TC1014

TC1014 MICROCHIP | Alldatasheet

Document overview

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Technical content

Features

• Extremely Low Supply Current (50 µA, Typ.)  Very Low Dropout Voltage  Choice of 50mA (TC1014), 100mA (TC1015) and 150mA (TC1016) Output  High Output Voltage Accuracy  Standard or Custom Output Voltages  Power Saving Shutdown Mode  Reference Bypass Input for Ultra Low-Noise Operation  Over Current and Over Temperature Protection  Space-Saving 5-Pin SOT-23A Package  Pin Compatible Upgrades for Bipolar Regulators

Applications

 Battery Operated Systems  Portable Computers  Medical Instruments  Instrumentation  Cellular/GSM/PHS Phones  Linear Post-Regulator for SMPS

• Pagers Device Selection Table NOTE: xx indicates output voltages. Available output Other output voltages are available. Please contact Microchip Technology Inc. for details. Package Type Part Number Package Junction Temp. Range TC1014-xxVCT 5-Pin SOT-23A -40°C to +125°C TC1015-xxVCT 5-Pin SOT-23A -40°C to +125°C TC1185-xxVCT 5-Pin SOT-23A -40°C to +125°C Bypass SHDN 5-Pin SOT-23A TC1014 TC1015 TC1185 VIN VOUT GND NOTE: 5-Pin SOT-23A is equivalent to the EIAJ (SC-74A) 50mA, 100mA and 150mA CMOS LDOs with Shutdown and Reference Bypass

DS21335B-page 2  2002 Microchip Technology Inc. General Description The TC1014/TC1015/TC1185 are high accuracy (typically ±0.5%) CMOS upgrades for older (bipolar) low dropout regulators such as the LP2980. Designed specifically for battery-operated systems, the devices’ CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply current is typically 50µA at full load (20 to 60 times lower than in bipolar regulators). The devices’ key features include ultra low noise oper- ation (plus optional Bypass input), fast response to step changes in load, and very low dropout voltage – typically 85mV (TC1014); 180mV (TC1015); and 270mV (TC1185) at full load. Supply current is reduced to 0.5 µA (max) and V OUT falls to zero when the shutdown input is low. The devices incorporate both over-temperature and over-current protection. The TC1014/TC1015/TC1185 are stable with an output capacitor of only 1 µF and have a maximum output current of 50mA, 100mA and 150mA, respectively. For higher output current regulators, please see the TC1107/TC1108/TC1173 (I OUT = 300mA) data sheets. Typical Application TC1014 TC1015 TC1185 VOUT SHDN GND Bypass 470pF Reference Bypass Cap (Optional) 1µF V IN VIN VOUT 1 5 Shutdown Control (from Power Control Logic)

 2002 Microchip Technology Inc. DS21335B-page 3 TC1014/TC1015/TC1185

1.0 ELECTRICAL

Absolute Maximum Ratings* Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS Electrical Characteristics: VIN =V R +1 V ,IL = 100µA, CL =3 . 3µF, SHDN >V IH,T A = 25°C, unless otherwise noted. Boldface type specifications apply for junction temperatures of -40°C to +125°C. Symbol Parameter Min Typ Max Units Device Test Conditions VIN Input Operating Voltage 2.7 — 6.0 V Note 1 IOUTMAX Maximum Output Current 50 100 150 mA TC1014 TC1015 TC1185 V OUT Output Voltage VR –2 . 5 % VR ±0.5% VR +2 . 5 % V Note 2 TCVOUT VOUT Temperature Coefficient — ppm/°C Note 3 ∆VOUT/∆VIN Line Regulation — 0.05 0.35 %( V R +1 V )≤ VIN ≤ 6V ∆VOUT/VOUT Load Regulation — 0.5 0.5 % TC1014; TC1015 TC1185 IL = 0.1mA to IOUTMAX IL = 0.1mA to IOUTMAX (Note 4) VIN-VOUT Dropout Voltage — 180 270 120 250 400 mV TC1015; TC1185 TC1185 I L = 100µA IL = 20mA IL = 50mA IL = 100mA IL = 150mA (Note 5) IIN Supply Current (Note 8) — 50 80 µAS H D N =V IH,I L =0 IINSD Shutdown Supply Current — 0.05 0.5 µAS H D N =0 V PSRR Power Supply Rejection Ratio —6 4— d B F RE ≤ 1kHz IOUTSC Output Short Circuit Current — 300 450 mA V OUT =0 V ∆VOUT/∆PD Thermal Regulation — 0.04 — V/W Notes 6, 7 TSD Thermal Shutdown Die Temperature — 160 — °C ∆TSD Thermal Shutdown Hysteresis —1 0— ° C eN Output Noise — 600 — nV/ √Hz IL =I OUTMAX, F = 10kHz 470pF from Bypass to GND Note 1: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VR +V DROPOUT. 4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V differential. 6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec. 7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA,T J, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 4.0 Thermal Considerations for more details. 8: Apply for Junction Temperatures of -40°C to +85°C. TC VOUT =( VOUTMAX –V OUTMIN)x 106 VOUT x ∆T

