TC1300 MICROCHIP | Alldatasheet

Document overview

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Technical content

Features

  • LDO with Integrated Microcontroller Reset Monitor Functionality
  • Low Input Supply Current (80 µA, typical)
  • Very Low Dropout Voltage
  • 10 µsec (typ.) Wake-Up Time from SHDN
  • 300 mA Output Current
  • Standard or Custom Output and Detected Voltages
  • Power-Saving Shutdown Mode
  • Bypass Input for Quiet Operation
  • Separate Input for Detected Voltage
  • 140 msec Minimum RESET Output Duration
  • Space-Saving MSOP Package
  • Specified Junction Temperature Range: -40°C to +125°C

Applications

  • Battery-Operated Systems
  • Portable Computers
  • Medical Instruments
  • Pagers
  • Cellular / GSM / PHS Phones Related Literature
  • AN765, “Using Microchip’s Micropower LDOs”, DS00765.
  • AN766, “Pin-Compatible CMOS Upgrades to Bipolar LDOs”, DS00766.
  • AN792, “A Method to Determine How Much Power a SOT23 Can Dissipate in an Application”, DS00792. Package Type General Description The TC1300 combines a low dropout regulator and a microcontroller reset monitor in an 8-Pin MSOP pack- age. Total supply current is 80 µA (typical), 20 to 60 times lower than bipolar regulators. The TC1300 has a precise output with a typical accu- racy of ±0.5%. Other key features include low noise operation, low dropout voltage and internal feed- forward compensation for fast response to step changes in load. The TC1300 has both over-tempera- ture and over-current protection. When the shutdown control (SHDN ) is low, the regulator output voltage falls to zero, RESET output remains valid and supply cur- rent is reduced to 30 µA (typical). The TC1300 is rated for 300 mA of output current and stable with a 1 µF out- put capacitor. An active-low R ESET is asserted when the detected voltage (VDET) falls below the reset voltage threshold. The RESET output remains low for 300 msec (typical) after V DET rises above reset threshold. The TC1300 also has a fast wake-up response time (10 µsec., typical) when released from shutdown. Typical Application Circuit VIN VDET NC VOUT GND Bypass SHDN RESET TC1300VUA MSOP TC1300 4 5 VOUT CBYPASS 470 pF (Optional) Shutdown Control (from Power Control Logic) GND Bypass VIN SHDN VOUT C1 1µ F RESETRESET VDET NC 1µ F Battery VDET TC1300 300 mA CMOS LDO with Shutdown, Bypass and Independent Delayed Reset Function

DS21385C-page 2  2002 Microchip Technology Inc.

1.0 ELECTRICAL

Absolute Maximum Ratings* *Notice: Stresses above those listed under “maximum rat- ings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Expo- sure to maximum rating conditions for extended periods may affect device reliability. PIN DESCRIPTIONS Pin Description RESET RESET output remains low while VDET is below the reset voltage threshold and for 300 msec after VDET rises above reset thesh- old. VOUT Regulated Voltage Output GND Ground Terminal Bypass Reference Bypass Input. Connecting an optional 470 pF to this input further reduces output noise. SHDN Shutdown Control Input. The regulator is fully enabled when a logic high is applied to this input. The regulator enters shutdown when a logic low is applied to this input. During shut- down, regulator output voltage falls to zero, RESET output remains valid and supply cur- rent is reduced to 30 µA (typ.). NC No connect VIN Power Supply Input VDET Detected Input Voltage. VDET and VIN can be connected together.

