is reduced and oscillations may result. To ensure optimum device performance, separate ground traces should be provided for the logic and power connections. Connecting logic ground directly to the TC429 GND pins ensures full logic drive to the input and fast output switching. Both GND pins should be connected to power ground. FIGURE 3-1: INVERTING DRIVER SWITCHING TIME TEST CIRCUIT FIGURE 3-2: SWITCHING SPEED 0.1µF +5V 18V 90% 10%10% 10% 90% 90% Input VDD = 18V Input Output tD1 tF tR tD2 CL = 2500pF 1µF Input: 100kHz, square wave, tRISE = tFALL ≤ 10nsec Output TC429 TIME (100ns/DIV) VOLTAGE (5V/DIV) CL = 2500pF VS = 18V INPUT OUTPUT 100ns TIME (100ns/DIV) VOLTAGE (5V/DIV) CL = 2500pF VS = 7V INPUT OUTPUT 100ns
DS21416B-page 6 2002 Microchip Technology Inc. FIGURE 3-3: SWITCHING TIME DEGRADATION DUE TO NEGATIVE FEEDBACK
3.3 Input Stage
The input voltage level changes the no-load or quiescent supply current. The N-channel MOSFET input stage transistor drives a 3mA current source load. With a logic “1” input, the maximum quiescent supply current is 5mA. Logic “0” input level signals reduce quiescent current to 500µA maximum. The TC429 input is designed to provide 300mV of hysteresis, providing clean transitions and minimizing output stage current spiking when changing states. Input voltage levels are approximately 1.5V, making the device TTL compatible over the 7V to 18V operating supply range. Input current is less than 10µA over this range. The TC429 can be directly driven by TL494, SG1526/ 1527, SG1524, SE5560 or similar switch-mode power supply integrated circuits. By off-loading the power-driving duties to the TC429, the power supply controller can operate at lower dissipation, improving performance and reliability. FIGURE 3-4: PEAK OUTPUT CURRENT TEST CIRCUIT
3.4 Power Dissipation
CMOS circuits usually permit the user to ignore power dissipation. Logic families such as the 4000 and 74C have outputs that can only supply a few milliamperes of current, and even shorting outputs to ground will not force enough current to destroy the device. The TC429, however, can source or sink several amperes and drive large capacitive loads at high frequency. The package power dissipation limit can easily be exceeded. Therefore, some attention should be given to power dissipation when driving low impedance loads and/or operating at high frequency. The supply current versus frequency and supply current versus capacitive load characteristic curves will aid in determining power dissipation calculations. Table 3-1 lists the maximum operating frequency for several power supply voltages when driving a 2500pF load. More accurate power dissipation figures can be obtained by summing the three power sources. Input signal duty cycle, power supply voltage and capacitive load influence package power dissipation. Given power dissipation and package thermal resis- tance, the maximum ambient operation temperature is easily calculated. The 8-pin CERDIP junction-to- ambient thermal resistance is 150°C/W. At +25°C, the package is rated at 800mW maximum dissipation. Maximum allowable chip temperature is +150°C. TC429 1µF 0.1µF0.1µF 18V 2.4V Logic Ground Power Ground 300 mV 6A PC Trace Resistance = 0.05W 2500pF 8 6,7 +18V TEK Current Probe 6302 TC429 1µF 0.1µF0.1µF 18V 2.4V 2500pF 8 6,7 TEK Current Probe 6302 +18V
2002 Microchip Technology Inc. DS21416B-page 7 TC429 Three components make up total package power dissipation: Capacitive load dissipation (PC) Quiescent power (PQ) Transition power (PT) The capacitive load-caused dissipation is a direct func- tion of frequency, capacitive load and supply voltage. The package power dissipation is: PC = f C VS Where: f = Switching frequency C = Capacitive load V S = Supply voltage Quiescent power dissipation depends on input signal duty cycle. A logic low input results in a low-power dissipation mode with only 0.5mA total current drain. Logic high signals raise the current to 5mA maximum. The quiescent power dissipation is: PQ = VS (D (IH) + (1 – D) IL) Where: IH = Quiescent current with input high (5mA max) IL = Quiescent current with input low (0.5mA max) D = Duty cycle Transition power dissipation arises because the output stage N- and P-channel MOS transistors are ON simultaneously for a very short period when the output changes. The transition package power dissipation is approximately: P T = f VS (3.3 x 10–9 A Sec) An example shows the relative magnitude for each item. C = 2500pF VS = 15V D = 50% f = 200kHz P D = Package power dissipation = PC + PT + PQ = 113mW + 10mW + 41mW = 164mW Maximum operating temperature = TJ – θJA (PD) = 125°C Where: TJ = Maximum allowable junction temperature (+150°C) θJA = Junction-to-ambient thermal resistance (150°C/W, CERDIP) Note: Ambient operating temperature should not exceed +85°C for IJA devices or +125°C for MJA devices. TABLE 3-1: MAXIMUM OPERATING FREQUENCIES CONDITIONS: 1. CERDIP Package (θJA =150°C/W) 2. TA = +25°C 3. CL = 2500pF FIGURE 3-5: PEAK OUTPUT CURRENT CAPABILITY
3.5 POWER-ON OSCILLATION
Note: It is extremely important that all MOSFET Driver applications be evaluated for the possibility of having High-Power Oscillations occurring during the power-on cycle. Power-on oscillations are due to trace size and layout as well as component placement. A ‘quick fix’ for most applications which exhibit power-on oscillation problems is to place approximately 10kΩ in series with the input of the MOSFET driver. V S fMAX 18V 500kHz 15V 700kHz 10V 1.3MHz 5V >2MHz TIME (5µs/DIV) VS = 18V RL = 0.1Ω INPUT OUTPUT 5µs500mV 5V/DIV 500mV/DIV (5 AMP/DIV)
DS21416B-page 8 2002 Microchip Technology Inc.
