TB7100F TOSHIBA | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 17

Technical content

Features

  • Capable of high current drive (IOUT = maximum of 700 mA), using only a few external components
  • High efficiency (η = 90% or higher) (@VIN = 5V, VOUT = 3.3V, and IOUT = 300 mA).
  • Operating voltage (VIN) range: 3 to 5.5 V
  • Low on-resistance (RDS(ON)): 0.27 Ω (typ.) if VIN = 5 V
  • High oscillation frequency of 550 kHz (typ.), making it possible to use small external components.
  • Uses external phase compensation, assuring a high degree of design freedom in selecting external components and determining a loop response.
  • Employs a current mode architecture with excellent fast load response.
  • A small surface mount-type ceramic capacitor can be used as an output smoothing capacitor.
  • Housed in a small surface-mount package (PS-8) with a low thermal resistance. P i n A s s i g n m e n t M a r k i n g Due to its MOS structure, this product is sensitive to electrostatic discharge. Handle with care. SON8-P-0303-0.65A(PS-8) Weight: 0.016 g (Typ.) FB COMP R T PGND ENB VIN SW SGND ・The dot (•) on the top surface indicates pin 1. *: Lot number 7100 Part number

Pin No. Pin Symbol Pin Description 1 COMP Pin for connecting an error amplifie r phase compensation resistor and capacitor.

2 R T Oscillation frequency setting pin for connecting a resistor to the internal oscillation

circuit. Connecting 120 kΩ to this pin operates the oscillation circuit at 550 kHz (typ.).

3 PGND Power ground

4 SGND Signal ground

Switching pin. A P-channel MOSFET is connected between the VIN and SW pins. The peak switch current corresponding to the voltage that is generated at the COMP pin flows through the power MOSFET. The rating of this peak switch current is 1.0 A (min). 6 V IN Input pin. This pin is placed in the standby state if VENB = low. 1 μA or lower operating current

7 ENB

Enable pin. This pin is connected to the CMOS inverter. Applying 3.5 V or higher (@ VIN = 5 V) to this pin starts the internal circuit to perform switching control. 8 FB Output voltage feedback pin. This is connected to the internal error amplifier, which is supplied with a reference voltage of 0.8 V (typ.). Driver Control logic Temperature detection Oscillator Reference voltage supply Current detection Error amplifier Reference voltage (0.8 V) 1.2 V VIN (pin 6) SW (pin 5) FB (pin 8) COMP (pin 1) PGND (pin 3) SGND (pin 4) R T (pin 2) ENB (pin 7)

T VSW TON OSC VSW Tch VIN OSC VSW The peak switch current is determined according to the VCOMP. Hysteresis: 25°C (typ.) Hysteresis: 0.1 V (typ) Tch increase OSC : Internal oscillato r output voltage IOUT : Load current VOUT : Output voltage VCOMP : COMP pin voltage IL : Inductor current VSW : SW pin voltage VIN : Input pin voltage Tch : Channel temperature

Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN -0.3~ 6 V Switch pin voltage VSW -0.3~ 6 V Feedback pin voltage VFB -0.3~ 6 V Enable pin voltage VENB -0.3~ 6 V Input-enable pin voltage VENB-VIN V ENB-VIN<0.3 V Power dissipation (Note 1) PD 0.7 W Operating temperature Topr -40 ~85 ℃ Channel temperature Tch 150 °C Storage temperature Tstg -55 ~150 °C Thermal Resistance Characteristic Characteristics Symbol Max Unit Thermal resistance, channel and ambient Rth (ch-a) 178.6 (Note 1) °C /W (Note 1) Glass epoxy board Material : FR-4 25.4 × 25.4 × 0.8 (Unit: mm)

