TC271

TC271 TI1 | Alldatasheet

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1080 × 580-PIXEL CCD IMAGE SENSOR SOCS039A – JANUARY 1994 – REVISED JUNE 1996 Copyright  1996, Texas Instruments Incorporated 1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

• High-Resolution, Solid-State Monochrome Image Sensor for Video or Still-Picture Photography
• Frame Transfer With Two Field Memories Allows Multimode Operation
• 1044 (H) x 576 (V) Active Elements in Image-Sensing Area
• 11-mm Image-Area Diagonal Is Compatible With 2/3” Vidicon Optics
• Fast-Clear Capability
• Electron-Hole Recombination Antiblooming
• Dynamic Range . . . More Than 60 dB
• High Photoresponse Uniformity
• On-Chip Cross-Coupled Resets for Easy Off-Chip Implementation of CCSH Video- Signal Processing
• Solid-State Reliability With No Image Burn-in, Residual Imaging, Image Distortion, Image Lag, or Microphonics
• Low Dark Current

description

The TC271 is a frame-transfer charge-coupled-device (CCD) image sensor with two field memories. It is suitable for use in PAL-video or still-picture photography applications. Its image-sensing area is configured into 580 lines; 576 of these are active and the remaining four are used for dark reference. Each line is configured into 1080 pixels with 1044 active and 36 for dark reference. The TC271 has a standard aspect ratio of 4:3 and a standard 11-mm image-sensing-area diagonal. Its blooming protection, which is an integral part of each pixel, is based on electron-hole recombination and is activated by clocking the antiblooming gate. One important aspect of the TC271 high-resolution sensor is its ability to simultaneously capture both fields of a TV frame. Its two independently addressable memories allow separate storage of each field and operation in a variety of modes, including CCIR with true interlace, CCIR with pseudointerlace, progressive scan, and nonstandard pseudointerlace with a resolution of 1152 lines. A unique multiplexer section (see Figure 1) rearranges the horizontal pixels into vertical groups of three and separates and loads the image into the two field memories. The independent addressing of each field memory provides flexibility for different modes of operation. The interdigitated layout of the memories allows each memory to share the same bank of three serial registers and associated charge-detection amplifiers (see Figure 2 and the functional block diagram). Each register and associated amplifier reads out every third column of the image area (see Figure 3). The three amplifiers are optimized dual-source followers that allow the use of off-chip double correlated-clamp sample-and-hold amplifiers for removing KTC noise. The TC271 is built using TI-proprietary virtual-phase technology, which provides devices with high blue response, low dark current, high photoresponse uniformity, and single-phase clocking. The TC271 is characterized for operation from –10°C to 40°C. This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments. SUB CDB AMP GND OUT1 OUT2 OUT3 ADB SAG1 IAG ABG SUB SUB TRG SRG1 SRG2 SRG3 SAG2 TMG IAG ABG TDB SUB 1211 DUAL-IN-LINE PACKAGE (TOP VIEW) ADVANCE INFORMATION concerns new products in the sampling or preproduction phase of development. Characteristic data and other specifications are subject to change without notice.

1080 × 580-PIXEL CCD IMAGE SENSOR SOCS039A – JANUARY 1994 – REVISED JUNE 1996

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ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ Storage Area Blooming Protection Image Area With Top Drain

12 Dummy

3:2 Multiplexer Transfer Gates and Serial Registers

1080 × 580-PIXEL CCD IMAGE SENSOR SOCS039A – JANUARY 1994 – REVISED JUNE 1996 3POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 sensor topology diagram ÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ 1/2 Dark Pixel

