TB7102AFTE85L

TB7102AF TOSHIBA | Alldatasheet

Document overview

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Technical content

Features

• Enables up to 1 A of load current (IOUT) with a minimum of external components.
• High efficiency (η = 95% typ.) (@VIN = 5 V, VOUT = 3.3 V and IOUT = 300 mA)
• Operating voltage (VIN) range: 2.7 V to 5.5 V
• A high 1-MHz oscillation frequency (typ.) allows the use of small external components.
• Uses internal phase compensation to achieve high efficiency with a minimum of external components.
• Allows the use of a small surface-mount ceramic capacitor as an output filter capacitor.
• Enable threshold voltage : VIH(EN) = 1.5 V, VIL(EN) = 0.5 V(@VIN = 5 V)
• Housed in a small surface-mount package (PS-8) with low thermal resistance.
• Undervoltage lockout (UVLO), thermal shutdown (TSD) and overcurrent protection (OCP) Part Marking Pin Assignment This product has a MOS structure and is sensitive to electrostatic discharge. Handle with care. The product(s) in this document (“Product”) contain functions intended to protect the Product from temporary small overloads such as minor short-term overcurrent, or overheating. The protective functions do not necessarily protect Product under all circumstances. When incorporating Product into your system, please design the system (1) to avoid such overloads upon the Product, and (2) to shut down or otherwise relieve the Product of such overload conditions immediately upon occurrence. For details, please refer to the notes appearing below in this document and other documents referenced in this document. Weight: 0.017 g (typ.) N.C. VFB N.C. PGND VIN EN SGND LX Part Number (Abbrev.) 7 1 0 2A Lot No. The dot (•) on the top surface indicates pin 1. *: The lot number consists of three digits. The first digit represents the last di git of the year of manufacture, and the following two digits indicates the week of manufacture between 01 and either 52 or 53. Manufacturing week code (The first week of the year is 01; the last week is 52 or 53.) Manufacturing year code (last digit of the year of manufacture)

Ordering Information

TB7102AF (TE85L, F) Embossed tape (3000 units per reel) Block Diagram Pin Description Pin No. Symbol Description

1 PGND Ground for the output section

2 V IN Input pin

This pin is placed in the standby state if VEN = low. Standby current is 1 μA or less. 3 EN Enable pin When EN ≥ 1.5 V (@V IN = 5 V), the control logic is allowed to operate and thus enable the switching operation of the output section.

4 SGND Ground for the control logic

5 N.C. No-connect 6 N.C. No-connect

7 V FB Feedback pin

This input is fed into an internal error amplifier with a reference voltage of 0.8 V (typ.).

8 L X Switch pin

This output is connected to the high-side P-channel MOSFETs and low-side N-channel MOSFET. 0.8 V (typ.) EN Control logic Phase compensation Thermal shutdown Undervoltage lockout & soft-start reference voltage VFB Error amplifier VCOMP PWM comparator Slope compensation Oscillator Driver Current detection Driver PGND LX VIN SGND

T OSC: Internal oscillator output signal IOUT: Converter output current VOUT: Converter output voltage VCOMP: Output voltage of error amplifier IL: Inductor current VLX: Switch pin voltage

Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN −0.3 to 6 V Enable pin voltage VEN −0.3 to 6 V VEN−VIN voltage difference VEN − VIN V EN − VIN < 0.3 V Feedback pin voltage VFB −0.3 to 6 V Switch pin voltage VLX −0.3 to 6 V Switch pin current ILX ±1.3 A Power dissipation (Note 1) P D 0.7 W Operating junction temperature Tjopr −40 to 125 °C Junction temperature (Note 2) T j 150 °C Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) Thermal Resistance Characteristics Characteristics Symbol Max Unit Thermal resistance, junction to ambient R th (j-a) 178.6 (Note 1) °C/W Note 1: Note 2: The TB7102AF may go into thermal shutdown at t he rated maximum junction temperature. Thermal design is required to ensure that the rated maximum operating junction temperature, Tjopr, will not be exceeded. Glass epoxy board Material: FR-4 25.4 × 25.4 × 0.8 (Unit: mm)