DS21335B-page 4  2002 Microchip Technology Inc. TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS (CONTINUED) Electrical Characteristics: VIN =V R +1 V ,IL =1 0 0µA, CL =3 . 3µF, SHDN >V IH,T A = 25°C, unless otherwise noted. Boldface type specifications apply for junction temperatures of -40°C to +125°C. Symbol Parameter Min Typ Max Units Test Conditions SHDN Input VIH SHDN Input High Threshold 45 — — %V IN VIN =2 . 5 Vt o6 . 5 V VIL SHDN Input Low Threshold — — 15 %V IN VIN =2 . 5 Vt o6 . 5 V Note 1: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VR +V DROPOUT. 4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V differential. 6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec. 7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA,T J, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 4.0 Thermal Considerations for more details. 8: Apply for Junction Temperatures of -40°C to +85°C. TC VOUT =( VOUTMAX –V OUTMIN)x 106 VOUT x ∆T

 2002 Microchip Technology Inc. DS21335B-page 5 TC1014/TC1015/TC1185

2.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 2-1. TABLE 2-1: PIN FUNCTION TABLE Pin No. (5-Pin SOT-23A) Symbol Description 1V IN Unregulated supply input. 2 GND Ground terminal.

3 SHDN

Shutdown control input. The regulator is fully enabled when a logic high is applied to this input. The regulator enters shutdown when a logic low is applied to this input. During shutdown, output voltage falls to zero, ERROR is open circuited and supply current is reduced to 0.5 µA (max). 4 Bypass Reference bypass input. Connecting a 470pF to this input further reduces output noise. OUT Regulated voltage output.

DS21335B-page 6  2002 Microchip Technology Inc.

3.0 DETAILED DESCRIPTION

The TC1014/TC1015/TC1185 are precision fixed output voltage regulators. (If an adjustable version is desired, please see the TC1070/TC1071/TC1187 data sheet.) Unlike bipolar regulators, the TC1014/TC1015/ TC1185 supply current does not increase with load current. In addition, V OUT remains stable and within regulation over the entire 0mA to I OUTMAX operating load current ranges (an important consideration in RTC and CMOS RAM battery back-up applications). Figure 3-1 shows a typical application circuit. The regulator is enabled any time the shutdown input (SHDN )i sa to ra b o v eV IH, and shutdown (disabled) when SHDN is at or below V IL. SHDN may be controlled by a CMOS logic gate, or I/O port of a microcontroller. If the SHDN input is not required, it should be connected directly to the input supply. While in shutdown, supply current decreases to 0.05 µA (typical), VOUT f a l l st oz e r ov o l t s . FIGURE 3-1: TYPICAL APPLICATION CIRCUIT

3.1 Bypass Input

A 470pF capacitor connected from the Bypass input to ground reduces noise present on the internal reference, which in turn significantly reduces output noise. If output noise is not a concern, this input may be left unconnected. Larger capacitor values may be used, but results in a longer time period to rated output voltage when power is initially applied.

