TC1016-2.6VCTTR

TC1016_05 MICROCHIP | Alldatasheet

Document overview

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Technical content

Features

• Space-Saving 5-Pin SC-70 and SOT-23 Packages
• Extremely Low Operating Current for Longer Battery Life: 53 µA (typ.)
• Very Low Dropout Voltage
• Rated 80 mA Output Current
• Requires only 1 µF Ceramic Output Capacitance
• High Output Voltage Accuracy: ±0.5% (typ.)
• 10 µsec (typ.) Wake-Up Time from SHDN
• Power-Saving Shutdown Mode: 0.05 µA(typ.)
• Overcurrent and Overtemperature Protection
• Pin Compatible Upgrade for Bipolar Regulators

Applications

• Cellular/GSM/PHS Phones
• Battery-operated Systems
• Portable Computers
• Medical Instruments
• Electronic Games
• Pagers General Description The TC1016 is a high-accuracy (typically ±0.5%), CMOS upgrade for bipolar low dropout regulators (LDOs). The TC1016 is offered in both the SC-70 and SOT-23 packages. The SC-70 package represents a 50% footprint reduction versus the popular SOT-23 package. Developed specifically for battery-powered systems, the device’s CMOS construction consumes only 53 µA typical supply current over the entire 80 mA operating load range. This can be as much as 60 times less than the quiescent operating current consumed by bipolar LDOs. With small-space requirements and cost in mind, the TC1016 was developed to be stable over the entire input voltage and output current operating range using low value (1 µF ceramic), low Equivalent Series Resistance (ESR) output capacitors. Additional integrated features (such as shutdown, overcurrent and overtemperature protection) further reduce board space and cost of the entire voltage-regulating application. Key performance parameters for the TC1016 are low drop out voltage (150 mV (typ.) at 80 mA output current), low supply current while shutdown (0.05 µA typical) and fast stable response to sudden input voltage and load changes. Pin Configurations SC-70 SHDN NC VOUT VIN GND TC1016 SOT-23 NC VOUT SHDN GND VIN TC1016 TC1016 80 mA, Tiny CMOS LDO With Shutdown

© 2005 Microchip Technology Inc. 1.0 ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS* *Notice: Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static dis- charge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional oper- ation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability

ELECTRICAL CHARACTERISTICS

VIN = VR + 1V, IL = 100 µA, CL = 1.0µF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface type specifications apply for junction temperatures of – 40°C to +125°C. Parameter Sym Min Typ Max Units Test Conditions Input Operating Voltage VIN 2.7 6.0 V Note 1 Maximum Output Current IOUTMAX mA Output Voltage VOUT VR – 2.5% VR ±0.5% VR + 2.5% V Note 2 VOUT Temperature Coefficient TCVOUT ppm/°C Note 3 Line Regulation (ΔVOUT/ΔVIN)/VR 0.01 0.2 %/V (VR + 1V) < VIN < 6V Load Regulation (Note 4) ΔVOUT/VR 0.23 IL = 0.1 mA to IOUTMAX Dropout Voltage (Note 5) VIN – VOUT 100 150 200 300 mV IL = 100 µA IL = 50 mA IL = 80 mA Supply Current IIN µA SHDN = VIH, IL = 0 Shutdown Supply Current IINSD 0.05 0.5 µA SHDN = 0V Power Supply Rejection Ratio PSRR dB f =1 kHz, IL = 50 mA Wake-Up Time (from Shutdown mode) tWK µs VIN = 5V, IL = 60 mA, CIN = 1 µF, COUT = 1 µF, f = 100 Hz Settling Time (from Shutdown Mode) tS µs VIN = 5V, IL = 60 mA,CIN = 1 µF, COUT = 1 µF, f = 100 Hz Output Short Circuit Current IOUTSC 120 mA VOUT = 0V Thermal Regulation VOUT/PD 0.04 V/W Notes 6, 7 Thermal Shutdown Die Temperature TSD 160 Thermal Shutdown Hysteresis ΔTSD Output Noise eN 800 nV/√Hz f = 10 kHz SHDN Input High Threshold VIH %VIN VIN = 2.7V to 6.0V SHDN Input Low Threshold VIL %VIN VIN = 2.7V to 6.0V Note The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ (VR + 2.5%)+VDROPOUT. Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the Thermal Regulation specification. Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value at a 1V differential. Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to Ilmax at VIN = 6V for t = 10 msec. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable juction temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” of this data sheet for more details. TCVOUT VOUTMAX VOUTMIN 106 VOUT T Δ

