TC254P TI | Alldatasheet

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336- × 244-PIXEL CCD IMAGE SENSOR SOCS060B – JUNE 1997 – REVISED JULY 1998 Copyright  1998, Texas Instruments Incorporated 1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

  • Medium-Resolution, Solid-State Image Sensor for Low-Cost Color TV Applications
  • 324(H) x 243(V) Active Elements in Image Sensing Area
  • 10-µm Square Pixels
  • Small Size
  • Low Cost
  • Fast Clear Capability
  • Electronic Shutter Function From 1/60–1/50000 s
  • Low Dark Current
  • Electron-Hole Recombination Antiblooming
  • Dynamic Rang e...6 6 d B Typical
  • High Sensitivity
  • High Blue Response
  • 8-Pin Dual-In-Line Plastic Package
  • 4-mm Image-Area Diagonal
  • Solid-State Reliability With No Image Burn-In, Residual Imaging, Image Distortion, Image Lag, or Microphonics

description

The TC254P is a frame-transfer charge-coupled device (CCD) designed for use in color NTSC TV and special- purpose applications requiring low cost and small size. The image-sensing area of the TC254P is configured in 243 lines with 336 elements in each line. Twelve elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated by supplying clocking pulses to the antiblooming gate, which is an integral part of each image-sensing element. The sensor can be operated in a non-interlace mode as a 324(H) by 243(V) square color pixel mode by alternately averaging two red pixels for red pixels and two blue pixels for blue pixels. Because the human eye is most sensitive to the green light wavelength, the 324× 243 resolution is preserved due to the orientation of the green pixels in the Bayer mosaic color filter pattern. The device can also be operated in a 162(H) by 121(V) square color pixel mode by utilizing a separate red, two averaged greens, and a blue pixel for each color pixel. In this mode, true interlaced video is possible, effectively increasing the vertical resolution, by performing a one pixel shift during the off-chip video processing. One important aspect of this image sensor is its high-speed image-transfer capability. This capability allows for an electronic shutter function comparable to interline-transfer and frame-interline-transfer sensors without the loss of sensitivity and resolution inherent in those technologies. This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments. DUAL-IN-LINE PACKAGE (TOP VIEW) IAG2 ADB SUB OUT ABG IAG1 SAG SRG PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

336- × 244-PIXEL CCD IMAGE SENSOR SOCS060B – JUNE 1997 – REVISED JULY 1998

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description (continued) Charge is converted to signal voltage with a 12-µV per electron conversion factor by a high-performance charge-detection structure with built-in automatic reset and a voltage reference generator. The signal is buffered by a low-noise two-stage source-follower amplifier to provide high output-drive capability. The TC254P is built using TI-proprietary virtual-phase technology, which provides devices with high blue response, low dark current, high photoresponse uniformity, and single-phase clocking. The TC254P is characterized for operation from –10°C to 45°C. functional block diagram Amplifier OUT ADB IAG2 SAG6 IAG1 ABG Storage Area Blooming Protection Image Area With Dark Reference Elements SUB

2 Dummy

ÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉ Clearing Drain

336- × 244-PIXEL CCD IMAGE SENSOR SOCS060B – JUNE 1997 – REVISED JULY 1998 3POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 sensor topology diagram R G R G R G R G G B G B G B G B R G R G R G R G G B G B G B G B R G R G R G R G G B G B G B G B R G R G R G R G G B G B G B G B 12 OB 123456 3 2 3 3 2 4 Line 243 Line 242 Line 241 Line 240 Line 4 Line 3 Line 2 Line 1

1 Dark Line

12 OB R G

OB = Optical Black R = Red B = Blue G = Green 1Clear Line

243 Lines

244 Lines

336 Pixels

NAME NO. I/O DESCRIPTION ABG 8 I Antiblooming gate ADB 2 I Supply voltage for amplifier-drain bias SUB 3 Substrate IAG1 7 I Image-area gate 1 IAG2 1 I Image-area gate 2 OUT 4 O Output SAG 6 I Storage-area gate SRG 5 I Serial-register gate

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(3) the storage area, (4) the serial register, and (5) the charge-detection node and output amplifier. Figure 1. Charge-Accumulation Process Figure 2. Charge-Transfer Process clocking the storage-area gate. The charge in the image area is then cleared through the image-clear line.

area to the serial register.