3.2 Output Capacitor

A1 µF( m i n )c a p a c i t o rf r o mVOUT to ground is required. The output capacitor should have an effective series resistance greater than 0.1 Ω and less than 5 Ω.A1 µF capacitor should be connected from VIN to GND if there is more than 10 inches of wire between the regulator and the AC filter capacitor, or if a battery is used as the power source. Aluminum electrolytic or tantalum capacitor types can be used. (Since many aluminum electrolytic capacitors freeze at approximately -30°C, solid tantalums are recommended for applications operating below -25°C.) When operating from sources other than batteries, supply-noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques. TC1014 TC1015 TC1185 VOUT SHDN GND Bypass 470pF Reference Bypass Cap (Optional) 1µF VIN VOUT Shutdown Control (to CMOS Logic or Tie to VIN if unused) 1µF Battery

 2002 Microchip Technology Inc. DS21335B-page 7 TC1014/TC1015/TC1185

4.0 THERMAL CONSIDERATIONS

4.1 Thermal Shutdown

Integrated thermal protection circuitry shuts the regulator off when die temperature exceeds 160°C. The regulator remains off until the die temperature drops to approximately 150°C.

4.2 Power Dissipation

The amount of power the regulator dissipates is primarily a function of input and output voltage, and output current. The following equation is used to calculate worst case actual power dissipation: EQUATION 4-1: The maximum allowable power dissipation (Equation 4-2) is a function of the maximum ambient temperature (TAMAX), the maximum allowable die temperature (TJMAX) and the thermal resistance from junction-to-air (θJA). The 5-Pin SOT-23A package has a θJA of approximately 220°C/Watt. EQUATION 4-2: Equation 4-1 can be used in conjunction with Equation 4-2 to ensure regulator thermal operation is within limits. For example: Given: V INMAX = 3.0V +10% VOUTMIN =2 . 7 V–2 . 5 % ILOADMAX =4 0 m A TJMAX = 125°C TAMAX =5 5 ° C Find: 1. Actual power dissipation 2. Maximum allowable dissipation Actual power dissipation: PD ≈ (VINMAX –V OUTMIN)ILOADMAX = 26.7mW Maximum allowable power dissipation: In this example, the TC1014 dissipates a maximum of 26.7mW; below the allowable limit of 318mW. In a similar manner, Equation 4-1 and Equation 4-2 can be used to calculate maximum current and/or input voltage limits.

4.3 Layout Considerations

The primary path of heat conduction out of the package is via the package leads. Therefore, layouts having a ground plane, wide traces at the pads, and wide power supply bus lines combine to lower θ JA and therefore increase the maximum allowable power dissipation limit. Where: PD ≈ (VINMAX –V OUTMIN)ILOADMAX PD VINMAX VOUTMIN ILOADMAX = Worst case actual power dissipation = Minimum regulator output voltage = Maximum output (load) current = Maximum voltage on VIN PDMAX =( TJMAX –T AMAX) θJA Where all terms are previously defined. PDMAX=( TJMAX –T AMAX) θJA = (125 – 55) 220 = 318mW

DS21335B-page 8  2002 Microchip Technology Inc.

5.0 TYPICAL CHARACTERISTICS

(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C) Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Dropout Voltage vs. Temperature 0.000 0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 0.018 0.020 -40 -20 0 20 50 70 125 TEMPERATURE (°C) DROPOUT VOLTAGE (V)CIN = 1µF COUT = 1µF VOUT = 3.3V ILOAD = 10mA 0.000 0.020 0.040 0.060 0.080 0.100 0.120 0.140 0.160 0.180 0.200 -40 -20 0 20 50 70 125 DROPOUT VOLTAGE (V) TEMPERATURE (°C) CIN = 1µF COUT = 1µF Dropout Voltage vs. Temperature VOUT = 3.3V ILOAD = 100mA GND CURRENT (µA) VIN (V) CIN = 1µF COUT = 1µF Ground Current vs. V IN VOUT = 3.3V ILOAD = 10mA Dropout Voltage vs. Temperature 0.000 0.010 0.020 0.030 0.040 0.050 0.060 0.070 0.080 0.090 0.100 -40 -20 0 20 50 70 125 DROPOUT VOLTAGE (V) TEMPERATURE (°C) CIN = 1µF COUT = 1µF VOUT = 3.3V ILOAD = 50mA 0.000 0.050 0.100 0.150 0.200 0.250 0.300 -40 -20 0 20 50 70 125 DROPOUT VOLTAGE (V) TEMPERATURE (°C) CIN = 1µF COUT = 1µF Dropout Voltage vs. Temperature VOUT = 3.3V ILOAD = 150mA GND CURRENT (µA) VIN (V) CIN = 1µF COUT = 1µF Ground Current vs. V IN VOUT = 3.3V ILOAD = 100mA