Electrical Characteristics (unless otherwise specified: Ta = 25°C and VIN = 3 to 5.5 V) Characteristics Symbol Test circuit Test condition Min Typ. Max Unit Operating supply voltage VIN(OPR) - - 3 5 5.5 V Load current IOUT - - - - 700 mA Operating current IIN - VIN = 5 V, VENB= 5 V, VFB = 0.7 V RT = 120 kΩ - 570 750 μA Standby current IIN(STBY) - VIN= 5 V, VENB= 0 V, VFB = 0.9 V - - 1 μA VIH - VIN = 5 V 3.5 - - V Enable pin threshold voltage VIL - VIN = 5 V - - 1.5 V Enable pin input current IIH VIN = 5 V, VENB = 5 V - - 20 μA Feedback pin current IFB - - -1 - 1 μA Feedback pin voltage VFB - - 0.776 0.8 0.824 V Feedback pin line regulation ΔVFB(LINE) - VIN = VENB = 3 V~5 V - 1.6 5 mV/V High-side on-state resistance RDS(ON) - VIN = 5 V, VENB = 5 V, ISW = - 0.5 A - 0.27 0.6 Ω High-side leakage current ILEAK - VIN = 5 V, VENB = 0 V, VSW = 0 V - - -1 μA Oscillation frequency fOSC - VIN = 5 V, VENB = 5 V, RT = 120 k Ω - 550 - kHz Error amplifier conductance gm - VIN = 5 V, VENB = 5 V ICOMP = ±20μA - 800 - μS Peak switch current ISW(PEAK) - - 1.0 1.5 - A Detection VUV - - 2.3 2.5 2.7 V Undervoltage protection Hysteresis ΔVUV - - - 0.1 - V Detection TSD - - 125 145 - ℃ Overheat protection Hysteresis ΔT SD - - 25 - ℃

Application Circuit Example Figure 1: TB7100F application circuit example Component constants The following values are given only for your reference and may need tuning depending on your input/output conditions and board layout. CIN: Input smoothing capacitance of 10 μF (multilayer ceramic capacitor JMK212BJ106KG, manufactured by Taiyo Yuden Co., Ltd.) COUT: Output smoothing capacitance of 10 μF (multilayer ceramic capacitor JMK212BJ106KG manufactured by Taiyo Yuden Co., Ltd.) CCOMP1: Error amplifier phase compensation capacitance of 3300 pF (@ VIN = 5 V, VOUT = 3.3 V, and RT = 120 kΩ) CCOMP2: Error amplifier phase compensation capacitance (not used if phase compensation is possible only with RCOMP and CCOMP1) CFB: Error amplifier phase compensation capacitance (not used if phase compensation is possible only with RCOMP and CCOMP1) RCOMP: Error amplifier phase compensation resistance of 1 kΩ (@ VIN = 5 V, VOUT = 3.3 V, and RT = 120 kΩ) RT: Oscillation frequency setting resistance of 120 kΩ (@ fOSC = 550 kHz) RFB1: Output voltage setting resistance of 75 kΩ (@ VIN = 5 V, VOUT = 3.3 V, and RT = 120 kΩ) RFB2: Output voltage setting resistance of 24 kΩ (@ VIN = 5 V, VOUT = 3.3 V, and RT = 120 kΩ) L: Inductor 6.8 μH (@ VIN = 5 V, VOUT = 3.3 V, and RT = 120 kΩ); CDRH4D28C/LD series, manufactured by Sumida Corporation SBD: Schottky barrier diode CRS06 (@ VRRM = 20 V and IF(AV) = 1 A), manufactured by Toshiba Corporation How to use Setting the Inductance The required inductance can be calculated by using the following equation: ⎛ − ⋅Δ ⋅= INV OUTV1 LIOSCf OUTVL … (1) VIN: Input voltage (V) fOSC: Oscillation frequency (Hz) VOUT: Output voltage (V) Δ IL: Inductor ripple current (A) * Generally, ΔIL should be set to 30% to 40% of the peak current flowing through the inductor. For the TB7100F, set ΔIL to 0.3 A, as its peak switch current [ISW(PEAK)] is 1 A (min). Therefore select an inductor whose current rating is no lower than the peak switch current [1 A (min)] of the TB7100F. If the current rating is exceeded, the inductor becomes saturated, leading to an unstable DC-DC converter operation. If VIN = 5 V and VOUT = 3.3 V, the required inductance can be calculated as below. Be sure to select an inductor with an optimum constant by taking VIN variations into consideration. TB7100F SBD RFB1 RFB2 CFB COUT RT CCOMP1 RCOMP CCOMP2 CIN FB PGNDSGND ENB VIN RT COMP VIN=5V VOUT=3.3V GND GND L SW

Hμ8 . 6 V 5 V 3 . 31mA 300 kHz 550 V 3 . 3 INV OUTV1 LIOSCf OUTVL ⎛ − ⋅⋅= ⎛ − ⋅Δ ⋅= Figure 2: Inductor current waveform Setting the output voltage For the TB7100F, the output voltage is set using the voltage dividing resistors RFB1 and RFB2 according to the reference voltage [0.8 V (typ.)] of the error amplifier connected to the FB pin. If the RFB1 value is extremely large, a delay can occur due to a parasitic capacitance at the FB pin. Keep the RFB1 value within approximately 100 kΩ. The output voltage can be calculated by using equation 2 below. It is recommended that a resistor with a precision of ±1% or higher be used for setting the output voltage.

