TBR05L120A FUTUREWAFER | Alldatasheet
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Trench MOS Barrier Schottky Rectifier Document Number: F22037Z 05-OCT-2021 V 2.1 www.futurewafer.com.tw 1. Synopsis 1-1. General Description This TBR05L120 Series are Trench MOS Barrier Schottky Rectifier (TBR) Provides Fast Switching Performance in a Compact Thermally Efficient Package. Its Low Profile Makes it a Good Option For Flat Panel Display and Other Applications With Limited Vertical Clearance. The Device Offers Low Leakage Over Temperature Making it a Good Match For Applications Requiring Low Quiescent Current. 1-2. Feature List
- Trench MOS Barrier Schottky Technology
- Low Forward Voltage Drop
- 120-Volts Reverse
- High Frequency Operation 1-3. Applications
- Switch Mode Power Supply
- Power Factor Correction
- Solar Inverter
- Uninterruptible Power Supply
- High Efficiency DC/DC Converters
- Motor Drivers 1-4. Benefits
- Essentially No Switching Losses
- Higher Efficiency
- Reduction Of Heat Sink Requirements
- Parallel Devices Without Thermal Runaway
- Higher System Reliability Due To Lower Operating Temperatures 1-5. Mechanical Characteristics
- Molded JEDEC Package : - SMAJ / SMAF - SMBJ / SMBF - SMCJ - TO277B
- Packing: Tape and Reel
- Flammability rating UL 94V -0
- Halogen Free
- JEDEC MSL Classification: Level 1 Cathode Anode SMAJ SMAF SMBJ SMBF SMCJ TO277B
Trench MOS Barrier Schottky Rectifier Document Number: F22037Z 05-OCT-2021 V 2.1 www.futurewafer.com.tw 2. Contents
Trench MOS Barrier Schottky Rectifier Document Number: F22037Z 05-OCT-2021 V 2.1 www.futurewafer.com.tw 3. Electrical Property 3-1. Absolute Maximum Ratings Notes: (1) Measured on 8.3ms signal half sine wave or equivalent square wave, duty cycle=4 per minute maximum. 3-2. Electrical Characteristics 3-3. Thermal Characteristics
Trench MOS Barrier Schottky Rectifier Document Number: F22037Z 05-OCT-2021 V 2.1 www.futurewafer.com.tw 3-4. Ratings and Characteristics Curve D=0.1 D=0.2 D=0.3 D=0.5 D=0.8 D=1.0 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Fig 2. Typical Instantaneous Forward Characteristics Instantaneous Forward Voltage, VF (V) TJ=25°C TJ=125°C TJ=100°C TJ=150°C Percent of Rated Peak Reverse Voltage, VR (%) Fig 3. Typical Reverse Current Characteristics TJ=25°C TJ=125°C TJ=100°C TJ=150°C Fig 4. Typical Junction Capacitance Reverse Voltage, VR (V) t - Pulse Duration (s) Junction To Ambient Fig 1. Maximum Forward Current Derating Curve TM - Mount Temperature (°C) Average Forward Rectified Current (A) Fig 5. Forward Power Loss Characteristics Average Forward Current (A) Average Power Loss (W) TM = 125°C TA = 25°C Instantaneous Reverse Current (mA) Transient Thermal Impedance (°C/W) Junction Capacitance (pF) Instantaneous Forward Current (A) Fig 6. Typical Transient Thermal Impedance TM measured at cathode terminal mount typical values
Trench MOS Barrier Schottky Rectifier Document Number: F22037Z 05-OCT-2021 V 2.1 www.futurewafer.com.tw 4. Soldering Parameters
