TC1202 ETC2 | Alldatasheet

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Technical content

TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 January 2002 Super Low Noise GaAs FETs

FEATURES

  • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
  • High Associated Gain: Ga = 12 dB Typical at 12 GHz
  • Lg = 0.25 µm, Wg = 300 µm
  • All-Gold Metallization for High Reliability
  • 100 % DC Tested

DESCRIPTION

The TC1202 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure and high associated gain. The device can be used in circuits up to 40 GHz and suitable for low noise application including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (T A=25 °°°°C) Symbol CONDITIONS MIN TYP MAX UNIT NF Noise Figure at V DS = 4 V, IDS = 25 mA, f = 12GHz 0.5 0.7 dB Ga Associated Gain at VDS = 4 V, IDS = 25 mA, f = 12GHz 11 12 dB IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V 90 mA gm Transconductance at VDS = 2 V, VGS = 0 V 100 mS VP Pinch-off V oltage at VDS = 2 V, ID = 0.6 mA -1.0 V olts BVDGO Drain-Gate Breakdown V oltage at IDGO =0.15 mA 58 V o l t s Rth Thermal Resistance 43 °C/W PHOTO ENLARGEMENT

TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science- Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 ABSOLUTE MAXIMUM RATINGS (TA=25 °°°°C) Symbol Parameter Rating VDS Drain-Source Voltage 5 V VGS Gate-Source V oltage -3.0 V IDS Drain Current I DSS IGS Gate Current 300 µA Pin RF Input Power, CW 17 dBm PT Continuous Dissipation 300 mW TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C TYPICAL NOISE PARAMETERS (TA=25 °°°°C) VDS = 4 V , IDS = 25 mA ΓoptFrequency (GHz) NFopt (dB) GA (dB) MAG ANG Rn/50 2 0.31 20.6 0.90 10 0.64 4 0.37 17.2 0.81 20 0.45 6 0.41 14.8 0.74 37 0.35 8 0.47 13.1 0.69 57 0.29 10 0.52 12.1 0.64 77 0.24 12 0.58 11.4 0.58 95 0.20 14 0.71 10.8 0.55 113 0.16 16 0.88 10.4 0.52 130 0.11 18 1.04 9.9 0.51 151 0.08 CHIP DIMENSIONS Units: Micrometers Gate Pad: 55 x 60 Chip Thickness: 100 Drain Pad: 55 x 60 Source Pad: 55 x 169 SS G D 280 ± 12 290 ± 12

TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 TYPICAL SCATTERING PARAMETERS (TA=25 °°°°C) VDS = 4 V , IDS = 25 mA FREQUENCY S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG

  • The data does not include gate, drain and source bond wires. 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 Swp Max 18GHz Swp Min 2GHz S11 90105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90-75 -60 -45 -30 -15 Swp Max

18 GHz

2 GHz

0.1 0.01 Per Div S12 90105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90-75 -60 -45 -30 -15 Swp Max 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 Swp Max 18GHz Swp Min 2GHz S22

TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 SMALL SIGNAL MODEL, VDS = 4 V , IDS = 25 mA Cgs Cgd Cds Rg Rd RdsRi Rs Gm T Lg Ld Ls PARAMETERS Parameters Parameters Lg 0.04473 nH Rs 1.12 Ohm Rg 0.79 Ohm Ls 0.0005 nH Cgs 0.361 pF Cds 0.0838 pF Ri 1.47 Ohm Rds 193.0 Ohm Cgd 0.0310 pF Rd 0.920 Ohm Gm 94.9 mS Ld 0.0242 nH T 2.13 psec CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V . SCHEMATIC