TBA820M TGS | Alldatasheet

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Technical content

1.2W AUDIO POWER AMPLIFIER TBA820M GENERAL DESCRIPTION The TBA820M is a monolithic integrated circuit in 8 lead dual in-line plastic package. It is intended for use aslow frequency class B power amplifier in portable cassette players and radios. FEA TURES z Wide rang e of sup ply volta ge : Vcc=3V~ 16V in portable ra dios, c asset te recorder s and playe rs etc. Main features are : m inim um working suppl y voltage of 3V Outline Drawing z Low quiescent supply current ( Icc=4m A , ty pical) z Good ripple rejection z Low num ber of external com ponents z No crossover distortion z Low power dissipation Output Power : Po=2W at 12V/8 Ω , 1.6W at 9V/4 Ω and 1.2W at 9V/8 Ω BLOCK DIAGRAM P IN CONNECTION 8 7 6 5 4321 Ripple Bootstrap Vcc OUTPUT GNDINPUTNFCB 4 5 8Frequency Gain Setting Input Ground Ripple Bootstrap Supply Output TBA820M Compensation Voltage Rejection TIGER ELECTRONIC CO.,LTD

Characteristics Symbol Value Unit Supply V oltage Vcc 16 V Peak Output Current Ipk 1.5 A Power Dissipation(at Tamb=50 °C) PD 1.25 W Operating Temperature Topr -20~70 °C Storage Temperature Tstg -40~150 °C THERMAL DATA Characteristics Symbol Value Unit Thermal resistance junction-ambient Rth(j-a) 100 °C/W

ELECTRICAL CHARACTERISTICS

(Unless otherwise specified Vcc=9V ,Tamb=25 °C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Supply V oltage Vcc 3 16 V Quiescent Output V oltage(pin 5) V o 4 4.5 5 V Quiescent Drain Current Id 4 12 mA Bias current (pin 3) Ib 0.1 µA Vcc=12V;R L =8 Ω 2 Vcc=9V;R L =4 Ω 1.6 Vcc=9V;R L =8 Ω 0.9 1.2 Vcc=6V;R L =4 Ω 0.75 Vcc=3.5V;R L =4 Ω 0.25 Output Power Po THD=10% f=1kHz Rf=120Ω Vcc=3V;R L =4 Ω 0.2 W Rf=33 Ω 16 Po=1.2W R L =8 Ω f=1kHz Rf=120Ω 60 mV Rf=33 Ω 3.5 Input sensitivity Vi(rms) Po=50mW R L =8 Ω f=1kHz Rf=120Ω 12 mV Input resistance(pin 3) Ri f=1kHz 5 MΩ CB =680pF 25 to 7000 Frequency response (-3dB) B RL =8 Ω Rf=120Ω C5=1000µ F CB =220pF 25 to 20000 Hz

ELECTRICAL CHARACTERISTIVCS (Unless otherwise specified Vcc=9V ,T am b=25 °C) Continue Characteristic Symbol Test Condition Min . Typ. Max. Unit Rf=33 Ω 0.8 Distortion THD Po=500 mW R L =8 Ω f=1kHz Rf=120 Ω 0.4 Voltage Gain (open loop) Gv RL =8 Ω f=1kHz 75 dB Rf=33 Ω 45 Voltage Gain (closed loop) Gv RL =8 Ω f=1kHz Rf=120 Ω 34 dB Input noise Voltage VN Vcc=9V ,B(-3dB)=25~20000Hz 3 µA Input noise current IN Vcc=9V ,B(-3dB)=25~20000Hz 0.4 nA R1=10k Ω 80 Signal to noise ratio (*) S+N/N Po=1.2W R L =8 Ω Gv=34dB R1=50k Ω 70 dB Supply voltage rejection (test circuit of 2) SVR RL =8 Ω f(ripple)=100Hz C6=47 µF Rf=120 Ω 42 dB TEST CIRCUIT 1. Cir cuit diagram w ith load connected to the supply voltage 7 CB 220uF/15V 0.22uF Rf 100uF/6V 10K 47uF/10V 0.1uF 100uF/15V Vi Vcc RL TBA820M

  1. Cir cuit diagram w ith load connected to gr ound 7 CB 220uF/15V 0.22uF Rf 100uF/6V 10K C6 47uF/10V 0.1uF 100uF/15V Vi Vcc RL TBA820M 100uF/15V CHARACTERISTICS CUR VES