TBR15M100HT FUTUREWAFER | Alldatasheet
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Trench MOS Barrier Schottky Rectifier Document Number: F21937M 15-OCT-2021 V 2.1 www.futurewafer.com.tw 1. Synopsis 1-1. General Description This TBR15M100HT are Trench MOS Barrier Schottky Rectifier (TBR) Provides Fast Switching Performance in a Compact Thermally Efficient Package. The TO-277B Package Provides an Excellent Alternative to the DPAK, Offering Thermal Performance Nearly as Good in a Package Occupying Less Than Half the Board Space. Its Low Profile Makes it a Good Option For Flat Panel Display and Other Applications With Limited Vertical Clearance. The Device Offers Low Leakage Over Temperature Making it a Good Match For Applications Requiring Low Quiescent Current. 1-2. Feature List
- Trench MOS Barrier Schottky Technology
- Low Forward Voltage Drop
- 1 00-Volts Reverse
- High Frequency Operation 1-3. Applications
- Switch Mode Power Supply
- Power Factor Correction
- Solar Inverter
- Uninterruptible Power Supply
- High Efficiency DC/DC Converters
- Motor Drivers 1-4. Benefits
- Essentially No Switching Losses
- Higher Efficiency
- Reduction Of Heat Sink Requirements
- Parallel Devices Without Thermal Runaway
- Higher System Reliability Due To Lower Operating Temperatures 1-5. Mechanical Characteristics
- Molded JEDEC Pa ckage: TO-277B
- Packing: Tape and Reel
- Flammability rating UL 94V -0
- Halogen Free
- JEDEC MSL Classification: Level 1 TO-277B
Trench MOS Barrier Schottky Rectifier Document Number: F21937M 15-OCT-2021 V 2.1 www.futurewafer.com.tw 2. Contents
Trench MOS Barrier Schottky Rectifier Document Number: F21937M 15-OCT-2021 V 2.1 www.futurewafer.com.tw 3. Electrical Property 3-1. Absolute Maximum Ratings 3-2. Electrical Characteristics 3-3. Thermal Characteristics
Trench MOS Barrier Schottky Rectifier Document Number: F21937M 15-OCT-2021 V 2.1 www.futurewafer.com.tw 3-4. Ratings and Characteristics Curve Fig 2. Typical Instantaneous Forward Characteristics Instantaneous Forward Voltage, VF (V) TJ=25°C TJ=125°C TJ=100°C TJ=150°C Percent of Rated Peak Reverse Voltage, VR (%) Instantaneous Reverse Current (mA) Fig 3. Typical Reverse Current Characteristics TJ=25°C TJ=125°C TJ=100°C TJ=150°C Fig 4. Typical Junction Capacitance Reverse Voltage, VR (V) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Fig 6. Typical Transient Thermal Impedance t - Pulse Duration (s) Junction To Ambient RthJM = 3 °C/W TM measured at cathode terminal mount typical values RthJA = 110 °C/W Fig 1. Maximum Forward Current Derating Curve TM - Mount Temperature (°C) Average Forward Rectified Current (A) Fig 5. Forward Power Loss Characteristics Average Forward Current (A) Average Power Loss (W) D=0.1 D=0.2 D=0.3 D=0.5 D=0.8 D=1.0 Instantaneous Forward Current (A) Junction Capacitance (pF) Transient Thermal Impedance (°C/W)
Trench MOS Barrier Schottky Rectifier Document Number: F21937M 15-OCT-2021 V 2.1 www.futurewafer.com.tw 4. Soldering Parameters
Trench MOS Barrier Schottky Rectifier Document Number: F21937M 15-OCT-2021 V 2.1 www.futurewafer.com.tw 5. Package Information 5-1. Dimension 5-2. PCB Pad Layout Recommendation Unit:mm Unit:mm
Trench MOS Barrier Schottky Rectifier Document Number: F21937M 15-OCT-2021 V 2.1 www.futurewafer.com.tw 6. Packing 6-1. Taping and Reel Specification 6-2. Embossed Carrier Tape Specification Direction Of Feed
Trench MOS Barrier Schottky Rectifier Document Number: F21937M 15-OCT-2021 V 2.1 www.futurewafer.com.tw 6-3. Surface Mount Reel Specification 6-4. Tape Leader and Trailer Specification Unit:mm
Trench MOS Barrier Schottky Rectifier Document Number: F21937M 15-OCT-2021 V 2.1 www.futurewafer.com.tw 7. Ordering Information 8. Version 8-1. History 8-2. Company Profile Futurewafer Technology Co.,Ltd 台灣未來芯科技股份有限公司 TEL: +886-3-3350161 / FAX: +886-3-3350172 cherry@futurewafer.com.tw No. 286-11F, Sec. 3, Sanmin Rd., Taoyuan Dist., Taoyuan City 330, Taiwan