TB3500L-13

TB0640L DIODES | Alldatasheet

Document overview

• Manufacturer or author: IT Staff Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Features

• 30A Peak Pulse Current @ 10/1000ms
• 150A Peak Pulse Current @ 8/20ms
• 58 - 320V Stand-Off Voltages
• Oxide-Glass Passivated Junction
• Bi-Directional Protection In a Single Device
• High Off-State impedance and Low On-State Voltage Mechanical Data
• Case: SMB, Molded Plastic
• Plastic Material: UL Flammability Classification Rating 94V-0
• Moisture sensitivity: Level 1 per J-STD-020A
• Terminals: Solder Plated Terminal - Solderable per MIL-STD-202, Method 208
• Polarity: None; Bi-Directional Devices Have No Polarity Indicator
• Weight: 0.093 grams (approx.)
• Marking: Date Code and Marking Code (See Page 4)
• Ordering Information: See Page 4 Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. B A C D FH E G Characteristic Symbol Value Unit Non-Repetitive Peak Impulse Current @10/1000us Ipp 30 A Non-Repetitive Peak On-State Current @8.3ms (one-half cycle) ITSM 15 A Junction Temperature Range Tj -40 to +150 °C Storage Temperature Range TSTG -55 to +150 °C Thermal Resistance, Junction to Lead RqJL 30 °C/W Thermal Resistance, Junction to Ambient RqJA 120 °C/W Typical Positive Temperature Coefficient for Breakdown Voltage DVBR/DTj 0.1 %/°C SMB Dim Min Max A 4.06 4.57 B 3.30 3.94 C 1.96 2.21 D 0.15 0.31 E 5.21 5.59 F 0.05 0.20 G 2.01 2.62 H 0.76 1.52 All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Maximum Rated Surge Waveform Waveform Standard Ipp (A) 2/10 us GR-1089-CORE 200 8/20 us IEC 61000-4-5 150 10/160 us FCC Part 68 100 10/700 us ITU-T, K20/K21 60 10/560 us FCC Part 68 50 10/1000 us GR-1089-CORE 30

0 TIME

I , PEAK PULSE CURRENT (%)PP Peak Value (I )pp Half Value t = rise time to peak valuer t = decay time to half valuep tr tp TCUDORP WEN UNDER DEVELOPMENT

DS30359 Rev. 2 - 1 2 of 4 TB0640L - TB3500L Electrical Characteristics @ TA = 25°C unless otherwise specified Part Number Rated Repetitive Off-State Voltage Off-State Leakage Current @ VDRM Breakover Voltage On-State Voltage @ IT = 1A Breakover Current IBO Holding Current IH Off-State Capacitance Marking Code VDRM (V) IDRM (uA) VBO (V) VT (V) Min (mA) Max (mA) Min (mA) Max (mA) CO (pF) TB0640L 58 5 77 3.5 50 800 150 800 100 T064L TB0720L 65 5 88 3.5 50 800 150 800 100 T072L TB0900L 75 5 98 3.5 50 800 150 800 100 T090L TB1100L 90 5 130 3.5 50 800 150 800 60 T110L TB1300L 120 5 160 3.5 50 800 150 800 60 T130L TB1500L 140 5 180 3.5 50 800 150 800 60 T150L TB1800L 160 5 220 3.5 50 800 150 800 60 T180L TB2300L 190 5 265 3.5 50 800 150 800 40 T230L TB2600L 220 5 300 3.5 50 800 150 800 40 T260L TB3100L 275 5 350 3.5 50 800 150 800 40 T310L TB3500L 320 5 400 3.5 50 800 150 800 40 T350L Symbol Parameter VDRM Stand-off Voltage IDRM Leakage current at stand-off voltage VBR Breakdown voltage IBR Breakdown current VBO Breakover voltage IBO Breakover current IH Holding current NOTE: 1 VT On state voltage IPP Peak pulse current CO Off-state capacitance NOTE: 2 Notes: 1. IH > (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time does not exceed 30ms. 2. Off-state capacitance measured at f = 1.0MHz, 1.0VRMS signal, VR = 2VDC bias. IBO VBR VDRM VT VBO IH I V IBR IDRM IPP TCUDORP WEN UNDER DEVELOPMENT

DS30359 Rev. 2 - 1 3 of 4 TB0640L - TB3500L 0.9 T , JUNCTION J TEMPERATURE (°C) Fig. 2 Relative Variation of Breakdown Voltage vs. Junction Temperature V = (T )BR J V = (T = 25°C)BR J 0.95 1.05 1.1 1.15 1.2 -50 -25 0 25 50 75 100 125 150 175 NORMALIZED BREAKDOWN VOLTAGE 100 1 2 543 76 98 I , ON-STATE CURRENT (A)T V , ON-STATE VOLTAGE (V)T Fig. 4 On-State Current vs. On-State Voltage T = 25°Cj 0.5 1.5 -50 -25 0 25 50 10075 125 NORMALIZED HOLDING CURRENT T , JUNCTION TEMPERATURE (°C)J Fig. 5 Relative Variation of Holding Current vs. Junction Temperature I = (T )H J I = (T = 25°C)H J 0.1 1 10 100 NORMALIZED CAPACITANCE V , REVERSE VOLTAGE (V)R Fig. 6 Relative Variation of Junction Capacitance vs. Reverse Voltage Bias C = (V )O R C = (V = 1V)O R T = 25°Cj f = 1 Mhz VRMS = 1V TCUDORP WEN UNDER DEVELOPMENT 1.05 0.95 -50 NORMALIZED BREAKDOWN VOLTAGE T , JUNCTION TEMPERATURE (ºC)J Fig. 3 Relative Variation of Breakover Voltage vs. Junction Temperature 1.1 -25 0 755025 125100 175150 V = (T )BO J V = (T = 25°C)BO J T , JUNCTION TEMPERATURE (°C)J Fig. 1 Off-State Current vs. Junction Temperature 0.001 0.01 0.1 100 -25 0 25 50 75 100 125 150 V = 50VDRM

DS30359 Rev. 2 - 1 4 of 4 TB0640L - TB3500L TCUDORP WEN Ordering Information (Note 3) Marking Information Date Code Key UNDER DEVELOPMENT Device Packaging Shipping TB0640L-13 TB0720L-13 TB0900L-13 TB1100L-13 TB1300L-13 TB1500L-13 TB1800L-13 TB2300L-13 TB2600L-13 TB3100L-13 TB3500L-13 SMB 3000/Tape & Reel XXXXX YWW XXXXX = Product Type Marking Code YWW = Date Code Marking Y = Year ex: 2 = 2002 WW = Week Year 2002 2003 2004 Code 2 3 4