4 Dark Lines

576 Active Lines

870 Lines

34 Dark Pixels

1080 Pixels

1044 Active Pixels

1 Dark Pixel

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NAME NO. I/O DESCRIPTION ABG † 2 I Antiblooming gate ABG † 20 I Antiblooming gate ADB 5 I Supply voltage for amplifier-drain bias AMP GND 9 Amplifier ground CDB 10 I Supply voltage for clearing-drain bias IAG† 3 I Image-area gate IAG† 19 I Image-area gate OUT1 8 O Output signal 1 OUT2 7 O Output signal 2 OUT3 6 O Output signal 3 SAG1 4 I Storage-area gate SAG2 17 I Storage-area gate SRG1 14 I Serial-register gate 1 SRG2 15 I Serial-register gate 2 SRG3 16 I Serial-register gate 3 SUB † 1 Substrate and clock return SUB † 11 Substrate and clock return SUB † 12 Substrate and clock return SUB † 22 Substrate and clock return TDB 21 I Supply voltage for top-drain bias TMG 18 I Transfer-multiplex gate TRG 13 I Transfer gate † All pins of the same name should be connected together externally (i.e., pin 2 to pin 20, pin 3 to pin 19, etc.). detailed description The TC271 consists of five basic functional blocks: (1) the image-sensing area, (2) the multiplexer block, (3) the image-storage area with dual-field memories, (4) the serial-register and transfer gates, and (5) the low-noise signal-processing amplifier block with charge-detection nodes. The location of each of these blocks is identified in the functional block diagram. image-sensing area Figure 4 and Figure 5 show cross sections with potential-well diagrams and top views of image-sensing elements. As light enters the silicon in the image-sensing area, free electrons are generated and collected in the potential wells of the sensing elements. During this time, blooming protection is activated by applying a burst of pulses to the antiblooming-gate inputs every horizontal-blanking interval. This prevents blooming caused by the spilling of charge from overexposed elements into neighboring elements. Thirty-four full columns and one half-column of elements at the right edge of the image-sensing area are shielded from incident light; these elements provide the dark reference used in subsequent video-processing circuits to restore the video-black level. There are also one full column and one half-column of light-shielded elements at the left edge of the image-sensing area and four lines of light-shielded elements at the bottom of the image area immediately above the multiplexer. The latter prevent charge leakage from the image area into the multiplexer.

1080 × 580-PIXEL CCD IMAGE SENSOR SOCS039A – JANUARY 1994 – REVISED JUNE 1996 5POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 multiplexer and image-storage area After integration, the multiplexer rearranges two horizontal lines into vertical groups of three and separates and loads the image into the storage area. Figure 1 shows the layout of the multiplexer gate and its interface to the two field memories. Figure 2 shows the interface region between the storage area and the three serial registers. A drain is also provided to clear the image-sensing and image-storage areas of unwanted charge. Such charge can accumulate in the imager during the startup of operation or under special circumstances when nonstandard TV operation is desired. The sensor’s independently addressable memories allow several different modes of sensor operation including (1) a normal-light mode, (2) a low-light mode, (3) a still mode, and (4) a progressive-scan mode. The timing for these four modes is given in Figure 6 through Figure 9. The parallel-transfer timing is shown in Figure 10. serial registers and amplifiers After transfer to the serial registers (see Figure 11, which shows the horizontal timing that gives the necessary sequence of pulses for transfer from the storage area to the serial registers), the charge is converted to a signal voltage at the sense node and buffered with a dual-stage source follower. The three serial registers are typically clocked 120 degrees out of phase with each serial-gate pulse supplying a detection-node reset signal for one of the other two serial gates (see Figure 12). The readout timing, which includes the three serial pulses and the pixel-clamp pulses used in an off-chip double-correlated sampling circuit, is shown in Figure 13. The detection nodes and amplifiers are located some distance from the edge of the storage area. Twelve dummy elements are incorporated at the end of each serial register to span the distance. The location of the dummy elements, which are considered to be part of the amplifiers, is shown in the functional block diagram. A schematic of the detection node and amplifier is given in Figure 3.

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580 Lines

Figure 1. Layout of Multiplexing Gate

Figure 2. Layout of the Interface Region Between the Memories and the Serial Registers

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Figure 3. Circuit Diagram – Charge-Detection Amplifiers

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Figure 6. Vertical Timing, Normal-Light Mode Figure 7. Vertical Timing, Low-Light Mode Figure 8. Vertical Timing, Still Mode

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† These clocks are mode-dependent. Figure 11. Horizontal Timing Figure 12. Start of Serial-Transfer Timing

phase shifted 120° relative to OUT2, and so forth. Figure 13. Video-Process Timing

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• Amplitude of the nonuniform pixel
• Polarity of the nonuniform pixel – Black – White
• Column amplitude The CCD sensors are characterized in both an illuminated condition and a dark condition. In the dark condition, the nonuniformity is specified in terms of absolute amplitude as shown in Figure 14. In the illuminated condition, the nonuniformity is specified as a percentage of the total illumination as shown in Figure 15. The nonuniformity specification for the TC271 is as follows (CCD video-output signal is 50 mV ±10 mV): PIXEL NONUNIFORMITY COLUMN NONUNIFORMITY PART NUMBER DARK CONDITION ILLUMINATED CONDITION PIXEL AMPLITUDE, x (mV) % OF TOTAL ILLUMINATION TC271-30 x ≤ 12 mV x ≤ 10 x < 0.5 mV TC271-40 x ≤ 15 mV x ≤ 15 x ≤ 1m V mV Amplitude t Illumination % of Total t

