TBN6301E

TBN6301 AUK | Alldatasheet

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Technical content

□ Features - High gain bandwidth product fT = 6 GHz at VCE = 3 V, IC = 10 mA fT = 7.5 GHz at VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz □ Applications - VHF and UHF wide band amplifier □ Absolute Maximum Ratings (TA = 25 ℃) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Operating Junction Temperature Storage Temperature 150 ℃ IC 75 mA mW Unit BVCBO 20 V Parameter Symbol Ptot 150 Ratings ℃Tstg -65 ~ 150 V BVEBO 3 V BVCEO 8 Tj Caution : Electro Static Discharge sensitive device SOT-323 Pin Configuration 1. Base 2. Emitter 3. Collector Unit in mm 2.1±0.1 1.25±0.05 1.30±0.1 2.0±0.2 0.30±0.1 0.90±0.1 0~0.1 0.1 Min. 0.15±0.05 TBN6301 Series Si NPN TransistorSemiconductor

□ Electrical Characteristics (TA = 25 ℃) dB97VCE = 3 V, IC = 10 mA, f = 1 GHz|S21|2Insertion Power Gain GHz7.56VCE = 5 V, IC = 20 mA 25080VCE = 3 V, IC = 10 mAhFEDC Current Gain GHz65VCE = 3 V, IC = 10 mAfTGain Bandwidth Product dB9.57VCE = 5 V, IC = 20 mA, f = 1 GHz 1.81.4VCE = 3 V, IC = 10 mA, f = 1 GHzNFNoise Figure ㎂0.5VCB = 15 V, IE = 0 mAICBOCollector Cut-off Current ㎂10VCE = 8 V, IB = 0 mAICEO ㎂0.5VEB = 2 V, IC = 0 mAIEBOEmitter Cut-off Current 1.1 Typ. Max. pFVCB = 3 V, IE = 0 mA, f = 1 MHzCreReverse Transfer Capacitance UnitMin.Test ConditionsSymbolParameter □ hFE Classification 125 - 25080 - 160hFE Value SB1SB2Marking □ Available Package Unit in mm 1.6 ⅹ 0.8, 0.8tSOT-523TBN6301E 2.0 ⅹ 1.25, 1.0tSOT-323TBN6301U DimensionPackageProduct TBN6301 Series

□ Typical Characteristics ( TA = 25 ℃, unless otherwise specified) 0 25 50 75 100 125 150 100 150 200 Collector Power Dissipation, PC (mW) Ambient Temperature, TA ( o Power Dissipation vs. Ambient Temperature DC Current Gain vs. Collector Current Collector Current vs. Base to Emitter Voltage 01234567 0.8 1.0 1.2 1.4 f = 1 MHz Reverse Transfer Capacitance, Cre (pF) Collector to Base Voltage, VCB (V) Reverse Transfer Capacitance vs. Collector to Base Voltage 0.1 1 10 100 100 150 200 250 300 350 400 VCE = 3 V DC Current Gain, hFE Collector Current, IC (mA) VCE = 3 V Collector Current, IC (mA) Base to Emitter Voltage, VBE (V) TBN6301 Series

Base Current, Collector Current vs. Base to Emitter Voltage Gain Bandwidth Product vs. Collector Current Insertion Power Gain vs. Frequency Collector Current vs. Collector to Emitter Voltage VCE = 3 V Base Current, IB or Collector Current, IC (A) Base to Emitter Voltage, VBE (V) 0123456 IB Step = 50 µA Collector Current, IC (mA) Collector to Emitter Voltage, VCE (V) 0.1 1 VCE = 3 V IC = 10 mA Insertion Power Gain, |S21| (dB) Frequency (GHz) 11 0 1 0 0 Gain Bandwidth Product, fT (GHz) Collector Current, IC (mA) VCE = 3 V VCE = 5 V VCE = 7 V TBN6301 Series

vs. Collector Current Maximum Available Gain vs. Collector Current 1 10 100 Insertion Power Gain, |S21| (dB) Collector Current, IC (mA) VCE = 3 V VCE = 5 V VCE = 7 V f = 1 GHz 11 0 1 0 0 Maximum Available Gain, MAG (dB) Collector Current, IC (mA) VCE = 3 V VCE = 5 V VCE = 7 V f = 1 GHz TBN6301 Series

□ Dimensions of TBN6301E in mm CollectorC3 EmitterE2 BaseB1 DescriptionSymbolPin No. Pin Configuration TBN6301 Series