TC210 TI | Alldatasheet
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Technical content
192- × 165-PIXEL CCD IMAGE SENSOR SOCS009B – OCTOBER 1986 – REVISED MAY 1990 Copyright 1990, Texas Instruments Incorporated 2-3POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
- Full-Frame Operation
- Antiblooming Capability
- Single-Phase Clocking for Horizontal and Vertical Transfers
- Fast Clear Capability
- Dynamic Rang e...6 0 d B Typical
- High Blue Response
- High Photoresponse Uniformity
- Solid-State Reliability With No Image Burn-In, Residual Imaging, Image Distortion, Image Lag, or Microphonics
- 6-Pin Dual-In-Line Ceramic Package
- Square Image Area: – 2640 µm by 2640 µm – 192 Pixels (H) by 165 Pixels (V) – Each Pixel 13.75 µm (H) by 16 µm (V)
description
The TC210 is a full-frame charge-coupled device (CCD) image sensor designed specifically for medical and industrial applications requiring ruggedness and small size. The image-sensing area is configured into 165 horizontal lines each containing 192 pixels. Twelve additional pixels are provided at the end of each line to establish a dark reference and line clamp. The antiblooming feature is activated by supplying clock pulses to the antiblooming gate, an integral part of each image-sensing element. The charge is converted to signal voltage at 4 µV per electron by a high-performance structure with built-in automatic reset and a voltage-reference generator. The signal is further buffered by a low-noise two-stage source-follower amplifier to provide high output-drive capability. The TC210 is supplied in a 5-mm (0.20-in) diameter ceramic and clear plastic molded package with a glass window. The glass window can be cleaned using any standard method for cleaning optical assemblies or by wiping the surface with a cotton swab soaked in alcohol. The TC210 is characterized for operation from –10°C to 45°C. This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to VSS . Under no circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUT to VSS during operation to prevent damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments. ADB 3 VSS 2 ABG 1
4 OUT
5 SRG
6 IAG
ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ DUAL-IN-LINE PACKAGE (TOP VIEW) PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
192- × 165-PIXEL CCD IMAGE SENSOR SOCS009B – OCTOBER 1986 – REVISED MAY 1990 2-4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 functional block diagram ÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇ
192 Image Pixels
12 Dark Pixels
6 Dummy Pixels
NAME NO. I/O DESCRIPTION ABG 1 I Antiblooming gate VSS 2 Amplifier ground ADB 3 I Supply voltage for amplifier drain bias OUT 4 O Output signal SRG 5 I Serial-register gate IAG 6 I Image-area gate functional description The image-sensing area consists of 165 horizontal image lines each containing 192 photosensitive elements (pixels). Each pixel is 13.75 µm (horizontal) by 16.00 µm (vertical). As light enters the silicon in the image-sensing area, free electrons are generated and collected in potential wells (see Figure 1). During this time, the antiblooming gate is activated by applying a burst of pulses. This prevents blooming caused by the spilling of charge from overexposed elements into neighboring elements. The antiblooming gate is typically held at a midlevel voltage during readout. The quantity of charge collected in each pixel is a linear function of the incident light and the exposure time. After exposure and under dark conditions, the charge packets are transferred from the image-area to the serial register at the rate of one image line per each clock pulse applied to the image-area gate. Once an image line has been transferred into the serial register, the serial-register gate can be clocked until all of the charge packets are moved out of the serial register to the charge detection node at the amplifier input. There are 12 dark pixels to the right of the 192 image pixels on each image line. These dark pixels are shielded from incident light and the signal derived from them can be used to generate a dark reference for restoration of the video black level on the next image line.
conditions without clocking the serial-register gate.
1 Pixel
Figure 1. Charge Accumulation and Transfer Process
165 Cycles
210 Cycles
Figure 2. Timing Diagram, Noninterlace Mode implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltage values are with respect to VSS .
192- × 165-PIXEL CCD IMAGE SENSOR SOCS009B – OCTOBER 1986 – REVISED MAY 1990 2-7POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 recommended operating conditions MIN NOM MAX UNIT Supply voltage at ADB 11 12 13 V Substrate bias voltage 0 V High level 1.5 2 2.5 IAG Intermediate level‡ –10 –5 2 Low level –11 –10 –9 Input voltage VI† SRG High level 1.5 2 2.5 VInput voltage, VI† SRG Low level –11 –10 –9 V High level 4 4.5 5 ABG Intermediate level‡ –3 –2.5 –2 Low level –7.5 –7 –6.5 IAG 1.5 Clock frequency, fclock SRG 10 MHz ABG 2 t1 Time interval, SRG↓ to IAG↑ 70 ns t2 Time interval, IAG↑ to SRG transfer pulse ↑ (see Note 2) 0 ns tw1 Pulse duration, IAG high 350 ns tw2 Pulse duration, SRG transfer pulse high 350 ns t3 Time interval, IAG↓ to SRG transfer pulse ↓ 350 ns t4 Time interval, SRG transfer pulse ↓ to SRG clock pulse ↑ 70 ns Capacitive load OUT 12 pF Operating free-air temperature, TA –10 45 °C † The algebraic convention, in which the least-positive (most negative) value is designated minimum, is used in this data sheet for clock voltage levels. ‡ Adjustment is required for optimal performance. NOTE 2: If t2 = 0, then t3 must be 700 ns minimum.