 2002 Microchip Technology Inc. DS21335B-page 9 TC1014/TC1015/TC1185

5.0 TYPICAL CHARACTERISTICS (CONTINUED)

(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C) GND CURRENT (µA) VIN (V) CIN = 1µF COUT = 1µF Ground Current vs. V IN VOUT = 3.3V ILOAD = 150mA 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VIN (V) CIN = 1µF COUT = 1µF ILOAD = 100mA VOUT (V) VOUT vs. VIN VOUT = 3.3V ILOAD = 100mA Output Voltage vs. Temperature 3.274 3.276 3.278 3.280 3.282 3.284 3.286 3.288 3.290 -40 -20 -10 0 20 40 85 125 VOUT (V) TEMPERATURE (°C) VOUT = 3.3V ILOAD = 150mA CIN = 1µF COUT = 1µF VIN = 4.3V 0.5 1.5 2.5 3.5 VIN (V) CIN = 1µF COUT = 1µF VOUT (V) VOUT vs. VIN VOUT = 3.3V ILOAD = 0 3.275 3.280 3.285 3.290 3.295 3.300 3.305 3.310 3.315 3.320 -40 -20 -10 0 20 40 85 125 TEMPERATURE (°C) Output Voltage vs. Temperature VOUT (V) VOUT = 3.3V ILOAD = 10mA CIN = 1µF COUT = 1µF VIN = 4.3V

DS21335B-page 10  2002 Microchip Technology Inc. (Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C) 4.985 4.990 4.995 5.000 5.005 5.010 5.015 5.020 5.025 -40 -20 -10 0 20 40 85 125 Output Voltage vs. Temperature VOUT (V) TEMPERATURE (°C) VOUT = 5V ILOAD = 10mA CIN = 1µF COUT = 1µF VIN = 6V Temperature vs. Quiescent Current -40 -20 -10 0 20 40 85 125 GND CURRENT (µA) TEMPERATURE (°C) VOUT = 5V ILOAD = 10mA CIN = 1µF COUT = 1µF VIN = 6V 4.974 4.976 4.978 4.980 4.982 4.984 4.986 4.988 4.990 4.992 4.994 -40 -20 -10 0 20 40 85 125 Output Voltage vs. Temperature VOUT (V) TEMPERATURE (°C) VOUT = 5V ILOAD = 150mA CIN = 1µF COUT = 1µF VIN = 6V -40 -20 -10 0 20 40 85 125 Temperature vs. Quiescent Current GND CURRENT (µA) TEMPERATURE (°C) VOUT = 5V ILOAD = 150mA CIN = 1µF COUT = 1µF VIN = 6V 10.0 1.0 0.1 0.0 0.01K 0.1K 1K 10K 100K 1000K FREQUENCY (Hz) Output Noise vs. Frequency NOISE (µV/√Hz) RLOAD = 50Ω COUT = 1µF CIN = 1µF CBYP = 0 1000 100 0.1 0.01 0 10 20 30 40 50 60 70 80 90 100 LOAD CURRENT (mA) Stability Region vs. Load Current COUT ESR (Ω) COUT = 1µF to 10µF Stable RegionStable Region -30 -35 -40 -45 -50 -60 -55 -65 -70 -75 -80 0.01K 0.1K 1K 10K 100K 1000K FREQUENCY (Hz) Power Supply Rejection Ratio PSRR (dB) IOUT = 10mA VINDC = 4V VINAC = 100mVp-p VOUT = 3V CIN = 0 COUT = 1µF

 2002 Microchip Technology Inc. DS21335B-page 11 TC1014/TC1015/TC1185 Measure Rise Time of 3.3V LDO With Bypass Capacitor Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 100mA VIN = 4.3V, Temp = 25°C, Rise Time = 448µS VSHDN VOUT Measure Fall Time of 3.3V LDO With Bypass Capacitor Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 50mA VIN = 4.3V, Temp = 25°C, Fall Time = 100µS Measure Rise Time of 3.3V LDO Without Bypass Capacitor Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA VIN = 4.3V, Temp = 25°C, Rise Time = 184µS VSHDN VOUT VOUT VSHDN Measure Fall Time of 3.3V LDO Without Bypass Capacitor Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA VIN = 4.3V, Temp = 25°C, Fall Time = 52µS

