TB2S-G COMCHIP | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
-Glass passivated chip junction. -Plastic materrial has U/L flammability classification 94v-0. -Save space on printed circuit boards. -Pb free product. Mechanical data -Polarity: Symbol molded on body. -Case: Molded plastic body over passivated junction. TB2S-G Thru. TB10S-G Parameter Dimensions in inches and (millimeter) TBS QW-BBR53 Symbol Unit TB4S-G TB6S-G TB8S-G TB10S-G Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Output Current TL=100°C Peak Forward Surge Current, 8.3ms Single Half Sine-wave, Superimposed on Rated Load (JEDEC Method) Maximum Reverse Current @TA=25°C at Rated DC Blocking Voltage Operating Junction Temperature Range Storage Temperature Range Notes: 1. On glass epoxy P.C.B 2. On aluminum substrate VRRM VRMS VDC I (AV)F IFSM VF IR RθJL TJ TSTG 400 280 400 600 420 600 800 560 800 1000 700 1000 V V V 0.95 -55 to +150 -55 to +150 A A V μA °C/W 0.028 (0.70) 0.024 (0.60) 0.012 (0.30) 0.008 (0.20) 0.264 (6.70) Comchip Technology CO., LTD. TB2S-G 200 140 200 Marking TB4S TB6S TB8S TB10S TB2S 0.060 (1.45) 0.051 (1.15) 0.205 (5.20) 0.189 (4.80) 0.249 (6.30) 0.179 (4.55) 0.167 (4.25) 0.028 (0.70) 0.024 (0.60) 0.161 (4.10) 0.154 (3.90) 0.006 (0.15) 0.002 (0.05) -High temperature soldering guaranteed: -High surge overload rating :30A peak 260°C/10 seconds at 5 ibs. -Terminals: Plated leads solderable per MIL-STD-750, -Mounting position: Any. Method 2026. 1.02) 0.81) RθJA 62.5 Typical Thermal Junction to lead On aluminum substrate On glass-epoxy substrate Maximum Instantaneous Forward Voltage at 0.4A DC Maximum ratings and electrical characteristicsRating at 25°C ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20% Silicon Bridge Rectifiers
RATING AND CHARACTERISTIC CURVES (TB2S-G thru TB10S-G) Ambient temperature, (°C) 150125100755025 Fig.2 Forward Derating Curve - 0.25 0.5 0.75 1.0 Average Forward Rectified Current, (A) Resistive or Inductive Load Number of Cycles at 60Hz Fig.4 Peak Forward Surge Current - Peak Forward Surge Current, (A) 10 100 Pulse width 8.3mS, single half-sine wave (JEDEC Method) Percent of Rated Peak Reverse Voltage, (%) Fig.3 Typical Reverse Characteristics - 1.0 100 1000 10000 20 40 60 80 100 120 140 O TA=25 C O TA=100 C Instantaneous Forward Voltage, (V) 0.7 Fig.1 - Typical Forward Characteristics 0.01 Instantaneous Forward Current, (A) 0.1 1.0 Comchip Technology CO., LTD. QW-BBR53 Page 2 REV:A 0.4 Aluminum Substrate Glass P.C.B Epoxy 10000 Silicon Bridge Rectifiers Instantaneous Reverse Current, ( A)µ
Comchip Technology CO., LTD. QW-BBR53 SYMBOL (mm) E F P P0 P1 W W1 1.75 0.10± 0.069 0.004± 5.50 0.10± 0.217 0.004± TBS 0.30 ± 0.05 0.012 ± 0.002 T o 120 D1 D2 D Trailer Device Leader 10 pitches (min)10 pitches (min) Direction of Feed Reel Taping Specification T C Index hole d E F B W P A Silicon Bridge Rectifiers B C d D D2D1 TBS SYMBOL (mm) (inch) 2.953 ± 0.004 5.50 0.10± 0.217 0.004± 6.85 0.10± 0.270 0.004± 2.10 0.10± 0.083 0.004± A REV:A
Comchip Technology CO., LTD. Page 4 REV:A Standard Packaging QW-BBR53 A D 0.027MIN0.68MIN 4.0±0.1 0.62MIN 0.157±0.004 0.024MIN 6.70MAX 0.264MAX B C Suggested PAD Layout SIZE (inch)(mm) TBS A B C D Case Type TBS 1,500 REEL ( pcs ) Reel Size (inch) REEL PACK Silicon Bridge Rectifiers