192- × 165-PIXEL CCD IMAGE SENSOR SOCS009B – OCTOBER 1986 – REVISED MAY 1990 2-8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics over recommended operating range of supply voltage, TA = –10°C to 45°C PARAMETER MIN TYP † MAX UNIT Dynamic range (see Note 3) Antiblooming disabled (see Note 4) 60 dBDynamic range (see Note 3) Antiblooming enabled 57 dB Charge conversion factor 4.0 µV/e Charge transfer efficiency (see Note 5) 0.99990 0.99998 Signal response delay time, τ (see Note 6 and Figure 5) 25 ns Gamma (see Note 7) 0.97 0.98 0.99 Output resistance 700 800 Ω Noise voltage 1/f noise (5 kHz) 370 nV/√HzNoise voltage Random noise, f = 100 kHz 70 nV/√Hz Noise equivalent signal 150 electrons Rejection ratio at 7 16 MHz From ADB to OUT (see Note 8) 19 dBRejection ratio at 7.16 MHz From SRG to OUT (see Note 9) 37 dB Supply current 5 10 mA IAG 1600 Input capacitance, Ci SRG 25 pF ABG 780 † All typical values are at TA = 25°C NOTES: 3. Dynamic range is –20 times the logarithm of the mean noise signal divided by the saturation output signal. 4. For this test, the antiblooming gate must be biased at the intermediate level. 5. Charge transfer efficiency is one minus the charge loss per transfer in the output register. The test is performed in the dark using an electrical input signal. 6. Signal response delay time is the time between the falling edge of the SRG clock pulse and the output signal valid state. 7. Gamma ( γ) is the value of the exponent in the equation below for two points on the linear portion of the transfer function curve (this value represents points near saturation): /C0466Exposure (2) Exposure (1)/C0467 /C0103 /C0043/C0466Output signal (2) Output signal (1)/C0467 8. ADB rejection ratio is –20 times the logarithm of the ac amplitude at the OUT divided by the ac amplitude at ADB. 9. SRG rejection ratio is –20 times the logarithm of the ac amplitude at the OUT divided by the ac amplitude at SRG.
NOTES: 10. Sensitivity is measured at an integration time of 16.667 ms and a source temperature of 2856 K. A CM-500 filter is used.
- VU is the output voltage that represents the threshold of operation of antiblooming. VU ≈ 1/2 saturation signal.
- Saturation is the condition in which further increase in exposure does not lead to further increase in output signal.
- Blooming overload ratio is the ratio of blooming exposure to saturation exposure.
- Output signal nonuniformity is the ratio of the maximum pixel-to-pixel difference in output signal to the mean output signal for
exposure adjusted to give 1/2 the saturation output signal.
- Dark-signal level is measured from the dummy pixels.
- Dark-signal nonuniformity is the maximum pixel-to-pixel difference in a dark condition.
Figure 3. Typical Clock Waveform for IAG and ABG
192- × 165-PIXEL CCD IMAGE SENSOR SOCS009B – OCTOBER 1986 – REVISED MAY 1990 2-12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
VABG– TMS3473B SEL0OUT GND PD SRG3IN SRG2IN SRG1IN TRGIN NC SEL1OUT VSS VSS SEL0 NC VCC SRG3OUT SRG2OUT SRG1OUT TRGOUT VCC SEL1 SN28846 IALVL1 VCC ABLVL VABG– VABG+ IAG ABG GT1 S/H SRG S/H CLK CMP CBNK CSYNC TRIG User-Defined Timer VCCGND CKGND Master Oscillator VCC VSS VCC V 47 kΩ 22 kΩ ABG VSS ADB IAG SRG OUTADB ADB VDD ADB EL20202N3904 1 kΩ 500 ADB 2.2 kΩ 5 kΩ ANLG V CC ANLG IN ANLG GND ANLG OUT DGTL V CC DGTL IN DGTL GND SUB GND VCC S/H TL1591 TC210 OUT Parallel Driver Serial Driver Image Sensor Sample-and-Hold ADB VCC VSS V ABLVL IALVL VABG+ VABG– 12 V 5 V –10 V 2 V –2.5 V –5 V 4 V –6 V DC VOLTAGES SUPPORT CIRCUITS DEVICE PACKAGE APPLICATION FUNCTION SN28846DW 20 pin small outline Serial driver Driver for SRG TMS3473BDW 20 pin small outline Parallel driver Driver for IAG, ABG TL1591CPS 8 pin small outline (EIAJ) Sample and hold Single-channel sample-and-hold IC Figure 10. Typical Application Circuit Diagram
192- × 165-PIXEL CCD IMAGE SENSOR SOCS009B – OCTOBER 1986 – REVISED MAY 1990 2-13POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 MECHANICAL DATA The TC210 package consists of a 5-mm (0.20-in) diameter ceramic and clear plastic molded base, glass window, and a 6-lead frame. The glass window is sealed to the package by an epoxy adhesive. The package leads are configured in a dual-in-line organization and fit into mounting holes with 1,27 mm (0.050 inch) center-to-center spacings. ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ 4,93 (0.194) 5,08 (0.200) 2,64 (0.104)AREA ACTIVE 1,90 (0.075) 2,06 (0.081) 0,457 (0.018) 0,610 (0.24) 2,54 (0.100)TYP 1,27 (0.050) 3,30 (0.130) 0,30 (0.012) 2,54 (0.100) 25° 25° CL 3,45 (0.136) 2,64 (0.104) ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES 0,45 (0.018) NOTES: A. Single dimensions are nominal. B. The center of the package and the center of the image area are not coincident. C. The distance from the top of the glass to the image sensor surface is typically 9 mm (0.035 inch). The glass is typically 0.020 inch thick and has an index of refraction of 1.52. D. Pin 2 is index pin.
SOCS009B – OCTOBER 1986 – REVISED MAY 1990 2-14 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
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