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Technical content
Features
- Low Supply Current: 80 µA (Max)
- Low Dropout Voltage: 140 mV (Typ.) @ 150 mA
- High-Output Voltage Accuracy: ±0.4% (Typ.)
- Standard or Custom Output Voltages
- Power-Saving Shutdown Mode
- Reference Bypass Input for Ultra Low-Noise Operation
- Fast Shutdown Response Time: 60 µsec (Typ.)
- Overcurrent and Overtemperature Protection
- Space-Saving 5-Pin SOT-23A Package
- Pin-Compatible Upgrades for Bipolar Regulators
- Wide Operating Temperature Range: -40°C to +125°C
- Standard Output Voltage Options: 3.3V, 5.0V
Applications
- Battery-Operated Systems
- Portable Computers
- Medical Instruments
- Instrumentation
- Cellular/GSM/PHS Phones
- Linear Post-Regulator for SMPS
- Pagers Related Literature
- Application Notes: AN765, AN766, AN776 and AN792 Package Type General Description The TC2014, TC2015 and TC2185 are high-accuracy (typically ±0.4%) CMOS upgrades for bipolar Low Drop-out Regulators (LDO s), such as the LP2980. Total supply current is typically 55 µA; 20 to 60 times lower than in bipolar regulators. The key features of the device include low noise oper- ation (plus bypass reference), low dropout voltage – typically 45 mV for the TC2014, 90 mV for the TC2015, and 140 mV for the TC2185, at full load – and fast response to step changes in load. Supply current is reduced to 0.5 µA (max) and V OUT falls to zero when the shutdown input is low. These devices also incorporate overcurrent and overtemperature protection. The TC2014, TC2015 and TC2185 are stable with an output capacitor of 1 µF and have maximum output currents of 50 mA, 100 mA and 150 mA, respectively. For higher-output current versions, see the TC1107 (DS21356), TC1108 (DS21357) and TC1173 (DS21362) (I OUT = 300 mA) data sheets. Typical Application TC2014 TC2015 TC2185 1 3 Bypass GND V OUT VIN SHDN 5-Pin SOT-23A 0.01 µF Reference Bypass Cap (Optional) Shutdown Control (from Power Control Logic) TC2014 TC2015 TC2185 VIN 5VIN VOUT BypassSHDN GND VOUT 1µ F 1µ F + + 50 mA, 100 mA, 150 mA CMOS LDOs with Shutdown and Reference Bypass
DS21662E-page 2 © 2006 Microchip Technology Inc.
1.0 ELECTRICAL
Absolute Maximum Ratings † IN +0.3V to – 0.3V † Notice: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C. BOLDFACE type specifications apply for junction temperature of -40°C to +125°C. Parameters Sym Min Typ Max Units Conditions Input Operating Voltage V IN 2.7 — 6.0 V Note 1 Maximum Output Current IOUTMAX 50 —— m A TC2014 100 —— TC2015 150 —— TC2185 Output Voltage V OUT VR – 2.0% VR ± 0.4% VR + 2.0% V Note 2 VOUT Temperature Coefficient TCVOUT — 20 — ppm/°C Note 3 — 40 — Line Regulation ΔVOUT/ΔVIN —0 . 0 5 0.5 %( V R + 1V) < VIN < 6V Load Regulation (Note 4) ΔVOUT/VOUT -1.0 0.33 +1.0 % TC2014;TC2015:I L = 0.1 mA to IOUTMAX -2.0 0.43 +2.0 TC2185 :I L = 0.1 mA to IOUTMAX (Note 4) Dropout Voltage V IN – VOUT —2— m V Note 5 IL = 100 µA —4 5 70 IL = 50 mA —9 0 140 TC2015 ; TC2185 IL = 100 mA — 140 210 TC2185 IL = 150 mA Supply Current I IN —5 5 80 µA SHDN = VIH, IL = 0 Shutdown Supply Current IINSD — 0.05 0.5 µA SHDN = 0V Power Supply Rejection Ratio PSRR — 55 — dB F ≤ 1 kHz, Cbypass = 0.01 µF Output Short Circuit Current IOUTSC — 160 300 mA V OUT = 0V Note 1: The minimum VIN has to meet two conditions: VIN = 2.7V and VIN = VR + VDROPOUT. 4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the Thermal Regulation specification. 5: Dropout Voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value. 6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to IMAX at VIN = 6V for T = 10 ms. 7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA). 8: Time required for VOUT to reach 95% of VR (output voltage setting), after VSHDN is switched from 0 to VIN. TCV OUT VOUTMAX VOUTMIN–() 10 6–×
