TC245 TI | Alldatasheet

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786- × 488-PIXEL CCD IMAGE SENSOR SOCS019A – DECEMBER 1991 Copyright  1991, Texas Instruments Incorporated 2-1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

  • High-Resolution, Solid-State Image Sensor for NTSC B/W TV Applications
  • 8-mm Image-Area Diagonal, Compatible With 1/2” Vidicon Optics
  • 755 (H) x 242 (V) Active Elements in Image-Sensing Area
  • Advanced On-Chip Signal Processing
  • Low Dark Current
  • Electron-Hole Recombination Antiblooming
  • Dynamic Range . . . More Than 70 dB
  • High Sensitivity
  • High Photoresponse Uniformity
  • High Blue Response
  • Single-Phase Clocking
  • Solid-State Reliability With No Image Burn-in, Residual Imaging, Image Distortion, Image Lag, or Microphonics

description

The TC245 is a frame-transfer charge-coupled device (CCD) image sensor designed for use in single-chip B/W NTSC TV applications. The device is intended to replace a 1/2-inch vidicon tube in applications requiring small size, high reliability, and low cost. The image-sensing area of the TC245 is configured into 242 lines with 786 elements in each line. Twenty-nine elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated by supplying clocking pulses to the antiblooming gate, which is an integral part of each image-sensing element. The sensor is designed to operate in an interlace mode, electronically displacing the image-sensing elements in alternate fields by one-half of a vertical line during the charge integration period, effectively increasing the vertical resolution and minimizing aliasing. The device can also be operated as a 755 (H) by 242 (V) noninterlaced sensor with significant reduction in the dark signal. A gated floating-diffusion detection structure with an automatic reset and voltage reference incorporated on-chip converts charge to signal voltage. The signal is further processed by a low-noise, state-of-the-art correlated clamp-sample-and-hold circuit. A low-noise, two-stage, source-follower amplifier buffers the output and provides high output-drive capability. The image is read out through three outputs, each of which reads out every third image column. The TC245 is built using TI-proprietary virtual-phase technology, which provides devices with high blue response, low dark signal, good uniformity, and single-phase clocking. The TC245 is characterized for operation from –10°C to 45°C. This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments. SUB 1 IAG 2 ABG 3 ADB 4 OUT3 5 OUT2 6 OUT1 7 AMP GND 8 CDB 9 SUB 10

20 SUB

19 IAG

18 ABG

17 SAG

16 SRG3

15 SRG2

14 SRG1

12 TRG

11 IDB

(TOP VIEW) NC – No internal connection PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

786- × 488-PIXEL CCD IMAGE SENSOR SOCS019A – DECEMBER 1991 2-2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 functional block diagram Dark Reference Elements Clearing Drain Amplifiers OUT2 OUT3 ADB ABG IAG OUT1 AMP GND CDB SRG3 SRG2 SRG1 TRG IDB SAG17 ABG IAG Storage Area Blooming Protection Image Area With Top Drain

11 Dummy

Gates, and Serial Registers Multiplexer, Transfer detailed description The TC245 consists of four basic functional blocks: (1) the image-sensing area, (2) the image-storage area, (3) the multiplexer block with serial registers and transfer gates, and (4) the low-noise signal-processing amplifier block with charge-detection nodes. The location of each of these blocks is identified in the functional block diagram.

786- × 488-PIXEL CCD IMAGE SENSOR SOCS019A – DECEMBER 1991 2-3POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 sensor topology diagram ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ 244 755 + 1/2 + 1/2 Effective Imaging Area 1 29 + 1/2

2 Lines

Reverse Transfer Reverse Transfer 252 252 251 + 1/2 + 1/2 9.5 11.5 Dummy Pixels OPB Terminal Functions PIN I/O DESCRIPTIONNAME NO. I/O DESCRIPTION ABG † 3 I Antiblooming gate ABG † 18 I Antiblooming gate ADB 4 I Supply voltage for amplifier drain bias AMP GND 8 Amplifier ground CDB 9 I Supply voltage for clearing drain bias IAG† 2 I Image-area gate IAG† 19 I Image-area gate IDB 11 I Supply voltage for input diode bias OUT1 7 O Output signal 1 OUT2 6 O Output signal 2 OUT3 5 O Output signal 3 SAG 17 I Storage-area gate SRG1 14 I Serial-register gate 1 SRG2 15 I Serial-register gate 2 SRG3 16 I Serial-register gate 3 SUB † 1 Substrate and clock return SUB † 10 Substrate and clock return SUB † 20 Substrate and clock return TRG 12 I Transfer gate † All pins of the same name should be connected together externally.

