TC281

TC281 TI | Alldatasheet

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1036- × 1010-PIXEL CCD IMAGE SENSOR SOCS058B – JUNE 1996 – REVISED MAY 1999 1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 /C0068High-Resolution, Solid-State Frame-Transfer Image Sensor /C006811.3-mm Image Area Diagonal /C00681000 (H) x 1000 (V) Active Elements /C0068Up to 30 Frames per Second /C00688-µm Square Pixels /C0068Low Dark Current /C0068Advanced Lateral-Overflow-Drain Antiblooming /C0068Single Pulse Image Area Clear Capability /C0068Dynamic Range ... More than 60 dB /C0068High Sensitivity and Quantum Efficiency /C0068Nondestructive Charge Detection Through Texas Instruments (TI ) Advanced BCD Node Technology /C0068High Near-IR and Blue Response /C0068Solid-State Reliability With No Image Burn-In, Residual Imaging, Image Distortion, Image Lag, or Microphonics

description

The TC281 is a frame-transfer charge-coupled-device (CCD) image sensor that provides a very high-resolution image acquisition capability for image-processing applications such as robotic vision, medical X-ray analysis, and metrology. The image sensing area measures 8 mm horizontally and 8 mm vertically; the image-area diagonal measures 11,3 mm and the sensor has 8-µm square pixels. The image area contains 1000 active lines with 1000 active pixels per line. The dark reference signal can be obtained from ten dark reference lines located between the image area and the storage area, 28 dark reference pixels located at the left edge of each horizontal line, and 8 dark reference pixels located at the right edge of each horizontal line. The storage section of the TC281 contains 1010 lines with 1036 pixels per line. The area is protected from exposure to light by a metal layer. Photoelectric charge that is generated in the image area of the sensor can be transferred into the storage section in less than 110 µs. After the image capture is completed (integration time), the image readout is accomplished by transferring charge, one line at a time, into the serial register located below the storage area. The serial register contains 1036 active pixels and 9 dummy pixels. The maximum serial-register data rate is 40 megapixels per second. If the storage area needs to be cleared of all charge, charge may be quickly transferred across the serial registers into the clearing drain located below the register. A high performance bulk charge detection (BCD) structure converts charge from each pixel into an output voltage. A low-noise, two-stage, source-follower amplifier further buffers the signal before it is sent to the output pin. A readout rate of 30 frames per second is easily achievable with this device. The blooming-protection of the sensor is based on an advanced lateral-overflow-drain structure (ALOD). The antiblooming function is activated when a suitable dc bias is applied to the overflow-drain pin. With this type of blooming protection it is also possible to clear the image area of charge completely. This is accomplished by providing a single 10V pulse of at least 1 µs duration to the overflow-drain pin. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright  1999, Texas Instruments Incorporated Î Î Î Î Î Î Î Î Î ÎÎÎ Î Î Î Î Î Î Î Î Î Î ÎÎÎ Î SUB 1 ODB 2 IAG 3 SUB 4 SAG 5 SAG 6 SUB 7 OUT 8 ADB 9 CDB 10 VGATE 11

22 SUB

21 TDB

20 IAG

19 SUB

18 SUB

17 SUB

15 SRG

14 TRG

13 VSOURCE

12 RST

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1036- × 1010-PIXEL CCD IMAGE SENSOR SOCS058B – JUNE 1996 – REVISED MAY 1999

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description (continued) The TC281 uses TI-proprietary advanced virtual-phase (AVP) technology, the advanced lateral-overflow-drain structure, and the BCD detection node. These features provide the TI image sensing devices with a high blue response, high near-IR sensitivity, low dark current, high photoresponse uniformity, and a single-phase clocking. The TC281 is characterized for operation from -10/C0095C to 45/C0095C. functional block diagram Top Drain Image Area Storage Area Serial Register and Transfer Gate Clearing Drain TDB

13 Amplifier

1036- × 1010-PIXEL CCD IMAGE SENSOR SOCS058B – JUNE 1996 – REVISED MAY 1999 3POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 sensor topology diagram

1000 Pixels

28 Pixels 8 Pixels

1000 Lines

10 Lines

1010 Lines

1 Pixel1 Pixel

1 Dummy Pixel

NAME NO. I/O DESCRIPTION ADB 9 I Supply voltage for amplifier-drain bias CDB 10 I Supply voltage for clearing-drain bias IAG 3, 20 I Image area gate NC 16 No connect ODB 2 I Supply voltage overflow-drain antiblooming bias OUT 8 O Output signal RST 12 I Reset gate SAG 5, 6 I Storage area gate SRG 15 I Serial register gate 1 SUB 1, 4, 7, 17, 18, 19, 22 Substrate and clock return TDB 21 NC Supply voltage for top-drain bias TRG 14 I Transfer gate VGATE 11 I Bias voltage for the gate of the BCD node VSOURCE 13 I Bias voltage for the source of the BCD node ADVANCE INFORMATION

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1010 Clocks

1046 Clocks

1010 Cycles

Figure 1. Overview of Frame Timing with Variable Integration Figure 2. Expanded Parallel Transfer Timing

Figure 3. Expanded Storage Area-to-Serial Register Transfer and Pixel Readout Timing

9525 Clocks

Figure 4. Special Modes of Operation: Storage Area Clear

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Figure 5. Special Modes of Operation: Binning node with the buffer output amplifier. to a 1000-to-1 protection against such undesirable phenomenon. protection level and trade it for the well capacity. before the start of the integration (single sided smear).

