TC277 TI | Alldatasheet

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735- × 580-PIXEL CCD IMAGE SENSOR SOCS020B – DECEMBER 1991 Copyright  1991, Texas Instruments Incorporated 1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

  • High-Resolution, Solid-State Image Sensor for PAL B/W TV Applications
  • 8-mm Image-Area Diagonal, Compatible With 1/2” Vidicon Optics
  • 699 (H) x 288 (V) Active Elements in Image-Sensing Area
  • Low Dark Current
  • Electron-Hole Recombination Antiblooming
  • Dynamic Range . . . More Than 70 dB
  • High Sensitivity
  • High Photoresponse Uniformity
  • High Blue Response
  • Single-Phase Clocking
  • Solid-State Reliability With No Image Burn-in, Residual Imaging, Image Distortion, Image Lag, or Microphonics

description

The TC277 is a frame-transfer charge-coupled device (CCD) image sensor designed for use in single-chip B/W PAL TV applications. The device is intended to replace a 1/2-inch vidicon tube in applications requiring small size, high reliability, and low cost. The image-sensing area of the TC277 is configured into 288 lines with 699 elements in each line. Thirty-three elements are provided in each line for dark reference. The blooming-protection feature incorporated into the sensor is based on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated by supplying clocking pulses to the antiblooming gate, which is an integral part of each image-sensing element. The sensor is designed to operate in an interlace mode, electronically displacing the image-sensing elements by one-half of a vertical line during the charge-integration period in alternate fields, and effectively increasing the vertical resolution and minimizing aliasing. The device can also be run as a 732 (H) by 288 (V) noninterlaced sensor with significant reduction in the dark signal. The image is read out through three outputs, each of which reads out every third column. A gated floating-diffusion detection structure with an automatic reset and voltage reference incorporated on-chip converts charge to signal voltage. A low-noise, two-stage, source-follower amplifier buffers the output and provides high output-drive capability. The TC277 is built using TI-proprietary virtual-phase technology, which provides devices with high blue response, low dark current, high photoresponse uniformity, and single-phase clocking. The TC277 is characterized for operation from –10°C to 45°C. This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments. SUB 1 IAG 2 ABG 3 TDB 4 OUT3 5 OUT2 6 OUT1 7 AMP GND 8 ADB 9 SUB 10

20 SUB

19 IAG

18 ABG

17 SAG

16 IDB

15 SRG3

14 SRG2

13 SRG1

12 TRG

11 CDB

(TOP VIEW) PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

735- × 580-PIXEL CCD IMAGE SENSOR SOCS020B – DECEMBER 1991

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11 Dummy

735- × 580-PIXEL CCD IMAGE SENSOR SOCS020B – DECEMBER 1991 3POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 sensor topology diagram Area Image-Storage Area Image-Sensing288 Lines Image-Sensing Area

11 Dark Pixels11 Dummy Pixels 233

2 Columns 34 Columns

I/O DESCRIPTIONNAME NO. I/O DESCRIPTION ABG † 3 I Antiblooming gate ABG † 18 I Antiblooming gate ADB 9 I Supply voltage for amplifier-drain bias AMP GND 8 Amplifier ground CDB 11 I Supply voltage for clearing-drain bias IAG† 2 I Image-area gate IAG† 19 I Image-area gate IDB 16 I Supply voltage for input-diode bias OUT1 7 O Output signal 1 OUT2 6 O Output signal 2 OUT3 5 O Output signal 3 SAG 17 I Storage-area gate SRG1 13 I Serial-register gate 1 SRG2 14 I Serial-register gate 2 SRG3 15 I Serial-register gate 3 SUB † 1 Substrate and clock return SUB † 10 Substrate and clock return SUB † 20 Substrate and clock return TDB 4 I Supply voltage for top-drain bias TRG 12 I Transfer gate † All pins of the same name should be connected together externally.

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charge-detection nodes. Location of each of these blocks is shown in the functional block diagram. of integration, the signal charge is transferred into the storage area. image-sensing area into the image-storage area. operation or under special circumstances when nonstandard TV operation is desired. Figure 4. This circuit consists of a low-pass filter formed by Q1 and C2, coupling-capacitor C1, dummy-detection output-buffer Q6. Transistors Q2, Q4, and Q7 are current sources for each corresponding stage of the amplifier. and maximize the video signal. dummy elements, which are considered to be part of the amplifiers, is shown on the functional block diagram.

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Figure 3. Timing Diagram

Figure 4. Correlated-Clamp Sample-and-Hold Amplifier and Charge-Detection Nodes

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  • Amplitude of the nonuniform pixel
  • Polarity of the nonuniform pixel – Black – White
  • Location of the nonuniformity (see Figure 5) – Area A – Element columns near horizontal center of the area – Element rows near vertical center of the area – Area B – Up to the pixel or line border – Up to area A – Other – Edge of the imager – Up to area B
  • Nonuniform pixel count
  • Distance between nonuniform pixels
  • Column amplitude The CCD sensors are characterized in both an illuminated condition and a dark condition. In the dark condition, the nonuniformity is specified in terms of absolute amplitude as shown in Figure 6. In the illuminated condition, the nonuniformity is specified as a percentage of the total illumination as shown in Figure 7. BA

17 Pixels

13 Lines

9 Lines

Figure 5. Sensor-Area Map

Figure 6. Pixel Nonuniformity, Figure 7. Pixel Nonuniformity, pixels in the illuminated condition. The sum of all nonuniform combinations do not exceed the total count.