244 Clocks

244 Cycles

339 Cycles

Figure 3. Timing Diagram

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Figure 4. Buffer Amplifier and Charge-Detection Node

  • Amplitude of the nonuniform pixel
  • Polarity of the nonuniform pixel – Black – White
  • Column amplitude The CCD sensor is characterized in both an illuminated condition and a dark condition. In the dark condition, the nonuniformity is specified in terms of absolute amplitude, as shown in Figure 5. In the illuminated condition, the nonuniformity is specified as a percentage of the total illumination, as shown in Figure 6. The specification for the TC254P is as follows: WHITE SPOT (DARK) WHITE SPOT (ILLUMINATED) COLUMN (DARK) COLUMN (ILLUMINATED) BLACK SPOT (ILLUMINATED) WHITE/BLACK † PAIR x < 15 mV x < 15% x < 0.5 mV x < 1 mV x < 15% x < 9mV † A white/black pair nonuniformity will be no more than 2 pixels even for integration times of 1/60 second. The conditions under which this specification is defined are as follows:
  • The integration time is 1/60 second except for illuminated white spots, illuminated black spots, and white/black pair nonuniformities; in these three cases, the integration time is 1/120 second.
  • The temperature is 45°C.
  • The CCD video-output signal is 60 mV ± 10 mV. mV Amplitude t Illumination % of Total t

Figure 5. Pixel Nonuniformity, Figure 6. Pixel Nonuniformity,

336- × 244-PIXEL CCD IMAGE SENSOR SOCS060B – JUNE 1997 – REVISED JULY 1998

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absolute maximum ratings over operating free-air temperature (unless otherwise noted)† † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltages are with respect to the substrate terminal. recommended operating conditions MIN NOM MAX UNIT Supply voltage, VCC ADB 11 12 13 V Substrate bias voltage 0 V IAG1 IAG2 High level 1.5 2 2.5 IAG1, IAG2 Low level –10.5 –10 –9.5 SAG High level 1.5 2 2.5 SAG Low level –10.5 –10 –9.5 Input voltage, VI SRG High level 1.5 2 2.5 V SRG Low level –10.5 –10 –9.5 High level 3.5 4 4.5 ABG Intermediate level‡ –2.5 Low level –8 –7 –6 ABG 6.25 12.5 Clock frequency flk IAG1, IAG2 25 MHzClock frequency, fclock SAG 12.5 MH z SRG 6.25 12.5 Load capacitance OUT 6 pF Plastic package thermal conductivity 0.008 J/cm•s•°C Operating free-air temperature, TA –10 45 °C ‡ Adjustment is required for optimum performance.

336- × 244-PIXEL CCD IMAGE SENSOR SOCS060B – JUNE 1997 – REVISED JULY 1998 9POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics over recommended operating ranges of supply voltage and free-air temperature (unless otherwise noted) PARAMETER MIN TYP MAX UNIT Dynamic range (see Note 2) Antiblooming disabled (see Note 3) 66 dB Charge-conversion factor 11 12 13 µV/e Charge-transfer efficiency (see Note 4) 0.9999 1 Signal-response delay time, τ (see Note 5) 20 ns Gamma (see Note 6) 0.97 0.98 0.99 Output resistance 350 Ω Noise-equivalent signal without correlated double sampling 62 electrons Noise-equivalent signal with correlated double sampling (see Note 7) 31 electrons ADB (see Note 8) 13 15 18 Rejection ratio SRG (see Note 9) 50 dB ABG (see Note 10) 40 Supply current 5 10 mA IAG1, IAG2 1000 Input capacitance Ci SRG 22 pFInput capacitance, C i ABG 850 pF SAG 2000 NOTES: 2. Dynamic range is –20 times the logarithm of the mean-noise signal divided by saturation-output signal. 3. For this test, the antiblooming gate must be biased at the intermediate level. 4. Charge-transfer efficiency is one minus the charge loss per transfer in the output register. The test is performed in the dark using an electrical-input signal. 5. Signal-response delay time is the time between the falling edge of the SRG pulse and the output-signal valid state. 6. Gamma ( γ) is the value of the exponent in the equation below for two points on the linear portion of the transfer-function curve (this value represents points near saturation). /C0466Exposure (2) Exposure (1)/C0467 /C0103 /C0043/C0466Output signal (2) Output signal (1)/C0467 7. A three-level serial-gate clock is necessary to implement correlated double sampling. 8. ADB rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ADB. See Figure 7 for measured ADB rejection ratio as a function of frequency. 9. SRG rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at SRG. 10. ABG rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ABG.