1036- × 1010-PIXEL CCD IMAGE SENSOR SOCS058B – JUNE 1996 – REVISED MAY 1999 7POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 advanced lateral overflow drain (continued) Application of a negative 2-V pulse during the parallel transfer is recommended to prevent possible artifacts from slight column-to-column pixel well capacity variations. storage area A metal light shield covers the storage area to prevent a further integration of charge when charge is being stored before readout. When the sensor is to be used in a single-shot mode and is dormant for a long period of time, it is necessary to perform multiple storage area clears to ensure the complete charge removal (see Figure 4). serial register The serial register shifts the data out of the sensor area at a maximum rate of 40 MHz, thus achieving a 1000 x 1000 pixel readout with the frame rate of 30 frames per second. The data is shifted to the BCD node on the falling edge of the SRG clocking pulses. The data can also be transferred out of the serial registers in a parallel direction to the clear drain. This allows partial line readouts. The timing for this operating mode consists of transferring the next row from the storage into the serial register while also clocking the TRG gate. Binning of multiple pixels within a column together to increase the device sensitivity is possible by multiple line transfers into the serial register prior to the register readout. The timing for this mode of operation is shown in Figure 5. Care must be taken not to exceed the well capacity of the serial register by transferring too many lines into it. Horizontal binning is also possible in this sensor. It can be accomplished in the BCD detection node by a suitable skipping of the reset pulses. bulk charge detection node and output amplifier The TC281 image sensor uses a patented TI charge detection device called the bulk charge detection node. In this structure, the signal electron packets are transferred under a uniquely designed p-channel MOS transistor where they modulate the transistor threshold voltage. The threshold voltage changes are then detected and represent the desired output signal. After sensing is completed, charge is removed from the node by applying a reset pulse. One of the key advantages of the BCD charge detection concept is that charge is sensed nondestructively. The nondestructive readout does not generate reset noise, therefore, eliminating the need for the CDS post processing. Other advantages are high speed and a very low noise. Emitter-follower output buffering is recommended for the TI image sensors. Also, it is recommended that the emitter follower be ac coupled to the rest of the signal processing chain. AC coupling eliminates problems with the sensor output dc stability and the sensor-to-sensor dc output level variations. ADVANCE INFORMATION

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the nonuniformity is specified as a percentage of the total amplitude as shown in Figure 7. Figure 6. Pixel Nonuniformity, Figure 7. Pixel Nonuniformity,

1036- × 1010-PIXEL CCD IMAGE SENSOR SOCS058B – JUNE 1996 – REVISED MAY 1999 9POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 absolute maximum ratings over operating free-air temperature (unless otherwise noted)† † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: Substrate at ground recommended operating conditions MIN NOM MAX UNIT Supply voltage, VCC ADB, CDB 11 12 13 V Supply voltage VCC Vsource 12 V Supply voltage, VCC Vgate 0 V Image area clearing Vclear 14 16 18 Supply voltage for ODB Antiblooming control Vabc 4 6 8 V Parallel transfer Vxfer Vabc–2V Supply current ADB 3.5 5 mA Substrate bias voltage 0 V Image area gate IAG High 1.5 2 2.5 Image area gate, IAG Low –10.5 –10 –9.5 Storage area gate SAG High 1.5 2 2.5 Storage area gate, SAG Low –10.5 –10 –9.5 Clock voltage Serial register gate SRG High 1.5 2 2.5 VClock voltage Serial register gate, SRG Low –10.5 –10 –9.5 V Transfer gate TRG High 1.5 2 2.5 Transfer gate, TRG Low –10.5 –10 –9.5 Reset gate RST High 5 5 8 Reset gate, RST Low 0 0 0.5 IAG, SAG 5 10 Clock frequency, fclock SRG RST 40 MHz TRG 5 10 ADVANCE INFORMATION