Figure 5. Timing Diagram

Figure 6. Correlated Clamp-Sample-and-Hold Amplifier Circuit Diagram

  • Amplitude of the nonuniform pixel
  • Polarity of the nonuniform pixel – Black – White
  • Location of the nonuniformity (see Figure 7) – Area A – Element columns near horizontal center of the area – Element rows near vertical center of the area – Area B – Up to the pixel or line border – Up to area A – Other – Edge of the imager – Up to area B
  • Nonuniform pixel count
  • Distance between nonuniform pixels
  • Column amplitude The CCD sensors are characterized in both an illuminated condition and a dark condition. In the dark condition, the nonuniformity is specified in terms of absolute amplitude as shown in Figure 8. In the illuminated condition, the nonuniformity is specified as a percentage of the total illumination as shown in Figure 9. BA

20 Pixels

18 Pixels

Figure 7. Sensor Area Map

Figure 8. Pixel Nonuniformity, Figure 9. Pixel Nonuniformity, pixels in the illuminated condition. The sum of all nonuniform combinations will not exceed the total count.

786- × 488-PIXEL CCD IMAGE SENSOR SOCS019A – DECEMBER 1991 2-10 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltage values are with respect to the substrate terminal. recommended operating conditions MIN NOM MAX UNIT Supply voltage, ADB 11 12 13 V Substrate bias voltage 0 V IAG High level 1.5 2 2.5 IAG Intermediate level§ –5.7 Low level –1 1 –9 SRG1 SRG2 SRG3 High level 1.5 2 2.5 SRG1 , SRG2 , SRG3 Low level –11 –9 VInput voltage VI‡ ABG High level 2 4 6 VInput voltage, VI‡ ABG Intermediate level§ –2.3 V Low level –7.5 –7 –6.5 SAG High level 1.5 2 2.5 SAG Low level –1 1 –9 TRG High level 1.5 2 2.5 TRG Low level –1 1 –9 Cl k f f IAG, SAG 3.58 MHClock frequency, fclock SRG1, SRG2, SRG3, TRG 4.77 MHzqy clock ABG 2 Capacitive load OUT1, OUT2, OUT3 6 pF Operating free-air temperature, TA –10 45 °C ‡ The algebraic convention, in which the least-positive (most negative) value is designated minimum, is used in this data sheet for clock voltage levels. § Adjustment is required for optimal performance.

786- × 488-PIXEL CCD IMAGE SENSOR SOCS019A – DECEMBER 1991 2-11POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics over recommended operating range of supply voltage, TA = –10°C to 45°C PARAMETER MIN TYP † MAX UNIT Dynamic range (see Note 2) Antiblooming disabled (see Note 3) 60 70 dB Charge conversion factor 3.8 4 4.2 µV/e Charge transfer efficiency (see Note 4) 0.99990 0.99995 1 Signal response delay time, τ (see Note 5 and Figure 13) 18 20 22 ns Gamma (see Note 6) 0.97 0.98 0.99 Output resistance 700 800 Ω Noise voltage 1/f noise (5 kHz) 0.1 µV/√HzN oise voltage Random noise (f = 100 kHz) 0.08 µV/√Hz Noise equivalent signal 30 electrons ADB (see Note 7) 20 Rejection ratio at 4.77 MHz SRG1, SRG2, SRG3 (see Note 8) 40 dB ABG (see Note 9) 20 Supply current 5 mA IAG 6500 SRG1, SRG2, SRG3 68 Input capacitance, Ci ABG 2400 pF TRG 180 SAG 6800 † All typical values are at TA = 25 °C NOTES: 2. Dynamic range is –20 times the logarithm of the mean noise signal divided by the saturation output signal. 3. For this test, the antiblooming gate must be biased at the intermediate level. 4. Charge transfer efficiency is one minus the charge loss per transfer in the output register. The test is performed in the dark using an electrical input signal. 5. Signal-response delay time is the time between the falling edge of the SRG clock pulse and the output signal valid state. 6. Gamma ( γ) is the value of the exponent in the equation below for two points on the linear portion of the transfer function curve (this value represents points near saturation): /C0466Exposure (2) Exposure (1)/C0467 /C0103 /C0043/C0466Output signal (2) Output signal (1)/C0467 7. ADB rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ADB. 8. SRGn rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at SRGn. 9. ABG rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ABG.