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absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltage values are with respect to the substrate terminal. recommended operating conditions MIN NOM MAX UNIT Supply voltage, VCC ADB, CDB, IDB, TDB 12 V Substrate bias voltage 0 V High level 1.5 2 2.5 IAG Intermediate level§ –5.7 Low level –11 –9 SRG1 SRG2 SRG3 High level 1.5 2 2.5 SRG1 , SRG2 , SRG3 Low level –11 –9 Input voltage V‡ High level 2 4 6 VInput voltage, VI‡ ABG Intermediate level§ –2.3 V Low level –7 SAG High level 1.5 2 2.5 SAG Low level –11 –9 TRG High level 1.5 2 2.5 TRG Low level –11 –9 IAG, SAG 3.34 Clock frequency, fclock SRG1, SRG2, SRG3, TRG 4.46 MHz ABG 3.34 Load capacitance OUT1, OUT2, OUT3 6 pF Operating free-air temperature, TA –10 45 °C ‡ The algebraic convention, in which the least-positive (most negative) value is designated minimum, is used in this data sheet for clock voltage levels. § Adjustment is required for optimal performance.

735- × 580-PIXEL CCD IMAGE SENSOR SOCS020B – DECEMBER 1991 11POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics over recommended operating ranges of supply voltage and operating free-temperature (unless otherwise noted) PARAMETER MIN TYP † MAX UNIT Dynamic range (see Note 2) Antiblooming disabled (see Note 3) 60 70 dB Charge-conversion factor 3.8 4 4.2 µV/e Charge-transfer efficiency (see Note 4) 0.99990 0.99995 1 Signal-response delay time, τ (see Note 5 and Figure 11) 18 20 22 ns Gamma (see Note 6) 0.97 0.98 0.99 Output resistance 700 800 Ω Noise voltage 1/f noise (5 kHz) 0.1 µV/√HzNoise voltage Random noise (f = 100 kHz) 0.08 µV/√H z Noise-equivalent signal 25 electrons ADB (see Note 7) 20 Rejection ratio at 4.46 MHz SRG1, SRG2, SRG3 (see Note 8) 40 dB ABG (see Note 9) 20 Supply current 5 mA IAG 6500 SRG1, SRG2, SRG3 68 Input capacitance, Ci ABG 2400 pF TRG 180 SAG 6800 † All typical values are at TA = 25 °C. NOTES: 2. Dynamic range is –20 times the logarithm of the mean-noise signal divided by the saturation-output signal. 3. For this test, the antiblooming gate must be biased at the intermediate level. 4. Charge-transfer efficiency is one minus the charge loss per transfer in the output register. The test is performed in the dark using an electrical-input signal. 5. Signal-response delay time is the time between the falling edge of the SRG clock pulse and the output-signal valid state. 6. Gamma ( γ) is the value of the exponent in the equation below for two points on the linear portion of the transfer-function curve (this value represents points near saturation): /C0466Exposure (2) Exposure (1)/C0467 /C0103 /C0043/C0466Output signal (2) Output signal (1)/C0467 7. ADB rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ADB. 8. SRGn rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at SRGn. 9. ABG rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ABG.

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optical characteristics, TA = 40°C (unless otherwise noted) PARAMETER MIN TYP MAX UNIT Sensitivity No IR filter Measured at VU 242 mV/lxSensitivity With IR filter Measured at VU(see Notes 10 and 11) 30 mV/lx Saturation signal, Vsat (see Note 12) Antiblooming disabled, interlace off 320 mV Maximum usable signal, Vuse Antiblooming enabled, interlace on 200 mV Blooming overload ratio (see Note 13) Interlace on 150 Blooming-overload ratio (see Note 13) Interlace off 300 Image-area well capacity 80 x 103 electrons Smear (see Note 14) See Note 15 0.0004 Dark current Interlace off TA = 21°C 0.027 nA/cm2 Dark signal (see Note 16) TC277-30 6.6 mVDark signal (see Note 16) TC277-40 7.2 mV Pixel uniformity Output signal = 50 mV±10 mV TC277-30 3.5 mVPixel uniformity O utput signal = 50 mV ±10 mV TC277-40 5 mV Column uniformity Output signal = 50 mV±10 mV TC277-30 0.5 mVColumn uniformity O utput signal = 50 mV ±10 mV TC277-40 0.7 mV Shading Output signal = 100 mV 15% NOTES: 10. Sensitivity is measured at an integration time of 20.03 ms with a source temperature of 2856 K. A CM-500 filter is used. 11. VU is the output voltage that represents the threshold of operation of antiblooming. VU ≈ 1/2 saturation signal. 12. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal. 13. Blooming-overload ratio is the ratio of blooming exposure to saturation exposure. 14. Smear is a measure of the error induced by transferring charge through an illuminated pixel in shutterless operation. It is equivalent to the ratio of the single-pixel transfer time during a fast dump to the exposure time using an illuminated section that is 1/10 of the image-area vertical height with recommended clock frequencies. 15. Exposure time is 20 ms and the fast-dump clocking rate during vertical timing is 3.34 MHz. 16. Dark-signal level is measured from the dummy pixels.

