TC40107BP TOSHIBA | Alldatasheet
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CMOS DIGITAL INTEGRATED CIRCUIT T0401 07BP — SILICON MONOLITHIC == ——__siuicon monoumnic EUV TC401078P DUAL 2-INPUT NAND BUFFER/DRIVER ITC40107BP is a dual 2-input NAND gate, of which output is of open-drain structure by use of N-channel MOS FET. Being capable of driving a large current, it can be directly connected to a relay, a lamp, a light-emitting diode (LED), etc. Wired OR can be lalso made. (IoL=74mA (Typ.) at Vpp=10V and VoL=0.5V) ‘The package is a compact DIP 8-pin unit, which is 8 easily mounted. a Since its output current is large, if the capacitor lof an output line exceeds 500pF, a resistor of 259 DIP 8 (3DeA-P) jor more should be used in series with the capacitor. MAXIMUM RATINGS PIN ASSIGNMENT CHARACTERISTIC RATING UNIT DC Supply Voltage Vss-0.5 ~Vgg+20 ic toot correne [nw [0 fw] ) GO robs hex. ox current [ass | 5 mm] | 8 ec m lpower Dissipation | pp | 300 S| aw | vss [2] Xe Operatii Temperature} ~ 2 ponge ine Temperacu _=40~85 gtorase Temperature 65 ~150 (T10P VIEW) Lead Temp. /Time 60°C - 10 sec CIRCUIT DIAGRAM TRUTH TABLE y 1 $ 10401078 pp INPUT. UTPUT a [os ee . re p« [21 Yes HZ : High impedance RECOMMENDED OPERATING CONDITIONS (Vss=0v) Load Capacitance, cL 500 295
STATIC ELECTRICAL CHARACTERISTICS (Vgs=0v) Movrl <1ma 5 0.05 0.00] 0.05 0.05 I OUT! < 1a Low-Level Vou! 10 0.05) 0.00] 0.05 0.05] v Output Voltage Vin=Vpp 1s 0.05 0.00] 0.05 0.05 VoL=0.4V s| 20 16] 32 14) Vor=1-0V 5s} 42 34] 68 30 VoL=0.5v 10] 46 37] 74 32 lOutput Low * . cues 1g, VoL=1.0V 10] 85 68} 136 60 mA VoL=0.5V 1s} 63 50| 100 44 Vrx=Vpp Input Low Vour=9-0V 10 3.0 4.5] 3.0 3.0 Voltage VIL Tour }<14a 7" 7 we, Fealehine Dl Pap papal [re current [apr 5 Peal saiaew [oh ~ [sal ~ far} af ao 3-State Output . " A 5 1 o.001i[ 1 7.5 Quiescent Device} ,]VIN“Vpp»Vss 10 2 0.001 2 15 Current Outputs Open . “ 15 4 0.002 4 30 * Required external pull-up register R (=20k@) 4 p reg ** All valid input combinations. 296
DYNAMIC ELECTRICAL CHARACTERISTICS (Ta=25°C, Vss=0V, C1=5OpF) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT 5 35 100 Output Transition Time . (low to High) trian | RL=1200 10 25 70 _ - _ 15. 20 50 5 35 100 output Transition Time . (igh to Low) trae | RL=1200 10 10 40 15 7 20 5 60 200 Propagation Delay Time . (low to High) tpi | Ry=1209 10 35 120 15 30 100 5 70 200 Propagation Delay Time _ Giigh to Low) tpxL | RL=1200 10 30 90 15 20 60 fine capacitance pow [Si] | | | wsput espacteance conf EF | | | CIRCUIT AND WAVEFORM FOR MEASUREMENT OF DYNAMIC CHARACTERISTICS CIRCUIT WAVEFORM zone zone gS 90% Ypp 3 INPUT V2 90% x) -—- gee 8 ‘50% 50% r 71 i LA 0%. 10% 4 oe “TH STL Poise LT» some = LW 2. J 2 10% | fl 0% ise de 297