Trench MOS Barrier Schottky Rectifier Document Number: F22037Z 05-OCT-2021 V 2.1 www.futurewafer.com.tw 5. Package Information 5-1. Dimension-SMAJ 5-2. PCB Pad Layout Recommendation-SMAJ Unit:mm Unit:mm
Trench MOS Barrier Schottky Rectifier Document Number: F22037Z 05-OCT-2021 V 2.1 www.futurewafer.com.tw 5-3. Dimension-SMAF 5-4. PCB Pad Layout Recommendation-SMAF Unit:mm Unit:mm
Trench MOS Barrier Schottky Rectifier Document Number: F22037Z 05-OCT-2021 V 2.1 www.futurewafer.com.tw 5-5. Dimension-SMBJ 5-6. PCB Pad Layout Recommendation-SMBJ Unit:mm Unit:mm
Trench MOS Barrier Schottky Rectifier Document Number: F22037Z 05-OCT-2021 V 2.1 www.futurewafer.com.tw 5-7. Dimension-SMBF 5-8. PCB Pad Layout Recommendation-SMBF Unit:mm Unit:mm
Trench MOS Barrier Schottky Rectifier Document Number: F22037Z 05-OCT-2021 V 2.1 www.futurewafer.com.tw 5-9. Dimension-SMCJ 5-10. PCB Pad Layout Recommendation-SMCJ Unit:mm Unit:mm
Trench MOS Barrier Schottky Rectifier Document Number: F22037Z 05-OCT-2021 V 2.1 www.futurewafer.com.tw 5-11. Dimension-TO277B 5-12. PCB Pad Layout Recommendation-TO277B Unit:mm Unit:mm
Trench MOS Barrier Schottky Rectifier Document Number: F22037Z 05-OCT-2021 V 2.1 www.futurewafer.com.tw 6. Packing 6-1. Taping and Reel Specification-SMAJ & SMAF Taping Width Tape Orientation 12mm 6-2. Embossed Carrier Tape Specification-SMAJ & SMAF Direction Of Feed Unit:mm
Trench MOS Barrier Schottky Rectifier Document Number: F22037Z 05-OCT-2021 V 2.1 www.futurewafer.com.tw 6-3. Taping and Reel Specification-SMBJ & SMBF Taping Width Tape Orientation 12mm 6-4. Embossed Carrier Tape Specification-SMBJ & SMBF Unit:mm Direction Of Feed
Trench MOS Barrier Schottky Rectifier Document Number: F22037Z 05-OCT-2021 V 2.1 www.futurewafer.com.tw 6-5. Taping and Reel Specification-SMCJ Taping Width Tape Orientation 16mm 6-6. Embossed Carrier Tape Specification-SMCJ Direction Of Feed Unit:mm
Trench MOS Barrier Schottky Rectifier Document Number: F22037Z 05-OCT-2021 V 2.1 www.futurewafer.com.tw 6-7. Taping and Reel Specification-TO277B 6-8. Embossed Carrier Tape Specification-TO277B Direction Of Feed
Trench MOS Barrier Schottky Rectifier Document Number: F22037Z 05-OCT-2021 V 2.1 www.futurewafer.com.tw 6-9. Surface Mount Reel Specification-SMAJ & SMAF & SMBJ & SMBF & TO277B 6-10. Tape Leader and Trailer Specification-SMAJ & SMAF & SMBJ & SMBF & TO277B Unit:mm
Trench MOS Barrier Schottky Rectifier Document Number: F22037Z 05-OCT-2021 V 2.1 www.futurewafer.com.tw 6-11. Surface Mount Reel Specification-SMCJ 6-12. Tape Leader and Trailer Specification-SMCJ Unit:mm
Trench MOS Barrier Schottky Rectifier Document Number: F22037Z 05-OCT-2021 V 2.1 www.futurewafer.com.tw 7. Ordering Information 8. Version 8-1. History 8-2. Company Profile Futurewafer Technology Co.,Ltd 台灣未來芯科技股份有限公司 TEL: +886-3-3350161 / FAX: +886-3-3350172 cherry@futurewafer.com.tw No. 286-11F, Sec. 3, Sanmin Rd., Taoyuan Dist., Taoyuan City 330, Taiwan