4.0 TYPICAL CHARACTERISTICS
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 105 10 15 20 SUPPLY VOLTAGE (V) TIME (nsec) Rise/Fall Times vs. Supply Voltage T °C L 10 0 75 °C) Rise/Fall Times vs. Temperature -50 -25 25 50 100 125 150 tR tRtF tF 100 100 1K 10K CAPACITIVE LOAD (pF) TIME (nsec) Rise/Fall Times vs. Capacitive Load tR tF T V 40 0 75 °C) DELAY TIME (nsec) Delay Times vs. Temperature -50 -25 25 50 100 125 tD2 tD1 SUPPLY CURRENT (mA) 10 100 1K 10K CAPACITIVE LOAD (pF) 200kHz 20kHz Supply Current vs. Capacitive Load TA °C V 400kHz 140 120 100 405 DELAY TIME (nsec) Delay Times vs. Supply Voltage 10 15 20 SUPPLY VOLTAGE (V) tD1 tD2 T °C C p = 2500pF L VDD = +15V 150 1 10 100 1K 115V 10V VDD = 18V T °C CL SUPPLY CURRENT (mA) FREQUENCY (kHz) Supply Current vs. Frequency 0 4 8 12 16 20 Supply Current vs. Supply Voltage SUPPLY CURRENT (mA) SUPPLY VOLTAGE (V) -75 -25 50 100 150 Supply Current vs. Temperature SUPPLY CURRENT (mA) °C) -50 0 25 75 125 T = +25°CCC RL = ∞ V = +18°CC RL = ∞
2002 Microchip Technology Inc. DS21416B-page 9 TC429 TYPICAL CHARACTERISTICS (CONTINUED) HYSTERESIS ≈310mV 200mV 3300mV TA = +25°C OUTPUT VOLTAGE (V) INPUT VOLTAGE (V) Voltage Transfer Characteristics OUTPUT VOLTAGE (mV) 400 300 200 100 CURRENT SOURCED (mA) 02 0 40 60 80 100 VDD = 5V 10V 15V15V 18V18V TTA = +25°C High Output Voltage vs. Current OUTPUT VOLTAGE (mV) 400 300 200 100 CURRENT SUNK (mA) 0 20 40 60 80 100 VDD = 5V 10V 15V15V 18V18V TA = +25°C Low Output Voltage vs. Current 200 400 600 800 1000 1200 1400 1600 0 10 20 30 40 50 60 70 80 90 100 110 120 AMBIENT TEMPERATURE (°C) MAX. POWER (mW) 8-Pin DIP Thermal Derating Curves 8-8-Pin CERDIP
DS21416B-page 10 2002 Microchip Technology Inc.
5.0 PACKAGING INFORMATION
5.1 Package Marking Information
Package marking data not available at this time.
5.2 Package Dimensions
3° MIN. PIN 1 .260 (6.60) .240 (6.10) .045 (1.14) .030 (0.76) .070 (1.78) .040 (1.02) .400 (10.16) .348 (8.84) .200 (5.08) .140 (3.56) .150 (3.81) .115 (2.92) .110 (2.79) .090 (2.29) .022 (0.56) .015 (0.38) .040 (1.02) .008 (0.20) .310 (7.87) .290 (7.37) .400 (10.16) .310 (7.87) 8-Pin Plastic DIP Dimensions: inches (mm) .400 (10.16) .370 (9.40) .300 (7.62) .230 (5.84) .065 (1.65) .045 (1.14) PIN 1 .200 (5.08) .160 (4.06) .200 (5.08) .125 (3.18) .110 (2.79) .090 (2.29) .020 (0.51) .016 (0.41) .040 (1.02) .020 (0.51) .320 (8.13) .290 (7.37) .150 (3.81) MIN. 3° MIN. 8-Pin CERDIP (Narrow) .015 (0.38) .008 (0.20) .400 (10.16) .320 (8.13) Dimensions: inches (mm)
2002 Microchip Technology Inc. DS21416B-page11 TC429 Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom- mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. Your local Microchip sales office 2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 3. The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
DS21416B-page12 2002 Microchip Technology Inc. NOTES:
2002 Microchip Technology Inc. DS21416B-page 13 TC429 Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical com- ponents in life support systems is not authorized except with express written approval by Microchip. No licenses are con- veyed, implicitly or otherwise, under any intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, FilterLab, K EELOQ, microID, MPLAB, PIC, PICmicro, PICMASTER, PICSTART, PRO MATE, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Tech- nology Incorporated in the U.S.A. and other countries. dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, MXDEV, PICC, PICDEM, PICDEM.net, rfPIC, Select Mode and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2002, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company’s quality system processes and procedures are QS-9000 compliant for its PICmicro® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001 certified.
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