© 2006 Microchip Technology Inc. DS21662E-page 3 TC2014/2015/2185 TEMPERATURE CHARACTERISTICS Thermal Regulation ΔVOUT/ΔPD —0 . 0 4— V / W Note 6, Note 7 Thermal Shutdown Die Temperature TSD — 160 — °C Output Noise eN — 200 — nV/ √Hz I L = IOUTMAX, F = 10 kHz 470 pF from Bypass to GND Response Time (from Shutdown Mode) (Note 8) TR —6 0— µ s V IN = 4V, IL = 30 mA, CIN = 1 µF, COUT = 10 µF SHDN Input SHDN Input High Threshold VIH 60 —— % V IN VIN = 2.5V to 6.0V SHDN Input Low Threshold VIL —— 15 %VIN VIN = 2.5V to 6.0V ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise specified, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C. BOLDFACE type specifications apply for junction temperature of -40°C to +125°C. Parameters Sym Min Typ Max Units Conditions Note 1: The minimum VIN has to meet two conditions: VIN = 2.7V and VIN = VR + VDROPOUT. 4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the Thermal Regulation specification. 5: Dropout Voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value. 6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to IMAX at VIN = 6V for T = 10 ms. 7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA). 8: Time required for VOUT to reach 95% of VR (output voltage setting), after VSHDN is switched from 0 to VIN. TCV OUT VOUTMAX VOUTMIN–() 10 6–× Electrical Specifications: Unless otherwise noted, VDD = +2.7V to +6.0V and VSS = GND. Parameters Sym Min Typ Max Units Conditions Temperature Ranges: Extended Temperature Range T A -40 — +125 °C Operating Temperature Range T A -40 — +125 °C Storage Temperature Range T A -65 — +150 °C Thermal Package Resistances: Thermal Resistance, 5L-SOT-23 θ JA — 255 — °C/W
DS21662E-page 4 © 2006 Microchip Technology Inc.
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C. FIGURE 2-1: Supply Current vs. Junction Temperature. FIGURE 2-2: Load Regulation vs. Supply Voltage. FIGURE 2-3: Output Voltage vs. Junction Temperature. FIGURE 2-4: Output Voltage vs. Junction Temperature. FIGURE 2-5: Output Voltage vs. Supply Voltage. FIGURE 2-6: Dropout Voltage vs. Junction Temperature. Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In so me graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 45.0 48.0 51.0 54.0 57.0 60.0 63.0 -40 -25 -10 110 125 Junction Temperature (°C) IDD (µA) VR = 1.8V COUT = 3.3 µF VIN = 2.8V VIN = 6.0V -0.8 -0.6 -0.4 -0.2 0.2 0.4 0.6 0.8 Supply Voltage (V) Load Regulation (%) VR = 1.8V COUT = 3.3 µF IL = 150 mA TA = +25°C TA = +125°C TA = -45°C 1.790 1.795 1.800 1.805 1.810 -40 -25 -10 110 125 Junction Temperature (°C) Output Voltage (V) VIN = 6.0V VIN = 2.8V VR = 1.8V COUT = 3.3 µF IL = 0.1 mA 1.785 1.790 1.795 1.800 1.805 1.810 1.815 1.820 -40 -25 -10 110 125 Junction Temperature (°C) Output Voltage (V) VR = 1.8V COUT = 3.3 µF IL = 150 mA VIN = 2.8V VIN = 6.0V 1.785 1.79 1.795 1.8 1.805 1.81 1.815 1.82 Supply Voltage (V) Output Voltage (V) VR = 1.8V COUT = 3.3 µF IL = 150 mA TA = +25°C TA = +125°C TA = -45°C 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 -40 -25 -10 110 125 Junction Temperature (°C) Dropout Voltage (V) VR = 1.8V COUT = 3.3 μF IL = 20 mA IL = 50 mA IL = 100 mA IL = 150 mA Note: Dropout Voltage is not a tested parameter for 1.8V. VIN(min) ! 2.7V
© 2006 Microchip Technology Inc. DS21662E-page 9 TC2014/2015/2185
3.0 PIN DESCRIPTIONS
The descriptions of the pins are described in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE
3.1 Unregulated Supply Input (V IN)
Connect the unregulated input supply to the VIN pin. If there is a large distance between the input supply and the LDO regulator, some input capacitance is neces- sary for proper operation. A 1 µF capacitor, connected from V IN to ground, is recommended for most applications.