2 FBR

1 FBR1 ( 8 . 0

1 FBR1 (REFVOUTV

+ × = + ⋅ = Figure 3: Output voltage setting resistors Setting the COMP pin for phase compensation The COMP pin is intended to compensate for any phase delay that may occur inside or outside the TB7100F. Phase compensation is carried out using resistors and capacitors connected to the COMP pin. The constants of the phase compensation components are selected by first specifying RCOMP and CCOMP to be, respectively, 1 kΩ and 3300 pF. However, it is necessary to measure the SW pin oscillation waveform and load response characteristics and tune the component constants, optimizing them so as to optimize the influence of your board layout and component characteristics. When tuning component constants, carefully evaluate them while taking component variations and temperature characteristics into consideration. Table 1 lists the relationships between the RCOMP and CCOMP constants. Use these as a guideline in selecting constants. SW pin waveform stability Load response characteristic Large Decreased Increased RCOMP Small Increased Decreased Large Increased Decreased CCOMP Small Decreased Increased Table 1: Relationships between RCOMP and CCOMP values Output capacitor The capacitance of the output ceramic capacitor is greatly affected by temperature. Select a product whose temperature characteristics (such as B-characteristic) are excellent. Set the capacitance to an optimum value that meets the set's ripple requirement and is not lower than 10 μF. It is more difficult to achieve phase compensation with ceramic capacitors than with tantalum electrolytic capacitors because the equivalent series resistance (ESR) of the former is much lower than that of the latter. For this reason, perform a careful evaluation when using ceramic capacitors. Miscellaneous Generally, a DC-DC converter under current mode control may fail to operate at a constant duty ratio if the duty ratio is 50% or higher. This IC incorporates slope compensation to achieve as stable an operation as possible. However, a delay in the internal circuit may prevent the IC from operating at a constant duty ratio when the duty ratio is 50% or so depending on your input/output and load conditions. SW VOUT RFB1 FB RFB2 OSCf 1T = ⎟⎟ ⎛ − ⋅ = INV OUTV1 TOFFT ΔIL IL … (2)

Figure 4: TB7100F board layout

  • For the supply voltage, output, and ground lines, which carry high current, use thick wires and make them as short as possible so as to keep their impedance low.
  • Place the input/output smoothing capacitors and inductor as close to the IC as possible.
  • For the output voltage monitoring FB line, keep the wire as short as possible to counter the effects of noise.
  • Design the layout to ensure that no voltage potential difference occurs between the SGND and PGND pins. Otherwise, the operation of the IC may become unstable.
  • It is recommended you place the components connected to the COMP and R T pins as close to the IC as possible and ground them at a single point so as stabilize the voltage at these pins. Otherwise, the operation of the IC may become unstable.
  • The leakage current of the SBD may increase at high temperatures, leading to a thermal runaway. Ensure, therefore, that no problem with the SBD will occur even under the worst-case conditions. A DC-DC converter using this IC is greatly affected by the characteristics of external components and the impedance of the PCB. Make sure that there is no problem with the dependency of the load current on its output voltage and load response even when any component constant deviates from the corresponding value given above for reference purposes. Also, design the DC-DC converter by selecting optimum external components and a suitable board layout so that no rating of this IC will be exceeded. Precautions
  • If the voltage between the input and output is low, the influence of the on-state voltage of the switch power MOSFET is greater, causing the voltage across the inductor to decrease. For this reason, it may become impossible for the required inductor current to flow, resulting in lower performance or unstable operation of the DC-DC converter. As a rough standard, keep the input-outp ut voltage potential difference at or above 1 V, taking the on-state voltage of the power MOSFET into consideration.
  • The lowest output voltage that can be set is 0.8 V (typ.).
  • There is an antistatic diode between the ENB and VIN pins. The voltage between the ENB and VIN pins should satisfy the rating VENB - VIN < 0.3 V TB7100F RT RFB1 RFB2 COUT SBD RCOMP CCOMP CIN ENB VIN FB SW SW PGND SGND COMP RTVIN GND VOUT L : For the sections shown as solid lines, use thick wires and make them as short as possible.