DS21335B-page 12  2002 Microchip Technology Inc. Measure Rise Time of 5.0V LDO With Bypass Capacitor Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 100mA VIN = 6V, Temp = 25°C, Rise Time = 390µS VSHDN VOUT VSHDN VOUT Measure Fall Time of 5.0V LDO With Bypass Capacitor Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 50mA VIN = 6V, Temp = 25°C, Fall Time = 167µS Measure Rise Time of 5.0V LDO Without Bypass Capacitor Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA VIN = 6V, Temp = 25°C, Rise Time = 192µS VSHDN VOUT VOUT VSHDN Measure Fall Time of 5.0V LDO Without Bypass Capacitor Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA VIN = 6V, Temp = 25°C, Fall Time = 88µS

 2002 Microchip Technology Inc. DS21335B-page 13 TC1014/TC1015/TC1185 Load Regulation of 3.3V LDO Conditions: CIN = 1µF, COUT = 2.2µF, CBYP = 470pF, VIN = VOUT + 0.25V, Temp = 25°C ILOAD = 50mA switched in at 10kHz, VOUT is AC coupled VOUT ILOAD Load Regulation of 3.3V LDO Conditions: CIN = 1µF, COUT = 2.2µF, CBYP = 470pF, VIN = VOUT + 0.25V, Temp = 25°C ILOAD = 150mA switched in at 10kHz, VOUT is AC coupled VOUT ILOAD Load Regulation of 3.3V LDO Conditions: CIN = 1µF, COUT = 2.2µF, CBYP = 470pF, VIN = VOUT + 0.25V, Temp = 25°C ILOAD = 100mA switched in at 10kHz, VOUT is AC coupled VIN Line Regulation of 3.3V LDO Conditions: VIN = 4V, + 1V Squarewave @2.5kHz CIN = 0µF, COUT = 1µF, CBYP = 470pF, ILOAD = 100mA, VIN & VOUT are AC coupled VOUT

DS21335B-page 14  2002 Microchip Technology Inc. CIN = 0µF, COUT = 1µF, CBYP = 470pF, ILOAD = 100mA, VIN & VOUT are AC coupled Line Regulation of 5.0V LDO Conditions: VIN = 6V, + 1V Squarewave @2.5kHz VIN VOUT VOUT Thermal Shutdown Response of 5.0V LDO Conditions: VIN = 6V, CIN = 0µF, COUT = 1µF ILOAD was increased until temperature of die reached about 160°C, at which time integrated thermal protection circuitry shuts the regulator off when die temperature exceeds approximately 160 °C. The regulator remains off until die temperature drops to approximately 150°C.

 2002 Microchip Technology Inc. DS21335B-page 15 TC1014/TC1015/TC1185

6.0 PACKAGING INFORMATION

6.1 Package Marking Information

“1” & “2” = part number code + temperature range and voltage “3” represents date code “4” represents lot ID number

6.2 Taping Form

(V) TC1014 Code TC1015 Code TC1185 Code

1.8 AY BY NY

2.5 A1 B1 N1

2.6 NB BT NT

2.7 A2 B2 N2

2.8 AZ BZ NZ

2.85 A8 B8 N8

3.0 A3 B3 N3

3.3 A5 B5 N5

3.6 A9 B9 N9

4.0 A0 B0 N0

5.0 A7 B7 N7

Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size 5-Pin SOT-23A 8 mm 4 mm 3000 7 in Carrier Tape, Number of Components Per Reel and Reel Size User Direction of Feed Device Marking PIN 1 Standard Reel Component Orientation TR Suffix Device (Mark Right Side Up) W P

DS21335B-page 16  2002 Microchip Technology Inc.

6.3 Package Dimensions

.071 (1.80) .059 (1.50) .122 (3.10) .098 (2.50) .075 (1.90) REF. .020 (0.50) .012 (0.30) PIN 1 .037 (0.95) REF. .122 (3.10) .106 (2.70) .057 (1.45) .035 (0.90) .006 (0.15) .000 (0.00) .024 (0.60) .004 (0.10) .004 (0.09) SOT-23A-5 Dimensions: inches (mm)

 2002 Microchip Technology Inc. DS21335B-page17 TC1014/TC1015/TC1185 Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom- mended workarounds. T o determine if an errata sheet exists for a particular device, please contact one of the following: 1. Your local Microchip sales office 2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 3. The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.