3.2 Ground Terminal (GND)
Connect the unregulated input supply ground return to GND. Also connect one side of the 1 µF typical input decoupling capacitor close to this pin and one side of the output capacitor C OUT to this pin.
3.3 Shutdown Control Input (SHDN )
The regulator is fully enabled when a logic-high is applied to SHDN . The regulator enters shutdown when a logic-low is applied to this input. During shutdown, the output voltage falls to zero and the supply current is reduced to 0.5 µA (max).
3.4 Reference Bypass Input (Bypass)
Connecting a low-value ce ramic capacitor to Bypass will further reduce output voltage noise and improve the Power Supply Ripple Rejection (PSRR) performance of the LDO. Typical values from 470 pF to 0.01 µF are suggested. While smaller and larger values can be used, these affect the sp eed at which the LDO output voltage rises when input power is applied. The larger the bypass capacitor, the slower the output voltage will rise.
3.5 Regulated Voltage Output (V OUT)
Connect the output load to VOUT of the LDO. Also con- nect one side of the LDO output de-coupling capacitor as close as possible to the V OUT pin. Pin No. Symbol Description 1V IN Unregulated supply input
2 GND Ground terminal
3 SHDN
4 Bypass Reference bypass input
OUT Regulated voltage output
DS21662E-page 10 © 2006 Microchip Technology Inc.
4.0 DETAILED DESCRIPTION
The TC2014, TC2015 and TC2185 are precision fixed- output voltage regulators (if an adjustable version is needed, see the TC1070, TC1071 and TC1187 (DS21353) data sheet). Unlike bipolar regulators, the TC2014, TC2015 and TC2185 supply current does not increase with load current. In addition, the LDO’s out- put voltage is stable using 1 µF of ceramic or tantalum capacitance over the entire specified input voltage range and output current range. Figure 4-1 shows a typical application circuit. The reg- ulator is enabled anytime the shutdown input (SHDN is at or above V IH, and disabled (shutdown) when SHDN is at or below VIL. SHDN may be controlled by a CMOS logic gate or I/O port of a microcontroller. If the SHDN input is not required, it should be connected directly to the input supply. While in shutdown, the supply current decreases to 0.05 µA (typical) and V OUT falls to zero volts. FIGURE 4-1: Typical Application Circuit.
4.1 Bypass Input
A 0.01 µF ceramic capacito r, connected from the Bypass input to ground, reduces noise present on the internal reference, which, in turn, significantly reduces output noise. If output noise is not a concern, this input may be left unconnected. Larger capacitor values may be used, but the result is a longer time period to rated output voltage when power is initially applied.
4.2 Output Capacitor
A 1 µF (min) capacitor from VOUT to ground is required. The output capacitor should have an Effective Series Resistance (ESR) of 0.01Ω to 5Ω for V OUT ≥ 2.5V, and 0.05Ω. to 5Ω for VOUT < 2.5V. Ceramic, tantalum or alu- minum electrolytic capacitors can be used. When using ceramic capacitors, X5R and X7R dielectric material are recommended due to their stable tolerance over temperature. However, other dielectrics can be used as long as the minimum output capacitance is maintained.
