DTC114TE SECOS | Alldatasheet
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Technical content
DTC114TE/DTC114TUA/DTC114TKA DTC114TCA/TC114TSA NPN Digital Transistors (Built-in Resistors)
FEATURES
- Built-in bias resistors enable the configuration of an inverter circuit without connecting input resistors * Only the on/off confitions need to be set for operation, making device design easy. * The bias resistors consis of thin-film resistors with compete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. Elektronische Bauelemente http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 PIN CONNENCTIONS AND MARKING (1) Emitter (2) Collector (3) Base (1) Base (2) Emitter (3) Collector (1) Base (2) Emitter (3) Collector (1) Base (2) Emitter (3) Collector (1) Base (2) Emitter (3) Collector (1) Base (2) Emitter (3) Collector (1) Base (2) Emitter (3) Collector (1) Base (2) Emitter (3) Collector A b b r e vi a t ed sym b o l : 04 A b b r e vi a t ed sym b o l :04 A b b r e vi a t ed sym b o l : 04 A b b r e vi a t ed sym b o l : 04 SOT-523 SOT-23-3L SOT-23 SOT-323 TO-92S DTC114TE DTC114TUA DTA114ECA DTC114TCA DTC114TKA DTC114TSA
01-Jun-2002 Rev. A Page 2 of 2 Elektronische Bauelemente MAXIMUM RATINGS* TA=25 ℃ unless otherwise noted LIMITS(DTC114T□) Symbol Para meter E UA KA CA SA Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 100 mA PC Collector Dissipation 150 200 300 mW Tj Junction temperature 150 ℃ TJ, Tstg Junction and Storage Temperature -55~+150 ℃ ELECTRICAL CHARA CTERISTICS (Tamb=25℃ unless other wise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=50µA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO Ic=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=50µA,IC=0 5 V Collector cut-off current ICBO VCB=50V,IE=0 0.5 uA Emitter cut-off current IEBO VEB=4V,IC=0 0.5 uA DC current gain hFE VCE=5V,IC=1mA 100 300 600 Collector-emitter saturation voltage VCE(sat) I C=10mA,IB=1mA 0.3 V Transition frequency fT VCE=10V,IE=-5mA, f=100MHz 250 MHz Imput resistor R1 7 10 13 kΩ Typical Characteristics http://www.SeCoSGmbH.com Any changing of specification will not be informed individua DTC114TE/DTC114TUA/DTC114TKA DTC114TCA/TC114TSA NPN Digital Transistors (Built-in Resistors)