ELECTRICAL CHARACTERISTICS

VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 µF, SHDN > VIH, TA = 25°C, unless otherwise noted. BOLDFACE type specifications apply for junction temperature (Note 8) of -40°C to +125°C. Parameters Sym Min Typ Max Units Conditions Input Operating Voltage V IN 2.7 — 6.0 V Note 7 Maximum Output Current I OUTMAX 300 —— m A Output Voltage V OUT — VR - 2.5% VR ± 0.5% VR + 2.5% V Note 1 VOUT Temperature Coefficient ∆VOUT/∆T— 25 —p p m / ° C Note 2 Line Regulation ∆VOUT/∆VIN —0 . 0 2 0.35 %( V R + 1V) < VIN < 6V Load Regulation ∆VOUT/VOUT —0 . 5 2.0 %I L = 0.1 mA to IOUTMAX, Note 3 Note 1: VR is the regulator output voltage setting. 3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. 4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V differential. 5: Thermal Regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to I LMAX at VIN = 6V for t = 10 msec. 6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem- perature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissi- pation causes the device to initiate thermal shutdown. Please see Section 4.0, “Thermal Considerations”, of this data sheet for more details. 7: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ (VR + VDROPOUT). 8: The junction temperature of the device is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature over the ambient temperature is not significant. TCV OUT VOUTMAX VOUTMIN–() 106×

 2002 Microchip Technology Inc. DS21385C-page 3 TC1300 Dropout Voltage (Note 4) VIN –VOUT —1 210 130 390 mV I L = 0.1 mA IL = 100 mA IL = 300 mA Supply Current I SS1 —8 0 160 µA SHDN = VIH Shutdown Supply Current I SS2 —3 0 60 µA SHDN = 0V Power Supply Rejection Ratio PSRR — 60 — dB f ≤ 1 kHz, CBYPASS = 1 nF Output Short Circuit Current I OUTSC — 800 1200 mA V OUT = 0V Thermal Regulation ∆VOUT/∆PD — 0.04 — %/W Note 5 Output Noise eN — 900 — nV/Hz f < 1 kHz, C OUT = 1 µF, RLOAD = 50 Ω, CBYPASS = 1 nF Wake-Up Time (from Shutdown Mode) tWK —1 0 2 0 µ s e c C IN = 1 µF, VIN = 5V, COUT = 4.7 µF, IL = 30 mA, See Figure 3-2 Settling Time (from Shutdown Mode) ts — 50 — µsec C IN = 1 µF, VIN = 5V COUT = 4.7 µF IL = 30 mA, See Figure 3-2 Thermal Shutdown Die Temperature TSD —1 5 0 — ° C Thermal Shutdown Hysteresis T HYS —1 0 — ° C Thermal Resistance Junction to Case RthetaJA — 200 — °C/Watt EIA/JEDEC JESD51-751-7 4- Layer Board SHDN Input High Threshold V IH 45 —— % V IN VIN = 2.5V to 6.0V SHDN Input Low Threshold V IL —— 15 %VIN VIN = 2.5V to 6.0V ELECTRICAL CHARACTERISTICS (CONTINUED) VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 µF, SHDN > VIH, TA = 25°C, unless otherwise noted. BOLDFACE type specifications apply for junction temperature (Note 8) of -40°C to +125°C. Parameters Sym Min Typ Max Units Conditions Note 1: VR is the regulator output voltage setting. 3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. 4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V differential. 5: Thermal Regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to I LMAX at VIN = 6V for t = 10 msec. 6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem- perature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissi- pation causes the device to initiate thermal shutdown. Please see Section 4.0, “Thermal Considerations”, of this data sheet for more details. 7: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ (VR + VDROPOUT). 8: The junction temperature of the device is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature over the ambient temperature is not significant. TCV OUT VOUTMAX VOUTMIN–() 106×