Electrical Characteristics (unless otherwise specified: Tj = 25°C and VIN = 2.7 to 5.5 V) Characteristics Symbol Test Condition Min Typ. Max Unit Operating input voltage VIN (OPR) ⎯ 2.7 ⎯ 5.5 V IIN1 V IN = 5 V, VEN = 5 V, VFB = 5 V ⎯ 0.68 0.9 mA Operating current IIN (STBY) 1 VIN = 5 V, VEN = 0 V, VFB = 0 V ⎯ ⎯ 1 μA Standby current IIN (STBY) 2 VIN = 2.7 V, VEN = 0 V, VFB = 0 V ⎯ ⎯ 1 μA VIH (EN) 1 V IN = 5 V 1.5 ⎯ ⎯ V VIH (EN) 2 V IN = 2.7 V 1.5 ⎯ ⎯ V VIL (EN) 1 V IN = 5 V ⎯ ⎯ 0.5 V EN threshold voltage VIL (EN) 2 V IN = 2.7 V ⎯ ⎯ 0.5 V IIH (EN) 1 V IN = 5 V, VEN = 5 V 7.6 ⎯ 12.4 μA EN input current IIH (EN) 2 V IN = 2.7 V, VEN = 2.7 V 4.1 ⎯ 6.7 μA VFB1 V IN = 5 V, VEN = 5 V, IOUT = 10 mA 0.776 0.8 0.824 V VFB input voltage IFB1 V IN = 5 V, VEN = 5 V −1 ⎯ 1 μA VFB input current IFB2 V IN = 2.7 V, VEN = 2.7 V −1 ⎯ 1 μA RDS (ON) (H) 1 VIN = 5 V, VEN = 5 V, ILX = −0.5 A ⎯ 0.27 ⎯ Ω High-side switch on-state resistance RDS (ON) (H) 2 VIN = 2.7 V, VEN = 2.7 V, ILX = −0.5 A ⎯ 0.36 ⎯ Ω RDS (ON) (L) 1 VIN = 5 V, VEN = 5 V, ILX = 0.5 A ⎯ 0.27 ⎯ Ω Low-side switch on-state resistance RDS (ON) (L) 2 VIN = 2.7 V, VEN = 2.7 V, ILX = 0.5 A ⎯ 0.36 ⎯ Ω High-side switch leakage current I LEAK (H) V IN = 5 V, VEN = 0 V, VLX = 0 V ⎯ ⎯ −1 μA Low-side switch leakage current I LEAK (L) V IN = 5 V, VEN = 0 V, VLX = 5 V ⎯ ⎯ 1 μA fosc1 V IN = 5 V, VEN = 5 V 0.85 1 1.15 MHz Oscillation frequency fosc2 V IN = 2.7 V, VEN = 2.7 V 0.85 1 1.15 MHz tss1 V IN = 5 V, VEN = 5 V, IOUT = 0 A 1 2 ⎯ ms Soft-start time tss2 V IN = 2.7 V, VEN = 2.7 V, IOUT = 0 A 1.3 2.4 ⎯ ms Detection temperature TSD V IN = 5 V ⎯ 160 ⎯ °C Thermal shutdown (TSD) Hysteresis ΔT SD V IN = 5 V ⎯ 20 ⎯ °C Detection votage V UV V IN = VEN 2.2 2.4 2.6 V Recovery voltage V UVR V IN = VEN 2.3 2.5 2.7 V Undervoltage lockout (UVLO) Hysteresis ΔV UV V IN = VEN ⎯ 0.1 ⎯ V LX current limit I LIM V IN = 5 V 1.3 2.8 ⎯ A Note on Electrical Characteristics The test condition Tj = 25°C means a state where any drifts in electrical characteristics incurred by an increase in the chip’s junction temperature can be ignored during pulse testing.

Application Circuit Example Figure 1 TB7102AF Application Circuit Example Component values (@VIN = 5 V, VOUT = 3.3 V, Ta = 25°C) These values are presented only as a guide. CIN: Input filter capacitor = 10 μF (ceramic capacitor: GRM21BB30J106K from Murata Manufacturing Co., Ltd.) COUT: Output filter capacitor = 10 μF (ceramic capacitor: GRM21BB30J106K from Murata Manufacturing Co., Ltd.) RFB1: Output voltage setting resistor = 7.5 k Ω RFB2: Output voltage setting resistor = 2.4 k Ω L: Inductor = 3.3 μH (NP04SB3R3N from Taiyo Yuden Co., Ltd.) Component values (@VIN = 5 V, VOUT = 1.2 V, Ta = 25°C) These values are presented only as a guide. CIN: Input filter capacitor = 10 μF (ceramic capacitor: GRM21BB30J106K from Murata Manufacturing Co., Ltd.) COUT: Output filter capacitor = 22 μF (ceramic capacitor: GRM31CB30J226K from Murata Manufacturing Co., Ltd.) RFB1: Output voltage setting resistance = 1.2 k Ω RFB2: Output voltage setting resistance = 2.4 k Ω L: Inductor = 3.3 μH (NP04SB3R3N from Taiyo Yuden Co., Ltd.) Component values need to be adjusted, depending on the TB7102AF’s input/output conditions and the board layout. Application Notes Inductor Selection The inductance required for inductor L can be calculated as follows: IN OUT L osc OUTIN V V I f V VL ⋅Δ ⋅ VIN: Input voltage (V) VOUT: Output voltage (V) fosc: Oscillation frequency = 1 MHz (typ.) ΔIL: Inductor ripple current (A) *: Generally, ΔIL should be set to approximately 30% of the maximum output current. Since the maximum output current of the TB7102AF is 1 A, ΔIL should be 0.3 A or so. Therefore, the inductor should have a current rating greater than the peak output current of 1.15 A. If the inductor current rating is exceeded, the inductor becomes saturated, leading to an unstable DC-DC converter operation. When VIN = 5 V and VOUT = 3.3 V, the required inductance can be calculated as follows. Be sure to select an appropriate inductor, taking the VIN range into account. PGND TB7102AF SGND GND VOUT RFB2 RFB1 LX VFB COUT GND VIN CIN CC EN VIN L