-80 -40 0 40 80 120 160 Operating current I IN ( μA) Ambient temperature T a ( ° C ) IIN – Ta VIN = 3 V VENB = 3 V VFB = 0.7 V RT = 120 kΩ 200 400 600 800 1000 -80 -40 0 40 80 120 160 IIN – Ta Operating current I IN ( μA) Ambient temperature T a ( ° C ) VIN = 5.5 V VENB = 5.5 V VFB = 0.7 V RT = 120 kΩ -80 -40 0 40 80 120 160 ENB pin threshold voltage V IH,VIL (V) Ambient temperature T a ( ° C ) VIH, VIL – Ta -80 -40 0 40 80 120 160 VIH, VIL – Ta ENB pin threshold voltage V IH,VIL (V) Ambient temperature T a ( ° C ) VIN = 5 V 02468 IIH – VIN ENB pin input current I IH ( μA) Input voltage V IN (V ) VIN = 5.5 V Ta= 25°C VIH VIL Operating current I IN ( μA) IIN – VIN Input voltage V IN (V ) VENB = VIN VFB = 0.7 V RT = 120 kΩ Ta = 25 °C VIN = 3 V VIH VIL

Error amplifier output conductance g m ( μS) 200 400 600 800 1000 -80 -40 0 40 80 120 160 gm – Ta Ambient temperature T a ( ° C ) VIN = 5 V ICOMP=±20μA Error amplifier output conductance g m ( μS) 200 400 600 800 1000 -80 -40 0 40 80 120 160 gm – Ta Ambient temperature T a ( ° C ) VIN = 3 V ICOMP=±20μA 2.2 2.4 2.6 2.8 -80 -40 0 40 80 120 160 Undervoltage detection V UV (V) VUV – Ta Ambient temperature T a ( ° C ) Detection Return gm – VIN Error amplifier output conductance g m ( μS) 200 400 600 800 1000 02468 Input voltage V IN (V ) ICOMP=±20μA Ta = 25 °C -80 -40 0 40 80 120 160 VIN = 5 V VENB= 5V ENB pin input current I IH ( μA) Ambient temperature T a ( ° C ) IIH – Ta 0.1 0.2 0.3 0.4 02468 High-side on-resistance R DS(ON) ( Ω) RDS(ON) – VIN Input voltage V IN (V ) ISW = - 0.5 A Ta = 25 °C

0.5 0.6 0.7 0.8 0.9 -80 -40 0 40 80 120 160 0.1 0.2 0.3 0.4 0.5 0.6 -80 -40 0 40 80 120 160 Feedback pin voltage V FB (V) Ambient temperature T a ( ° C ) VFB – Ta VIN = 3 V VENB = VIN 0.5 0.6 0.7 0.8 0.9 -80 -40 0 40 80 120 160 Ambient temperature T a ( ° C ) Feedback pin voltage V FB (V) VFB – Ta VIN = 5 V 200 400 600 800 1000 02468 Oscillation frequency f OSC (kHz) fOSC – VIN VENB = VIN RT = 120 kΩ Ta = 25 °C 0.5 0.6 0.7 0.8 0.9 02468 Input voltage V IN (V ) Feedback pin voltage V FB (V) VFB – VIN VENB = VIN Ta = 25 °C High-side on-resistance R DS(ON) ( Ω) Ambient temperature T a ( ° C ) RDS(ON) – Ta VIN = 5 V ISW = - 0.5 A 0.1 0.2 0.3 0.4 High-side on-resistance R DS(ON) ( Ω) RDS(ON) – ISW Switch current I SW (A ) 5 V VIN = 3 V VENB = VIN Ta = 25 °C