4.3 Input Capacitor
A 1 µF capacitor should be connected from VIN to GND if there is more than 10 inches of wire between the reg- ulator and this AC filter capacitor, or if a battery is used as the power source. Aluminum electrolytic or tantalum capacitors can be used (since many aluminum electro- lytic capacitors freeze at approximately -30°C, solid tantalum are recommended for applications operating below -25°C). When operating from sources other than batteries, supply-noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques. 0.01 µF Reference Bypass Cap (Optional) Shutdown Control (from Power Control Logic) TC2014 TC2015 TC2185 VIN 5VOUT BypassSHDN GND VOUT 1µ F 1µ F Battery ++ +
© 2006 Microchip Technology Inc. DS21662E-page 11 TC2014/2015/2185
5.0 THERMAL CONSIDERATIONS
5.1 Thermal Shutdown
Integrated thermal protection circuitry shuts the regula- tor off when the die temperature exceeds approxi- mately 160°C. The regulator remains off until the die temperature cools to approximatley 150°C.
5.2 Power Dissipation
The amount of power the regulator dissipates is prima- rily a function of input voltage, output voltage and output current. The following equation is used to calculate worst-case power dissipation. EQUATION 5-1: The maximum allowable power dissipation (P DMAX) is a function of the maximum ambient temperature (TAMAX), the maximum allowable die temperature (TJMAX) (+125°C) and the thermal resistance from junc- tion-to-air (θJA). The 5-Pin SOT-23A package has a θJA of approximately 220°C /Watt when mounted on a typical two-layer FR4 dielectric copper-clad PC board. EQUATION 5-2: The PD equation can be used in conjunction with the PDMAX equation to ensure that regulator thermal operation is within limits. For example: Actual power dissipation: Maximum allowable power dissipation: In this example, the TC2014 dissipates a maximum of only 26.7 mW; far below the allowable limit of 318 mW. In a similar manner, the P D and PDMAX equations can be used to calculate maximum current and/or input voltage limits.
5.3 Layout Considerations
The primary path of heat conduction out of the package is via the package leads. Therefore, layouts having a ground plane, wide traces at the pads and wide power supply bus lines combine to lower θ JA and, therefore, increase the maximum allowable power dissipation limit. PD V INMAX VOUTMIN–() ILMAX≈ Where: PD = Worst-case actual power dissipation VINMAX = Maximum voltage on V IN VOUTMIN = Minimum regulator output voltage ILMAX = Maximum output (load) current Where all terms are previously defined. PDMAX TJMAX TAMAX– θJA Given: VINMAX = 3.0V +10% VOUTMIN = 2.7V – 2.5% ILOADMAX =4 0 m A TJMAX = +125°C TAMAX = +55°C Find: 1. Actual power dissipation 2. Maximum allowable dissipation PD VINMAX VOUTMIN–() ILMAX= 26.7mW= PDMAX TJMAX TAMAX– θJA 125 55– 318mW=
DS21662E-page 12 © 2006 Microchip Technology Inc.