• The input voltage, output voltage, output current and temperature conditions should be considered when selecting capacitors, inductors and resistors. These components should be evaluated on an actual system prototype for best selection.
• External components such as capacitors, inductor and resistors should be placed as close to the TB7102AF as possible.
• The TB7102AF has an ESD diode between the EN and VIN pins. The voltage between these pins should satisfy VEN − VIN < 0.3 V.
• Operation might become unstable due to board layout. In that case, add a decoupling capacitor (CC) of 0.1 μF to 1μF between the SGND and VIN pins.
• The overcurrent protection circuits in the Product are designed to temporarily protect Product from minor overcurrent of brief duration. When the overcurrent protective function in the Product activates, immediately cease application of overcurrent to Product. Improper usage of Product, such as application of current to Product exceeding the absolute maximum ratings, could cause the overcurrent protection circuit not to operate properly and/or damage Product permanently even before the protection circuit starts to operate.
• The thermal shutdown circuits in the Product are designed to temporarily protect Product from minor overheating of brief duration. When the overheating protective function in the Product activates, immediately correct the overheating situation. Improper usage of Product, such as the application of heat to Product exceeding the absolute maximum ratings, could cause the overheating protection circuit not to operate properly and/or damage Product permanently even before the protection circuit starts to operate.

Typical Performance Characteristics 0 2 4 6 0.2 0.4 0.6 0.8 VEN = VFB = VIN Tj = 25°C VIN = 5.5 V Tj = 25°C 0 2 4 6 5 3 1 VIN = 5 V VEN = 5 V VFB = VIN -50 -25 0 25 50 75 125 100 0.4 0.6 0.8 1.0 0.2 VIN = 2.7 V VEN = 2.7 V VFB = VIN 0.4 0.6 0.8 1.0 0.2 -50 0 25 50 100 125 -25 75 0.5 VIN = 2.7 V VIH(EN) VIL(EN) -50 -25 0 25 50 75 100 125 VIN = 5.5 V VIH(EN) VIL(EN) -50 -25 0 25 50 75 125 100 0.5 1.5 IIN – VIN IIN – Tj Input voltage, V IN ( V ) Junction temperature, T j ( ° C ) Operating current, I IN ( m A ) Operating current, I IN ( m A ) IIN – Tj VIH(EN), VIL(EN) – Tj Junction temperature, T j ( ° C ) Junction temperature, T j ( ° C ) Operating current, I IN ( m A ) EN threshold voltage, VIH(EN), VIL(EN) ( V ) VIH(EN), VIL(EN) – Tj IIH(EN) – VIN Junction temperature, T j ( ° C ) EN input voltage, V EN (V) EN threshold voltage, VIH(EN), VIL(EN) ( V ) EN input current, IIH(EN) ( μA) 1.5