© 2005 Microchip Technology Inc. 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE 3.1 Shutdown Control Input (SHDN) The regulator is fully enabled when a logic-high is applied to SHDN. The regulator enters shutdown when a logic-low is applied to this input. During shutdown, the output voltage falls to zero and the supply current is reduced to 0.05 µA (typ.) 3.2 Ground Terminal (GND) For best performance, it is recommended that the ground pin be tied to a ground plane. 3.3 Regulated Voltage Output (VOUT) Bypass the regulated voltage output to GND with a minimum capacitance of 1 µF. A ceramic bypass capacitor is recommended for best performance. 3.4 Unregulated Supply Input (VIN) The minimum VIN has to meet two conditions in order to ensure that the output maintains regulation: VIN ≥2.7V and VIN ≥ [(VR + 2.5%) + VDROPOUT]. The maximum VIN should be less than or equal to 6V. Power dissipation may limit VIN to a lower potential in order to maintain a junction temperature below 125°C. Refer to Section 5.0 “Thermal Considerations”, for determining junction temperature. It is recommended that VIN be bypassed to GND with a ceramic capacitor. 5-Pin SC-70 Pin No. 5-Pin SOT-23 Name Function SHDN Shutdown control input NC No connect GND Ground terminal VOUT Regulated voltage output VIN Unregulated supply input

© 2005 Microchip Technology Inc. DS21666B-page 11 TC1016 5.0 THERMAL CONSIDERATIONS 5.1 Thermal Shutdown Integrated thermal-protection circuitry shuts the regulator off when die temperature exceeds approximately 160°C. The regulator remains off until the die temperature drops to approximately 150°C. 5.2 Power Dissipation The TC1016 is available in the SC-70 package. The thermal resistance for the SC-70 package is approxi- mately 450°C/W when the copper area used in the PCB layout is similar to the JEDEC J51-7 high thermal conductivity or Semi G42-88 standards. For applica- tions with larger or thicker copper areas, the thermal resistance can be lowered. See AN792 “A Method to Determine How Much Power a SOT23 Can Dissipate in an Application” (DS00792), for a method to determine the thermal resistance for a particular application. The TC1016 power dissipation capability is dependant upon several variables: input voltage, output voltage, load current, ambient temperature and maximum junction temperature. The absolute maximum steady- state junction temperature is rated at 125°C. The power dissipation within the device is equal to: EQUATION 5-1: The VIN x IGND term is typically very small when com- pared to the (VIN-VOUT) x ILOAD term simplifying the power dissipation within the LDO to be: EQUATION 5-2: To determine the maximum power dissipation capability, the following equation is used: EQUATION 5-3: Given the following example: Find: Internal power dissipation: Junction temperature: Maximum allowable dissipation: In this example, the TC1016 dissipates approximately 82.2 mW and the junction temperature is raised 37°C over the 55°C ambient to 92°C. The absolute maximum power dissipation is 155 mW when given a maximum ambient temperature of 55°C. Input voltage, output voltage or load current limits can also be determined by substituting known values in Equation 5-2 and Equation 5-3. 5.3 Layout Considerations The primary path for heat conduction out of the SC-70 package is through the package leads. Using heavy, wide traces at the pads of the device will facilitate the removal of heat within the package, thus lowering the thermal resistance RθJA. By lowering the thermal resistance, the maximum internal power dissipation capability of the package is increased. FIGURE 5-1: Suggested layout PD VIN VOUT ILOAD VIN IGND PD VIN VOUT ILOAD PDMAX TJ_MAX TA_MAX RθJA Where: TJ_MAX = maximum junction temperature allowed TA_MAX = the maximum ambient temperature allowed RθJA = the thermal resistance from junction-to-air VIN 3.0V to 4.1V VOUT 2.8V ±2.5% ILOAD 60 mA (output current) TAMAX 55°C (max. ambient temp.) PDMAX VIN_MAX VOUT_MIN ILOAD 4.1V 2.8 0.975 60mA 82.2mW TJ_MAX PDMAX RθJA 82.2mWatts 450°C/W TAMAX 92°C 37°C 55°C PD TJ_MAX TA_MAX RθJA 155mW 125°C 55°C 450°C/W SHDN VIN VOUT GND

© 2005 Microchip Technology Inc. 6.0

PACKAGE INFORMATION

6.1 Package Marking Information 5-Lead SC-70 Example: XXN (Front) YWW (Back) AE7 (Front) 432 (Back) 5-Lead SC-70 Example: XXNN AE74 Part Number Code TC1016 – 1.8VLT AE TC1016 – 1.85VLT AW TC1016 – 2.6VLT AF TC1016 – 2.7VLT AG TC1016 – 2.8VLT AH TC1016 – 2.85VLT AJ TC1016 – 2.9VLT AK TC1016 – 3.0VLT AL TC1016 – 3.3VLT AM TC1016 – 4.0VLT AP Legend: XX...X Customer-specific information* Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( ) can be found on the outer packaging for this package. Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. e e

© 2005 Microchip Technology Inc. DS21666B-page 13 TC1016 6.1 Package Marking Information (Continued) 5-Lead SOT-23 Part Number Code TC1016 – 1.8VCT HK TC1016 – 1.85VCT HW TC1016 – 2.6VCT HL TC1016 – 2.7VCT HM TC1016 – 2.8VCT HP TC1016 – 2.85VCT HQ TC1016 – 2.9VCT HR TC1016 – 3.0VCT HS TC1016 – 3.3VCT HT TC1016 – 4.0VCT HU Example XXNN HK73

