TBN4226 AUK | Alldatasheet

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□ Features - High gain bandwidth product fT = 6 GHz at VCE = 3 V, IC = 7 mA fT = 8 GHz at VCE = 3 V, IC = 30 mA - High power gain |S21|2 = 9.0 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz - Low noise figure NF = 1.2 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz □ Applications - VHF and UHF low noise amplifier - Wide band amplifier □ Absolute Maximum Ratings (TA = 25 ℃) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Operating Junction Temperature Storage Temperature ℃Tstg -65 ~ 150 V BVEBO 3 V BVCEO 8 Tj Parameter Symbol Ptot 150 Ratings Unit BVCBO 20 V 150 ℃ IC 100 mA mW Caution : Electro Static Discharge sensitive device SOT-323 Pin Configuration 1. Base 2. Emitter 3. Collector Unit in mm 2.1±0.1 1.25±0.05 1.30±0.1 2.0±0.2 0.30±0.1 0.90±0.1 0~0.1 0.1 Min. 0.15±0.05 Semiconductor TBN4226 Series Si NPN Transistor

□ Electrical Characteristics (TA = 25 ℃) dB-9.07.0VCE = 3 V, IC = 7 mA, f = 1 GHz|S21|2Insertion Power Gain 25010070VCE = 3 V, IC = 7 mAhFEDC Current Gain GHz-6.04.0VCE = 3 V, IC = 7 mAfTGain Bandwidth Product dB2.01.2-VCE = 3 V, IC = 7 mA, f = 1 GHzNFNoise Figure ㎂0.5--VCB = 15 V, IE = 0 mAICBOCollector Cut-off Current ㎂0.5--VEB = 2 V, IC = 0 mAIEBOEmitter Cut-off Current 0.9 Typ. 1.4 Max. pF-VCB = 3 V, IE = 0 mA, f = 1 MHzCreReverse Transfer Capacitance UnitMin.Test ConditionsSymbolParameter □ hFE Classification 125 - 25070 - 140hFE Value SM1SM2Marking □ Available Package Unit in mm 1.6 ⅹ 0.8, 0.8tSOT-523TBN4226E 1.4 ⅹ 0.8, 0.6tSOT-623FTBN4226KF 2.0 ⅹ 1.25, 1.0tSOT-323TBN4226U 2.9 ⅹ 1.3, 1.2tSOT-23TBN4226S DimensionPackageProduct TBN4226 Series

□ Typical Characteristics ( TA = 25 ℃, unless otherwise specified) Total Power Dissipation vs. Ambient Temperature DC Current Gain vs. Collector Current Collector Current vs. Base to Emitter Voltage Reverse Transfer Capacitance vs. Collector to Base Voltage 02468 1 0 1 2 0.4 0.6 0.8 1.0 1.2 1.4 f = 1 MHz Reverse Transfer Capacitance, Cre (pF) Collector to Base Voltage, VCB (V) 0 25 50 75 100 125 150 100 150 200 250 Free Air Total Power Dissipation, Ptot (mW) Ambient Temperature, TA ( o 0.1 1 10 100 100 150 200 VCE = 3 V DC Current Gain, hFE Collector Current, IC (mA) VCE = 3 V Collector Current, IC (mA) Base to Emitter Voltage, VBE (V) TBN4226 Series

vs. Collector Current Collector Current vs. Collector to Emitter Voltage 11 0 1 0 0 Gain Bandwidth Product, fT (GHz) Collector Current, IC (mA) VCE = 3 V Insertion Power Gain vs. Collector Current Insertion Power Gain vs. Frequency 0.1 1 10 VCE = 3 V IC = 7 mA Insertion Power Gain, |S21| (dB) Frequency (GHz) 01234567 IB Step = 100 µA Collector Current, IC (mA) Collector to Emitter Voltage, VCE (V) 11 0 1 0 0 Insertion Power Gain, |S21| (dB) Collector Current, IC (mA) VCE = 3 V f = 1 GHz TBN4226 Series

vs. Collector Current Maximum Available Gain vs. Collector Current Mag Phase Association gain (dB) G max (dB) Frequency (GHz) Fmin (dB) rn Γopt 1 10 100 Maximum Available Gain, MAG (dB) Collector Current, IC (mA) VCE = 3 V f = 1GHz 0.1 1 10 100 VCE = 3 V f = 1 GHz Noise Figure, NF (dB) Collector Current, IC (mA) Noise Parameter vs. Frequency TBN4226 Series

1.2 0.8 0.9 1.4 0.2 0.6 0~0.1 0.11 SOT-623F □ Dimensions of TBN4226KF in mm □ Dimensions of TBN4226S in mm □ Dimensions of TBN4226E in mm CollectorC3 EmitterE2 BaseB1 DescriptionSymbolPin No. Pin Configuration (SOT-23, SOT-523, SOT-623F) TBN4226 Series