DS21385C-page 4  2002 Microchip Technology Inc. RESET Output Voltage Range V DET 1.0 1.2 6.0 6.0 VT A = 0°C to +70°C TA = – 40°C to +125°C Reset Threshold V TH 2.59 2.63 2.66 V TC1300R-XX, T A = +25°C 2.55 — 2.70 TC1300R-XX, TA = – 40°C to +125°C 2.36 2.40 2.43 TC1300Y-XX, T A = +25°C 2.32 — 2.47 TC1300Y-XX, TA = – 40°C to +125°C Reset Threshold Tempco ∆VTH / ∆T — 30 — ppm/°C VDET to Reset Delay t RPD —1 6 0 — µ s e c V DET = VTH to (VTH – 100 mV) Reset Active Timeout Period t RPU 140 300 560 msec RESET Output Voltage Low V OL ——0 . 3 V V DET = VTH min, ISINK = 1.2 mA RESET Output Voltage High V OH 0.8 VDET —— V V DET > VTH max, ISOURCE = 500 µA ELECTRICAL CHARACTERISTICS (CONTINUED) VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 µF, SHDN > VIH, TA = 25°C, unless otherwise noted. BOLDFACE type specifications apply for junction temperature (Note 8) of -40°C to +125°C. Parameters Sym Min Typ Max Units Conditions Note 1: VR is the regulator output voltage setting. 3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. 4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V differential. 5: Thermal Regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to I LMAX at VIN = 6V for t = 10 msec. 6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem- perature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissi- pation causes the device to initiate thermal shutdown. Please see Section 4.0, “Thermal Considerations”, of this data sheet for more details. 7: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ (VR + VDROPOUT). 8: The junction temperature of the device is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature over the ambient temperature is not significant. TCV OUT VOUTMAX VOUTMIN–() 106×

 2002 Microchip Technology Inc. DS21385C-page 5 TC1300

2.0 TYPICAL CHARACTERISTICS

Junction temperature (T J) is approximated by soaking the device under test at an ambient temperature equal to the desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the Ambient temperature is not significant. FIGURE 2-1: Line Regulation vs. Temperature. FIGURE 2-2: Supply Current vs. Temperature. FIGURE 2-3: Normalized VOUT vs. Temperature. FIGURE 2-4: Reset Active Time-out Period vs. Temperature. FIGURE 2-5: Output Noise vs. Frequency. FIGURE 2-6: Dropout Voltage vs. Load Current (2.5V). Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 -40 -25 -10 5 20 35 50 65 80 95 110 125 Junction Temperature (°C) Line Regulation (%) VOUT = 3.0V VIN = 3.5V to 6.0V 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 -40 -25 -10 5 20 35 50 65 80 95 110 125 Junction Temperature (°C) Supply Current (mA) VOUT = 2.5V VOUT = 5.0V VOUT = 3.0V VIN = VOUT + 1V 2.491 2.492 2.493 2.494 2.495 2.496 2.497 2.498 2.499 2.500 -40 -25 -10 5 20 35 50 65 80 95 110 125 Junction Temperature (°C) Output Voltage (V) VIN = VOUT + 1V IOUT = 100 µA VOUT = 2.5V 100 150 200 250 300 350 400 450 -40 -25 -10 5 20 35 50 65 80 95 110 125 Junction Temperature (°C) Reset Active Time-out Perio d (ms) 0.01 0.10 1.00 10.00 Frequency (kHz) Output Noise (µV/lHz) RLOAD = 50 Ohms COUT = 1 µF 1 100010010 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 100 200 300 400 Load Current (mA) Dropout Voltage (V) TJ = +125°C TJ = -40°C TJ = +25°C VOUT = 2.5V

DS21385C-page 6  2002 Microchip Technology Inc.

2.0 TYPICAL CHARACTERISTICS (CON’T)

Junction temperature (T J) is approximated by soaking the device under test at an ambient temperature equal to the desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the Ambient temperature is not significant. FIGURE 2-7: Power Supply Rejection Ratio vs. Frequency. FIGURE 2-8: Reset Voltage Threshold vs. Junction Temperature. FIGURE 2-9: Load Regulation vs. Temperature. FIGURE 2-10: Dropout Voltage vs. Load Current (5.0V). FIGURE 2-11: Wake-Up Response Time. FIGURE 2-12: VDET to Reset Delay vs. Temperature. 10 100 1000 10000 100000 100000 Frequency (Hz) Power Supply Ripple Rejection (dB) VIN = 3.8V VOUT = 2.8V IOUT = 50 mA COUT = 10 µF COUTesr = 0.25 : CBYPASS = 0 µF 1k 10k 100k 1M 2.6275 2.6280 2.6285 2.6290 2.6295 2.6300 2.6305 2.6310 2.6315 2.6320 2.6325 2.6330 -40 -25 -10 5 20 35 50 65 80 95 110 125 Junction Temperature (°C) Reset Voltage Threshold (V) 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 -40 -25 -10 5 20 35 50 65 80 95 110 125 Junction Temperature (°C) Load Regulation (1 mA to 30 0 mA) % VIN = VOUT + 1V VOUT = 3.0V VOUT = 2.5V VOUT = 5.0V 0.05 0.1 0.15 0.2 0.25 0.3 0 100 200 300 400 Load Current (mA) Dropout Voltage (V) TJ = +125°C TJ = -40°C TJ = +25°C VOUT = 5.0V 100 150 200 250 300 -40 -25 -10 5 20 35 50 65 80 95 110 125 Junction Temperature (°C) VDET to RESET Delay Time (µS ) 10 mV Overdrive 100 mV Overdrive