Oscillation frequency f OSC (kHz) 100 1000 10000 10 100 1000 fOSC – RT Oscillation frequency setting resistance R T ( k Ω ) VIN = 5V VENB = 5V Ta = 25 °C 200 400 600 800 1000 -80 -40 0 40 80 120 160 Ambient temperature T a ( ° C ) Oscillation frequency f OSC (kHz) fOSC – Ta VIN = 5 V VENB = 5 V Load current I OUT (A) VOUT – IOUT Load current I OUT (A) VOUT – IOUT Output voltage V OUT (V) Output voltage V OUT (V) 1.3 1.6 1.7 0.001 0.1 1 1.3 1.6 1.4 1.7 1.5 1.4 1.5 0.001 1 0.1 Load current I OUT (A) VOUT – IOUT Load current I OUT (A) VOUT – IOUT Output voltage V OUT (V) 1.9 1.8 1.7 1.6 2.0 0.001 1 Output voltage V OUT (V) 2.0 1.9 1.7 1.6 0.001 1 0.1 VIN = 3.3 V VOUT = 1.5 V fOSC = 550 kHz L = 4.7 μH RCOMP = 1 kΩ CCOMP = 3300pF Ta = 25°C 0.01 VIN = 5 V VOUT = 1.5 V fOSC = 550 kHz L = 6.8 μH RCOMP = 1 kΩ CCOMP = 3300pF Ta = 25°C 0.01 VIN = 3.3 V VOUT = 1.8 V fOSC = 550 kHz L = 4.7 μH RCOMP = 1 kΩ CCOMP = 3300pF Ta = 25°C 0.01 0.1 VIN = 5 V VOUT = 1.8 V fOSC = 550 kHz L = 6.8 μH RCOMP = 1 kΩ CCOMP = 3300pF Ta = 25°C

2.3 0.001 1 2.4 2.7 2.5 2.6 Output voltage V OUT (V) Load current I OUT (A) VOUT – IOUT Load current I OUT (A) VOUT – IOUT Output voltage V OUT (V) 3.1 3.3 3.4 3.5 0.001 1 3.2 0.1 0.1 VIN = 5 V VOUT = 2.5 V fOSC = 550 kHz L = 6.8 μH RCOMP = 1 kΩ CCOMP = 3300pF Ta = 25°C 0.01 VIN = 5 V VOUT = 3.3 V fOSC = 550 kHz L = 6.8 μH RCOMP = 1 kΩ CCOMP = 3300pF Ta = 25°C 0.01 0.001 0.1 1 100 Efficiency η ( % ) Load current I OUT (A) η – I OUT Load current I OUT (A) η – I OUT Efficiency η ( % ) Load current I OUT (A) η – I OUT Load current I OUT (A) η – I OUT 100 0.001 1 Efficiency η ( % ) Efficiency η ( % ) 100 0.001 1 VIN = 3.3 V VOUT = 1.5 V fOSC = 550 kHz L = 4.7 μH RCOMP = 1 kΩ CCOMP = 3300pF Ta = 25°C 100 0.001 0.1 1 0.1 0.01 0.1 VIN = 5 V VOUT = 1.5 V fOSC = 550 kHz L = 6.8 μH RCOMP = 1 kΩ CCOMP = 3300pF Ta = 25°C 0.01 0.01 VIN = 3.3 V VOUT = 1.8 V fOSC = 550 kHz L = 4.7 μH RCOMP = 1 kΩ CCOMP = 3300pF Ta = 25°C VIN = 5 V VOUT = 1.8 V fOSC = 550 kHz L = 6.8 μH RCOMP = 1 kΩ CCOMP = 3300pF Ta = 25°C

Load current I OUT (A) η – I OUT Load current I OUT (A) η – I OUT Efficiency η ( % ) Efficiency η ( % ) 100 0.001 0.1 1 0.001 0.1 1 100 0.01 VIN = 5 V VOUT = 2.5 V fOSC = 550 kHz L = 6.8 μH RCOMP = 1 kΩ CCOMP = 3300pF Ta = 25°C VIN = 5 V VOUT = 3.3 V fOSC = 550 kHz L = 6.8 μH RCOMP = 1 kΩ CCOMP = 3300pF Ta = 25°C 0.01 0.2 0.4 0.6 0.8 0 40 80 120 160 Ambient temperature T a ( ° C ) Power dissipation P D (W) PD – Ta 25.4×25.4×0.8mm Refer to Note 1 for the pattern when mounted on a glass epoxy board.

SON8-P-0303-0.65A Unit: mm Weight: 0.016 g (Typ.) 0.33 ± 0.05 0.475 0.65 0.1 max 2.9 ± 0.1 A 2.4 ± 0.1 2.8 ± 0.1 B 0.8 ± 0.05 S 0.17 ± 0.02 0.025 S 0.28 +0.1 - 0.110.28 +0.1 - 0.11 1.12 +0.13 - 0.121.12 +0.13 - 0.12 0.05 BM 0.05 AM

RESTRICTIONS ON PRODUCT USE 20070701-EN

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
  • The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
  • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
  • Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.