TBR20L100CT SHUNYE | Alldatasheet

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Package outline Dimensions in millimeters LOW VF Schoky Barrier Recfiers TO-220AB PIN 1 PIN 3 PIN 2 & (case) Ø 3.84± 0.15 2.74 0.15 10.0± 0.2 15.25 0.3 1.3± 0.2 0.8± 0.2 2.54± 0.1 13.6 0.3 9.0 0.2 1.27± 0.10 4.5± 0.2 2.5± 0.2 0.38± 0.10 PIN1 PIN3 PIN2 PIN2 Ultra low vf High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Low stored charge majority carrier conduction TBR20L100CT series Ø 2.3 ± 51.0 10.16± 0.2 3.3 51.0 58.51 3.0 1.31 3.0 1.3± 0.2 0.8± 0.2 2.54± 0.1 0.5± 0.1 2.35± 0.2 4.7± 0.2 2.55± 0.2 86.6 2.0 （0.7） ITO-220AB PIN1 PIN3PIN2 TO-263(D PAK) 2 10.2 0.2 10± 0.2 6.7± 0.3 1.3± 0.2 1.3± 0.2 0.8± 0.2 5.08± 0.2 1.1 0.20 º º 4.6± 0.2 1.27± 0.1 2.5± 0.2 2.1 0.2 0-0.25 0.2 0.38± 0.1 0~5 º 4.8 0.3 2.5 0.2 PIN1 PIN3 PIN2 TBR20L100CT TBR20L100FCT TBR20L100DCT 10± 0.2 6.7± 0.3 º º 10.2 0.2 1.3± 0.2 0.8± 0.2 13.4 0.3 2.54± 0.1 0.38± 0.1 2.5± 0.2 0.2 4.6± 0.2 1.27± 0.1 PIN1 PIN3PIN2 PIN2 TO-262 TBR20L100WCT Mechanical Data Leads: Polarity: Mounting torque: Terminals: Weight: as marked Solderable per mil-std-202, Method 208 5 in-lbs maximum Puretin plated TO-220AB 1.85 grams ITO-220AB 1.70 grams TO-262AB 1.40 grams TO-263(D PAK) 1.35 grams2 Circuit figure: Common cathode REVERSE VOLTAGE - 100 Volts FORWARD CURRENT - 20.0 Amperes www.shunyegroup.com.cn

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Breakdown voltage per diode V BR I R =0.5mA 300 - - V Instantaneous forward voltage per diode V F I F =5A - 0.52 V I F =10A T J =25 º C - 0.67 I F =15A - 0.76 I F =5A - 0.48 V I F =10A T J =100 º C - 0.62 I F =15A - 0.70 Reverse current per diode I R V R =70V T J =25 º C - 10 uA T J =100 º C - - mA V R =100V T J =25 º C - 15 50 uA T J =100 º C - 10 mA RATINGS SYMBOL TBR20L100CT TBR20L100FCT TBR20L100WCT TBR20L100DCT UNIT Maximum repeve reverse voltage V RRM 100 V Maximum RMS voltage V RMS V Maximum average forward current per device I AV A per diode 10 Peak forward surge current,8.3ms single half sine-wave superimposed on rated load per leg I FSM 200 A Typical thermal resistance per diode(Note 1) R θ-JC 2.0 4.5 2.5 2.5 ℃/W Operang juncon temperature range T J -55 to +125 Storage temperature range T STG -55 to +150 ELECTRICAL CHARACTERISTICS(TA=25 MAXIMUM RATINGS(TA=25 Maximum DC blocking voltage 100 Notes: 1. Thermal resistance from junction to case. 0.55 0.70 0.79 0.51 0.65 0.73 www.shunyegroup.com.cn

FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE CASE TEMPERATURE, ( C ) 0 20 40 60 80 100 120 140 160 180 FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT )A( ,TNERRUC EGRUS DRAWROF KAEP NUMBER OF CYCLES AT 60Hz 250 200 150 100 FIG. 3 - TYPICAL REVERSE CHARACTERISTICS )Am( ,TNERRUC ESREVER SUOENATNATSNI PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS )A( ,TNERRUC DRAWROF SUOENATNATSNI INSTANTANEOUS FORWARD VOLTAGE, (V) AVERAGE FORWARD CURRENT, (A) 1 5 10 20 50 100 T J =25 C° 8.3ms Single Half Sine Wave JEDEC method .01 0 20 40 60 80 100 120 T J =75 C T J =25 C 0.1 100 .001 T J =100 C www.shunyegroup.com.cn