DS21335B-page18  2002 Microchip Technology Inc. NOTES:

 2002 Microchip Technology Inc. DS21335B-page 19 TC1014/TC1015/TC1185 Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip T echnology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical com- ponents in life support systems is not authorized except with express written approval by Microchip. No licenses are con- veyed, implicitly or otherwise, under any intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, FilterLab, K EELOQ,m i c r o I D ,M P L A B ,P I C ,P I C m i c r o ,P I C M A S T E R , PICSTART, PRO MATE, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Tech- nology Incorporated in the U.S.A. and other countries. dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, MXDEV, MXLAB, PICC, PICDEM, PICDEM.net, rfPIC, Select Mode and T otal Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2002, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company’s quality system processes and procedures are QS-9000 compliant for its PICmicro ® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001 certified.

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Mississauga, Ontario L4V 1X5, Canada Tel: 905-673-0699 Fax: 905-673-6509 ASIA/PACIFIC Australia Microchip Technology Australia Pty Ltd Suite 22, 41 Rawson Street Epping 2121, NSW Australia Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 China - Beijing Microchip Technology Consulting (Shanghai) Co., Ltd., Beijing Liaison Office Unit 915 Bei Hai Wan Tai Bldg. No. 6 Chaoyangmen Beidajie Beijing, 100027, No. China Tel: 86-10-85282100 Fax: 86-10-85282104 China - Chengdu Microchip Technology Consulting (Shanghai) Co., Ltd., Chengdu Liaison Office Rm. 2401, 24th Floor, Ming Xing Financial Tower No. 88 TIDU Street Chengdu 610016, China Tel: 86-28-86766200 Fax: 86-28-86766599 China - Fuzhou Microchip Technology Consulting (Shanghai) Co., Ltd., Fuzhou Liaison Office Unit 28F, World Trade Plaza No. 71 Wusi Road Fuzhou 350001, China Tel: 86-591-7503506 Fax: 86-591-7503521 China - Shanghai Microchip Technology Consulting (Shanghai) Co., Ltd. Room 701, Bldg. B Far East International Plaza No. 317 Xian Xia Road Shanghai, 200051 Tel: 86-21-6275-5700 Fax: 86-21-6275-5060 China - Shenzhen Microchip Technology Consulting (Shanghai) Co., Ltd., Shenzhen Liaison Office Rm. 1315, 13/F, Shenzhen Kerry Centre, Renminnan Lu Shenzhen 518001, China Tel: 86-755-2350361 Fax: 86-755-2366086 China - Hong Kong SAR Microchip Technology Hongkong Ltd. Unit 901-6, Tower 2, Metroplaza

223 Hing Fong Road

Kwai Fong, N.T., Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 India Microchip Technology Inc. India Liaison Office Divyasree Chambers

1 Floor, Wing A (A3/A4)

No. 11, O’Shaugnessey Road Bangalore, 560 025, India Tel: 91-80-2290061 Fax: 91-80-2290062 Japan Microchip Technology Japan K.K. Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Korea Microchip Technology Korea 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku Seoul, Korea 135-882 Tel: 82-2-554-7200 Fax: 82-2-558-5934 Singapore Microchip Technology Singapore Pte Ltd.

200 Middle Road

#07-02 Prime Centre Singapore, 188980 Tel: 65-6334-8870 Fax: 65-6334-8850 Taiwan Microchip Technology Taiwan 11F-3, No. 207 Tung Hua North Road Taipei, 105, Taiwan Tel: 886-2-2717-7175 Fax: 886-2-2545-0139 EUROPE Denmark Microchip Technology Nordic ApS Regus Business Centre Lautrup hoj 1-3 Ballerup DK-2750 Denmark Tel: 45 4420 9895 Fax: 45 4420 9910 France Microchip Technology SARL Parc d’Activite du Moulin de Massy

43 Rue du Saule Trapu

91300 Massy, France

D-81739 Munich, Germany Tel: 49-89-627-144 0 Fax: 49-89-627-144-44 Italy Microchip Technology SRL Centro Direzionale Colleoni Palazzo Taurus 1 V. Le Colleoni 1

20041 Agrate Brianza

Milan, Italy Tel: 39-039-65791-1 Fax: 39-039-6899883 United Kingdom Microchip Ltd.

505 Eskdale Road

Berkshire, England RG41 5TU Tel: 44 118 921 5869 Fax: 44-118 921-5820 05/01/02 *D S2 13 35 B* WORLDWIDE SALES AND SERVICE