336- × 244-PIXEL CCD IMAGE SENSOR SOCS060B – JUNE 1997 – REVISED JULY 1998

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optical characteristics, TA = 40°C (unless otherwise noted) PARAMETER MIN TYP MAX UNIT Red with CM500 IR filter 9.5 Sensitivity† Green with CM500 IR filter 10 mV/lux Blue with CM500 IR filter 7 Saturation signal, Vsat (see Note 11) Antiblooming disabled, Interlace off 600 750 mV Maximum usable signal, Vuse Antiblooming enabled 200 250 mV Blooming-overload ratio (see Note 12) 100 200 Image-area well capacity 43000 62500 electrons Smear (see Notes 13 and 14) 0.00012 Dark current Interlace disabled, TA = 21°C 0.20 nA/cm2 Dark signal 200 µV Pixel uniformity Output signal = 60 mV ± 10 mV 15 mV Column uniformity Output signal = 60 mV ± 10 mV 0.5 mV Shading 15 % Electronic-shutter capability 1/15000 1/60 s † Standard illuminates 2856K NOTES: 11. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal. 12. Blooming is the condition in which charge is induced in an element by light incident on another element. Blooming-overload ratio is the ratio of blooming exposure to saturation exposure. 13. Smear is a measure of the error introduced by transferring charge through an illuminated pixel in shutterless operation. It is equivalent to the ratio of the single-pixel transfer time to the exposure time using an illuminated section that is 1/10 of the image area vertical height with recommended clock frequencies. 14. The exposure time is 16.67 ms, the fast-dump clocking rate during vertical transfer is 12.5 MHz, and the illuminated section is 1/10 of the height of the image section. timing requirements MIN NOM MAX UNIT ABG 10 40 IAG1, IAG2 (fast clear) 10 10 tr Rise time IAG1, IAG2 (image transfer) 10 20 ns SAG 10 20 SRG 10 40 ABG 10 40 IAG1, IAG2 (fast clear) 10 10 tf Fall time IAG1, IAG2 (image transfer) 10 20 ns SAG 10 20 SRG 10 40

the light sensitivity of the camera is increased; however, this sacrifices the signal/noise ratio of the camera. Figure 7. Typical Vsat, Vuse Relationship

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Figure 8. SRG and CCD Output Waveforms

336- × 244-PIXEL CCD IMAGE SENSOR SOCS060B – JUNE 1997 – REVISED JULY 1998 13POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TYPICAL CHARACTERISTICS 300 340 380 420 460 500 540 Responsivity – V/W/m Wavelength – nm TC254 SPECTRAL RESPONSE WITH CM500 TOPPAN DYE COLOR FILTER 580 620 700 740 660 ∧ 2 Blue Green Red

336- × 244-PIXEL CCD IMAGE SENSOR SOCS060B – JUNE 1997 – REVISED JULY 1998

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APPLICATION INFORMATION

VIA, VSM , VS 12 V DC VOLTAGES TMC57750 4443424140393837363534 56789101112131415 45 46 47 48 4321 WSEL2 ED DSSEL PHSEL1FI TEST1 S/H SHTCOM EU TEST4 CBLK CSYNC GND CPOB1 CPOB2 SSEL1 VCC SSEL2 SSEL3 VR HR WSEL1 CC MINSEL EFSEL3 EFSEL2 EFSEL1 MON4 MON3 MON2 MON1 GND TEST3 TEST2 FSSEL ABGSEL ABG ABM VCC IAG1 IAG2 SAG GND SRG SRM DLSEL PHSEL2 CDS GND MCLK/4 MCLK/2 XSEL XOUT XIN CLKIN SCAN PUC HD VD

32 VACT

33 SHTMON

V WINDOW VCC WIN VCC CPOB1 CSYNC CBLK EU ED VCC S/H CDS VCC OUT 5 V GND VCC

25 MHz

VABM 7.5 V VCC To Video Processing VAB VABL 14 V 3 V VABL (see Note B) Figure 9. Typical Application Circuit Diagram NOTES: A. Decoupling capacitors are not shown. B. TI recommends designing AC coupled systems.

336- × 244-PIXEL CCD IMAGE SENSOR SOCS060B – JUNE 1997 – REVISED JULY 1998 15POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 MECHANICAL DATA The package for the TC254P consists of a plastic base, a glass window, and an 8-lead frame. The glass window is sealed to the package by an epoxy adhesive. The package leads are configured in a dual in-line organization and fit into mounting holes with 2,54 mm (0.1 in) center-to-center spacings. ÎÎ ÎÎ ÎÎ ÎÎ ÎÎ ÎÎ ÎÎ Î Î Î Î Î Package Center 10,05 9,95 9,00 8,90 10,05 9,95 9,00 8,90 4,20 3,93 0,64 1,273,50 2,54 0,46 0,30 0,50 0,80 0,70 2,67 2,53 0,27 0,23 10,16 ÎÎÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎ Chip Surface 1,10 1,20 1,50 1,40 Optical Center ALL LINEAR DIMENSIONS ARE IN MILLIMETERS Package Center 5,19 4,93

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