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electrical characteristics over recommended ranges of supply voltage and operating free-air temperature PARAMETER MIN TYP MAX UNIT Dynamic range (see Note 2) 62 dB Charge-conversion factor 10 µV/e Charge-transfer efficiency (see Note 3) 0.99990 0.99995 1 Signal-response delay time, Tau (see Note 4) 7 ns Output resistance 310 400 Ω Noise-equivalent signal 12 25 electrons Supply current (see Note 5) IDD 3.5 5 mA IAG 14500 SAG 14500 Capacitance SRG 52 pF TRG 50 RST 5.5 † All typical values are used at TA = 25°C. NOTES: 2. Dynamic range is –20 times the logarithm of the mean-noise signal divided by the saturation-output signal. 3. Charge-transfer efficiency is one minus the charge loss per transfer in the output register. The test is performed in the dark using an electrical input signal. 4. Signal-response delay time is the time between the falling edge of the SRG pulse and the output-signal valid state. 5. VADC at 12 V and VSUBSTRATE at ground. optical characteristics PARAMETER MIN TYP MAX UNIT Sensitivity (see Note 6) No IR filter 240 mV/luxSensitivity (see Note 6) With IR filter 30 mV/lux Saturation signal, Vsat (see Note 7) Antiblooming off 320 mV Blooming overload ratio (see Note 8) 300 1000 Image-area well capacity 32K electrons Smear at 5 MHz (see Notes 9 and 10) 0.06% Dark current TA = 21°C 0.4 nA/cm2 Electronic-shutter capability 1/1000 1/30 Saturation sec NOTES: 6. Based on 16.67 ms integration time. 7. Saturation is the condition in which further increases in exposure do not lead to further increase in output signal. 8. Blooming-overload ratio is the ratio of blooming exposure to saturation exposure. 9. Smear is a measure of the error introduced by transferring charge through an illuminated pixel in shutterless operation. It is equivalent to the ratio of the single-pixel transfer time to the exposure time using an illuminated section that is 1/10 of the image-area vertical height with recommended clock frequencies. 10. The exposure time is 16.67 ms, the fast dump clocking rate during vertical timing is 10 MHz, and the illuminated section is 1/10 of the height of the image section. ADVANCE INFORMATION

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Figure 10. Typical Spectral Quantum Efficiency

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APPLICATION INFORMATION

NOTES: A. TI recommends designing AC coupled systems. B. Inputs from user defined timer C. Decoupling capacitors are not shown SUB ODB IAG SUB SAG SAG SUB OUT ADB CDB VGATE SUB TDB IAG SUB SUB SUB NC SRG TRG VSOURCE RST AB_IN CLR_IN IAG_IN SAG_IN SRG_IN TRG_IN ODB Discrete ODB Driver IAG SAG Discrete Driver RST_IN SRG TRG RST VDD VDD Discrete Serial Driver AB CLR IAG SAG SRG TRG RST ccd ANALOG OUT (AC Coupled) 3Q1 NPN 100 1 kΩ 100 kΩ Figure 11. Typical Application Circuit Table 1. Supply Voltages for Application Circuits

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NOTES: A. MOSFET driver with a 4A peak current and 2 Ω output resistance (see Figure 14). B. Image area clear (CLR) is active high while the parallel transfer (AB) is active low. These two pulses will generate the timing for ODB, as shown in Figure 1. C. Decoupling capacitors are not shown IN NC P-OUT 4A pk FET Driver CLR –V –V N-OUT 0.22 µF 0.22 µF IN NC P-OUT 4A pk FET Driver AB –V –V N-OUT 0.22 µF 0.022 µF 200 K Ω 1 kΩ 3.83 kΩ 3.24 kΩ ODB VDD VDD VDD Figure 12. Typical ODB Driver Circuit

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NOTES: A. MOSFET driver with a 4A peak current and 2 Ω output resistance (see Figure 13). B. Decoupling capacitors are are not shown. IN NC P-OUT 4A pk FET Driver –V –V N-OUT VCC R17 806 Ω R18 1 kΩ PNP IAG IAG_IN VAA IN NC P-OUT 4A pk FET Driver –V –V N-OUT VCC R19 806 Ω R20 1 kΩ PNP SAG SAG_IN VAA Figure 15. Typical Parallel Driver Circuit

1036- × 1010-PIXEL CCD IMAGE SENSOR SOCS058B – JUNE 1996 – REVISED MAY 1999 17POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 MECHANICAL DATA The package for the TC281 consists of a ceramic base, a glass window, and a 22-lead frame. The package leads are configured in a dual in-line organization and fit into mounting holes with 2,54 mm (0.10 in) center-to-center spacing. The glass window is sealed to the package by an epoxy adhesive. It can be cleaned by any standard procedure for cleaning optical assemblies or by wiping the surface with a cotton swab moistened with alcohol. Optical Center Index Dot Pin 1 Package Center Ô Ô Ó Ó Ó Ó ÔÔ ÔÔ ÔÔ ÔÔ Ó Ó Ó 17.90 17.40 9.51 9.21 28.22 27.66 25.13 24.87 16.60 16.40 1.00 0.90 0.508 2.10 1.70 1.12 0.92 3.22 2.62 18.03 17.53 0.30 0.20 0.76 0.16 5.10 3.50 0.56 0.46 2.67 2.41 Package Center 0.08 ±0.08 0.08 ±0.08 TC281 (22 pin) NOTES: A. All linear dimensions are in millimeters. B. Single dimensions are nominal. C. The center of the package and the center of the image area are not coincident. D. Each pin centerline is located within 0,25 mm (0.010 in) of its true longitudinal position. ADVANCE INFORMATION

Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE FULLY AT THE CUSTOMER’S RISK. In order to minimize risks associated with the customer’s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI’s publication of information regarding any third party’s products or services does not constitute TI’s approval, warranty or endorsement thereof. Copyright  1999, Texas Instruments Incorporated