Figure 14. Pixel Nonuniformity, Figure 15. Pixel Nonuniformity,

1080 × 580-PIXEL CCD IMAGE SENSOR SOCS039A – JANUARY 1994 – REVISED JUNE 1996 15POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltage values are with respect to the substrate terminal. recommended operating conditions MIN NOM MAX UNIT Supply voltage, VCC ADB, CDB, TDB 11 12 13 V Substrate bias voltage 0 V IAG High level 2 2.5 3 IAG Low level –11 –9 SAG1 SAG2 High level 2 2.5 3 SAG1 , SAG2 Low level –11 –9 SRG1 SRG2 SRG3 High level 2 2.5 3 SRG1 , SRG2 , SRG3 Low level –11 –9 Input voltage, VI‡ TMG High level 2 2.5 3 V TMG Low level –11 –9 High level 4 4.5 5 ABG Intermediate level§ –2.85 –2 –1.55 Low level –7.5 –7 –6.5 TRG High level 2 2.5 3 TRG Low level –11 –9 ABG 0.625 IAG 1.11 Clock frequency, fclock SAG1, SAG2, TMG 6.67 MHz SRG1, SRG2, SRG3 6.67 TRG 1.67 Load capacitance OUT1, OUT2, OUT3 8 pF Operating free-air temperature, TA –10 40 °C ‡ The algebraic convention, in which the least-positive (most negative) value is designated minimum, is used in this data sheet for clock voltage levels. § Adjustment is required for optimal performance.

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electrical characteristics over recommended operating ranges of supply voltage and operating free-air temperature (unless otherwise noted) PARAMETER MIN TYP † MAX UNIT Dynamic range (see Note 2) 60 dB Charge-conversion factor 6.5 µV/e Charge-transfer efficiency (see Note 3) 0.9999 0.99995 1.000 Signal-response delay time, τ (see Note 4 and Figure 19) 18 20 22 ns Gamma (see Note 5) 0.89 0.94 0.99 Output resistance 350 Ω Noise voltage 1/f noise (5 kHz) 0.1 µV/√HzNoise voltage Random noise (f = 100 kHz) 0.08 µV/√H z Noise-equivalent signal 15 electrons ADB (see Note 6) 20 Rejection ratio at 4.77 MHz SRGn (see Note 7) 40 dB ABG (see Note 8) 30 Supply current 4 mA IAG 12000 SAG1, SAG2 11000 Input capacitance Ci ABG 4600 pFInput capacitance, C i TMG 120 pF TRG 160 SRG1, SRG2, SRG3 80 † All typical values are at TA = 25 °C. NOTES: 2. Dynamic range is –20 times the logarithm of the mean-noise signal divided by the saturation-output signal. 3. Charge-transfer efficiency is one minus the charge loss per transfer in the output register. The test is performed in the dark using an electrical-input signal. 4. Signal-response delay time is the time between the falling edge of the SRG clock pulse and the output-signal valid state. 5. Gamma ( γ) is the value of the exponent in the equation below for two points on the linear portion of the transfer-function curve: /C0466Exposure (2) Exposure (1)/C0467 /C0103 /C0043/C0466Output signal (2) Output signal (1)/C0467 6. ADB rejection ratio is –20 times the logarithm of the ac amplitude on OUTn divided by the ac amplitude on ADB. 7. SRGn rejection ratio is –20 times the logarithm of the ac amplitude on OUTn divided by the ac amplitude on SRGn. 8. ABG rejection ratio is –20 times the logarithm of the ac amplitude on OUTn divided by the ac amplitude on ABG.

1080 × 580-PIXEL CCD IMAGE SENSOR SOCS039A – JANUARY 1994 – REVISED JUNE 1996 17POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 optical characteristics, TA = 25°C , exposure time = 40 ms (unless otherwise noted) PARAMETER MIN TYP MAX UNIT Sensitivity (see Notes 9 and 10) No IR filter 400 mV/lxSensitivity (see Notes 9 and 10) With IR filter 52 mV/lx Saturation signal, Vsat (see Note 11) 410 mV Image-area well capacity 70 x 103 electrons Blooming-overload ratio (see Note 12)Exposure time = 1/50 second 125 Smear (see Notes 13 and 14) 0.0014 Output-signal uniformity VO = 1/2 VU (see Note 10) 1 mV Dark-signal (see Note 15) TA = 40°C 5 6 mV Dark-signal uniformity TA = 40°C 0.3 mV Dark current TA = 21°C 100 pA/cm2 NOTES: 9. Sensitivity is measured at any illumination level that gives an output voltage level less than VU . A CM-500 filter is used. 10. VU is the output voltage that represents the threshold of operation of antiblooming. VU ≈ 1/2 saturation signal. 11. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal. 12. Blooming is the condition in which charge is induced in an element by light incident on another element. Blooming-overload ratio is the ratio of blooming exposure to saturation exposure. 13. Smear is the measure of error induced by transferring charge through an illuminated pixel in shutterless operation. It is equivalent to the ratio of the single-pixel transfer time during a fast dump to the exposure time using an illuminated section that is 1/10 of the image-area vertical height with recommended clock frequencies. 14. The fast-dump clocking rate during vertical timing is 1.0 MHz, and the illuminated section is 1/10 of the height of the image section. 15. Dark-signal level is measured from the dark dummy pixels.