© 2005 Microchip Technology Inc. 5-Lead Plastic Small Outline Transistor (LT) (SC-70) Dimensions: inches (mm) 0.30 0.15 .012 .006 B Lead Width 0.18 0.10 .007 .004 c Lead Thickness 0.30 0.10 .012 .004 L Foot Length 2.20 1.80 .087 .071 D Overall Length 1.35 1.15 .053 .045 Molded Package Width 2.40 1.80 .094 .071 E Overall Width 0.10 0.00 .004 .000 Standoff 1.00 0.80 .039 .031 Molded Package Thickness 1.10 0.80 .043 .031 A Overall Height 0.65 (BSC) .026 (BSC) p Pitch n Number of Pins MAX NOM MIN MAX NOM MIN Dimension Limits MILLIMETERS* INCHES Units exceed .005" (0.127mm) per side. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not Notes: JEITA (EIAJ) Standard: SC-70 Drawing No. C04-061 *Controlling Parameter L E c D B p A Top of Molded Pkg to Lead Shoulder .004 .016 0.10 0.40 n

© 2005 Microchip Technology Inc. DS21666B-page 15 TC1016 5-Lead Plastic Small Outline Transistor (OT) (SOT-23) β Mold Draft Angle Bottom α Mold Draft Angle Top 0.50 0.43 0.35 .020 .017 .014 B Lead Width 0.20 0.15 0.09 .008 .006 .004 c Lead Thickness φ Foot Angle 0.55 0.45 0.35 .022 .018 .014 L Foot Length 3.10 2.95 2.80 .122 .116 .110 D Overall Length 1.75 1.63 1.50 .069 .064 .059 Molded Package Width 3.00 2.80 2.60 .118 .110 .102 E Overall Width 0.15 0.08 0.00 .006 .003 .000 Standoff 1.30 1.10 0.90 .051 .043 .035 Molded Package Thickness 1.45 1.18 0.90 .057 .046 .035 A Overall Height 1.90 .075 Outside lead pitch (basic) 0.95 .038 p Pitch n Number of Pins MAX NOM MIN MAX NOM MIN Dimension Limits MILLIMETERS INCHES* Units p D B n E L c β φ α A exceed .005" (0.127mm) per side. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not Notes: EIAJ Equivalent: SC-74A Drawing No. C04-091 *Controlling Parameter

© 2005 Microchip Technology Inc. NOTES:

© 2005 Microchip Technology Inc. DS21666B-page 17 TC1016 APPENDIX A:

REVISION HISTORY

Revision B (March 2005)

• Updated Section 6.0 “Package Information” to include old and new packaging examples, as well as replaced SC-70 package diagram with up-to- date version. Added additional voltage options
• Added SOT-23 package and voltage options.
• Applied new template and rearranged sections to be consistent with current documentation. .Revision A (October 2001)
• Original Release of this Document.

© 2005 Microchip Technology Inc. NOTES:

© 2005 Microchip Technology Inc. DS21666A-page19 TC1016 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. Device: TC1016: 80 mA Tiny CMOS LDO with Shutdown Voltage Options*: (Standard) 1.8V 1.85V 2.6V 2.7V 2.8V 2.85V 2.9V 3.0V 3.3V 4.0V * Other voltage options available. Please contact your local Microchip sales office for details. Temperature Range: V = -40°C to +125°C Packages: LTTR = 5-pin SC-70 (Tape and Reel) CTTR = 5-pin SOT-23 (Tape and Reel) Examples: TC1016-1.8VCTTR: 80 mA Tiny CMOS LDO with Shutdown, TC1016-1.8VLTTR: 80 mA Tiny CMOS LDO with Shutdown, TC1016-1.85VCTTR: 80 mA Tiny CMOS LDO with Shutdown, TC1016-1.85VLTTR: 80 mA Tiny CMOS LDO with Shutdown, TC1016-2.6VCTTR: 80 mA Tiny CMOS LDO with Shutdown, TC1016-2.6VLTTR: 80 mA Tiny CMOS LDO with Shutdown, TC1016-2.7VCTTR: 80 mA Tiny CMOS LDO with Shutdown, TC1016-2.7VLTTR: 80 mA Tiny CMOS LDO with Shutdown, TC1016-2.8VCTTR: 80 mA Tiny CMOS LDO with Shutdown, TC1016-2.8VLTTR: 80 mA Tiny CMOS LDO with Shutdown, TC1016-2.85VLTTR: 80 mA Tiny CMOS LDO with Shutdown, PART NO. X.XX X Temperature Voltage Options Device Range XXXX Package

© 2005 Microchip Technology Inc. NOTES:

© 2005 Microchip Technology Inc. DS21666B-page 21 Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WAR- RANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB, PICMASTER, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel, Total Endurance and WiperLock are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2005, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Note the following details of the code protection feature on Microchip devices: Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Microchip received ISO/TS-16949:2002 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona and Mountain View, California in October 2003. The Company’s quality system processes and procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.

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