TB0640M–TB3500M
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 6
Technical content
Features
- 50A Peak Pulse Current @ 10/1000µs
- 250A Peak Pulse Current @ 8/20µs
- 58V to 320V Stand-Off Voltages
- Oxide-Glass Passivated Junction
- Bi-Directional Protection in a Single Device
- High Off-State Impedance and Low On-State Voltage
- Helps Equipment Meet GR-1089-CORE, IEC 61000-4-5, FCC Part 68, ITU-T K.20/K.21, and UL497B
- UL Listed Under Recognized Component Index, File Number E219635
- Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data
- Package: SMB
- Package Material: Molded Plastic. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Lead-Free Plating (Matte Tin Finish). Solderable per MIL-STD-202, Method 208
- Polarity: None; Bi-Directional Devices Have No Polarity Indicator
- Weight: 0.093 grams (Approximate) Ordering Information (Note 4) Orderable Part Number Package Packing Qty. Carrier TB0640M-13-F SMB 3000 Tape & Reel TB0720M-13-F SMB 3000 Tape & Reel TB0900M-13-F SMB 3000 Tape & Reel TB1100M-13-F SMB 3000 Tape & Reel TB1300M-13-F SMB 3000 Tape & Reel TB1500M-13-F SMB 3000 Tape & Reel TB1800M-13-F SMB 3000 Tape & Reel TB2300M-13-F SMB 3000 Tape & Reel TB2600M-13-F SMB 3000 Tape & Reel TB3100M-13-F SMB 3000 Tape & Reel TB3500M-13-F SMB 3000 Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Green Top View Bottom View xxxxx = Product Type Marking Code (See Electrical Characteristics Table on Page 3) = Manufacturer’s Code Marking YWW = Date Code Marking A Bar or Underline Around the Date Code or Product Type Marking Code Denotes Assembly Site if Marked. Y = Last Digit of Year (ex: 6 for 2026) WW = Week Code (01 to 53) YWW xxxxx SMB
TB0640M–TB3500M Document number: DS30361 Rev. 11 - 2 2 of 6 www.diodes.com August 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. TB0640M–TB3500M Maximum Ratings (@TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit Non-Repetitive Peak Impulse Current @10/1000µs IPP 50 A Non-Repetitive Peak On-State Current @8.3ms (One-Half Cycle) ITSM 30 A Typical Positive Temperature Coefficient for Breakdown Voltage VBR/TJ 0.1 %/°C Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance, Junction to Lead RJL 20 °C/W Thermal Resistance, Junction to Ambient RJA 100 °C/W Junction Temperature Range TJ -40 to 150 C Storage Temperature Range TSTG -55 to 150 C Maximum Rated Surge Waveform Current Waveform Voltage Waveform Standard IPP (A) 2/10µs 2/10µs GR-1089-CORE 300 8/20µs 1.2/50µs IEC 61000-4-5 250 10/160µs 10/160µs FCC Part 68 150 5/310µs 10/700µs ITU-T, K.20/K.21 100 10/560µs 10/560µs FCC Part 68 75 10/1000µs 10/1000µs GR-1089-CORE 50 I , PEAK PULSE CURRENT (%)PP Peak Value (I )pp Half Value t = rise time to peak value t = decay time to half value r p tr tp
TB0640M–TB3500M Document number: DS30361 Rev. 11 - 2 3 of 6 www.diodes.com August 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. TB0640M–TB3500M Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Part Number Maximum Off-State Leakage Current @ VDRM Maximum Breakover Voltage Maximum On-State Voltage @ IT = 1A Breakover Current IBO Holding Current IH Typical Off-State Capacitance Marking Code IDRM (µA) @ VDRM (V) VBO (V) VT (V) Min (mA) Max (mA) Min (mA) Max (mA) CO (pF) TB0640M 5 58 77 3.5 50 800 150 800 140 T064M TB0720M 5 65 88 3.5 50 800 150 800 140 T072M TB0900M 5 75 98 3.5 50 800 150 800 140 T090M TB1100M 5 90 130 3.5 50 800 150 800 90 T110M TB1300M 5 120 160 3.5 50 800 150 800 90 T130M TB1500M 5 140 180 3.5 50 800 150 800 90 T150M TB1800M 5 160 220 3.5 50 800 150 800 90 T180M TB2300M 5 190 265 3.5 50 800 150 800 60 T230M TB2600M 5 220 300 3.5 50 800 150 800 60 T260M TB3100M 5 275 350 3.5 50 800 150 800 60 T310M TB3500M 5 320 400 3.5 50 800 150 800 60 T350M Symbol Parameter VDRM Stand-Off Voltage IDRM Leakage Current at Stand-Off Voltage VBR Breakdown Voltage IBR Breakdown Current VBO Breakover Voltage IBO Breakover Current IH Holding Current (Note 5) VT On-State Voltage IPP Peak Pulse Current CO Off-State Capacitance (Note 6) Notes: 5. IH > (VL/RL). If this criterion is not met, the TSPD will be triggered but does not return correctly to high-resistance state. The surge recovery time does not exceed 30ms. 6. Off-state capacitance measured at f = 1.0MHz, 1.0VRMS signal, VR = 2VDC bias. IBO VBR VDRM VT VBO IH I V IBR IDRM IPP
TB0640M–TB3500M Document number: DS30361 Rev. 11 - 2 4 of 6 www.diodes.com August 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. TB0640M–TB3500M I , OFF-STATE CURRENT (uA)(DRM) T , JUNCTION TEMPERATURE (蚓) Fig. 1 Off-State Current vs. Junction Temperature J 0.001 0.01 0.1 100 -25 0 25 50 75 100 125 150 V = 50VDRM 0.9 T , JUNCTION TEMPERATURE (蚓) Fig. 2 Relative Variation of Breakdown Voltage vs. Junction Temperature J 0.95 1.05 1.1 1.15 1.2 -50 -25 0 25 50 75 100 125 150 175 NORMALIZED BREAKDOWN VOLTAGE 1.05 0.95 -50 NORMALIZED BREAKDOWN VOLTAGE 1.1 -25 0 755025 125100 175150 T , JUNCTION TEMPERATURE (慢) Fig. 3 Relative Variation of Breakover Voltage vs. Junction Temperature J 100 1 1.5 32.52 43.5 54.5 I , ON-STATE CURRENT (A)T V , ON-STATE VOLTAGE (V) Fig. 4 On-State Current vs. On-State Voltage T 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.4 1.3 1.2 -50 -25 0 25 50 10075 125 NORMALIZED HOLDING CURRENT T , JUNCTION TEMPERATURE ( 蚓)J Fig. 5 Relative Variation of Holding Current vs. Junction Temperature 0.1 1 10 100 NORMALIZED CAPACITANCE V , REVERSE VOLTAGE (V) Fig. 6 Relative Variation of Junction Capacitance vs. Reverse Voltage Bias R TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃) (µA)
TB0640M–TB3500M Document number: DS30361 Rev. 11 - 2 5 of 6 www.diodes.com August 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. TB0640M–TB3500M Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SMB D b A E L c SMB Dim Min Max A 2.00 2.50 A1 0.05 0.20 b 1.96 2.21 c 0.15 0.31 D 3.30 3.94 E 5.00 5.59 E1 4.06 4.57 L 0.76 1.52 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SMB Y X G C Dimensions Value (in mm) C 4.30 G 1.80 X 2.50 X1 6.80 Y 2.30
TB0640M–TB3500M Document number: DS30361 Rev. 11 - 2 6 of 6 www.diodes.com August 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. TB0640M–TB3500M IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KI ND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. 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