 2002 Microchip Technology Inc. DS21385C-page 7 TC1300 Junction temperature (T J) is approximated by soaking the device under test at an ambient temperature equal to the desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the Ambient temperature is not significant. FIGURE 2-13: Load Transient Response 1 µF Output Capacitor. FIGURE 2-14: Line Transient Response 1 µF Output Capacitor. FIGURE 2-15: Load Transient Response 10 µF Output Capacitor. FIGURE 2-16: Line Transient Response 10 µF Output Capacitor. FIGURE 2-17: RESET Output Voltage Low vs. Junction Temperature. FIGURE 2-18: RESET Output Voltage High vs. Junction Temperature. 0.00 0.05 0.10 0.15 0.20 0.25 0.30 -40 -25 -10 5 20 35 50 65 80 95 110 125 Junction Temperature (°C) RESET VOL (V) VDET = VTH - 20 mV ISINK = 1.2 mA ISINK = 3.2 mA 3.890 3.900 3.910 3.920 3.930 3.940 3.950 3.960 -40 -25 -10 5 20 35 50 65 80 95 110 125 Junction Temperature (°C) RESET VOH (V) VDET = 4.0V ISOURCE = 500 µA ISOURCE = 800 µA

DS21385C-page 8  2002 Microchip Technology Inc.

3.0 DETAILED DESCRIPTION

The TC1300 is a combination of a fixed output, low dropout regulator and a microcontroller monitor/RESET . Unlike bipolar regulators, the TC1300 supply current does not increase with load current. In addition, V OUT remains stable and within regulation over the entire specified operating load range (0 mA to 300 mA) and operating input voltage range (2.7V to 6.0V). Figure 3-1 shows a typical application circuit. The reg- ulator is enabled any time the shutdown input (SHDN is above V IH. The regulator is shutdown (disabled) when SHDN is at or below V IL. SHDN may be con- trolled by a CMOS logic gate or an I/O port of a micro- controller. If the SHDN input is not required, it should be connected directly to the input supply. While in shut- down, supply current decreases to 30 µA (typical), VOUT falls to zero and RESET remains valid.

3.1 RESET Output

The RESET output is driven active-low within 160 µsec of V DET falling through the reset voltage threshold. RESET is maintained active for a minimum of 140 msec after V DET rises above the reset threshold. The TC1300 has an active-low RESET output. The out- put of the TC1300 is valid down to V DET = 1V and is optimized to reject fast transient glitches on the V DET line. FIGURE 3-1: Typical Application Circuit.

3.2 Output Capacitor

A 1 µF (min) capacitor from VOUT to ground is required. A 1 µF capacitor should also be connected from V IN to GND if there is more than 10 inches of wire between the regulator and the AC filter capacitor, or if a battery is used as the power source. As with all low dropout regulators, a minimum output capacitance is required to stabilize the output voltage. For the TC1300, a mini- mum of 1 µF of output capacitance is enough to stabi- lize the device over the entire operating load and line range. The selected output capacitor plays an impor- tant role is compensating the LDO regulator. For the TC1300, the selected output capacitor equivalent series resistance (ESR) range is 0.1 ohms to 5 ohms when using 1 µF of output capacitance, and 0.01 ohms to 5 ohms when using 10 µF of output capacitance. Because of the ESR requirement, tantalum and alumi- num electrolytic capacitors are recommended. Alumi- num electrolytic capacitors are not recommended for operation at temperatures below -25°C. When operat- ing from sources other than batteries, rejection and transient responses can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques.