6.0 PACKAGING INFORMATION
6.1 Package Marking Information
6.2 Taping Form
c&d represents part number code + temperature range and voltage e represents year and 2-month period code f represents lot ID number cdef TABLE 6-1: PART NUMBER CODE AND TEMPERATURE RANGE (V) TC2014 TC2015 TC2185
1.8 PA RA UA
2.5 PB RB UB
2.6 PH RH UH
2.7 PC RC UC
2.8 PD RD UD
2.85 PE RE UE
3.0 PF RF UF
3.3 PG RG UG
5.0 PJ RJ UJ
Carrier Tape, Number of Components Per Reel and Reel Size: Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size 5-Pin SOT-23A 8 mm 4 mm 3000 7 in. Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices Device Marking PIN 1 User Direction of Feed Standard Reel Component Orientation for 713 Suffix Device (Mark Right Side Up) W P
© 2006 Microchip Technology Inc. DS21662E-page 13 TC2014/2015/2185 5-Lead Plastic Small Outline Transistor (OT) (SOT23) p D B n E L c β φ α A2A 10501050bMold Draft Angle Bottom 10501050aMold Draft Angle Top 10501050fFoot Angle 1.90.075p1Outside lead pitch (basic) 0.95.038pPitch 55nNumber of Pins MAXNOMMINMAXNOMMINDimension Limits MILLIMETERSINCHES*Units Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" (0.127mm) per side. Notes: EIAJ Equivalent: SC-74A Drawing No. C04-091 * Controlling Parameter Revised 09-12-05
DS21662E-page 14 © 2006 Microchip Technology Inc. NOTES:
© 2006 Microchip Technology Inc. DS21662E-page 15 TC2014/2015/2185 APPENDIX A: REVISION HISTORY Revision E (May 2006)
- Page 1: Added overtemperature to bullet for over- current protection in features and general descrip- tion verbiage.
- Page 3: Added Thermal Shutdown die Tempera- ture to electrical characteristics table.
- Page 3: Added Thermal Characteristics Table.
- Page 5: Added new section 5.1 and new ver- biage.
- Page 13: Updated package outline drawing. Revision D (November 2004)
- Page 2: Changed Absolute Maximum Ratings from 6.5V to 7.0V.
- Packaging Information: Added package codes for 2.6V and 5.0V options.
- Product Identification S ystem: Added 2.6V and 5.0V to Output voltage options. Revision C (December 2002)
- Numerous changes Revision B (May 2002)
- Numerous changes Revision A (May 2001)
- Original Release of this Document.
DS21662E-page 16 © 2006 Microchip Technology Inc. NOTES:
© 2006 Microchip Technology Inc. DS21662E-page 17 TC2014/2015/2185 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. Device: TC2014: 50 mA LDO with Shutdown and V REF Bypass TC2015: 100 mA LDO with Shutdown and V REF Bypass TC2185: 150 mA LDO with Shutdown and V REF Bypass Output Voltage: XX = 1.8V XX = 2.5V XX = 2.6V XX = 2.7V XX = 2.8V XX = 2.85V XX = 3.0V XX = 3.3V XX = 5.0V Temperature Range: V = -40°C to +125°C Package: CTTR = Plastic Small Outline Transistor (SOT-23), 5-lead, Tape and Reel PART NO. -XX X TemperatureOutput Voltage Device Examples: a) TC2014-1.8VCTTR: 5LD SOT-23-A, 1.8V, Tape and Reel. b) TC2014-2.85VCTTR: 5LD SOT-23-A, 2.85V, Tape and Reel. c) TC2014-3.3VCTTR: 5LD SOT-23-A, 3.3V, Tape and Reel. a) TC2015-1.8VCTTR: 5LD SOT-23-A, 1.8V, Tape and Reel. b) TC2015-2.85VCTTR: 5LD SOT-23-A, 2.85V, Tape and Reel. c) TC2015-3.0VCTTR: 5LD SOT-23-A, 3.0V, Tape and Reel. a) TC2185-1.8VCTTR: 5LD SOT-23-A, 1.8V, Tape and Reel. b) TC2185-2.8VCTTR: 5LD SOT-23-A, 2.8V, Tape and Reel. Range XXXX Package
DS21662E-page 18 © 2006 Microchip Technology Inc. NOTES:
© 2006 Microchip Technology Inc. DS21662E-page 19 Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application me ets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY , PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE . Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting fr om such use. No licenses are conveyed, implicitly or ot herwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Linear Active Thermistor, Mindi, MiWi, MPASM, MPLIB, MPLINK, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel, Total Endurance, UNI/O, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2006, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Note the following details of the code protection feature on Microchip devices:
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- There are dishonest and possibly illegal meth ods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
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- Neither Microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona, Gresham, Oregon and Mountain View, California. The Company’s quality system processes and procedures are for its PICmicro ® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.
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