Figure 8. Typical Vsat, Vuse Relationship

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Figure 9. Typical Clock Waveform for ABG, IAG, and SAG Figure 10. Typical Clock Waveform for SRG1, SRG2, SRG3, and TRG Figure 11. SRG and CCD Output Waveforms

735- × 580-PIXEL CCD IMAGE SENSOR SOCS020B – DECEMBER 1991 15POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TYPICAL CHARACTERISTICS 0.01 0.001 0.1 700 800 900 Responsivity – A/W Incident Wavelength – nm CCD SPECTRAL RESPONSIVITY 400 500 600 1000 1100 VDD = 12 V, TA = 25°C No IR Filter Light Power = 1.5 µW/cm 2 Light Box: Canon SA702 Quantum Efficiency – % 100 300 Figure 12

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APPLICATION INFORMATION

4.7 µF OUT1 OUT3 OUT2 2021222324252627282930 5655545352515049484746 ADB VABG– ABLVL VABG+V IALVL VSS 22 kΩ 47 kΩ 4.7 µF 4.7 µF 4.7 µF 100 Ω 100 Ω 100 Ω TMS3473B Parallel Driver

13.37 MHz

V ABLVL IALVL VABG + VABG – 12 V 5 V – 10 V 2 V –3 V –5 V 4 V –7 V DC VOLTAGES SN28846 Serial Driver IALVL I/N IAIN ABIN MIDSEL SAIN PD GND VABG+ VSS VSS IASR ABSR VCC ABLVL IAOUT ABOUT SAOUT VCC VABG– SEL1OUT GND PD SRG3IN SRG2IN SRG1IN TRGIN NC SEL2OUT VSS VSS SEL1 NC VCC SRG3OUT SRG2OUT SRG1OUT TRGOUT VCC SEL2 SUB IAG ABG SAG IDB SRG3 SRG2 SRG1 TRG CDB SUB IAG ABG TDB OUT3 OUT2 OUT1 AMP GND ADB SUB ANLGV CC AIN1 CIN1 AIN2 CIN2 AIN3 CIN3 ANLGGND S/H S/H2 DIGV CC OUT1 OUT2 OUT3 DGTLGND S/H3 NC VCC BCP1 NC TESTB GND NC T VCC1 GND VCC PI ABIN GT PS NC CLK13M LSW PD CLK SH1 NC GT3/SH2 NC NC GT1/SH3 GT2 VCR HCR BCP2 CP1 CP2 CSYNC CBLK BF VD SCBLK IDP HGATE TESTA FI SFI SB VD2 GP GPS HIGH V ABS2 ABS1 ABS0 NCVGATE E/L VDS TESTC CC Figure 13. Typical Application Circuit Diagram † Decoupling capacitors are not shown. ‡ TI recommends designing AC coupled systems.

735- × 580-PIXEL CCD IMAGE SENSOR SOCS020B – DECEMBER 1991 17POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 DEVICE PACKAGE APPLICATION FUNCTION SN28837FS 60 pin flatpack Timing generator PAL timing SN28846DW 20 pin small outline Serial driver Driver for TRG, SRG1, SRG2, SRG3 TMS3473BDW 20 pin small outline Parallel driver Driver for IAG, SAG, and ABG TL1593CNS 16 pin SO (EIAJ) Sample and hold Three-channel sample and hold Figure 13. Typical Application Circuit Diagram (Continued)

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The package for the TC277 consists of a ceramic base, a glass window, and a 20-lead frame. The glass window is sealed to the package by an epoxy adhesive. The package leads are configured in a dual-in-line organization and fit into mounting holes with 1,78 mm (0.070 in) center-to-center spacings. 0,33 (0.013) 0,17 (0.007) 1,65 (0.065) 1,91 (0.075) 0,41 (0.016) 0,51 (0.020) 3,90 (0.154) 5,50 (0.217) 0,76 (0.030) 1,78 (0.070) Rotation ± 90° 7,20 (0.283) 7,60 (0.299) Center Package Center Optical 15,44 (0.608) 15,64 (0.616)MAX 18,30 (0.720) 13,87 (0.546) 13,67 (0.538) 4,01 (0.158) MAX 15,54 (0.612) 14,94 (0.588) 1,70 (0.067) 1,10 (0.043) Focus Plane 6,50 (0.256) 6,10 (0.240) ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES TC277 (20 pin) Index Mark 15,14 (0.596) 14,84(0.584) 3,38 (0.133) 2,72 (0.107) NOTES: A. The center of the package and the center of image area not coincident. and has an index of refraction of 1.53. C. Each pin centerline is located within 0.18 mm of its true longitudinal position. D. Maximum rotation of the sensor within the package is 1.5°.

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