3.3 Bypass Input (Optional)

An optional 470 pF capacitor connected from the Bypass input to ground reduces noise present on the internal reference, which in turn significantly reduces output noise and improves PSRR performance. This input may be left unconnected. Larger capacitor values may be used, but results in a longer time period to rated output voltage when power is initially applied.

3.4 Turn On Response

The turn-on response is defined as two separate response categories, Wake-Up Time (t WK) and Settling Time (tS). The TC1300 has a fast Wake-Up Time (10 µsec typi- cal) when released from shutdown. See Figure 3-2 for the Wake-Up Time designated as t WK. The Wake-Up Time is defined as the time it takes for the output to rise to 2% of the V OUT value after being released from shutdown. The total turn-on response is defined as the Settling Time (tS) (see Figure 3-2). Settling Time (inclusive with tWK) is defined as the condition when the output is within 2% of its fully enabled value (50 µsec typical) when released from shutdown. The settling time of the output voltage is dependent on load conditions and output capacitance on V OUT (RC response). FIGURE 3-2: Wake-Up Response Time. TC1300 4 5 VOUT CBYPASS 470 pF (Optional) Shutdown Control (from Power Control Logic) GND Bypass VIN SHDN VOUT 1µ F RESET VDET NC 1µ F Battery VDET RESET Microcontroller VIH tS tWK VOUT 98% VIL SHDN

 2002 Microchip Technology Inc. DS21385C-page 9 TC1300

4.0 THERMAL CONSIDERATIONS

4.1 Thermal Shutdown

Integrated thermal protection circuitry shuts the regula- tor off when the die temperature exceeds 150°C. The regulator remains off until the die temperature drops to approximately 140°C.

4.2 Power Dissipation

The amount of power the regulator dissipates is prima- rily a function of input and output voltage, and output current. The following equation is used to calculate worst case actual power dissipation: EQUATION The maximum allowable power dissipation, PDMAX, is a function of the maximum ambient temperature (TAMAX), the maximum recommended die temperature (125°C) and the thermal resistance from junction-to-air ( θJA). The MSOP-8 package has a θJA of approximately 200°C/Watt when mounted on a FR4 dielectric copper clad PC board. EQUATION The worst case actual power dissipation equation can be used in conjunction with the LDO maximum allow- able power dissipation equation to ensure regulator thermal operation is within limits. For example: Find: EQUATION: ACTUAL POWER DISSIPATION EQUATION: MAXIMUM ALLOWABLE POWER DISSIPATION In this example, the TC1300 dissipates a maximum of only 220 mW; below the allowable limit of 350 mW. In a similar manner, the maximum actual power dissipation equation and the maximum allowable power dissipa- tion equation can be used to calculate maximum cur- rent and/or input voltage limits. For example, the maximum allowable V IN is found by substituting the maximum allowable power dissipation of 350 mW into the actual power dissipation equation, from which V INMAX = 4.97V.

4.3 Layout Considerations

The primary path of heat conduction out of the package is via the package leads. Therefore, layouts having a ground plane, wide traces at the pads and wide power supply bus lines combine to lower θ JA and, therefore, increase the maximum allowable power dissipation limit. PD VINMAX VOUTMIN–() ILOADMAX≈ Where: PD = worst case actual power dissipation VINMAX = maximum voltage on V IN VOUTMIN = minimum regulator output voltage ILOADMAX = maximum output (load) current PDMAX TJMAX TAMAX–() θJA Given: VINMAX =4 . 1 V VOUTMIN = 3.0V -2.5% ILOADMAX =2 0 0 m A TJMAX = 125°C TAMAX =5 5 ° C θJA = 200°C/W PD VINMAX VOUTMIN–() ILOADMAX≈ 220 mW= PDMAX TJMAX TAMAX–() θJA 125 55–() 350 mW=

DS21385C-page 10  2002 Microchip Technology Inc.