786- × 488-PIXEL CCD IMAGE SENSOR SOCS019A – DECEMBER 1991 2-12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 optical characteristics, TA = 40°C , integration time = 16.67 ms (unless otherwise noted) PARAMETER MIN TYP MAX UNIT Sensitivity No IR Filter Measured at VU 197 mV/lxSensitivity With IR Filter Measured at VU (see Notes 10 and 11) 24 m V/lx Saturation signal, Vsat (see Note 12)Antiblooming disabled, interlace off 320 mV Maximum usable signal, Vuse Antiblooming enabled, interlace on 180 mV Blooming overload ratio (see Note 13) Interlace on 100 Bloom ing overload ratio (see N ote 13) Interlace off 200 Image-area well capacity 80 x 103 electrons Smear (see Note 14) See Note 15 0.0004 Dark current Interlace off TA = 21°C 0.027 nA/cm2 Dark signal (see Note 16) TA =4 5°C TC245-30 5.5 mVD ark signal (see N ote 16) TA = 45°C TC245-40 6 m V Pixel uniformity Output signal = 50 mV±10 mV TC245-30 3.5 mVPixel uniformity O utput signal = 50 mV ±10 mV TC245-40 5 m V Column uniformity Output signal = 50 mV±10 mV TC245-30 0.5 mVC olumn uniformity O utput signal = 50 mV ±10 mV TC245-40 0.7 m V Shading Output signal = 100 mV 15% NOTES: 10. Sensitivity is measured at an integration time of 16.67 ms with a source temperature of 2856 K. A CM-500 filter is used. 11. VU is the output voltage that represents the threshold of operation of antiblooming. VU ≈ 1/2 saturation signal. 12. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal. 13. Blooming overload ratio is the ratio of blooming exposure to saturation exposure. 14. Smear is a measure of the error induced by transferring charge through an illuminated pixel in shutterless operation. It is equivalent to the ratio of the single-pixel transfer time during a fast dump to the exposure time using an illuminated section that is 1/10 of the image- area vertical height with recommended clock frequencies. 15. Exposure time is 16.67 ms, the fast-dump clocking rate during vertical timing is 3.58 MHz, and the illuminated section is 1/10 of the height of the image section. 16. Dark-signal level is measured from the dummy pixels.

NOTES: A. V use (typ) is defined as the voltage determined to equal the camera white clip. This voltage must be less than Vuse (max). the light sensitivity of the camera is increased; however, this sacrifices the signal/noise ratio of the camera. Figure 10. Typical Vsat, Vuse Relationship

786- × 488-PIXEL CCD IMAGE SENSOR SOCS019A – DECEMBER 1991 2-15POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TYPICAL CHARACTERISTICS 0.01 0.001 0.1 700 800 900 Responsivity – A/W Incident Wavelength – nm CCD SPECTRAL RESPONSIVITY 400 500 600 1000 1100 VADB = 12 V, TA = 25°C No IR Filter Light Power = 1.5 µW/cm 2 Light Box: Canon SA702 Quantum Efficiency – % 100 300 Figure 14

786- × 488-PIXEL CCD IMAGE SENSOR SOCS019A – DECEMBER 1991 2-16 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