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NOTES: A. V use (typ) is defined as the voltage determined to equal the camera white clip. This voltage must be less than Vuse (max). the light sensitivity of the camera is increased; however, this sacrifices the signal/noise ratio of the camera. Figure 16. Typical Vsat, Vuse Relationship

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APPLICATION INFORMATION

1 kΩ 100 Ω OUT 2 12 V 12 V 1211 Master Oscillator GND VCC GND OUT V CC VSS User-Defined Timer TRG SRG1 SRG2 SRG3 GT ABG IAG MEMA TMG MEMB SH1 SH2 SH3 CSYNC PC1 PC2 CBLNK CLK SH2 SH3 PC1 PC2 CBLNK VSS VSS VCC SEL1 VCC TRGOUT SRG1OUT SRG2OUT SRG3OUT VCC NC SEL0 VSS VSS SEL1OUT NC TRGIN SRG1IN SRG2IN SRG3IN PD GND SEL0OUT 1110 IALVL I/N IAIN ABIN MIDSEL SAIN PD GND IASR ABSR VCC ABLVL IAOUT ABOUT SAOUT VCC VABG – 1110 VABG – VCC VCC V 10 11 VABG – VCC SAOUT ABOUT IAOUT ABLVL VCC ABSR IASR GND PD SAIN MIDSEL ABIN IAIN I IALVL V 100 Ω Parallel Driver 1 kΩ OUT 1 12 V 100 Ω 1 kΩ VABG + 47 kΩ 20 kΩ 47 kΩ 20 kΩ ABLVL PC3PC3 CSYNC SH1 2N3904 2N3904 2N3904 TC271 VSS VSS IALVL VABG+ VABG+ TMS3473B Parallel Driver TMS3473B SN28846 Serial Driver Image Sensor VCC VSS V ABLVL VABG + VABG – IALVL 5 V – 10 V 2 V – 1.5 V 4 V –6 V –5 V DC VOLTAGES (see Note B) (see Note B) (see Note B) SUPPORT CIRCUITS DEVICE PACKAGE APPLICATION FUNCTION SN28846DW 20 pin small outline Serial driver Driver for SRG1, SRG2, SRG3, and TRG TMS3473BDW 20 pin small outline Parallel driver Driver for IAG, SAG1, SAG2, ABG, and TMG Figure 20. Typical Application Circuit Diagram NOTES: A. Decoupling capacitors are not shown. B. TI recommends designing AC coupled systems.

1080 × 580-PIXEL CCD IMAGE SENSOR SOCS039A – JANUARY 1994 – REVISED JUNE 1996 21POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 MECHANICAL DATA The package for the TC271 consists of a ceramic base, a glass window, and a 22-lead frame. The package leads are configured in a dual in-line organization and fit into mounting holes with 2.54 mm (0.10 in) center-to-center spacings. The glass window is sealed to the package by an epoxy adhesive. It can be cleaned by any standard procedure for cleaning optical assemblies or by wiping the surface with a cotton swab moistened with alcohol. (0.217 ± 0.030) 5,50 ± 0,76 3,86 (0.152) MAX Optical Center 27,81 (1.095) MAX 8,00 (0.315) 23,39 (0.921) 0,25 (0.010) 10,16 (0.400) TYP 2,21 (0.087) MAX(0.730) 18,54 2,01 (0.079) Index Dot 9,35 (0.368) REF 0,46 (0.018) 2,54 (0.100) 18,24 (0.718) 2,01 x 2,39 (0.079 x 0.094) ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES CLOptical (see Note B) TC271 (22 pin) NOTES: A. Single dimensions are nominal. B. The center of the package and the center of the image area are not coincident. C. The distance from the top of the glass to the image-sensor surface is typically 1,46 mm (0.057 in). The glass is 0,95 ±0,08 mm and has an index of refraction of 1.53. D. Each pin centerline is located within 0,25 mm (0.010 in) of its true longitudinal position.

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