5.0 PACKAGING INFORMATION

5.1 Package Marking Information

(XXXXXX) TC1300R - 2.5VUA 1300RA TC1300Y - 2.7VUA 1300YF TC1300R - 2.8VUA 1300RB TC1300R - 2.85VUA 1300RC TC1300R - 3.0VUA 1300RD TC1300R - 3.3VUA 1300RE 8-Lead MSOP Example: XXXXXX YWWNNN 1300RA YWWNNN Legend: XX...X Customer specific information* Y Year code (last digit of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. * Standard marking consists of Microchip part number, year code, week code, traceability code (facility code, mask rev#, and assembly code). For marking beyond this, certain price adders apply. Please check with your Microchip Sales Office.

 2002 Microchip Technology Inc. DS21385C-page 11 TC1300

5.2 Package Dimensions

Component Taping Orientation for 8-Pin MSOP Devices User Direction of Feed Standard Reel Component Orientation for TR Suffix Device W P Carrier Tape, Number of Components Per Reel and Reel Size: Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size 8-Pin MSOP 12 mm 8 mm 2500 13 in.

DS21385C-page 12  2002 Microchip Technology Inc. 8-Lead Plastic Micro Small Outline Package (UA) (MSOP) p A D L c Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not .037.035FFootprint (Reference) exceed .010" (0.254mm) per side. Notes: Drawing No. C04-111 *Controlling Parameter Mold Draft Angle Top Mold Draft Angle Bottom Foot Angle Lead Width Lead Thickness β α c B φ .004 .010 .006 .012 (F) β Dimension Limits Overall Height Molded Package Thickness Molded Package Width Overall Length Foot Length Standoff § Overall Width Number of Pins Pitch A L D E .016 .114 .114 .022 .118 .118 .002 .030 .193 .034 MIN p n Units .026 NOM INCHES 1.000.950.90.039 0.15 0.30 .008 .016 0.10 0.25 0.20 0.40 MILLIMETERS* 0.65 0.86 3.00 3.00 0.55 4.90 .044 .122 .028 .122 .038 .006 0.40 2.90 2.90 0.05 0.76 MINMAX NOM 1.18 0.70 3.10 3.10 0.15 0.97 MAX α E B n 1 φ § Significant Characteristic

 2002 Microchip Technology Inc. DS21385C-page13 TC1300 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office . Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom- mended workarounds. T o determine if an errata sheet exists for a particular device, please contact one of the following: 1. Your local Microchip sales office 2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 3. The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products. PART NO. -X.X X TemperatureOutput Voltages Device Device: TC1300X-X.XXXX: 300mA CMOS LDO w/Shutdown, Bypass & Independent Delayed Reset TC1300X-X.XXXXTR: 300mA CMOS LDO w/Shutdown, Bypass & Independent Delayed Reset (Tape and Reel) Output Voltages: RESET Threshold Voltages: -2 . 4 V = Y - 2.63V = R 2.5V = 2.5 2.7V = 2.7 2.8V = 2.8 2.85V = 2.85 3.0V = 3.0 3.3V = 3.3 Temperature Range: V = -40°C to +125°C Package: UA = Micro Small Outline Package (MSOP), 8-lead Examples: a) TC1300R-2.5VUA: 300mA CMOS LDO w/ Shutdown, Bypass & Independent Delayed Reset, 2.5V output voltage, 2.63V RESET Threshold. b) TC1300R-2.8VUA: 300mA CMOS LDO w/Shut- down, Bypass & Independent Delayed Reset, 2.8V output voltage, 2.63V RESET Threshold. c) TC1300R-2.85VUA: 300mA CMOS LDO w/ Shutdown, Bypass & Independent Delayed Reset, 2.85V output voltage, 2.63V RESET Threshold. d) TC1300R-3.0VUA: 300mA CMOS LDO w/Shut- down, Bypass & Independent Delayed Reset, 3.0V output voltage, 2.63V RESET Threshold. e) TC1300R-3.3VUA: 300mA CMOS LDO w/Shut- down, Bypass & Independent Delayed Reset, 3.3V output voltage, 2.63V RESET Threshold. f) TC1300R-2.85VUATR: 300mA CMOS LDO w/ Shutdown, Bypass & Independent Delayed Reset, 2.85V output voltage, 2.63V RESET Threshold, tape and reel. g) TC1300Y-2.7VUA: 300mA CMOS LDO w/ Shut- down, Bypass & independant Delayed Reset, 2.7V output voltage, 2.4V RESET Threshold. /XX Package Range