APPLICATION INFORMATION

4.7 µF 15 pF Oscillator 14.3-MHz 20 pF 4443424140393837363534 V CC 1213141516171819202122

10 OUT1

11 OUT2

12 OUT3

V ABG – ABLVL V Parallel Driver IALVL VSS 22 kΩ 47 kΩ 4.7 µF 4.7 µF 4.7 µF 100 Ω 100 Ω 100 Ω ADB VCC VSS V ABLVL IALVL VABG + VABG – 12 V 5 V – 10 V 2 V – 2.5 V –5 V 4 V –6 V DC VOLTAGES IALVL I/N IAIN ABIN MIDSEL SAIN PD GND VABG+ IASR ABSR VCC ABLVL IAOUT ABOUT SAOUT VCC VABG– VSS VSS SEL0OUT GND PD SRG3IN SRG2IN SRG1IN TRGIN NC SEL1OUT SEL0 NC VCC SRG3OUT SRG2OUT SRG1OUT TRGOUT VCC SEL1VSS VSS VABG+ Serial Driver SUB IAG ABG SAG SRG3 SRG2 SEG1 NC TRG IDB SUB IAG ABG ADB OUT3 OUT2 OUT1 AMP GND CDB SUB ANLG V CC AIN1 CIN1 AIN2 CIN2 AIN3 CIN3 ANLG GND TL1593 S/H1 S/H2 S/H3 DIG VCC OUT1 OUT2 OUT3 DGTL GND VCC ABS1 ABS0 SC(90) SC BF CBLK CSYNC CP1 CP2 BCP2 BCP1 T PD PS GT ABIN PI MODE GND VCC VCC HIGH GPS SB GP VD VD2 WHTA VGATE HGATE CLK2M VCC FI E/L VDS HCR VCR GT2 GT1/SH3 GT3/SH2 SH1 SN28835 NTSC Timer TMS3473B SN28846 Image Sensor Sample-and-Hold SUPPORT CIRCUITS DEVICE PACKAGE APPLICATION FUNCTION SN28835FS 44 pin flatpack Timing generator NTSC timing generator (CCD, S/H, processing) SN28846DW 20 pin small outline Serial driver Driver for TRG, SRG1, SRG2, SRG3 TMS3473BDW 20 pin small outline Parallel driver Driver for IAG, SAG, ABG TL1593CNS 16 pin small outline (EIAJ) Sample and hold Three-channel sample-and-hold IC Figure 15. Typical Application Circuit Diagram

786- × 488-PIXEL CCD IMAGE SENSOR SOCS019A – DECEMBER 1991 2-17POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 MECHANICAL DATA The package for the TC245 consists of a ceramic base, a glass window, and a 20-lead frame. The glass window is sealed to the package by an epoxy adhesive. The package leads are configured in a dual in-line organization and fit into mounting holes with 1,78 mm (0.070 in) center-to-center spacings. 0,33 (0.013) 0,17 (0.007) 1,65 (0.065) 1,91 (0.075) 0,41 (0.016) 0,51 (0.020) 3,90 (0.154) 5,50 (0.217) 0,76 (0.030) 1,78 (0.070) Rotation ± 90° 7,20 (0.283) 7,60 (0.299) Center Package Center Optical 15,44 (0.608) 15,64 (0.616)MAX 18,30 (0.720) 13,87 (0.546) 13,67 (0.538) 4,01 (0.158) MAX 15,54 (0.612) 14,94 (0.588) 1,70 (0.067) 1,10 (0.043) Focus Plane 6,50 (0.256) 6,10 (0.240) ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES TC245 (20 pin) Index Mark 15,14 (0.596) 14,84(0.584) 3,38(0.133) 2,72 (0.107) NOTES: A. The center of the package and the center of image area not coincident. and has an index of refraction of 1.53. C. Each pin centerline is located within 0.18 mm of its true longitudinal position. D. Maximum rotation of the sensor within the package is 1.5°.

SOCS019A – DECEMBER 1991 2-18 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

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