0.8 0.82 0.78 VEN = VIN VOUT = 1.2 V Tj = 25°C VIN = 5 V VEN = 5 V -50 -25 0 50 75 100 125 25 VEN = VIN Tj = 25°C 1.5 0.5 Recovery voltage VUVR Detection voltage VUV -50 -25 0 25 50 75 100 125 2.6 2.3 2.5 2.4 VEN = VIN VIN = 2.7 V VOUT = 1.2 V VEN = VIN -50 0 25 50 75 100 125 -25 0.8 0.82 0.78 0.79 0.81 VIN = 5.5 V VOUT = 1.2 V VEN = VIN -50 -25 0 25 50 75 125 100 0.8 0.82 0.78 0.79 0.81 IIH(EN) – Tj VUV, VUVR – Tj Junction temperature, T j ( ° C ) Junction temperature, T j ( ° C ) EN input current, IIH(EN) ( μA) Undervoltage detection voltage, V UV, VUVR (V) VOUT – VIN VFB – VIN Input voltage, V IN ( V ) Input voltage, V IN ( V ) Output voltage, V OUT (V) Feedback pin voltage, V FB ( V ) VFB – Tj VFB – Tj Junction temperature, T j ( ° C ) Junction temperature, T j ( ° C ) Feedback pin voltage, V FB ( V ) Feedback pin voltage, V FB ( V ) 0.79 0.81

VOUT = 1.2 V Tj = 25°C 1.1 1.2 0.8 0.9 2 4 6 VOUT = 1.2 V, IOUT = 0.2 A L = 3.3 μH, COUT = 22 μF Ta = 25°C 3 5 0 0.2 1 VIN = 3.3 V, VOUT = 1.2 V L = 3.3 μH, COUT = 22 μF Ta = 25°C -20 -10 -15 0.4 0.6 0.8 -20 VIN = 5 V, VOUT = 1.2 V L = 3.3 μH, COUT = 22 μF Ta = 25°C -15 -10 0 0.2 1 0.4 0.6 0.8 VIN = 5 V, VOUT = 3.3 V L = 3.3 μH, COUT = 10 μF Ta = 25°C -30 -10 -20 0 0.2 1 0.4 0.6 0.8 VIN = 5 V VOUT = 1.2 V -50 -25 0 25 50 75 100 125 1.1 1.2 0.8 0.9 fosc – VIN fosc – Tj Input voltage, V IN ( V ) Junction temperature, T j ( ° C ) Oscillation frequency, f osc ( M H z ) Oscillation frequency, f osc ( M H z ) ΔVOUT – IOUT ΔVOUT – IOUT Output current, I OUT (A) Output current, I OUT (A) Output voltage, ΔVOUT ( m V ) Output voltage, ΔVOUT ( m V ) ΔVOUT – IOUT ΔVOUT – VIN Output current, I OUT (A) Input voltage, V IN ( V ) Output voltage, ΔVOUT ( m V ) Output voltage, ΔVOUT ( m V )

VIN = 3.3 V VOUT = 1.2 V L = 3.3 μH COUT = 22 μF Ta = 25°C 100 0 0.2 1 0.4 0.6 0.8 VIN = 5 V, VOUT = 1.2 V L = 3.3 μH, COUT = 22 μF Ta = 25°C 100 0 0.2 1 0.4 0.6 0.8 VIN = 5 V VOUT = 3.3 V L = 3.3 μH COUT = 10 μF Ta = 25°C 100 0 0.2 1 0.4 0.6 0.8 VOUT = 3.3 V, IOUT = 0.2 A L = 3.3 μH, COUT = 10 μF T = 25°C -30 -10 -20 2 4 6 3 5 Output current: IOUT: (10 mA→800 mA→10 mA)VIN = 5 V, VOUT = 3.3 V L = 3.3 μH, COUT = 10 μF Ta = 25°C Output voltage VOUT (200 mV/Div) VIN = 5 V VOUT = 1.2 V IOUT = 0 A L = 3.3 μH, COUT = 22 μF Ta = 25°C Output voltage VOUT: (500 mV/Div) Input Current IIN : (200 mA/Div) EN voltage: VEN:L→H ΔVOUT – VIN η – IOUT Input voltage, V IN ( V ) Output current, I OUT (A) Output voltage, ΔVOUT ( m V ) Efficiency, η (%) η – IOUT η – IOUT Output current, I OUT (A) Output current, I OUT (A) Efficiency, η (%) Efficiency, η (%) Load Response Startup Characteristic 100 μs/Div 400 μs/Div

Figure 6 Circuit of the Board Layout Example External Component Examples Label Vendor Part Number IC1 Toshiba Corporation TB7102AF C1 Murata Manufacturing Co., Ltd. GRM21BB30J106K C2 Murata Manufacturing Co., Ltd. GRM21BB30J106K R1 KOA Corporation RK73H1ET R2 KOA Corporation RK73H1ET L1 Taiyo Yuden Co., Ltd. NP04SB3R3N EN VIN VFB Lx N.C. N.C. PGND SGND JP1 IC1 VIN VOUT GND GND TP2 TP1 TP4 TP3

Weight: 0.017 g (typ.)

RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collect ively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
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