DS21385C-page 14  2002 Microchip Technology Inc. NOTES:

 2002 Microchip Technology Inc. DS21385C - page 15 Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical com- ponents in life support systems is not authorized except with express written approval by Microchip. No licenses are con- veyed, implicitly or otherwise, under any intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, K EELOQ, MPLAB, PIC, PICmicro, PICSTART and PRO MATE are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, micro ID, MXDEV, MXLAB, PICMASTER, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. dsPIC, dsPICDEM.net, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICC, PICDEM, PICDEM.net, rfPIC, Select Mode and T otal Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2002, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company’s quality system processes and procedures are QS-9000 compliant for its PICmicro ® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001 certified.

DS21385B-page 16  2002 Microchip Technology Inc. M AMERICAS Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: 480-792-7627 Web Address: http://www.microchip.com Rocky Mountain 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7966 Fax: 480-792-4338 Atlanta

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Mississauga, Ontario L4V 1X5, Canada Tel: 905-673-0699 Fax: 905-673-6509 ASIA/PACIFIC Australia Microchip Technology Australia Pty Ltd Suite 22, 41 Rawson Street Epping 2121, NSW Australia Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 China - Beijing Microchip Technology Consulting (Shanghai) Co., Ltd., Beijing Liaison Office Unit 915 Bei Hai Wan T ai Bldg. No. 6 Chaoyangmen Beidajie Beijing, 100027, No. China Tel: 86-10-85282100 Fax: 86-10-85282104 China - Chengdu Microchip Technology Consulting (Shanghai) Co., Ltd., Chengdu Liaison Office Rm. 2401, 24th Floor, Ming Xing Financial Tower No. 88 TIDU Street Chengdu 610016, China Tel: 86-28-86766200 Fax: 86-28-86766599 China - Fuzhou Microchip Technology Consulting (Shanghai) Co., Ltd., Fuzhou Liaison Office Unit 28F, World Trade Plaza No. 71 Wusi Road Fuzhou 350001, China Tel: 86-591-7503506 Fax: 86-591-7503521 China - Shanghai Microchip Technology Consulting (Shanghai) Co., Ltd. Room 701, Bldg. B Far East International Plaza No. 317 Xian Xia Road Shanghai, 200051 Tel: 86-21-6275-5700 Fax: 86-21-6275-5060 China - Shenzhen Microchip Technology Consulting (Shanghai) Co., Ltd., Shenzhen Liaison Office Rm. 1315, 13/F, Shenzhen Kerry Centre, Renminnan Lu Shenzhen 518001, China Tel: 86-755-82350361 Fax: 86-755-82366086 China - Hong Kong SAR Microchip Technology Hongkong Ltd. Unit 901-6, Tower 2, Metroplaza

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No. 11, O’Shaugnessey Road Bangalore, 560 025, India Tel: 91-80-2290061 Fax: 91-80-2290062 Japan Microchip Technology Japan K.K. Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Korea Microchip Technology Korea 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku Seoul, Korea 135-882 Tel: 82-2-554-7200 Fax: 82-2-558-5934 Singapore Microchip Technology Singapore Pte Ltd.

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#07-02 Prime Centre Singapore, 188980 Tel: 65-6334-8870 Fax: 65-6334-8850 Taiwan Microchip Technology (Barbados) Inc., Taiwan Branch 11F-3, No. 207 Tung Hua North Road Taipei, 105, Taiwan Tel: 886-2-2717-7175 Fax: 886-2-2545-0139 EUROPE Austria Microchip Technology Austria GmbH Durisolstrasse 2 A-4600 Wels Austria Tel: 43-7242-2244-399 Fax: 43-7242-2244-393 Denmark Microchip Technology Nordic ApS Regus Business Centre Lautrup hoj 1-3 Ballerup DK-2750 Denmark Tel: 45 4420 9895 Fax: 45 4420 9910 France Microchip Technology SARL Parc d’Activite du Moulin de Massy

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