TB7001FL

TB7001FL TOSHIBA | Alldatasheet

Document overview

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Technical content

Features

• 3 chips (high-side MOSFET, low-side MOSFET, MOSFET gate driver- IC) are in 1 package.
• Maximum Input voltage is 19V, it is capable for note-PC applications.
• Under voltage lockout and thermal shut down
• Keeping off low-side MOSFET function. When load current is low, low-side MOSFET is able to been kept off. Consequently the efficiency increases at low load condition.
• Internal control circuit disable function. The quiescent current is less than 10ЖA.
• High operation frequency : f c = 1MHz (Max.)
• High output current : I OUT = 20A (Max.)
• High efficiency : Б = 85% ( ˏVIN = 12 VɺVOUT = 1.5 VɺIOUT = 20Aɺfc = 1MHz) Maximum ratings (Ta = 25°C)çççç Characteristics Symbol Ratings Unit VIN to PGND voltage V IN 30 V LX to PGND voltage V LX -2 ʙ 30 V VDD to SGND voltage V DD -0.3 ʙ 6 V BST to LX voltage V BST-LX -0.3 ʙ V DD +0.3 V BST to SGND voltage V BST -0.3 ʙ 30 V ON/OFF to SGND voltage V ON/OFF -0.3 ʙ V DD +0.3 V SD to SGND voltage V SD -0.3 ʙ V DD +0.3 V DISBL to SGND voltage V DISBL -0.3 ʙ V DD +0.3 V Output RMS current I OUT 20 A Power dissipation P D TBD W Operating channel temperature T ch-opr −40 ~ 150 °C Storage temperature T stg −55 ~ 150 °C Preliminary

T o p v i e w S i d e v i e w B o t t o m v i e w Block diagram 8.00mm 29 42 8.00mm 0.85mm 0.20mm 1 14 29 42 6.35mm 3.65mm 0.25mm min. 2.30mm 0.25mm min 2.30mm 3.65mm 0.25mm min 0.23mm0.50mm ON/OFF Level shift SD SGND BST LX VDD PGND VIN ʙ19V 5Vʶ0.5VDriver IC PGND(IC) LO HO DISBL Overlap protection UVLO 1.5V/20A

Name No. Functions Notes CGND 1,51,Tab Internal driver-IC chip bed Connect to the SGND SGND 2 Internal driver-IC signal ground Connect to the PGND SD 3 Shut down signal for the low-side MOSFET. When set to low, the low-side MOSFET is turned off. BST 4 Connect to the external boot strap capacitor HO 5 High-side MOSFET gate signal For monitoring NC 6,7,8,39 No internal connection. Keep them open. VIN 9 ʙ20,Tab Input voltage for the DC-DC converter LX 21,40 ʙ50,Tab Switching node. Connect to the output inductor. PGND 22 ʙ38 Power ground LO 52 Low-side MOSFT gate signal For monitoring PGND(IC) 53 Internal driver-IC power ground VDD 54 Supply voltage for the internal driver-IC DISBL 55 Disable signal for the internal control circuit. When set to low, the Internal control circuit is disabled. The high-side MOSFET and low-side MOSFET are turned off. ON/OFF 56 Input signal VIN VIN 3 4 5 VIN 6 78 9 10 11 12 13 14 29303132333435363738394041 42 VIN VIN VIN VIN VIN VIN VIN VIN VIN NC NC VIN LX LX LX LX LX LX LX LX LX LX NC PGND PGND PGND PGND PGND PGND PGND PGND PGND PGND PGND PGND LX PGND PGND PGND PGND PGND CGND LO PGND(IC) DISBL VDD ON/OFF SGND SD BST CGND HO CGND LX LX NC

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Under voltage lockout : When V DD is lower than Under voltage lockout start threshold, the operation is stopped. çççççççç W h e n V DD is higher than Under voltage lockout stop threshold, it return to the normal operation. çççççççç (The hysteresis between lockout start and lockout stop is 0.7V .) ON/OFF VDD LX Under voltage lockout start threshold Under voltage lockout stop threshold

Electrical specifications (VDD=5V , Ta=25ˆˆˆˆ , unless otherwise noted.) Characteristics Symbol Terminal Conditions Min. Typ. Max. Unit Operating input Voltage (VIN) VIN(OPR) VIN ʵ 7 ʵ 19 V Operating input Voltage (VDD) VDD(OPR) VDD ʵ 4.5 5 5.5 V VDD quiescent current I DD(OFF) VDD VDISBL = 0 ʵ ʵ 15 ЖA ON/OFF input current H I INH(ON/OFF) ON/OFF VON/OFF = 5V ʵ 0.25 0.4 mA ON/OFF input current L I INL(ON/OFF) ON/OFF VON/OFF = 0 ʵ 0 ʵ mA SD input current H I INH(SD) SD VSD = 5V ʵ 0 ʵ mA SD input current L I INL(SD) SD VSD = 0 -0.4 -0.25 ʵ mA ON/OFF input rising threshold VH(ON/OFF) ON/OFF ʵ 2.0 ʵ ʵ V ON/OFF input falling threshold VL(ON/OFF) ON/OFF ʵ ʵ ʵ 0.8 V SD input rising threshold VH(SD) SD ʵ 2.0 ʵ ʵ V SD input falling threshold VL(SD) SD ʵ ʵ ʵ 0.8 V DISBL input rising threshold VH(DISBL) DISBL ʵ 2.0 ʵ ʵ V DISBL input falling threshold VL(DISBL) DISBL ʵ ʵ ʵ 0.8 V RDS(ON)(L) LX-PGND ILX = 10A ʵ 5 mЊ Output ON resistance RDS(ON)(H) VIN-LX ILX = -10A , VBST-LX = 5V ʵ 10 mЊ ILEAK(H) VIN-LX VIN = 24V , LX = 0 ʵ ʵ 10 ЖA Output cut-OFF current ILEAK(L) LX-PGND VLX = 24V , PGND = 0 ʵ ʵ 100 ЖA Turn off t off LX ʵ 30 ʵ ns Switching time Turn on t on LX VBST-LX = 5V ILX=-20A ʵ 60 ʵ ns Internal SBD foreword voltage VF PGND-LX IDR=10A ʵ 0.6 0.7 V Under voltage lock out start threshold VUVLO VDD ʵ 2.6 2.8 3.1 V Under voltage lock out hysteresis Vhys-UVLO VDD ʵ ʵ 0.7 ʵ V toff ton ON/OFF LX 90% 10% 90% 10%